SE9301704L - Lateral bipolar variable base width transistor and a method for controlling the base width - Google Patents

Lateral bipolar variable base width transistor and a method for controlling the base width

Info

Publication number
SE9301704L
SE9301704L SE9301704A SE9301704A SE9301704L SE 9301704 L SE9301704 L SE 9301704L SE 9301704 A SE9301704 A SE 9301704A SE 9301704 A SE9301704 A SE 9301704A SE 9301704 L SE9301704 L SE 9301704L
Authority
SE
Sweden
Prior art keywords
base
region
collector
transistor
base width
Prior art date
Application number
SE9301704A
Other languages
Unknown language ( )
Swedish (sv)
Other versions
SE9301704D0 (en
SE501218C2 (en
Inventor
Kjell Bohlin
Original Assignee
Asea Brown Boveri
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Brown Boveri filed Critical Asea Brown Boveri
Priority to SE9301704A priority Critical patent/SE501218C2/en
Publication of SE9301704D0 publication Critical patent/SE9301704D0/en
Priority to PCT/SE1994/000410 priority patent/WO1994027324A1/en
Publication of SE9301704L publication Critical patent/SE9301704L/en
Publication of SE501218C2 publication Critical patent/SE501218C2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H10D62/184—Base regions of bipolar transistors, e.g. BJTs or IGBTs of lateral BJTs

Landscapes

  • Bipolar Transistors (AREA)

Abstract

The present invention relates to a lateral bipolar transistor arranged in a semiconductor body (1) comprising an emitter region (3) provided with an emitter connection (E), a collector region (4) provided with a collector connection (C), and base region (2) provided with a base connection (B), said base region adjoining the collector region via a base-collector junction (11), and a gate electrode (9) provided with a gate connection (G) and being separated from the semiconductor body by an insulating layer (8). The gate electrode is arranged over that part of the base region which is located between the emitter region and the base-collector junction and over a portion of the collector region adjoining the base-collector junction. The transistor is adapted such that the threshold voltage is never exceeded, that is, no conducting channel can be formed between the emitter and collector regions. The base region of the transistor has a base width (WB), the magnitude of which can be controlled by a voltage signal which is applied to the gate connection (G). By reducing the base width, a higher amplification is achieved, which in turn leads to a higher cutoff frequency of the transistor.
SE9301704A 1993-05-18 1993-05-18 Lateral bipolar variable base width transistor and a method for controlling the base width SE501218C2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SE9301704A SE501218C2 (en) 1993-05-18 1993-05-18 Lateral bipolar variable base width transistor and a method for controlling the base width
PCT/SE1994/000410 WO1994027324A1 (en) 1993-05-18 1994-05-05 A lateral bipolar transistor with variable base width and a method for controlling the base width

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9301704A SE501218C2 (en) 1993-05-18 1993-05-18 Lateral bipolar variable base width transistor and a method for controlling the base width

Publications (3)

Publication Number Publication Date
SE9301704D0 SE9301704D0 (en) 1993-05-18
SE9301704L true SE9301704L (en) 1994-11-19
SE501218C2 SE501218C2 (en) 1994-12-12

Family

ID=20389979

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9301704A SE501218C2 (en) 1993-05-18 1993-05-18 Lateral bipolar variable base width transistor and a method for controlling the base width

Country Status (2)

Country Link
SE (1) SE501218C2 (en)
WO (1) WO1994027324A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5646055A (en) * 1996-05-01 1997-07-08 Motorola, Inc. Method for making bipolar transistor
RU2767597C1 (en) * 2021-05-21 2022-03-17 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Lateral bipolar transistor based on “silicon on insulator” structures and the method for its manufacture
EP4483416A1 (en) * 2022-02-25 2025-01-01 Analog Devices International Unlimited Company Low voltage active semiconductor device monolithically integrated with voltage divider device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4344081A (en) * 1980-04-14 1982-08-10 Supertex, Inc. Combined DMOS and a vertical bipolar transistor device and fabrication method therefor
US4965872A (en) * 1988-09-26 1990-10-23 Vasudev Prahalad K MOS-enhanced, self-aligned lateral bipolar transistor made of a semiconductor on an insulator
US4999518A (en) * 1989-12-08 1991-03-12 International Business Machines Corp. MOS switching circuit having gate enhanced lateral bipolar transistor
US5091321A (en) * 1991-07-22 1992-02-25 Allegro Microsystems, Inc. Method for making an NPN transistor with controlled base width compatible with making a Bi-MOS integrated circuit

Also Published As

Publication number Publication date
WO1994027324A1 (en) 1994-11-24
SE9301704D0 (en) 1993-05-18
SE501218C2 (en) 1994-12-12

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