SE9901410D0 - Abipolar transistor - Google Patents

Abipolar transistor

Info

Publication number
SE9901410D0
SE9901410D0 SE9901410A SE9901410A SE9901410D0 SE 9901410 D0 SE9901410 D0 SE 9901410D0 SE 9901410 A SE9901410 A SE 9901410A SE 9901410 A SE9901410 A SE 9901410A SE 9901410 D0 SE9901410 D0 SE 9901410D0
Authority
SE
Sweden
Prior art keywords
transistor
abipolar
layer
sic
semi
Prior art date
Application number
SE9901410A
Other languages
English (en)
Swedish (sv)
Inventor
Mietek Bakowski
Ulf Gusafsson
Lennart Zdansky
Bo Breitholtz
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Priority to SE9901410A priority Critical patent/SE9901410D0/xx
Publication of SE9901410D0 publication Critical patent/SE9901410D0/xx
Priority to US09/333,296 priority patent/US6313488B1/en
Priority to PCT/SE2000/000698 priority patent/WO2000065636A2/en
Priority to JP2000614486A priority patent/JP4959872B2/ja
Priority to DE60045708T priority patent/DE60045708D1/de
Priority to AT00928024T priority patent/ATE501526T1/de
Priority to EP00928024A priority patent/EP1186049B1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)
SE9901410A 1999-04-21 1999-04-21 Abipolar transistor SE9901410D0 (sv)

Priority Applications (7)

Application Number Priority Date Filing Date Title
SE9901410A SE9901410D0 (sv) 1999-04-21 1999-04-21 Abipolar transistor
US09/333,296 US6313488B1 (en) 1999-04-21 1999-06-15 Bipolar transistor having a low doped drift layer of crystalline SiC
PCT/SE2000/000698 WO2000065636A2 (en) 1999-04-21 2000-04-12 A bipolar transistor
JP2000614486A JP4959872B2 (ja) 1999-04-21 2000-04-12 バイポーラトランジスタ
DE60045708T DE60045708D1 (de) 1999-04-21 2000-04-12 Bipolarer transistor
AT00928024T ATE501526T1 (de) 1999-04-21 2000-04-12 Bipolarer transistor
EP00928024A EP1186049B1 (de) 1999-04-21 2000-04-12 Bipolarer transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9901410A SE9901410D0 (sv) 1999-04-21 1999-04-21 Abipolar transistor

Publications (1)

Publication Number Publication Date
SE9901410D0 true SE9901410D0 (sv) 1999-04-21

Family

ID=20415286

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9901410A SE9901410D0 (sv) 1999-04-21 1999-04-21 Abipolar transistor

Country Status (7)

Country Link
US (1) US6313488B1 (de)
EP (1) EP1186049B1 (de)
JP (1) JP4959872B2 (de)
AT (1) ATE501526T1 (de)
DE (1) DE60045708D1 (de)
SE (1) SE9901410D0 (de)
WO (1) WO2000065636A2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001332565A (ja) * 2000-05-25 2001-11-30 Nec Corp 負性微分抵抗素子およびその製造方法
US7132701B1 (en) * 2001-07-27 2006-11-07 Fairchild Semiconductor Corporation Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods
US6870204B2 (en) 2001-11-21 2005-03-22 Astralux, Inc. Heterojunction bipolar transistor containing at least one silicon carbide layer
JP2004200391A (ja) * 2002-12-18 2004-07-15 Hitachi Ltd 半導体装置
CN1698210A (zh) * 2003-01-06 2005-11-16 日本电信电话株式会社 P型氮化物半导体结构以及双极晶体管
JP2004247545A (ja) * 2003-02-14 2004-09-02 Nissan Motor Co Ltd 半導体装置及びその製造方法
JP4777699B2 (ja) 2005-06-13 2011-09-21 本田技研工業株式会社 バイポーラ型半導体装置およびその製造方法
US7868335B1 (en) * 2008-08-18 2011-01-11 Hrl Laboratories, Llc Modulation doped super-lattice sub-collector for high-performance HBTs and BJTs
JP6491201B2 (ja) 2013-06-24 2019-03-27 アイディール パワー インコーポレイテッド 双方向バイポーラトランジスタを有するシステム、回路、素子、及び方法
US9742385B2 (en) 2013-06-24 2017-08-22 Ideal Power, Inc. Bidirectional semiconductor switch with passive turnoff
US9799731B2 (en) 2013-06-24 2017-10-24 Ideal Power, Inc. Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors
US9236458B2 (en) * 2013-07-11 2016-01-12 Infineon Technologies Ag Bipolar transistor and a method for manufacturing a bipolar transistor
US11637016B2 (en) 2013-12-11 2023-04-25 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US9355853B2 (en) 2013-12-11 2016-05-31 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US9660551B2 (en) 2014-11-06 2017-05-23 Ideal Power, Inc. Operating point optimization with double-base-contact bidirectional bipolar junction transistor circuits, methods, and systems
CN105977287B (zh) * 2016-07-25 2018-11-09 电子科技大学 一种碳化硅双极结型晶体管
CN111081543A (zh) * 2019-12-26 2020-04-28 深圳第三代半导体研究院 一种基于二维材料/氮化镓的双极型三极管及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4945394A (en) * 1987-10-26 1990-07-31 North Carolina State University Bipolar junction transistor on silicon carbide
US5319220A (en) * 1988-01-20 1994-06-07 Sharp Kabushiki Kaisha Silicon carbide semiconductor device
US4985742A (en) * 1989-07-07 1991-01-15 University Of Colorado Foundation, Inc. High temperature semiconductor devices having at least one gallium nitride layer
EP0562549B1 (de) 1992-03-24 1998-07-01 Sumitomo Electric Industries, Ltd. Heteroübergang-Bipolartransistor mit Siliziumkarbid
JP3339508B2 (ja) * 1992-03-24 2002-10-28 住友電気工業株式会社 半導体装置
US5847414A (en) * 1995-10-30 1998-12-08 Abb Research Limited Semiconductor device having a hetero-junction between SiC and a Group 3B-nitride
US5641975A (en) 1995-11-09 1997-06-24 Northrop Grumman Corporation Aluminum gallium nitride based heterojunction bipolar transistor
US5910665A (en) * 1995-12-29 1999-06-08 Texas Instruments Incorporated Low capacitance power VFET method and device
SE9600199D0 (sv) * 1996-01-19 1996-01-19 Abb Research Ltd A semiconductor device with a low resistance ohmic contact between a metal layer and a SiC-layer
SE9601176D0 (sv) * 1996-03-27 1996-03-27 Abb Research Ltd A method for producing a semiconductor device having semiconductor layers of SiC by the use of an implanting step and a device produced thereby
US6011279A (en) * 1997-04-30 2000-01-04 Cree Research, Inc. Silicon carbide field controlled bipolar switch

Also Published As

Publication number Publication date
ATE501526T1 (de) 2011-03-15
WO2000065636A3 (en) 2001-01-25
EP1186049B1 (de) 2011-03-09
WO2000065636A2 (en) 2000-11-02
EP1186049A2 (de) 2002-03-13
WO2000065636A8 (en) 2001-07-12
JP4959872B2 (ja) 2012-06-27
DE60045708D1 (de) 2011-04-21
US6313488B1 (en) 2001-11-06
JP2002543585A (ja) 2002-12-17

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