SG111186A1 - Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas - Google Patents

Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas

Info

Publication number
SG111186A1
SG111186A1 SG200403685A SG200403685A SG111186A1 SG 111186 A1 SG111186 A1 SG 111186A1 SG 200403685 A SG200403685 A SG 200403685A SG 200403685 A SG200403685 A SG 200403685A SG 111186 A1 SG111186 A1 SG 111186A1
Authority
SG
Singapore
Prior art keywords
fluorotrioxides
fluoroperoxides
hypofluorites
oxidizing agent
fluorocarbon etch
Prior art date
Application number
SG200403685A
Other languages
English (en)
Inventor
Ji Bing
Andrew Motika Stephen
George Syvret Robert
R Badowski Peter
Joseph Karwacki Eugene Jr
Paul Withers Howard Jr
Martin Pearlstein Ronald
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of SG111186A1 publication Critical patent/SG111186A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
SG200403685A 2003-07-15 2004-06-30 Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas SG111186A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/619,922 US20050014383A1 (en) 2003-07-15 2003-07-15 Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas

Publications (1)

Publication Number Publication Date
SG111186A1 true SG111186A1 (en) 2005-05-30

Family

ID=33477084

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200403685A SG111186A1 (en) 2003-07-15 2004-06-30 Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas

Country Status (7)

Country Link
US (2) US20050014383A1 (fr)
EP (1) EP1498940A3 (fr)
JP (1) JP2005051236A (fr)
KR (1) KR100681281B1 (fr)
CN (1) CN1599038A (fr)
SG (1) SG111186A1 (fr)
TW (1) TWI284370B (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040219790A1 (en) * 2003-04-30 2004-11-04 Wilson Aaron R Etching methods, RIE methods, and methods of increasing the stability of photoresist during RIE
US7442650B2 (en) * 2007-01-10 2008-10-28 International Business Machines Corporation Methods of manufacturing semiconductor structures using RIE process
CN101925983A (zh) * 2007-12-21 2010-12-22 苏威氟有限公司 用于生产微机电系统的方法
DE102008037943B4 (de) * 2008-08-14 2018-04-26 Nawotec Gmbh Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen und Halbleiterbauelement mit einer Struktur geätzt mittels eines derartigen Verfahrens
DE102008037951B4 (de) * 2008-08-14 2018-02-15 Nawotec Gmbh Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen von mit Gallium verunreinigten Schichten
US8372756B2 (en) * 2008-08-29 2013-02-12 Air Products And Chemicals, Inc. Selective etching of silicon dioxide compositions
US8623148B2 (en) * 2009-09-10 2014-01-07 Matheson Tri-Gas, Inc. NF3 chamber clean additive
US20110061812A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
JP5655296B2 (ja) * 2009-12-01 2015-01-21 セントラル硝子株式会社 エッチングガス
JP2014036148A (ja) * 2012-08-09 2014-02-24 Tokyo Electron Ltd 多層膜をエッチングする方法、及びプラズマ処理装置
CN104885203B (zh) 2012-10-30 2017-08-01 乔治洛德方法研究和开发液化空气有限公司 用于高纵横比氧化物蚀刻的氟碳分子
JP2016051777A (ja) * 2014-08-29 2016-04-11 日本ゼオン株式会社 シリコン酸化膜のプラズマエッチング方法
US9607843B2 (en) * 2015-02-13 2017-03-28 Tokyo Electron Limited Method for roughness improvement and selectivity enhancement during arc layer etch via adjustment of carbon-fluorine content
JP2017050413A (ja) * 2015-09-02 2017-03-09 日本ゼオン株式会社 プラズマエッチング方法
US9496148B1 (en) * 2015-09-10 2016-11-15 International Business Machines Corporation Method of charge controlled patterning during reactive ion etching
WO2018159368A1 (fr) * 2017-02-28 2018-09-07 セントラル硝子株式会社 Agent et procédé de gravure sèche et procédé de fabrication d'un dispositif à semi-conducteur
US10276439B2 (en) 2017-06-02 2019-04-30 International Business Machines Corporation Rapid oxide etch for manufacturing through dielectric via structures
KR102388963B1 (ko) * 2020-05-07 2022-04-20 아주대학교산학협력단 퍼플루오로프로필카비놀(Perfluoropropyl carbinol)을 이용한 플라즈마 식각 방법
KR20230006007A (ko) * 2020-07-09 2023-01-10 쇼와 덴코 가부시키가이샤 에칭 방법 및 반도체 소자의 제조 방법
KR102582730B1 (ko) * 2021-04-07 2023-09-25 (주)후성 플루오르화 시클로프로판 가스의 제조방법 및 이를 포함하는 에칭용 가스 조성물
CN114409514B (zh) * 2021-12-21 2023-07-18 西安近代化学研究所 一种1,1,1,4,4,4-六氟-2-丁酮的合成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4473435A (en) * 1983-03-23 1984-09-25 Drytek Plasma etchant mixture
US5814563A (en) * 1996-04-29 1998-09-29 Applied Materials, Inc. Method for etching dielectric using fluorohydrocarbon gas, NH3 -generating gas, and carbon-oxygen gas
EP0871213A2 (fr) * 1997-03-27 1998-10-14 Siemens Aktiengesellschaft Procédé de fabrication de trous de contact ayant une section variable
WO1999021217A1 (fr) * 1997-10-22 1999-04-29 Interuniversitair Micro-Elektronica Centrum Attaque anisotropique de couches isolantes contenant des composes organiques

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3202718A (en) * 1960-06-20 1965-08-24 Du Pont Synthesis of bis (trifluoromethyl) peroxide
US3122463A (en) * 1961-03-07 1964-02-25 Bell Telephone Labor Inc Etching technique for fabricating semiconductor or ceramic devices
US3436424A (en) * 1966-09-20 1969-04-01 Allied Chem Process for preparing bis(trifluoromethyl)trioxide
US3467718A (en) * 1967-07-10 1969-09-16 Minnesota Mining & Mfg Fluorocarbon compounds
US3576837A (en) * 1968-08-22 1971-04-27 Allied Chem Process for preparatin of bisctrifloro-methyl trioxide and fluoroformyl trifluoromethyl peroxide
US3622601A (en) * 1969-02-17 1971-11-23 Monsanto Res Corp Fluorinated epoxide
US3634483A (en) * 1969-05-27 1972-01-11 Us Air Force Process for preparing compounds containing the oof group
US4213818A (en) * 1979-01-04 1980-07-22 Signetics Corporation Selective plasma vapor etching process
DD145348A1 (de) * 1979-08-06 1980-12-03 Wilfried Helmstreit Verfahren zum reaktiven ionenstrahlsaetzen von silizium und siliziumverbindungen
IT1249208B (it) * 1990-06-07 1995-02-20 Ausimont Srl Processo per la preparazione di 1,3-diossolani alogenati e nuovi prodotti ottenuti
JP3038950B2 (ja) * 1991-02-12 2000-05-08 ソニー株式会社 ドライエッチング方法
US5176790A (en) * 1991-09-25 1993-01-05 Applied Materials, Inc. Process for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting sputtering of underlying metal
US5445712A (en) * 1992-03-25 1995-08-29 Sony Corporation Dry etching method
JP3252518B2 (ja) * 1993-03-19 2002-02-04 ソニー株式会社 ドライエッチング方法
US5831131A (en) * 1995-08-30 1998-11-03 E. I. Du Pont De Nemours And Company Process for preparing peroxides
US5989929A (en) * 1997-07-22 1999-11-23 Matsushita Electronics Corporation Apparatus and method for manufacturing semiconductor device
TW428045B (en) * 1997-08-20 2001-04-01 Air Liquide Electronics Chemic Plasma cleaning and etching methods using non-global-warming compounds
JP3283477B2 (ja) 1997-10-27 2002-05-20 松下電器産業株式会社 ドライエッチング方法および半導体装置の製造方法
JP2903109B2 (ja) * 1997-12-01 1999-06-07 工業技術院長 モノ又はテトラフルオロエチルトリフルオロメチルエーテルの製造方法
SG72905A1 (en) * 1997-12-18 2000-05-23 Central Glass Co Ltd Gas for removing deposit and removal method using same
US6387287B1 (en) * 1998-03-27 2002-05-14 Applied Materials, Inc. Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window
US6174451B1 (en) * 1998-03-27 2001-01-16 Applied Materials, Inc. Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbons
JP3143650B2 (ja) * 1999-03-25 2001-03-07 工業技術院長 新規なフルオロオレフィンエーテル及びその製造方法
US6214670B1 (en) * 1999-07-22 2001-04-10 Taiwan Semiconductor Manufacturing Company Method for manufacturing short-channel, metal-gate CMOS devices with superior hot carrier performance
KR100338769B1 (ko) * 1999-10-26 2002-05-30 윤종용 반도체 장치의 절연막 식각방법
US6326307B1 (en) * 1999-11-15 2001-12-04 Appllied Materials, Inc. Plasma pretreatment of photoresist in an oxide etch process
US6432318B1 (en) * 2000-02-17 2002-08-13 Applied Materials, Inc. Dielectric etch process reducing striations and maintaining critical dimensions
US6451703B1 (en) * 2000-03-10 2002-09-17 Applied Materials, Inc. Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
US6362109B1 (en) * 2000-06-02 2002-03-26 Applied Materials, Inc. Oxide/nitride etching having high selectivity to photoresist
US6797639B2 (en) * 2000-11-01 2004-09-28 Applied Materials Inc. Dielectric etch chamber with expanded process window
US6403491B1 (en) * 2000-11-01 2002-06-11 Applied Materials, Inc. Etch method using a dielectric etch chamber with expanded process window
JP2002184765A (ja) * 2000-12-18 2002-06-28 Central Glass Co Ltd クリーニングガス
WO2002066408A2 (fr) * 2001-02-23 2002-08-29 Showa Denko K.K. Procede de production de perfluorocarbones et leur utilisation
JP2002280376A (ja) * 2001-03-22 2002-09-27 Research Institute Of Innovative Technology For The Earth Ｃｖｄ装置のクリーニング方法およびそのためのクリーニング装置
JP4205325B2 (ja) * 2001-09-12 2009-01-07 セントラル硝子株式会社 トリフルオロメチルハイポフルオライトの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4473435A (en) * 1983-03-23 1984-09-25 Drytek Plasma etchant mixture
US5814563A (en) * 1996-04-29 1998-09-29 Applied Materials, Inc. Method for etching dielectric using fluorohydrocarbon gas, NH3 -generating gas, and carbon-oxygen gas
EP0871213A2 (fr) * 1997-03-27 1998-10-14 Siemens Aktiengesellschaft Procédé de fabrication de trous de contact ayant une section variable
WO1999021217A1 (fr) * 1997-10-22 1999-04-29 Interuniversitair Micro-Elektronica Centrum Attaque anisotropique de couches isolantes contenant des composes organiques

Also Published As

Publication number Publication date
TWI284370B (en) 2007-07-21
EP1498940A3 (fr) 2005-08-24
JP2005051236A (ja) 2005-02-24
TW200502425A (en) 2005-01-16
KR100681281B1 (ko) 2007-02-12
CN1599038A (zh) 2005-03-23
US20050014383A1 (en) 2005-01-20
KR20050008489A (ko) 2005-01-21
US20070224829A1 (en) 2007-09-27
EP1498940A2 (fr) 2005-01-19

Similar Documents

Publication Publication Date Title
SG111186A1 (en) Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas
AU2003256520A1 (en) Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
AU2002306768A1 (en) Expression profiles and methods of use
AU2002346397A8 (en) Aqueous dispersions of fluoropolymers, method of reducing the fluorine surfactant concentration
AU2002335085A1 (en) Angiopoietins and methods of use thereof
AU2003274973A8 (en) Thermostable reverse transcriptases and uses thereof
AU2002314466A1 (en) Withasol and methods of use
AU2002242525A1 (en) Cathode compositions and use thereof, particularly in electrochemical generators
GB0218357D0 (en) Resist and etching by-product removing composition and resist removing method using the same
AU2003243424A1 (en) Deep-well, continuous-coiled-tubing apparatus and method of use
AU1334602A (en) Osteopontin-coated surfaces and methods of use
AU2001288972A1 (en) Antipsychotic sulfonamide-heterocycles, and methods of use thereof
EP1392280A4 (fr) Ethers arylsulfonamide et techniques d'utilisation de ces composes
AU2003274905A1 (en) Recombinant double-stranded rna phage, and use of the same
AU2003234682A1 (en) Destructible surfactants and uses thereof
AU2002361337A1 (en) Amphoteric polysaccharide, composition and use
NO20033425D0 (no) Surfaktant/oksidasjonsmiddellösning og fremgangsmåter for anvendelse av samme
AU2002363938A8 (en) Methods and use of motoneuronotropic factors
GB0203105D0 (en) Surfactants and surfactant compositions
AU2002310237A1 (en) Sponge-derived terpenoids and methods of use
AU2002346248A1 (en) Compositions including fluorinated peroxides, methods of making, and the use thereof
AU2003266142A8 (en) Mucus formulation for mucosal surfaces and uses thereof
AU2003234681A8 (en) Destructible surfactants and uses thereof
AU2003274943A1 (en) Use of estetrol and analogues for treating or preventing cardiovascular pathologies, in particular atherosclerosis
EP1599184A4 (fr) Preparations de perfluorocarbure et d'hydrofluorocarbure et procedes de fabrication et d'utilisation de celles-ci