SG123492G - Method for fabricating a field-effect transistor with a self-aligned gate - Google Patents

Method for fabricating a field-effect transistor with a self-aligned gate

Info

Publication number
SG123492G
SG123492G SG1234/92A SG123492A SG123492G SG 123492 G SG123492 G SG 123492G SG 1234/92 A SG1234/92 A SG 1234/92A SG 123492 A SG123492 A SG 123492A SG 123492 G SG123492 G SG 123492G
Authority
SG
Singapore
Prior art keywords
fabricating
self
field
effect transistor
aligned gate
Prior art date
Application number
SG1234/92A
Other languages
English (en)
Original Assignee
American Telephone & Telegraph
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone & Telegraph filed Critical American Telephone & Telegraph
Publication of SG123492G publication Critical patent/SG123492G/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/142—Semiconductor-metal-semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
SG1234/92A 1986-12-19 1992-12-09 Method for fabricating a field-effect transistor with a self-aligned gate SG123492G (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/944,457 US4784967A (en) 1986-12-19 1986-12-19 Method for fabricating a field-effect transistor with a self-aligned gate

Publications (1)

Publication Number Publication Date
SG123492G true SG123492G (en) 1993-02-19

Family

ID=25481431

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1234/92A SG123492G (en) 1986-12-19 1992-12-09 Method for fabricating a field-effect transistor with a self-aligned gate

Country Status (8)

Country Link
US (1) US4784967A (fr)
EP (1) EP0274866B1 (fr)
JP (1) JPS63164477A (fr)
CA (1) CA1271850A (fr)
DE (1) DE3778861D1 (fr)
ES (1) ES2030742T3 (fr)
HK (1) HK108693A (fr)
SG (1) SG123492G (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920009718B1 (ko) * 1987-08-10 1992-10-22 스미도모덴기고오교오 가부시기가이샤 화합물반도체장치 및 그 제조방법
US5013685A (en) * 1989-11-02 1991-05-07 At&T Bell Laboratories Method of making a non-alloyed ohmic contact to III-V semiconductors-on-silicon
US6043143A (en) * 1998-05-04 2000-03-28 Motorola, Inc. Ohmic contact and method of manufacture
US6258616B1 (en) * 1998-05-22 2001-07-10 Lucent Technologies Inc. Method of making a semiconductor device having a non-alloyed ohmic contact to a buried doped layer
TW407309B (en) * 1999-01-29 2000-10-01 Nat Science Council MOSFET manufacturing process
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL167277C (nl) * 1970-08-29 1981-11-16 Philips Nv Halfgeleiderinrichting met een plaatvorming half- geleiderlichaam met over althans een deel van de dikte van het halfgeleiderlichaam afgeschuinde randen, dat is voorzien van een metalen elektrode die een gelijkrichtende overgang vormt met het halfgeleider- lichaam en werkwijze ter vervaardiging van de halfgeleiderinrichting.
US3993515A (en) * 1975-03-31 1976-11-23 Rca Corporation Method of forming raised electrical contacts on a semiconductor device
JPS5850428B2 (ja) * 1975-04-16 1983-11-10 株式会社東芝 メサ型半導体装置
US4029542A (en) * 1975-09-19 1977-06-14 Rca Corporation Method for sloping the sidewalls of multilayer P+ PN+ junction mesa structures
JPS52128078A (en) * 1976-04-21 1977-10-27 Mitsubishi Electric Corp Manufacture of field effect transistor
US4029562A (en) * 1976-04-29 1977-06-14 Ibm Corporation Forming feedthrough connections for multi-level interconnections metallurgy systems
JPS5412573A (en) * 1977-06-29 1979-01-30 Matsushita Electric Ind Co Ltd Junction type field effect transistor and production of the same
US4197551A (en) * 1977-09-14 1980-04-08 Raytheon Company Semiconductor device having improved Schottky-barrier junction
GB1602498A (en) * 1978-05-31 1981-11-11 Secr Defence Fet devices and their fabrication
GB1601059A (en) * 1978-05-31 1981-10-21 Secr Defence Fet devices and their fabrication
US4325181A (en) * 1980-12-17 1982-04-20 The United States Of America As Represented By The Secretary Of The Navy Simplified fabrication method for high-performance FET
FR2496982A1 (fr) * 1980-12-24 1982-06-25 Labo Electronique Physique Procede de fabrication de transistors a effet de champ, a grille auto-alignee, et transistors ainsi obtenus
JPS6089979A (ja) * 1983-10-24 1985-05-20 Fujitsu Ltd 半導体装置
FR2558647B1 (fr) * 1984-01-23 1986-05-09 Labo Electronique Physique Transistor a effet de champ de type schottky pour applications hyperfrequences et procede de realisation permettant d'obtenir un tel transistor
GB8413170D0 (en) * 1984-05-23 1984-06-27 British Telecomm Production of semiconductor devices
US4780748A (en) * 1986-06-06 1988-10-25 American Telephone & Telegraph Company, At&T Bell Laboratories Field-effect transistor having a delta-doped ohmic contact

Also Published As

Publication number Publication date
DE3778861D1 (de) 1992-06-11
CA1271850A (fr) 1990-07-17
EP0274866B1 (fr) 1992-05-06
ES2030742T3 (es) 1992-11-16
EP0274866A1 (fr) 1988-07-20
US4784967A (en) 1988-11-15
JPS63164477A (ja) 1988-07-07
HK108693A (en) 1993-10-22

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