SG12592G - Method of producing non-linear control elements for an electro-optical,flat image screen,and flat screen produced by this method - Google Patents
Method of producing non-linear control elements for an electro-optical,flat image screen,and flat screen produced by this methodInfo
- Publication number
- SG12592G SG12592G SG125/92A SG12592A SG12592G SG 12592 G SG12592 G SG 12592G SG 125/92 A SG125/92 A SG 125/92A SG 12592 A SG12592 A SG 12592A SG 12592 G SG12592 G SG 12592G
- Authority
- SG
- Singapore
- Prior art keywords
- flat
- electro
- screen
- optical
- control elements
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1365—Active matrix addressed cells in which the switching element is a two-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8505007A FR2579775B1 (fr) | 1985-04-02 | 1985-04-02 | Procede de realisation d'elements de commande non lineaire pour ecran plat de visualisation electro-optique et ecran plat realise selon ce procede |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG12592G true SG12592G (en) | 1992-04-16 |
Family
ID=9317864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG125/92A SG12592G (en) | 1985-04-02 | 1992-02-11 | Method of producing non-linear control elements for an electro-optical,flat image screen,and flat screen produced by this method |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4732873A (de) |
| EP (1) | EP0200599B1 (de) |
| JP (1) | JPS61230186A (de) |
| DE (1) | DE3673858D1 (de) |
| FR (1) | FR2579775B1 (de) |
| HK (1) | HK38992A (de) |
| SG (1) | SG12592G (de) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5123847A (en) * | 1983-05-11 | 1992-06-23 | Holmberg Scott H | Method of manufacturing flat panel backplanes, display transistors |
| JPH0616506B2 (ja) * | 1984-12-26 | 1994-03-02 | 株式会社半導体エネルギー研究所 | 積層体の側周辺に選択的に被膜を形成する方法 |
| US4855806A (en) * | 1985-08-02 | 1989-08-08 | General Electric Company | Thin film transistor with aluminum contacts and nonaluminum metallization |
| US5327001A (en) * | 1987-09-09 | 1994-07-05 | Casio Computer Co., Ltd. | Thin film transistor array having single light shield layer over transistors and gate and drain lines |
| US5166085A (en) * | 1987-09-09 | 1992-11-24 | Casio Computer Co., Ltd. | Method of manufacturing a thin film transistor |
| US5229644A (en) * | 1987-09-09 | 1993-07-20 | Casio Computer Co., Ltd. | Thin film transistor having a transparent electrode and substrate |
| FR2621728B1 (fr) * | 1987-10-09 | 1990-01-05 | Thomson Csf | Systeme de visualisation d'images en demi-teintes sur un ecran matriciel |
| NL8702490A (nl) * | 1987-10-19 | 1989-05-16 | Philips Nv | Weergeefinrichting met laterale schottky-dioden. |
| US5225706A (en) * | 1987-12-04 | 1993-07-06 | Thomson-Csf | Matrix of photosensitive elements associating a photodiode or a phototransistor and a storage capacitor |
| JP2739582B2 (ja) * | 1988-03-17 | 1998-04-15 | セイコーインスツルメンツ株式会社 | 電気光学装置の製造方法 |
| JPH0228372A (ja) * | 1988-04-20 | 1990-01-30 | Konica Corp | イメージセンサ |
| US4954864A (en) * | 1988-12-13 | 1990-09-04 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Millimeter-wave monolithic diode-grid frequency multiplier |
| JPH02266326A (ja) * | 1989-04-07 | 1990-10-31 | Citizen Watch Co Ltd | 2端子型アクティブマトリクス液晶表示素子 |
| US5139606A (en) * | 1989-12-05 | 1992-08-18 | Massachusetts Institute Of Technology | Laser bilayer etching of GaAs surfaces |
| US5109256A (en) * | 1990-08-17 | 1992-04-28 | National Semiconductor Corporation | Schottky barrier diodes and Schottky barrier diode-clamped transistors and method of fabrication |
| US5225359A (en) * | 1990-08-17 | 1993-07-06 | National Semiconductor Corporation | Method of fabricating Schottky barrier diodes and Schottky barrier diode-clamped transistors |
| FR2682798B1 (fr) * | 1991-10-22 | 1994-01-21 | Sextant Avionique | Procede et dispositif d'optimisation des performances d'un ecran matriciel a cristaux liquides en fonction de l'angle d'observation. |
| US5278444A (en) * | 1992-02-26 | 1994-01-11 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Planar varactor frequency multiplier devices with blocking barrier |
| FR2696258B1 (fr) * | 1992-09-25 | 1994-10-28 | Sextant Avionique | Dispositif de gestion d'un système d'interaction homme-machine. |
| US5739065A (en) * | 1995-10-13 | 1998-04-14 | United Microelectronics Corp. | Method of fabricating a highly sensitive photo sensor |
| US6180444B1 (en) * | 1998-02-18 | 2001-01-30 | International Business Machines Corporation | Semiconductor device having ultra-sharp P-N junction and method of manufacturing the same |
| TW200849395A (en) * | 2007-06-01 | 2008-12-16 | Univ Chang Gung | Thin-film ZnO varistor and manufacturing method and application thereof |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4163677A (en) * | 1978-04-28 | 1979-08-07 | Rca Corporation | Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier |
| US4281208A (en) * | 1979-02-09 | 1981-07-28 | Sanyo Electric Co., Ltd. | Photovoltaic device and method of manufacturing thereof |
| US4223308A (en) * | 1979-07-25 | 1980-09-16 | Northern Telecom Limited | LCDs (Liquid crystal displays) controlled by thin film diode switches |
| US4242156A (en) * | 1979-10-15 | 1980-12-30 | Rockwell International Corporation | Method of fabricating an SOS island edge passivation structure |
| US4368085A (en) * | 1979-10-15 | 1983-01-11 | Rockwell International Corporation | SOS island edge passivation structure |
| FR2505070B1 (fr) * | 1981-01-16 | 1986-04-04 | Suwa Seikosha Kk | Dispositif non lineaire pour un panneau d'affichage a cristaux liquides et procede de fabrication d'un tel panneau d'affichage |
| NL8103376A (nl) * | 1981-07-16 | 1983-02-16 | Philips Nv | Weergeefinrichting. |
| FR2512240A1 (fr) * | 1981-08-25 | 1983-03-04 | Thomson Csf | Dispositif de visualisation a commande electrique utilisant un element non lineaire en couche epaisse et son procede de fabrication |
| FR2518788A1 (fr) * | 1981-12-23 | 1983-06-24 | Thomson Csf | Dispositif a resistance dependant de la tension, son procede de fabrication et sa mise en oeuvre dans un ecran de visualisation a commande electrique |
| JPS58170067A (ja) * | 1982-03-31 | 1983-10-06 | Fujitsu Ltd | 薄膜トランジスタの製造方法 |
| US4409424A (en) * | 1982-06-21 | 1983-10-11 | Genevieve Devaud | Compensated amorphous silicon solar cell |
| DE3424085A1 (de) * | 1983-06-29 | 1985-01-17 | Citizen Watch Co., Ltd., Tokio/Tokyo | Verfahren zur herstellung von hoechstminiaturisierten duennschichtdioden |
| FR2551902B1 (fr) * | 1983-09-13 | 1986-01-24 | Thomson Csf | Ecran de visualisation a adressage par elements non lineaires et son procede de fabrication |
| FR2579809B1 (fr) * | 1985-04-02 | 1987-05-15 | Thomson Csf | Procede de realisation de matrices decommande a diodes pour ecran plat de visualisation electro-optique et ecran plat realise par ce procede |
-
1985
- 1985-04-02 FR FR8505007A patent/FR2579775B1/fr not_active Expired
-
1986
- 1986-03-27 DE DE8686400665T patent/DE3673858D1/de not_active Expired - Fee Related
- 1986-03-27 EP EP86400665A patent/EP0200599B1/de not_active Expired - Lifetime
- 1986-03-31 US US06/846,276 patent/US4732873A/en not_active Expired - Fee Related
- 1986-04-01 JP JP61075401A patent/JPS61230186A/ja active Pending
-
1992
- 1992-02-11 SG SG125/92A patent/SG12592G/en unknown
- 1992-05-28 HK HK389/92A patent/HK38992A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61230186A (ja) | 1986-10-14 |
| US4732873A (en) | 1988-03-22 |
| EP0200599A1 (de) | 1986-11-05 |
| FR2579775A1 (fr) | 1986-10-03 |
| FR2579775B1 (fr) | 1987-05-15 |
| EP0200599B1 (de) | 1990-09-05 |
| DE3673858D1 (de) | 1990-10-11 |
| HK38992A (en) | 1992-06-04 |
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