SG164385A1 - Composition useful for removal of post-etch photoresist and bottom anti- reflection coatings - Google Patents

Composition useful for removal of post-etch photoresist and bottom anti- reflection coatings

Info

Publication number
SG164385A1
SG164385A1 SG201005348-6A SG2010053486A SG164385A1 SG 164385 A1 SG164385 A1 SG 164385A1 SG 2010053486 A SG2010053486 A SG 2010053486A SG 164385 A1 SG164385 A1 SG 164385A1
Authority
SG
Singapore
Prior art keywords
bottom anti
removal
post
composition useful
reflection coatings
Prior art date
Application number
SG201005348-6A
Other languages
English (en)
Inventor
David W Minsek
Weihua Wang
David D Bernhard
Thomas H Baum
Melissa K Rath
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Publication of SG164385A1 publication Critical patent/SG164385A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG201005348-6A 2005-01-07 2006-01-09 Composition useful for removal of post-etch photoresist and bottom anti- reflection coatings SG164385A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/031,118 US20060154186A1 (en) 2005-01-07 2005-01-07 Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings

Publications (1)

Publication Number Publication Date
SG164385A1 true SG164385A1 (en) 2010-09-29

Family

ID=36647826

Family Applications (1)

Application Number Title Priority Date Filing Date
SG201005348-6A SG164385A1 (en) 2005-01-07 2006-01-09 Composition useful for removal of post-etch photoresist and bottom anti- reflection coatings

Country Status (9)

Country Link
US (2) US20060154186A1 (fr)
EP (2) EP1844367A4 (fr)
JP (1) JP2008527447A (fr)
KR (1) KR101365784B1 (fr)
CN (2) CN101137939B (fr)
IL (1) IL184483A0 (fr)
SG (1) SG164385A1 (fr)
TW (1) TWI426361B (fr)
WO (1) WO2006074316A1 (fr)

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EP1932174A4 (fr) 2005-10-05 2009-09-23 Advanced Tech Materials Nettoyant aqueux oxydant servant a supprimer des residus apres une attaque au plasma
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KR102102792B1 (ko) 2011-12-28 2020-05-29 엔테그리스, 아이엔씨. 티타늄 나이트라이드의 선택적인 에칭을 위한 조성물 및 방법
SG11201404930SA (en) 2012-02-15 2014-09-26 Advanced Tech Materials Post-cmp removal using compositions and method of use
JP2015517691A (ja) 2012-05-18 2015-06-22 インテグリス，インコーポレイテッド 窒化チタンを含む表面からフォトレジストを剥離するための組成物およびプロセス
KR102118964B1 (ko) 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
US10472567B2 (en) 2013-03-04 2019-11-12 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
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WO2015095175A1 (fr) 2013-12-16 2015-06-25 Advanced Technology Materials, Inc. Compositions de gravure sélectives de type ni:nige:ge et leur procédé d'utilisation
TWI662379B (zh) 2013-12-20 2019-06-11 Entegris, Inc. 移除離子植入抗蝕劑之非氧化強酸類之用途
WO2015103146A1 (fr) 2013-12-31 2015-07-09 Advanced Technology Materials, Inc. Formulations de gravure sélective de silicium et de germanium
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TWI690780B (zh) * 2014-12-30 2020-04-11 美商富士軟片電子材料美國股份有限公司 用於自半導體基板去除光阻之剝離組成物
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JP6813596B2 (ja) * 2016-05-23 2021-01-13 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 半導体基板からフォトレジストを除去するための剥離組成物
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Also Published As

Publication number Publication date
CN101137939A (zh) 2008-03-05
IL184483A0 (en) 2007-10-31
WO2006074316A1 (fr) 2006-07-13
KR101365784B1 (ko) 2014-02-20
CN101137939B (zh) 2014-09-03
CN104199261B (zh) 2019-07-09
EP1844367A1 (fr) 2007-10-17
JP2008527447A (ja) 2008-07-24
US7994108B2 (en) 2011-08-09
US20090215659A1 (en) 2009-08-27
TW200629012A (en) 2006-08-16
KR20070099012A (ko) 2007-10-08
TWI426361B (zh) 2014-02-11
EP1844367A4 (fr) 2011-08-31
US20060154186A1 (en) 2006-07-13
CN104199261A (zh) 2014-12-10
EP2482134A3 (fr) 2012-11-07
EP2482134A2 (fr) 2012-08-01

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