BRPI0418529A - composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos - Google Patents

composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos

Info

Publication number
BRPI0418529A
BRPI0418529A BRPI0418529-3A BRPI0418529A BRPI0418529A BR PI0418529 A BRPI0418529 A BR PI0418529A BR PI0418529 A BRPI0418529 A BR PI0418529A BR PI0418529 A BRPI0418529 A BR PI0418529A
Authority
BR
Brazil
Prior art keywords
cleaning compositions
microelectronic
derivatives
salts
halogen acids
Prior art date
Application number
BRPI0418529-3A
Other languages
English (en)
Inventor
Chien-Pin Shermann Hsu
Original Assignee
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker Inc filed Critical Mallinckrodt Baker Inc
Publication of BRPI0418529A publication Critical patent/BRPI0418529A/pt

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

OMPOSIçõES DE LIMPEZA PARA MICROELETRÈNICOS CONTENDO áCIDOS DE HALOGêNIO OXIGENADOS, SAIS E DERIVADOS DOS MESMOS. A presente invenção refere-se a composições de limpeza de microeletrónicos para a limpeza de sbstratos microeletrónicos e especificamente compostos de limpeza úteis com, e tendo uma compatibilidade aumentada com substratos microeletrónicos caraterizados por dióxido de silício,dielétricos sensiveis de baixo-k e de alto-k e metalizações de cobre, tungstênio, tântalo, níquel, ouro, cobalto, paládio, platina, cromo, rutênio, rádio, háfnio, titânio, molibdênio, estanho e outras metalizações,bem como metelizações de substratos de AI ou AI(cu) e tecnologias interconectadas avançadas, são prividas por composições de limpeza de microeletrónicos compreendendo ácidos de halogênio, sais e derivados dos mesmos.
BRPI0418529-3A 2004-02-11 2004-11-05 composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos BRPI0418529A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54380104P 2004-02-11 2004-02-11
PCT/US2004/037135 WO2005083523A1 (en) 2004-02-11 2004-11-05 Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof

Publications (1)

Publication Number Publication Date
BRPI0418529A true BRPI0418529A (pt) 2007-05-15

Family

ID=34700209

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0418529-3A BRPI0418529A (pt) 2004-02-11 2004-11-05 composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos

Country Status (19)

Country Link
US (1) US7521406B2 (pt)
EP (1) EP1564595B1 (pt)
JP (3) JP4208826B2 (pt)
KR (2) KR101316993B1 (pt)
CN (3) CN101833251B (pt)
AT (1) ATE449362T1 (pt)
BR (1) BRPI0418529A (pt)
CA (1) CA2555665C (pt)
DE (1) DE602005017684D1 (pt)
DK (1) DK1564595T3 (pt)
ES (1) ES2334359T3 (pt)
IL (1) IL177305A (pt)
NO (1) NO20064056L (pt)
PL (1) PL1564595T3 (pt)
PT (1) PT1564595E (pt)
SG (1) SG150508A1 (pt)
TW (1) TWI318238B (pt)
WO (1) WO2005083523A1 (pt)
ZA (1) ZA200606544B (pt)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PT1664935E (pt) * 2003-08-19 2008-01-10 Mallinckrodt Baker Inc Composições de decapagem e limpeza para micro electrónica
KR101117939B1 (ko) * 2003-10-28 2012-02-29 사켐,인코포레이티드 세척액 및 에칭제 및 이의 사용 방법
BRPI0418529A (pt) 2004-02-11 2007-05-15 Mallinckrodt Baker Inc composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos
US8338087B2 (en) * 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
US20060154186A1 (en) * 2005-01-07 2006-07-13 Advanced Technology Materials, Inc. Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
US7867779B2 (en) 2005-02-03 2011-01-11 Air Products And Chemicals, Inc. System and method comprising same for measurement and/or analysis of particles in gas stream
WO2006110279A1 (en) * 2005-04-08 2006-10-19 Sachem, Inc. Selective wet etching of metal nitrides
US8772214B2 (en) * 2005-10-14 2014-07-08 Air Products And Chemicals, Inc. Aqueous cleaning composition for removing residues and method using same
US7977228B2 (en) * 2006-06-29 2011-07-12 Intel Corporation Methods for the formation of interconnects separated by air gaps
SG175559A1 (en) * 2006-09-25 2011-11-28 Advanced Tech Materials Compositions and methods for the removal of photoresist for a wafer rework application
WO2008090418A1 (en) * 2007-01-22 2008-07-31 Freescale Semiconductor, Inc. Liquid cleaning composition and method for cleaning semiconductor devices
US20090241988A1 (en) * 2008-03-31 2009-10-01 Intel Corporation Photoresist and antireflective layer removal solution and method thereof
JP2011520142A (ja) * 2008-05-01 2011-07-14 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 高密度注入レジストの除去のための低ｐＨ混合物
BRPI1008034A2 (pt) * 2009-02-25 2016-03-15 Avantor Performance Mat Inc composições removedoras para limpeza de fotorresistor implantado por íons de discos de silício de dispositivos semicondutores
KR101831452B1 (ko) * 2009-02-25 2018-02-22 아반토 퍼포먼스 머티리얼즈, 엘엘씨 다목적 산성, 유기 용매 기반의 마이크로전자 세정 조성물
CN102460662B (zh) * 2009-06-25 2014-09-10 朗姆研究公司 用于处理半导体晶片的方法
US20120100721A1 (en) * 2009-06-25 2012-04-26 Lam Research Ag Method for treating a semiconductor wafer
US7994062B2 (en) * 2009-10-30 2011-08-09 Sachem, Inc. Selective silicon etch process
JP2011179085A (ja) * 2010-03-02 2011-09-15 C Uyemura & Co Ltd 電気めっき用前処理剤、電気めっきの前処理方法及び電気めっき方法
US20110253171A1 (en) * 2010-04-15 2011-10-20 John Moore Chemical Composition and Methods for Removing Epoxy-Based Photoimageable Coatings Utilized In Microelectronic Fabrication
CN103154321B (zh) 2010-10-06 2015-11-25 安格斯公司 选择性蚀刻金属氮化物的组合物及方法
CN102199499B (zh) * 2011-04-02 2013-01-16 浙江向日葵光能科技股份有限公司 太阳能电池硅片清洗剂及其使用方法
ES2541222T3 (es) * 2011-08-09 2015-07-16 Basf Se Composiciones alcalinas acuosas y procedimiento de tratamiento de la superficie de sustratos de silicio
US9257270B2 (en) * 2011-08-15 2016-02-09 Ekc Technology Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material
JP2015517691A (ja) * 2012-05-18 2015-06-22 インテグリス，インコーポレイテッド 窒化チタンを含む表面からフォトレジストを剥離するための組成物およびプロセス
JP6157081B2 (ja) * 2012-09-24 2017-07-05 東京応化工業株式会社 フォトリソグラフィ用剥離液、及びパターン形成方法
JP6029419B2 (ja) * 2012-11-02 2016-11-24 ダイキン工業株式会社 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
CN103809394B (zh) * 2012-11-12 2019-12-31 安集微电子科技（上海）股份有限公司 一种去除光阻蚀刻残留物的清洗液
KR102118964B1 (ko) * 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
CN103275823A (zh) * 2013-05-29 2013-09-04 苏州康和顺医疗技术有限公司 一种用于全自动生化分析仪的清洗剂及其制备方法
KR102338550B1 (ko) * 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
SG11201601158VA (en) 2013-08-30 2016-03-30 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
US9957469B2 (en) 2014-07-14 2018-05-01 Versum Materials Us, Llc Copper corrosion inhibition system
EP3193359B1 (en) * 2014-11-13 2019-12-18 Mitsubishi Gas Chemical Company, Inc. Semiconductor element cleaning method that suppresses damage to tantalum-containing materials
JP6217659B2 (ja) * 2015-01-28 2017-10-25 ダイキン工業株式会社 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
CN109642159B (zh) * 2016-03-24 2022-02-15 安万托特性材料有限公司 非水性钨相容性金属氮化物选择性蚀刻剂和清洁剂
CN107357143B (zh) 2017-07-25 2018-06-19 上海新阳半导体材料股份有限公司 一种清洗剂、其制备方法和应用
US11353794B2 (en) * 2017-12-22 2022-06-07 Versum Materials Us, Llc Photoresist stripper
CN109980174A (zh) * 2017-12-27 2019-07-05 中国电子科技集团公司第十八研究所 提高电池热熔性聚合物铜箔表面附着力方法及表面处理剂
CN111684570B (zh) * 2018-01-16 2024-02-27 株式会社德山 含有次氯酸根离子的半导体晶圆的处理液
AU2019269753A1 (en) * 2018-04-12 2020-11-12 Briotech, Inc. Aqueous hypohalous acid preparations for the inactivation of resistant infectious agents
US11572533B2 (en) * 2018-05-23 2023-02-07 Tokuyama Corporation Quaternary alkylammonium hypochlorite solution, method for manufacturing same, and method for cleaning semiconductor wafer
JP6901998B2 (ja) * 2018-06-15 2021-07-14 株式会社トクヤマ ４級アルキルアンモニウムイオン、亜塩素酸イオン、及び次亜塩素酸イオンを含む酸化性組成物
WO2020049955A1 (ja) * 2018-09-06 2020-03-12 富士フイルム株式会社 薬液、基板の処理方法
JP7219061B2 (ja) 2018-11-14 2023-02-07 関東化学株式会社 ルテニウム除去用組成物
US20220010206A1 (en) * 2019-02-13 2022-01-13 Tokuyama Corporation Semiconductor wafer treatment liquid containing hypochlorite ions and ph buffer
US12441964B2 (en) * 2019-02-15 2025-10-14 Nissan Chemical Corporation Cleaning agent composition and cleaning method
KR102769981B1 (ko) 2019-11-22 2025-02-18 가부시끼가이샤 도꾸야마 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법
KR102582791B1 (ko) * 2020-02-25 2023-09-25 가부시끼가이샤 도꾸야마 루테늄의 반도체용 처리액
TWI901664B (zh) * 2020-03-31 2025-10-21 日商德山股份有限公司 半導體用處理液及其製造方法
JP7031073B1 (ja) * 2020-04-17 2022-03-07 株式会社トクヤマ ハロゲン酸素酸溶液の製造方法
JP7797124B2 (ja) 2020-06-25 2026-01-13 株式会社トクヤマ ハロゲン酸素酸溶液の製造方法及び製造装置
WO2022024636A1 (ja) * 2020-07-31 2022-02-03 富士フイルム株式会社 薬液、薬液収容体、基板の処理方法
US12444617B2 (en) 2020-08-07 2025-10-14 Tokuyama Corporation Semiconductor wafer processing liquid containing hypobromite ions and PH buffering agent
JP7819114B2 (ja) * 2020-11-26 2026-02-24 株式会社トクヤマ 半導体ウェハの処理液及びその製造方法
WO2022138561A1 (ja) * 2020-12-25 2022-06-30 株式会社トクヤマ 遷移金属を含む半導体の処理方法、遷移金属を含む半導体の製造方法、および半導体用処理液
WO2022159183A1 (en) * 2021-01-19 2022-07-28 Lam Research Corporation Method of cleaning chamber components with metal etch residues
JP2022123278A (ja) * 2021-02-12 2022-08-24 株式会社トクヤマ ハロゲン酸素酸イオンの定量方法
KR102933956B1 (ko) 2021-05-03 2026-03-04 삼성전자주식회사 포토레지스트 박리 조성물과 이를 이용하는 반도체 소자 및 반도체 패키지의 제조 방법
CN115916741B (zh) * 2021-06-07 2025-08-08 株式会社德山 卤素含氧酸的制造方法及其制造装置
US12601975B2 (en) * 2021-06-17 2026-04-14 Taiwan Semiconductor Manufacturing Co., Ltd. Compositions for reducing resist consumption of extreme ultraviolet metallic type resist

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2256958A (en) * 1939-05-13 1941-09-23 Pittsburgh Plate Glass Co Quaternary ammonium hypohalites and method of making same
GB1080767A (en) * 1965-05-25 1967-08-23 Ici Ltd Tarnish inhibiting compositions
US3962108A (en) * 1975-11-03 1976-06-08 Kti Chemical, Inc. Chemical stripping solution
DE3308850C2 (de) * 1983-03-12 1985-03-07 B. Braun Melsungen Ag, 3508 Melsungen Bleich-, Reinigungs- und Desinfektionsmittel auf Hypohalitbasis mit verbesserter Lagerstabilität
US4642221A (en) * 1983-07-05 1987-02-10 Atlantic Richfield Company Method and composition for inhibiting corrosion in aqueous heat transfer systems
US5364961A (en) 1992-06-15 1994-11-15 Monsanto Company Process for making optically active α-amino ketones
US5380458A (en) * 1992-10-02 1995-01-10 Colgate-Palmolive Co. Stabilized hypohalite compositions
US5773627A (en) * 1995-03-21 1998-06-30 Betzdearborn Inc. Methods of inhibiting corrosion using halo-benzotriazoles
JP2677235B2 (ja) * 1995-03-30 1997-11-17 日本電気株式会社 半導体基板の洗浄装置及び洗浄方法並びに洗浄液の生成方法
JPH0959276A (ja) * 1995-08-11 1997-03-04 Kumiai Chem Ind Co Ltd 縮合ヘテロ環誘導体及び除草剤
JPH09279189A (ja) 1996-04-08 1997-10-28 Nippon Steel Corp 半導体基板用洗浄液
JPH1055993A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
AU6867498A (en) * 1997-03-21 1998-10-20 Scripps Research Institute, The Synthesis of alpha,beta-substituted amino amides, esters and acids
US5968280A (en) * 1997-11-12 1999-10-19 International Business Machines Corporation Method for cleaning a surface
US5889161A (en) * 1998-05-13 1999-03-30 Sri International N,N'-azobis-nitroazoles and analogs thereof as igniter compounds for use in energetic compositions
JP2000056478A (ja) 1998-08-04 2000-02-25 Showa Denko Kk サイドウォール除去液
DE69942615D1 (de) * 1998-10-23 2010-09-02 Fujifilm Electronic Materials Eine chemisch-mechanisch polierende aufschlämmung, eine beschleunigerlösung enthaltend
JP4224652B2 (ja) * 1999-03-08 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離液およびそれを用いたレジストの剥離方法
MY143399A (en) 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
JP3832399B2 (ja) * 2001-08-28 2006-10-11 栗田工業株式会社 殺菌殺藻剤組成物及び水系の殺菌殺藻方法
JP2003119494A (ja) 2001-10-05 2003-04-23 Nec Corp 洗浄組成物およびこれを用いた洗浄方法と洗浄装置
KR20030082767A (ko) * 2002-04-18 2003-10-23 주식회사 덕성 수용액에서의 전해질의 전기전도도가 높은 물질을 이용한레지스트 박리액 조성물
JP4267359B2 (ja) 2002-04-26 2009-05-27 花王株式会社 レジスト用剥離剤組成物
EP1512050A2 (en) * 2002-06-07 2005-03-09 Mallinckrodt Baker, Inc. Cleaning compositions for microelectronic substrates
EP1520211A2 (en) * 2002-06-07 2005-04-06 Mallinckrodt Baker, Inc. Microelectronic cleaning compositions containing oxidizers and organic solvents
BRPI0418529A (pt) 2004-02-11 2007-05-15 Mallinckrodt Baker Inc composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos

Also Published As

Publication number Publication date
JP2008156654A (ja) 2008-07-10
KR20050081155A (ko) 2005-08-18
WO2005083523A1 (en) 2005-09-09
CN101923294B (zh) 2013-12-04
IL177305A (en) 2011-06-30
TWI318238B (en) 2009-12-11
CN1954267A (zh) 2007-04-25
US20050176603A1 (en) 2005-08-11
JP2005227749A (ja) 2005-08-25
ES2334359T3 (es) 2010-03-09
EP1564595B1 (en) 2009-11-18
DK1564595T3 (da) 2010-01-18
EP1564595A3 (en) 2007-06-27
JP4393553B2 (ja) 2010-01-06
KR101316993B1 (ko) 2013-10-11
PL1564595T3 (pl) 2010-06-30
ZA200606544B (en) 2009-07-29
PT1564595E (pt) 2009-12-23
IL177305A0 (en) 2006-12-10
ATE449362T1 (de) 2009-12-15
TW200526774A (en) 2005-08-16
CA2555665C (en) 2012-10-02
DE602005017684D1 (de) 2009-12-31
EP1564595A2 (en) 2005-08-17
CA2555665A1 (en) 2005-09-09
CN101833251B (zh) 2013-11-13
CN1954267B (zh) 2010-12-08
KR20130086326A (ko) 2013-08-01
CN101833251A (zh) 2010-09-15
SG150508A1 (en) 2009-03-30
JP2008124494A (ja) 2008-05-29
NO20064056L (no) 2006-11-07
US7521406B2 (en) 2009-04-21
CN101923294A (zh) 2010-12-22
JP4208826B2 (ja) 2009-01-14

Similar Documents

Publication Publication Date Title
BRPI0418529A (pt) composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos
DE602005024772D1 (de) Nanoelektronik- und mikroelektronik-reinigungsmittel
BRPI0413595B8 (pt) sal de malonato, composição farmacêutica, uso de um sal de malonato, e, método de fabricação de um composto
CY1114660T1 (el) ΠΑΡΑΓΩΓΑ 2-ΑΔΑΜΑΝΤΥΛΟΥΡΙΑΣ ΩΣ ΕΚΛΕΚΤΙΚΟΙ ΑΝΑΣΤΟΛΕΙΣ 11β-HSD1
HRP20050383A2 (en) Novel amide compounds with mch antagonistic effect and medicaments comprising said compounds
EP1756325A4 (en) PALLADIUM ALLOY
NO20051985L (no) Indazoler, benzotiazoler og benzoisotiazoler, samt fremstilling og anvendelser derav.
DE602004003507D1 (de) Kationische cassia-derivate und anwendungen dafür
DE602004010178D1 (de) Benzothiazol-derivate zur behandlung von diabetes
MY147677A (en) Piperazinyl derivatives useful in the treatment of gpr38 receptor mediated diseases
ECSP066752A (es) Formas de sal de 4-(4-metilpiperazin-1-ilmetil)-n-[4-metil-3-(4-piridin-3-il)pirimidin-2-ilamino)fenil]-benzamida
ATE542795T1 (de) Benzylpiperazinderivate als motilin- rezeptorantagonisten
EP1840659A3 (en) Composition for cleaning microelectronic substrates containing halogen oxygen acids and derivatives thereof
MY141998A (en) Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof
DE602007004327D1 (de) Einen azepin-kern enthaltende antagonisten des histaminrezeptors
DE602006015686D1 (de) Als agonisten des gpr38-rezeptors geeignete biarylverbindungen
ATE384727T1 (de) Pyrimdobenzimidazolderivate und verwendung damit als agonisten oder antagonisten von melanocortinrezeptoren
NO20040416L (no) Platina-holdig keramisk blanding med antitrombotiske egenskaper og produkter som inneholder samme
DE602006010824D1 (de) (2R,4aR,10bR)-6-(2,6-Dimethoxypyridin-3-yl)-9-ethoxy-8-methoxy-1,2,3,4,4a,10b-hexahydrophenanthridin-2-ol Hydrochloridsalz
TW200745081A (en) Compounds
MA30706B1 (fr) Derives du tartrate destines a etre utilises comme inhibiteurs du facteur de coagulation ixa.
NO20056116L (no) Tiowolframatanaloger og anvendelse av slike
DE602005012826D1 (de) Neue mao-b-hemmer
RU2006128396A (ru) Сплав
FR2864344B1 (fr) Composant semiconducteur comprenant des zones a concentration de platine elevee

Legal Events

Date Code Title Description
B25G Requested change of headquarter approved

Owner name: MALLINCKRODT BAKER, INC. (US)

Free format text: SEDE ALTERADA CONFORME SOLICITADO NA PETICAO NO 020080021179/RJ DE 13/02/2008.

B25D Requested change of name of applicant approved

Owner name: AVANTOR PERFORMANCE MATERIALS, INC. (US)

Free format text: NOME ALTERADO DE: MALLINCKRODT BAKER, INC.

B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 9A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2260 DE 29/04/2014.