SG42438A1 - Process for fabricating a CVD aluminium layer in a semiconductor device - Google Patents

Process for fabricating a CVD aluminium layer in a semiconductor device

Info

Publication number
SG42438A1
SG42438A1 SG1996010578A SG1996010578A SG42438A1 SG 42438 A1 SG42438 A1 SG 42438A1 SG 1996010578 A SG1996010578 A SG 1996010578A SG 1996010578 A SG1996010578 A SG 1996010578A SG 42438 A1 SG42438 A1 SG 42438A1
Authority
SG
Singapore
Prior art keywords
fabricating
semiconductor device
aluminium layer
cvd
cvd aluminium
Prior art date
Application number
SG1996010578A
Other languages
English (en)
Inventor
Robert W Flordalice
Hisao Kawasaki
Roc Blumenthal
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of SG42438A1 publication Critical patent/SG42438A1/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425Barrier, adhesion or liner layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43Chemical deposition, e.g. chemical vapour deposition [CVD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44Physical vapour deposition [PVD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0451Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
SG1996010578A 1995-09-27 1996-09-04 Process for fabricating a CVD aluminium layer in a semiconductor device SG42438A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53436795A 1995-09-27 1995-09-27

Publications (1)

Publication Number Publication Date
SG42438A1 true SG42438A1 (en) 1997-08-15

Family

ID=24129737

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996010578A SG42438A1 (en) 1995-09-27 1996-09-04 Process for fabricating a CVD aluminium layer in a semiconductor device

Country Status (5)

Country Link
EP (1) EP0766302A3 (de)
JP (1) JPH09115908A (de)
KR (1) KR970018001A (de)
CN (1) CN1150325A (de)
SG (1) SG42438A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970072057A (ko) * 1996-04-04 1997-11-07 윌리엄 비. 켐플러 반도체 제조 공정시 입자 성장을 제어하는 방법
US6200433B1 (en) * 1999-11-01 2001-03-13 Applied Materials, Inc. IMP technology with heavy gas sputtering
CN1295756C (zh) * 2000-11-17 2007-01-17 东京毅力科创株式会社 在阻挡膜上形成钨膜的方法
KR100395906B1 (ko) * 2000-12-29 2003-08-27 주식회사 하이닉스반도체 반도체소자의 금속층 형성 방법
KR100515828B1 (ko) * 2002-11-25 2005-09-21 삼성에스디아이 주식회사 전도성 박막 제조 방법
CN104253087B (zh) * 2014-04-18 2019-06-11 上海华虹宏力半导体制造有限公司 铝金属工艺接触孔的填充方法
CN105304510B (zh) * 2014-07-22 2018-05-08 北京北方华创微电子装备有限公司 铝薄膜制备方法
CN104282536B (zh) * 2014-10-31 2017-05-24 丽晶美能(北京)电子技术有限公司 金属层的形成工艺
CN105112976A (zh) * 2015-07-31 2015-12-02 深圳市星火辉煌系统工程有限公司 一种cvd工装表面微弧改性工艺
CN105736903B (zh) * 2016-02-02 2018-05-01 上海交通大学 带有防溅屏结构的独立b型lng船液货舱绝热系统
US11421318B2 (en) * 2018-05-04 2022-08-23 Applied Materials, Inc. Methods and apparatus for high reflectivity aluminum layers

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH069199B2 (ja) * 1984-07-18 1994-02-02 株式会社日立製作所 配線構造体およびその製造方法
US5356836A (en) * 1993-08-19 1994-10-18 Industrial Technology Research Institute Aluminum plug process
KR0127271B1 (ko) * 1993-11-23 1998-04-02 김주용 반도체 소자의 금속배선 형성방법

Also Published As

Publication number Publication date
EP0766302A2 (de) 1997-04-02
KR970018001A (ko) 1997-04-30
EP0766302A3 (de) 1998-05-13
CN1150325A (zh) 1997-05-21
JPH09115908A (ja) 1997-05-02

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