SG42438A1 - Process for fabricating a CVD aluminium layer in a semiconductor device - Google Patents
Process for fabricating a CVD aluminium layer in a semiconductor deviceInfo
- Publication number
- SG42438A1 SG42438A1 SG1996010578A SG1996010578A SG42438A1 SG 42438 A1 SG42438 A1 SG 42438A1 SG 1996010578 A SG1996010578 A SG 1996010578A SG 1996010578 A SG1996010578 A SG 1996010578A SG 42438 A1 SG42438 A1 SG 42438A1
- Authority
- SG
- Singapore
- Prior art keywords
- fabricating
- semiconductor device
- aluminium layer
- cvd
- cvd aluminium
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/425—Barrier, adhesion or liner layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
- H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
- H10P14/44—Physical vapour deposition [PVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
- H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US53436795A | 1995-09-27 | 1995-09-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG42438A1 true SG42438A1 (en) | 1997-08-15 |
Family
ID=24129737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG1996010578A SG42438A1 (en) | 1995-09-27 | 1996-09-04 | Process for fabricating a CVD aluminium layer in a semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0766302A3 (de) |
| JP (1) | JPH09115908A (de) |
| KR (1) | KR970018001A (de) |
| CN (1) | CN1150325A (de) |
| SG (1) | SG42438A1 (de) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970072057A (ko) * | 1996-04-04 | 1997-11-07 | 윌리엄 비. 켐플러 | 반도체 제조 공정시 입자 성장을 제어하는 방법 |
| US6200433B1 (en) * | 1999-11-01 | 2001-03-13 | Applied Materials, Inc. | IMP technology with heavy gas sputtering |
| CN1295756C (zh) * | 2000-11-17 | 2007-01-17 | 东京毅力科创株式会社 | 在阻挡膜上形成钨膜的方法 |
| KR100395906B1 (ko) * | 2000-12-29 | 2003-08-27 | 주식회사 하이닉스반도체 | 반도체소자의 금속층 형성 방법 |
| KR100515828B1 (ko) * | 2002-11-25 | 2005-09-21 | 삼성에스디아이 주식회사 | 전도성 박막 제조 방법 |
| CN104253087B (zh) * | 2014-04-18 | 2019-06-11 | 上海华虹宏力半导体制造有限公司 | 铝金属工艺接触孔的填充方法 |
| CN105304510B (zh) * | 2014-07-22 | 2018-05-08 | 北京北方华创微电子装备有限公司 | 铝薄膜制备方法 |
| CN104282536B (zh) * | 2014-10-31 | 2017-05-24 | 丽晶美能(北京)电子技术有限公司 | 金属层的形成工艺 |
| CN105112976A (zh) * | 2015-07-31 | 2015-12-02 | 深圳市星火辉煌系统工程有限公司 | 一种cvd工装表面微弧改性工艺 |
| CN105736903B (zh) * | 2016-02-02 | 2018-05-01 | 上海交通大学 | 带有防溅屏结构的独立b型lng船液货舱绝热系统 |
| US11421318B2 (en) * | 2018-05-04 | 2022-08-23 | Applied Materials, Inc. | Methods and apparatus for high reflectivity aluminum layers |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH069199B2 (ja) * | 1984-07-18 | 1994-02-02 | 株式会社日立製作所 | 配線構造体およびその製造方法 |
| US5356836A (en) * | 1993-08-19 | 1994-10-18 | Industrial Technology Research Institute | Aluminum plug process |
| KR0127271B1 (ko) * | 1993-11-23 | 1998-04-02 | 김주용 | 반도체 소자의 금속배선 형성방법 |
-
1996
- 1996-09-04 SG SG1996010578A patent/SG42438A1/en unknown
- 1996-09-23 KR KR1019960043381A patent/KR970018001A/ko not_active Withdrawn
- 1996-09-24 JP JP8273096A patent/JPH09115908A/ja active Pending
- 1996-09-24 EP EP96115276A patent/EP0766302A3/de not_active Withdrawn
- 1996-09-27 CN CN96113088A patent/CN1150325A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0766302A2 (de) | 1997-04-02 |
| KR970018001A (ko) | 1997-04-30 |
| EP0766302A3 (de) | 1998-05-13 |
| CN1150325A (zh) | 1997-05-21 |
| JPH09115908A (ja) | 1997-05-02 |
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