SG60016A1 - Feasible gas-dielectric interconnect process - Google Patents

Feasible gas-dielectric interconnect process

Info

Publication number
SG60016A1
SG60016A1 SG1996010573A SG1996010573A SG60016A1 SG 60016 A1 SG60016 A1 SG 60016A1 SG 1996010573 A SG1996010573 A SG 1996010573A SG 1996010573 A SG1996010573 A SG 1996010573A SG 60016 A1 SG60016 A1 SG 60016A1
Authority
SG
Singapore
Prior art keywords
interconnect process
dielectric interconnect
feasible gas
feasible
gas
Prior art date
Application number
SG1996010573A
Other languages
English (en)
Inventor
Minaskhisundaran Balasub Anand
Hideki Shibata
Masaki Yamada
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of SG60016A1 publication Critical patent/SG60016A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • H10W20/0633—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material using subtractive patterning of the conductive members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/072—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/077—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers on sidewalls or on top surfaces of conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/46—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
SG1996010573A 1995-12-28 1996-08-21 Feasible gas-dielectric interconnect process SG60016A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP35219695 1995-12-28
JP09952996A JP3887035B2 (ja) 1995-12-28 1996-03-29 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
SG60016A1 true SG60016A1 (en) 1999-02-22

Family

ID=26440655

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996010573A SG60016A1 (en) 1995-12-28 1996-08-21 Feasible gas-dielectric interconnect process

Country Status (7)

Country Link
US (2) US6307265B1 (de)
EP (1) EP0783178A3 (de)
JP (1) JP3887035B2 (de)
KR (2) KR100279790B1 (de)
CN (1) CN1160772C (de)
SG (1) SG60016A1 (de)
TW (1) TW317010B (de)

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US20020076917A1 (en) * 1999-12-20 2002-06-20 Edward P Barth Dual damascene interconnect structure using low stress flourosilicate insulator with copper conductors
JP3895126B2 (ja) * 2001-04-23 2007-03-22 株式会社東芝 半導体装置の製造方法
WO2003021659A1 (en) 2001-09-04 2003-03-13 Applied Materials, Inc. Methods and apparatus for etching metal layers on substrates
US6555467B2 (en) * 2001-09-28 2003-04-29 Sharp Laboratories Of America, Inc. Method of making air gaps copper interconnect
US7214594B2 (en) * 2002-03-26 2007-05-08 Intel Corporation Method of making semiconductor device using a novel interconnect cladding layer
US6734094B2 (en) * 2002-04-29 2004-05-11 Intel Corporation Method of forming an air gap within a structure by exposing an ultraviolet sensitive material to ultraviolet radiation
TWI338346B (en) * 2002-09-20 2011-03-01 Semiconductor Energy Lab Display device and manufacturing method thereof
WO2004086143A2 (en) * 2003-03-21 2004-10-07 Applied Materials, Inc. Multi-step process for etching photomasks
US7077973B2 (en) * 2003-04-18 2006-07-18 Applied Materials, Inc. Methods for substrate orientation
US7169706B2 (en) * 2003-10-16 2007-01-30 Advanced Micro Devices, Inc. Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper deposition
US6875685B1 (en) * 2003-10-24 2005-04-05 International Business Machines Corporation Method of forming gas dielectric with support structure
US20050152594A1 (en) * 2003-11-10 2005-07-14 Hermes-Microvision, Inc. Method and system for monitoring IC process
US7084479B2 (en) * 2003-12-08 2006-08-01 International Business Machines Corporation Line level air gaps
TWI292933B (en) * 2004-03-17 2008-01-21 Imec Inter Uni Micro Electr Method of manufacturing a semiconductor device having damascene structures with air gaps
TWI273671B (en) * 2004-03-18 2007-02-11 Imec Inter Uni Micro Electr Method of manufacturing a semiconductor device having damascene structures with air gaps
US7339272B2 (en) * 2004-06-14 2008-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with scattering bars adjacent conductive lines
JP4679193B2 (ja) 2005-03-22 2011-04-27 株式会社東芝 半導体装置の製造方法及び半導体装置
JP2007035996A (ja) * 2005-07-28 2007-02-08 Toshiba Corp 半導体装置およびその製造方法
JP4197694B2 (ja) * 2005-08-10 2008-12-17 株式会社東芝 半導体装置およびその製造方法
KR100780627B1 (ko) 2005-09-27 2007-11-29 주식회사 하이닉스반도체 탄화된 질화장벽층을 구비한 반도체 소자 및 그의 제조방법
JP2009094378A (ja) 2007-10-11 2009-04-30 Panasonic Corp 半導体装置及びその製造方法
US20090121356A1 (en) * 2007-11-12 2009-05-14 Rohm Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US8237272B2 (en) * 2010-02-16 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive pillar structure for semiconductor substrate and method of manufacture
US8338917B2 (en) * 2010-08-13 2012-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple seal ring structure
JP2014096553A (ja) * 2012-10-09 2014-05-22 Tokyo Electron Ltd プラズマ処理方法、及びプラズマ処理装置
KR102037830B1 (ko) 2013-05-20 2019-10-29 삼성전자주식회사 반도체 장치 및 그 제조 방법
JP5970004B2 (ja) * 2014-01-09 2016-08-17 東京エレクトロン株式会社 半導体装置の製造方法
KR102140048B1 (ko) * 2014-02-18 2020-07-31 삼성전자주식회사 자기 메모리 소자를 위한 자기 터널 접합 구조물 형성 방법
US10490497B2 (en) * 2014-06-13 2019-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Selective formation of conductor nanowires
US9818642B2 (en) * 2015-04-15 2017-11-14 Nxp Usa, Inc. Method of forming inter-level dielectric structures on semiconductor devices
US9449871B1 (en) * 2015-11-18 2016-09-20 International Business Machines Corporation Hybrid airgap structure with oxide liner
US11227798B2 (en) 2016-09-29 2022-01-18 Intel Corporation Metal aluminum gallium indium carbide thin films as liners and barriers for interconnects
US11171089B2 (en) * 2018-10-31 2021-11-09 Taiwan Semiconductor Manufacturing Company, Ltd. Line space, routing and patterning methodology
JP2022065303A (ja) * 2020-10-15 2022-04-27 東京エレクトロン株式会社 基板処理方法および基板処理装置
TWI888706B (zh) * 2021-03-10 2025-07-01 新加坡商發明與合作實驗室有限公司 內連線結構及其製造方法
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Also Published As

Publication number Publication date
US6306753B1 (en) 2001-10-23
EP0783178A3 (de) 1998-10-07
KR100279790B1 (ko) 2001-03-02
EP0783178A2 (de) 1997-07-09
US6307265B1 (en) 2001-10-23
CN1157476A (zh) 1997-08-20
JP3887035B2 (ja) 2007-02-28
CN1160772C (zh) 2004-08-04
KR100308240B1 (ko) 2001-11-07
JPH09237831A (ja) 1997-09-09
KR970053624A (ko) 1997-07-31
TW317010B (de) 1997-10-01

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