SG63683A1 - Polymer and resist material - Google Patents

Polymer and resist material

Info

Publication number
SG63683A1
SG63683A1 SG1996011792A SG1996011792A SG63683A1 SG 63683 A1 SG63683 A1 SG 63683A1 SG 1996011792 A SG1996011792 A SG 1996011792A SG 1996011792 A SG1996011792 A SG 1996011792A SG 63683 A1 SG63683 A1 SG 63683A1
Authority
SG
Singapore
Prior art keywords
polymer
resist material
acetal
resolution
molecule
Prior art date
Application number
SG1996011792A
Other languages
English (en)
Inventor
Fumiyoshi Urano
Hirotoshi Fhujie
Keiji Oono
Original Assignee
Wako Pure Chem Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26388161&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG63683(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Wako Pure Chem Ind Ltd filed Critical Wako Pure Chem Ind Ltd
Publication of SG63683A1 publication Critical patent/SG63683A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C08F212/24—Phenols or alcohols
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
    • C09D125/18—Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Polymers & Plastics (AREA)
  • Emergency Medicine (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
SG1996011792A 1996-02-09 1996-12-18 Polymer and resist material SG63683A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4795596 1996-02-09
JP16838796 1996-06-07

Publications (1)

Publication Number Publication Date
SG63683A1 true SG63683A1 (en) 1999-03-30

Family

ID=26388161

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996011792A SG63683A1 (en) 1996-02-09 1996-12-18 Polymer and resist material

Country Status (9)

Country Link
US (1) US6033826A (de)
EP (1) EP0789279B2 (de)
JP (1) JP3724098B2 (de)
KR (1) KR100286960B1 (de)
CN (1) CN1145078C (de)
AT (1) ATE199985T1 (de)
DE (1) DE69612182T3 (de)
SG (1) SG63683A1 (de)
TW (1) TW440744B (de)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6090526A (en) * 1996-09-13 2000-07-18 Shipley Company, L.L.C. Polymers and photoresist compositions
KR100250637B1 (ko) * 1997-01-06 2000-04-01 윤종용 디하이드로피란에 의한 웨이퍼 프라임 방법
DE69822632T2 (de) * 1997-07-15 2005-02-17 E.I. Du Pont De Nemours And Co., Wilmington Resiste mit verbesserter auflösungsinhibierung für die mikrolithographie
KR19990036901A (ko) * 1997-10-08 1999-05-25 카나가와 치히로 폴리스티렌계 고분자 화합물, 화학증폭 포지티브형 레지스트 재료 및 패턴 형성 방법
JP3813721B2 (ja) * 1997-12-26 2006-08-23 富士写真フイルム株式会社 ポジ型感光性組成物
US6037097A (en) * 1998-01-27 2000-03-14 International Business Machines Corporation E-beam application to mask making using new improved KRS resist system
JP3955384B2 (ja) * 1998-04-08 2007-08-08 Ａｚエレクトロニックマテリアルズ株式会社 化学増幅型レジスト組成物
JP3743187B2 (ja) * 1998-05-08 2006-02-08 住友化学株式会社 フォトレジスト組成物
TW473459B (en) * 1998-12-10 2002-01-21 Ibm Method for forming transparent conductive film using chemically amplified resist
TWI277830B (en) * 1999-01-28 2007-04-01 Sumitomo Chemical Co Resist composition
JP3785846B2 (ja) 1999-02-05 2006-06-14 住友化学株式会社 化学増幅型ポジ型レジスト組成物
CN1170204C (zh) * 1999-02-15 2004-10-06 克拉瑞特金融(Bvi)有限公司 敏射线树脂组合物
TW552475B (en) * 1999-06-09 2003-09-11 Wako Pure Chem Ind Ltd A resist composition
JP3353885B2 (ja) * 1999-12-28 2002-12-03 日本電気株式会社 化学増幅型レジスト
EP1117003B1 (de) 2000-01-17 2012-06-20 Shin-Etsu Chemical Co., Ltd. Verfahren zur Herstellung von chemisch verstärkter Resistzusammensetzung
JP4991074B2 (ja) * 2000-02-27 2012-08-01 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 光反応性酸発生剤およびそれを含有してなるフォトレジスト
KR100674073B1 (ko) * 2000-03-07 2007-01-26 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭 포지티브형 레지스트 재료
US6682869B2 (en) * 2000-03-07 2004-01-27 Shin-Etu Chemical Co., Ltd. Chemical amplification, positive resist compositions
JP4329214B2 (ja) * 2000-03-28 2009-09-09 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP4150491B2 (ja) * 2000-07-13 2008-09-17 富士フイルム株式会社 ポジ型感光性組成物
JP2002122987A (ja) * 2000-10-16 2002-04-26 Kansai Paint Co Ltd ネガ型感光性樹脂組成物、ネガ型感光性ドライフィルム、その組成物を使用して得られる材料及びパターン形成方法
JP2002122986A (ja) * 2000-10-16 2002-04-26 Kansai Paint Co Ltd ポジ型感光性樹脂組成物、ポジ型感光性ドライフィルム、その組成物を使用して得られる材料及びパターン形成方法
EP1204001B1 (de) 2000-11-01 2013-09-11 Shin-Etsu Chemical Co., Ltd. Resistzusammensetzung und Mustererzeugungsverfahren
TW538316B (en) * 2001-01-19 2003-06-21 Sumitomo Chemical Co Chemical amplifying type positive resist composition
JP4514978B2 (ja) * 2001-03-28 2010-07-28 國宏 市村 化学増幅型ポジ型レジスト組成物
US6936398B2 (en) * 2001-05-09 2005-08-30 Massachusetts Institute Of Technology Resist with reduced line edge roughness
JP3771815B2 (ja) * 2001-05-31 2006-04-26 東京応化工業株式会社 感光性積層体、それに用いるポジ型レジスト組成物及びそれらを用いるレジストパターン形成方法
TWI267697B (en) * 2001-06-28 2006-12-01 Tokyo Ohka Kogyo Co Ltd Chemical amplified type positive resist component and resist packed-layer material and forming method of resist pattern and manufacturing method of semiconductor device
JP4727092B2 (ja) * 2001-09-10 2011-07-20 東京応化工業株式会社 化学増幅型レジスト組成物
JP3886358B2 (ja) * 2001-10-31 2007-02-28 松下電器産業株式会社 パターン形成方法
JP4123920B2 (ja) * 2001-12-20 2008-07-23 Ｊｓｒ株式会社 共重合体、重合体混合物および感放射線性樹脂組成物
TW200401164A (en) 2002-03-01 2004-01-16 Shipley Co Llc Photoresist compositions
EP1516230B1 (de) 2002-06-26 2015-12-30 FujiFilm Electronic Materials USA, Inc. Lichtempfindliche zusammensetzungen
US7666569B2 (en) * 2002-12-26 2010-02-23 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method for forming resist pattern
JP4152810B2 (ja) * 2003-06-13 2008-09-17 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4088784B2 (ja) 2003-06-19 2008-05-21 信越化学工業株式会社 高分子化合物の製造方法及びレジスト材料
US7250246B2 (en) 2004-01-26 2007-07-31 Fujifilm Corporation Positive resist composition and pattern formation method using the same
JP2005326491A (ja) * 2004-05-12 2005-11-24 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
US8715918B2 (en) * 2007-09-25 2014-05-06 Az Electronic Materials Usa Corp. Thick film resists
JP4961324B2 (ja) * 2007-10-26 2012-06-27 富士フイルム株式会社 電子線、ｘ線又はｅｕｖ用ポジ型レジスト組成物及びそれを用いたパターン形成方法
KR102128155B1 (ko) * 2013-09-25 2020-06-29 도오꾜오까고오교 가부시끼가이샤 감방사선성 조성물 및 패턴 제조 방법
JP6228796B2 (ja) * 2013-09-26 2017-11-08 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法
CN104834182B (zh) * 2015-05-20 2019-05-03 杭州福斯特应用材料股份有限公司 一种具有高分辨率和优异掩孔性能的感光干膜
KR102261808B1 (ko) 2016-08-09 2021-06-07 리지필드 액퀴지션 환경적으로 안정한 후막성 화학증폭형 레지스트
JP7310471B2 (ja) * 2019-09-12 2023-07-19 Jsr株式会社 パターン形成方法及び組成物
KR102458068B1 (ko) * 2020-11-02 2022-10-24 인하대학교 산학협력단 레지스트 조성물 및 이를 사용한 패턴 형성 방법
KR102865174B1 (ko) * 2023-02-17 2025-09-30 주식회사 이엔에프테크놀로지 용해도가 조절된 스티렌계 음이온 중합체 및 이의 제조방법
US20250102910A1 (en) * 2023-07-17 2025-03-27 Dupont Electronic Materials International, Llc Photoresist composition and metallization method

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4603101A (en) 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
DE3817012A1 (de) 1988-05-19 1989-11-30 Basf Ag Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern
JPH0225850A (ja) 1988-07-15 1990-01-29 Hitachi Ltd 放射線感応性組成物およびそれを用いたパターン形成法
JP2578646B2 (ja) 1988-07-18 1997-02-05 三洋電機株式会社 非水系二次電池
JPH0262544A (ja) 1988-08-30 1990-03-02 Tosoh Corp フォトレジスト組成物
EP0366590B2 (de) 1988-10-28 2001-03-21 International Business Machines Corporation Positiv arbeitende hochempfindliche Photolack-Zusammensetzung
JPH02161436A (ja) 1988-12-15 1990-06-21 Oki Electric Ind Co Ltd フォトレジスト組成物及びその使用方法
EP0388343B1 (de) 1989-03-14 1996-07-17 International Business Machines Corporation Chemisch amplifizierter Photolack
JPH0383063A (ja) 1989-08-28 1991-04-09 Kanto Chem Co Inc パターン形成方法
JP2500533B2 (ja) 1990-01-30 1996-05-29 和光純薬工業株式会社 新規なジアゾジスルホン化合物
DE69125634T2 (de) 1990-01-30 1998-01-02 Wako Pure Chem Ind Ltd Chemisch verstärktes Photolack-Material
US5216135A (en) 1990-01-30 1993-06-01 Wako Pure Chemical Industries, Ltd. Diazodisulfones
JP2970879B2 (ja) 1990-01-30 1999-11-02 和光純薬工業株式会社 化学増幅型レジスト材料
DE4007924A1 (de) 1990-03-13 1991-09-19 Basf Ag Strahlungsempfindliches gemisch
JPH03282550A (ja) 1990-03-30 1991-12-12 Oki Electric Ind Co Ltd フォトレジスト組成物
JP3008594B2 (ja) 1990-08-31 2000-02-14 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
JP3031421B2 (ja) 1990-11-28 2000-04-10 信越化学工業株式会社 化学増幅ポジ型レジスト材
JP3030672B2 (ja) 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
JP2862720B2 (ja) 1991-11-11 1999-03-03 信越化学工業株式会社 ｔ−ブトキシカルボニル基で部分エステル化された狭分散性ポリヒドロキシスチレン及びその製造方法
DE69218393T2 (de) * 1991-12-16 1997-10-16 Matsushita Electric Ind Co Ltd Resistmaterial
DE4202845A1 (de) 1992-01-31 1993-08-05 Basf Ag Strahlungsempfindliches gemisch
JPH0649134A (ja) 1992-07-31 1994-02-22 Shin Etsu Chem Co Ltd ｔｅｒｔ−ブトキシカルボニル基で部分エステル化されたｍ−ヒドロキシスチレン−スチレン又はαメチルスチレンブロック共重合体及びその製造方法
JP3342124B2 (ja) † 1992-09-14 2002-11-05 和光純薬工業株式会社 微細パターン形成材料及びパターン形成方法
EP0588544A3 (en) * 1992-09-14 1994-09-28 Wako Pure Chem Ind Ltd Fine pattern forming material and pattern formation process
US5352564A (en) * 1993-01-19 1994-10-04 Shin-Etsu Chemical Co., Ltd. Resist compositions
JP2953251B2 (ja) 1993-01-19 1999-09-27 信越化学工業株式会社 レジスト材料
JPH07268030A (ja) 1994-03-29 1995-10-17 Shin Etsu Chem Co Ltd テトラヒドロピラニル基で部分エーテル化されたポリヒドロキシスチレン及びその製造方法
TW394861B (en) * 1994-04-25 2000-06-21 Tokyo Ohka Kogyo Co Ltd Positive resist composition
US5558971A (en) † 1994-09-02 1996-09-24 Wako Pure Chemical Industries, Ltd. Resist material

Also Published As

Publication number Publication date
EP0789279A1 (de) 1997-08-13
DE69612182T2 (de) 2001-09-06
JP3724098B2 (ja) 2005-12-07
KR100286960B1 (ko) 2001-09-07
EP0789279B2 (de) 2004-12-08
CN1145078C (zh) 2004-04-07
DE69612182D1 (de) 2001-04-26
US6033826A (en) 2000-03-07
JPH1053621A (ja) 1998-02-24
TW440744B (en) 2001-06-16
ATE199985T1 (de) 2001-04-15
DE69612182T3 (de) 2005-08-04
CN1159453A (zh) 1997-09-17
EP0789279B1 (de) 2001-03-21
KR980003842A (ko) 1998-03-30

Similar Documents

Publication Publication Date Title
SG63683A1 (en) Polymer and resist material
SG75110A1 (en) Polymer composition and resist material
FI953307L (fi) Biohajoavat termoplastiset polymeeriseoskoostumukset, joilla on nopeutettu biohajoaminen
BR9301544A (pt) Composicao
AU5857499A (en) Conjugated polymers containing 2,7 fluorenyl units with improved properties
EP0517222A3 (en) Polyethylene moulding composition
ES2143502T3 (es) Composicion de resina de estireno.
EP0622391A3 (de) Überzugsmittel, auf Basis von Polyestern aus Perfluorpolyethern.
NO20031878D0 (no) Polyetylenrör-harpikser og fremstilling derav
EP0668332A3 (de) Strahlungshärtbare, pigmentierte Tintenmassen und Verfahren zum Dekorieren von Gegenständen unter deren Verwendung.
AU669108B2 (en) Washing and/or conditioning composition for keratinous materials based on a silicone containing a hydroxyacylamino functional group and on substantive polymers
TW367430B (en) Copolymers containing N-vinyllactam derivatives, preparation methods thereof and photoresist composition therefrom
FR2801052B1 (fr) Naphtopyranes anneles en c5-c6 par un carbocycle de type indene ou dihydronaphtalene et les compositions et matrices (co) polymeres les renfermant
FI941533A0 (fi) Uudet polymeerin avulla muunnetut, hapetetut asfalttikoostumukset ja niiden valmistusmenetelmä
GB2340830B (en) Novel monomers for photoresist polymers thereof and photoresist compositions using the same
MY122873A (en) Resist compositions with polymers having pendant groups containing plural acid labile moieties.
BR9915746A (pt) Tintas para impressão compreendendo uma resina vinìlica ramificada
GB2353526B (en) Novel photoresist monomers,polymers thereof,and photoresist compositions containing the same
ATE282674T1 (de) Pigmentdruckzusammensetzungen
GB2357775B (en) Photosensitive polymer having cyclic backbone and resist composition containing the same
DE69927423D1 (de) Gegen Dendritenbildung widerstandsfähiges Kabel
ITTO940416A0 (it) Cariche pigmentati per composizioni polimeriche.
ATE112793T1 (de) Mit keton- oder ätherketon-gruppenhaltigen verbindungen modifizierte konsensationspolymere.
DE69208589D1 (de) Thermoplastische polymerische Mischung
FR2709546B1 (fr) Procédés et dispositifs de réalisation de masses d'étalonnage.