SG65687A1 - A method to eliminate coil sputtering in an icp source - Google Patents

A method to eliminate coil sputtering in an icp source

Info

Publication number
SG65687A1
SG65687A1 SG1997003701A SG1997003701A SG65687A1 SG 65687 A1 SG65687 A1 SG 65687A1 SG 1997003701 A SG1997003701 A SG 1997003701A SG 1997003701 A SG1997003701 A SG 1997003701A SG 65687 A1 SG65687 A1 SG 65687A1
Authority
SG
Singapore
Prior art keywords
icp source
coil sputtering
eliminate coil
eliminate
sputtering
Prior art date
Application number
SG1997003701A
Other languages
English (en)
Inventor
Xu Zheng
Fusen Chen
Nulman Jaim
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG65687A1 publication Critical patent/SG65687A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Plasma Technology (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electron Sources, Ion Sources (AREA)
SG1997003701A 1996-10-17 1997-10-09 A method to eliminate coil sputtering in an icp source SG65687A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/733,620 US6514390B1 (en) 1996-10-17 1996-10-17 Method to eliminate coil sputtering in an ICP source

Publications (1)

Publication Number Publication Date
SG65687A1 true SG65687A1 (en) 1999-06-22

Family

ID=24948413

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997003701A SG65687A1 (en) 1996-10-17 1997-10-09 A method to eliminate coil sputtering in an icp source

Country Status (6)

Country Link
US (1) US6514390B1 (de)
EP (1) EP0837490A3 (de)
JP (1) JPH10130834A (de)
KR (1) KR19980032837A (de)
SG (1) SG65687A1 (de)
TW (1) TW382737B (de)

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US11037765B2 (en) * 2018-07-03 2021-06-15 Tokyo Electron Limited Resonant structure for electron cyclotron resonant (ECR) plasma ionization
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GB2588947B (en) 2019-11-15 2024-02-21 Dyson Technology Ltd A method of manufacturing solid state battery cathodes for use in batteries
GB2588935B (en) 2019-11-15 2022-09-07 Dyson Technology Ltd Method and apparatus for sputter deposition of target material to a substrate
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Also Published As

Publication number Publication date
TW382737B (en) 2000-02-21
US6514390B1 (en) 2003-02-04
KR19980032837A (ko) 1998-07-25
EP0837490A2 (de) 1998-04-22
JPH10130834A (ja) 1998-05-19
EP0837490A3 (de) 1998-09-16

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