SG71903A1 - Process of reclamation of soi substrate and reproduced substrate - Google Patents

Process of reclamation of soi substrate and reproduced substrate

Info

Publication number
SG71903A1
SG71903A1 SG1999000166A SG1999000166A SG71903A1 SG 71903 A1 SG71903 A1 SG 71903A1 SG 1999000166 A SG1999000166 A SG 1999000166A SG 1999000166 A SG1999000166 A SG 1999000166A SG 71903 A1 SG71903 A1 SG 71903A1
Authority
SG
Singapore
Prior art keywords
substrate
reclamation
reproduced
soi
soi substrate
Prior art date
Application number
SG1999000166A
Other languages
English (en)
Inventor
Yonehara Takao
Ito Masataka
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of SG71903A1 publication Critical patent/SG71903A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1924—Preparing SOI wafers with separation/delamination along a porous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
SG1999000166A 1998-01-30 1999-01-26 Process of reclamation of soi substrate and reproduced substrate SG71903A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1881198 1998-01-30

Publications (1)

Publication Number Publication Date
SG71903A1 true SG71903A1 (en) 2000-04-18

Family

ID=11981981

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1999000166A SG71903A1 (en) 1998-01-30 1999-01-26 Process of reclamation of soi substrate and reproduced substrate

Country Status (7)

Country Link
US (1) US6613676B1 (fr)
EP (1) EP0933810A1 (fr)
KR (1) KR100327840B1 (fr)
CN (1) CN1126148C (fr)
AU (1) AU1426799A (fr)
CA (1) CA2260489C (fr)
SG (1) SG71903A1 (fr)

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FR2797714B1 (fr) * 1999-08-20 2001-10-26 Soitec Silicon On Insulator Procede de traitement de substrats pour la microelectronique et substrats obtenus par ce procede
US6902987B1 (en) 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US6809031B1 (en) * 2000-12-27 2004-10-26 Lam Research Corporation Method for manufacturing a reclaimable test pattern wafer for CMP applications
JP3990575B2 (ja) * 2001-03-05 2007-10-17 三井造船株式会社 膜厚測定用モニタウェハ
KR100386848B1 (ko) * 2001-05-09 2003-06-09 엘지.필립스 엘시디 주식회사 박막 트랜지스터 표시소자의 반도체층 재생방법
JP2004247610A (ja) * 2003-02-14 2004-09-02 Canon Inc 基板の製造方法
JP4438049B2 (ja) * 2003-08-11 2010-03-24 キヤノン株式会社 電界効果トランジスタ及びそれを用いたセンサ並びにその製造方法
KR100856323B1 (ko) * 2003-12-31 2008-09-03 동부일렉트로닉스 주식회사 더미 웨이퍼 재생방법
TWI235407B (en) * 2004-05-10 2005-07-01 Mosel Vitelic Inc Wafer and the manufacturing and reclaiming method therefor
US7402520B2 (en) * 2004-11-26 2008-07-22 Applied Materials, Inc. Edge removal of silicon-on-insulator transfer wafer
CN101228613A (zh) * 2005-07-22 2008-07-23 胜高股份有限公司 Simox晶片的制造方法及用该方法制造的simox晶片
FR2909276A1 (fr) 2006-12-04 2008-06-06 Satelec Sa Dispositif de photopolymerisation automatique
US8563332B2 (en) * 2007-09-03 2013-10-22 Panasonic Corporation Wafer reclamation method and wafer reclamation apparatus
US20090139558A1 (en) * 2007-11-29 2009-06-04 Shunpei Yamazaki Photoelectric conversion device and manufacturing method thereof
JP4636110B2 (ja) * 2008-04-10 2011-02-23 信越半導体株式会社 Ｓｏｉ基板の製造方法
EP2219208B1 (fr) * 2009-02-12 2012-08-29 Soitec Procédé pour régénérer une surface de substrat
CN102556950B (zh) * 2012-02-07 2014-08-27 中国科学院光电技术研究所 一种基于三层结构的可调谐人工电磁材料及其制作方法
CN103904001B (zh) * 2014-03-20 2017-01-04 上海华力微电子有限公司 一种用于氮掺杂碳化硅薄膜的离线监控方法
CN108257885B (zh) * 2016-12-28 2021-01-05 无锡华润上华科技有限公司 物理气相沉积中钛或氮化钛颗粒控片的使用方法
CN112002639A (zh) * 2020-07-21 2020-11-27 上海新昇半导体科技有限公司 一种外延晶圆的制造方法和外延晶圆
CN112582332A (zh) * 2020-12-08 2021-03-30 上海新昇半导体科技有限公司 一种绝缘体上硅结构及其方法
CN113192823B (zh) * 2021-04-27 2022-06-21 麦斯克电子材料股份有限公司 一种soi键合工艺后衬底片的再生加工方法
CN116646250A (zh) * 2023-06-20 2023-08-25 中国科学院上海微系统与信息技术研究所 一种碳化硅场效应管的制备方法
CN116535108B (zh) * 2023-07-05 2023-09-22 上海传芯半导体有限公司 衬底回收方法、再生的光掩模基版及光掩模版的制造方法
CN116779423B (zh) * 2023-08-24 2024-02-23 粤芯半导体技术股份有限公司 控片回收方法及硅片
KR102769305B1 (ko) * 2023-12-12 2025-02-14 케이피엑스케미칼 주식회사 폐연마패드 재생방법 및 이 방법으로 재생된 재생 연마패드

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US3559281A (en) * 1968-11-27 1971-02-02 Motorola Inc Method of reclaiming processed semiconductior wafers
SG59963A1 (en) 1990-08-03 1999-02-22 Canon Kk Semiconductor member and process for preparing semiconductor member
US5131979A (en) * 1991-05-21 1992-07-21 Lawrence Technology Semiconductor EPI on recycled silicon wafers
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
EP0553852B1 (fr) 1992-01-30 2003-08-20 Canon Kabushiki Kaisha Procédé de production de substrats semi-conducteurs
JP3416163B2 (ja) * 1992-01-31 2003-06-16 キヤノン株式会社 半導体基板及びその作製方法
DE69312636T2 (de) 1992-11-09 1998-02-05 Canon Kk Anodisierungsapparat mit einer Trägervorrichtung für das zu behandelnde Substrat
JPH07122532A (ja) 1993-10-26 1995-05-12 Mitsubishi Materials Corp 再生ウェーハの製造方法
JP3293736B2 (ja) 1996-02-28 2002-06-17 キヤノン株式会社 半導体基板の作製方法および貼り合わせ基体
JP3257580B2 (ja) 1994-03-10 2002-02-18 キヤノン株式会社 半導体基板の作製方法
US5622875A (en) * 1994-05-06 1997-04-22 Kobe Precision, Inc. Method for reclaiming substrate from semiconductor wafers
US6107213A (en) * 1996-02-01 2000-08-22 Sony Corporation Method for making thin film semiconductor
US5937312A (en) * 1995-03-23 1999-08-10 Sibond L.L.C. Single-etch stop process for the manufacture of silicon-on-insulator wafers
US5855735A (en) * 1995-10-03 1999-01-05 Kobe Precision, Inc. Process for recovering substrates
KR0165467B1 (ko) 1995-10-31 1999-02-01 김광호 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법
KR100209365B1 (ko) * 1995-11-01 1999-07-15 김영환 에스.오.아이 반도체 웨이퍼의 제조방법
JP3605927B2 (ja) 1996-02-28 2004-12-22 株式会社神戸製鋼所 ウエハーまたは基板材料の再生方法
DE69738020T2 (de) * 1996-06-28 2008-07-31 Sumco Corp. Verfahren und anordnung zur thermischen behandlung eines einkristallinischen plättchens, einkristallinisches plättchen und verfahren zur herstellung eines einkristallinischen plättchens
KR100232886B1 (ko) * 1996-11-23 1999-12-01 김영환 Soi 웨이퍼 제조방법
US6255159B1 (en) * 1997-07-14 2001-07-03 Micron Technology, Inc. Method to form hemispherical grained polysilicon
US5882987A (en) * 1997-08-26 1999-03-16 International Business Machines Corporation Smart-cut process for the production of thin semiconductor material films
US5920764A (en) * 1997-09-30 1999-07-06 International Business Machines Corporation Process for restoring rejected wafers in line for reuse as new

Also Published As

Publication number Publication date
KR100327840B1 (ko) 2002-03-09
KR19990068239A (ko) 1999-08-25
US6613676B1 (en) 2003-09-02
AU1426799A (en) 1999-08-19
CN1126148C (zh) 2003-10-29
CA2260489A1 (fr) 1999-07-30
CA2260489C (fr) 2004-04-27
CN1234601A (zh) 1999-11-10
EP0933810A1 (fr) 1999-08-04

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