TW200425555A - Electric device with phase change material and method of manufacturing the same - Google Patents

Electric device with phase change material and method of manufacturing the same Download PDF

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Publication number
TW200425555A
TW200425555A TW092135580A TW92135580A TW200425555A TW 200425555 A TW200425555 A TW 200425555A TW 092135580 A TW092135580 A TW 092135580A TW 92135580 A TW92135580 A TW 92135580A TW 200425555 A TW200425555 A TW 200425555A
Authority
TW
Taiwan
Prior art keywords
phase
resistance
electronic device
region
resistor
Prior art date
Application number
TW092135580A
Other languages
English (en)
Chinese (zh)
Inventor
Martijn Henri Richard Lankhorst
Erwin Rinaldo Meinders
Robertus Adrianus Maria Wolters
Franciscus Petrus Widdershoven
Wilhelmus Sebastianus Marcus Maria Ketelaars
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200425555A publication Critical patent/TW200425555A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/861—Thermal details
    • H10N70/8613—Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Inorganic Insulating Materials (AREA)
  • Ceramic Capacitors (AREA)
  • Resistance Heating (AREA)
  • Thermistors And Varistors (AREA)
  • Conductive Materials (AREA)
TW092135580A 2002-12-19 2003-12-16 Electric device with phase change material and method of manufacturing the same TW200425555A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP02080430 2002-12-19
EP03100583 2003-03-07
EP03103338 2003-09-10

Publications (1)

Publication Number Publication Date
TW200425555A true TW200425555A (en) 2004-11-16

Family

ID=32685711

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092135580A TW200425555A (en) 2002-12-19 2003-12-16 Electric device with phase change material and method of manufacturing the same

Country Status (9)

Country Link
US (1) US7119353B2 (fr)
EP (1) EP1576677B1 (fr)
JP (1) JP2006511972A (fr)
KR (1) KR20050093782A (fr)
AT (1) ATE490562T1 (fr)
AU (1) AU2003283730A1 (fr)
DE (1) DE60335208D1 (fr)
TW (1) TW200425555A (fr)
WO (1) WO2004057618A2 (fr)

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US7893419B2 (en) 2003-08-04 2011-02-22 Intel Corporation Processing phase change material to improve programming speed
DE10349750A1 (de) * 2003-10-23 2005-05-25 Commissariat à l'Energie Atomique Phasenwechselspeicher, Phasenwechselspeicheranordnung, Phasenwechselspeicherzelle, 2D-Phasenwechselspeicherzellen-Array, 3D-Phasenwechselspeicherzellen-Array und Elektronikbaustein
US7858980B2 (en) * 2004-03-01 2010-12-28 Taiwan Semiconductor Manufacturing Co., Ltd. Reduced active area in a phase change memory structure
WO2006035325A1 (fr) * 2004-09-27 2006-04-06 Koninklijke Philips Electronics N.V. Dispositif electrique a nanofils comprenant une matiere a changement de phase
US8335103B2 (en) 2004-09-30 2012-12-18 Nxp B.V. Integrated circuit with memory cells comprising a programmable resistor and method for addressing memory cells comprising a programmable resistor
DE602005021527D1 (de) 2004-10-21 2010-07-08 Nxp Bv Integrierte schaltung mit phasenänderungs-speicherzellen und verfahren zum adressieren von phasenänderungs-speicherzellen
JP4664688B2 (ja) * 2005-01-14 2011-04-06 東芝メモリシステムズ株式会社 工業製品の製造方法
JP2008529269A (ja) * 2005-01-25 2008-07-31 エヌエックスピー ビー ヴィ バックエンドプロセスを使用する相変化抵抗体の製造
JP2006303294A (ja) * 2005-04-22 2006-11-02 Renesas Technology Corp 相変化型不揮発性メモリ及びその製造方法
JP4889960B2 (ja) * 2005-04-26 2012-03-07 株式会社半導体エネルギー研究所 半導体装置
JP2006351992A (ja) * 2005-06-20 2006-12-28 Renesas Technology Corp 半導体記憶装置及びその製造方法
US7541607B2 (en) * 2005-11-02 2009-06-02 Elpida Memory, Inc. Electrically rewritable non-volatile memory element and method of manufacturing the same
KR100655082B1 (ko) * 2005-12-23 2006-12-08 삼성전자주식회사 상변화 메모리 소자 및 그 제조방법
US7339230B2 (en) * 2006-01-09 2008-03-04 International Business Machines Corporation Structure and method for making high density mosfet circuits with different height contact lines
TW200805643A (en) 2006-03-24 2008-01-16 Koninkl Philips Electronics Nv Electric device with phase change resistor
US7646006B2 (en) 2006-03-30 2010-01-12 International Business Machines Corporation Three-terminal cascade switch for controlling static power consumption in integrated circuits
US7545667B2 (en) * 2006-03-30 2009-06-09 International Business Machines Corporation Programmable via structure for three dimensional integration technology
US7767994B2 (en) * 2006-12-05 2010-08-03 Electronics And Telecommunications Research Institute Phase-change random access memory device and method of manufacturing the same
JP5127920B2 (ja) * 2007-06-20 2013-01-23 台湾積體電路製造股▲ふん▼有限公司 電子装置及び電子装置の製造方法
WO2009001262A1 (fr) 2007-06-28 2008-12-31 Nxp B.V. Dispositif électrique comprenant un matériau à changement de phase et un élément chauffant
JP2009010264A (ja) * 2007-06-29 2009-01-15 Toshiba Corp 抵抗変化メモリ装置及び集積回路装置
US7678606B2 (en) 2007-09-04 2010-03-16 Industrial Technology Research Institute Phase change memory device and fabrication method thereof
JP5334995B2 (ja) 2008-01-16 2013-11-06 エヌエックスピー ビー ヴィ 相変化材料層を有する多層構造およびその製造方法
US8426838B2 (en) 2008-01-25 2013-04-23 Higgs Opl. Capital Llc Phase-change memory
TW200943595A (en) 2008-04-03 2009-10-16 Ind Tech Res Inst Phase change memory and method for fabricating the same
US8604457B2 (en) * 2008-11-12 2013-12-10 Higgs Opl. Capital Llc Phase-change memory element
KR100993052B1 (ko) 2009-03-05 2010-11-08 광주과학기술원 3차원 구조를 갖는 저항 변화 메모리 소자, 저항 변화 메모리 소자 어레이, 전자제품 및 상기 소자 제조방법
US8470635B2 (en) 2009-11-30 2013-06-25 Micron Technology, Inc. Keyhole-free sloped heater for phase change memory
US9293197B2 (en) 2011-08-15 2016-03-22 Lockheed Martin Corporation Reconfigurable phase change material masks for electro-optical compressive sensing
US8637847B2 (en) 2011-12-09 2014-01-28 Micron Technology, Inc. Memory cells having a plurality of heaters
US9340446B1 (en) 2013-02-04 2016-05-17 Lockheed Martin Corporation Optical apparatus and method of forming a gradient index device
US10437083B1 (en) 2014-10-20 2019-10-08 Lockheed Martin Corporation Individually addressable infrared mask array
US9969647B2 (en) 2016-05-17 2018-05-15 Lockheed Martin Energy, Llc Glass composites having a gradient index of refraction and methods for production thereof
US9908808B1 (en) 2016-08-18 2018-03-06 Lockheed Martin Corporation Ternary glass materials with low refractive index variability
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FR3115932A1 (fr) 2020-10-29 2022-05-06 Stmicroelectronics (Crolles 2) Sas Mémoire à changement de phase
CN114430006B (zh) 2020-10-29 2025-09-23 意法半导体(克洛尔2)公司 相变存储器

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US6507061B1 (en) * 2001-08-31 2003-01-14 Intel Corporation Multiple layer phase-change memory
US6545287B2 (en) * 2001-09-07 2003-04-08 Intel Corporation Using selective deposition to form phase-change memory cells
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Also Published As

Publication number Publication date
DE60335208D1 (de) 2011-01-13
US20060017076A1 (en) 2006-01-26
KR20050093782A (ko) 2005-09-23
EP1576677B1 (fr) 2010-12-01
ATE490562T1 (de) 2010-12-15
JP2006511972A (ja) 2006-04-06
WO2004057618A3 (fr) 2004-11-11
US7119353B2 (en) 2006-10-10
EP1576677A2 (fr) 2005-09-21
AU2003283730A1 (en) 2004-07-14
AU2003283730A8 (en) 2004-07-14
WO2004057618A2 (fr) 2004-07-08

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