TW200501405A - Solid-state imaging apparatus and method for producing the same - Google Patents

Solid-state imaging apparatus and method for producing the same

Info

Publication number
TW200501405A
TW200501405A TW093106017A TW93106017A TW200501405A TW 200501405 A TW200501405 A TW 200501405A TW 093106017 A TW093106017 A TW 093106017A TW 93106017 A TW93106017 A TW 93106017A TW 200501405 A TW200501405 A TW 200501405A
Authority
TW
Taiwan
Prior art keywords
diffusion layer
signal charge
floating diffusion
solid
imaging apparatus
Prior art date
Application number
TW093106017A
Other languages
English (en)
Inventor
Mikiya Uchida
Yoshiyuki Matsunaga
Makoto Inagaki
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of TW200501405A publication Critical patent/TW200501405A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F11/00—Treatment of sludge; Devices therefor
    • C02F11/12—Treatment of sludge; Devices therefor by de-watering, drying or thickening
    • C02F11/121—Treatment of sludge; Devices therefor by de-watering, drying or thickening by mechanical de-watering
    • C02F11/125—Treatment of sludge; Devices therefor by de-watering, drying or thickening by mechanical de-watering using screw filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2103/00—Nature of the water, waste water, sewage or sludge to be treated
    • C02F2103/007—Contaminated open waterways, rivers, lakes or ponds

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Hydrology & Water Resources (AREA)
  • Environmental & Geological Engineering (AREA)
  • Water Supply & Treatment (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW093106017A 2003-03-31 2004-03-08 Solid-state imaging apparatus and method for producing the same TW200501405A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003096245A JP2004304012A (ja) 2003-03-31 2003-03-31 固体撮像装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW200501405A true TW200501405A (en) 2005-01-01

Family

ID=32959543

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093106017A TW200501405A (en) 2003-03-31 2004-03-08 Solid-state imaging apparatus and method for producing the same

Country Status (7)

Country Link
US (3) US7214976B2 (zh)
EP (2) EP1471579B1 (zh)
JP (1) JP2004304012A (zh)
KR (1) KR100604390B1 (zh)
CN (1) CN100490164C (zh)
DE (1) DE602004016790D1 (zh)
TW (1) TW200501405A (zh)

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* Cited by examiner, † Cited by third party
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JP2004304012A (ja) * 2003-03-31 2004-10-28 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP4578792B2 (ja) * 2003-09-26 2010-11-10 富士通セミコンダクター株式会社 固体撮像装置
TWI229409B (en) * 2004-04-26 2005-03-11 Sunplus Technology Co Ltd Circuit layout and semiconductor substrate for photo-sensitive chip
KR100570819B1 (ko) * 2004-07-07 2006-04-12 삼성전자주식회사 전송 게이트 전극들에 중첩하면서 자기정렬된 포토다이오드들을 갖는 이미지 센서의 화소들을 제조하는방법들 및 그에 의해 제조된 이미지 센서의 화소들
US7916186B2 (en) 2005-04-07 2011-03-29 Micron Technology, Inc. Anti-eclipse circuitry with tracking of floating diffusion reset level
KR100782463B1 (ko) 2005-04-13 2007-12-05 (주)실리콘화일 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법
KR100660549B1 (ko) * 2005-07-13 2006-12-22 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP5110831B2 (ja) * 2006-08-31 2012-12-26 キヤノン株式会社 光電変換装置及び撮像システム
JP2008198976A (ja) * 2007-01-19 2008-08-28 Matsushita Electric Ind Co Ltd 固体撮像装置とその製造方法
JP4793402B2 (ja) * 2008-04-21 2011-10-12 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP2010212536A (ja) * 2009-03-12 2010-09-24 Sony Corp 固体撮像装置の製造方法
JP5489528B2 (ja) 2009-05-12 2014-05-14 キヤノン株式会社 光電変換装置の製造方法
JP5422455B2 (ja) * 2010-03-23 2014-02-19 パナソニック株式会社 固体撮像装置
JP2012146989A (ja) * 2012-02-20 2012-08-02 Canon Inc 光電変換装置及び撮像システム
WO2014002365A1 (ja) * 2012-06-26 2014-01-03 パナソニック株式会社 固体撮像装置及びその製造方法
CN103259983B (zh) * 2013-03-13 2017-02-08 上海奕瑞光电子科技有限公司 一种平板图像传感器
WO2018143306A1 (ja) * 2017-01-31 2018-08-09 株式会社ニコン 撮像素子および電子カメラ

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Publication number Priority date Publication date Assignee Title
JP2832136B2 (ja) 1992-12-28 1998-12-02 シャープ株式会社 固体撮像装置及びその製造方法
US5625210A (en) 1995-04-13 1997-04-29 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
JPH09162392A (ja) * 1995-12-06 1997-06-20 Toshiba Corp 半導体装置
US6037577A (en) 1997-03-11 2000-03-14 Kabushiki Kaisha Toshiba Amplifying solid-state image pickup device and operating method of the same
JPH10257389A (ja) * 1997-03-11 1998-09-25 Toshiba Corp 増幅型固体撮像装置及びその動作方法
JPH11345969A (ja) * 1998-06-01 1999-12-14 Toshiba Corp 電力用半導体装置
US6740915B1 (en) * 1998-11-12 2004-05-25 Micron Technology, Inc. CMOS imager cell having a buried contact
US6639261B2 (en) * 1998-12-08 2003-10-28 Micron Technology, Inc. Method for forming a low leakage contact in a CMOS imager
US6091093A (en) * 1999-06-01 2000-07-18 Intel Corporation Photodiode having transparent insulating film around gate islands above p-n junction
JP3624140B2 (ja) * 1999-08-05 2005-03-02 キヤノン株式会社 光電変換装置およびその製造方法、デジタルスチルカメラ又はデジタルビデオカメラ
US6333205B1 (en) * 1999-08-16 2001-12-25 Micron Technology, Inc. CMOS imager with selectively silicided gates
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JP2002190586A (ja) * 2000-12-22 2002-07-05 Mitsubishi Electric Corp 固体撮像装置およびその製造方法
US6504195B2 (en) * 2000-12-29 2003-01-07 Eastman Kodak Company Alternate method for photodiode formation in CMOS image sensors
JP2002270808A (ja) * 2001-03-13 2002-09-20 Matsushita Electric Ind Co Ltd Ｍｏｓ型撮像装置
US6608338B2 (en) * 2001-08-30 2003-08-19 Micron Technology, Inc. CMOS imager and method of formation
US6504196B1 (en) * 2001-08-30 2003-01-07 Micron Technology, Inc. CMOS imager and method of formation
IL156497A (en) * 2002-06-20 2007-08-19 Samsung Electronics Co Ltd Image sensor and method of fabricating the same
KR100508086B1 (ko) * 2002-09-11 2005-08-17 삼성전자주식회사 씨모스 이미지 센서 및 그 제조방법
KR100479208B1 (ko) * 2002-10-23 2005-03-28 매그나칩 반도체 유한회사 살리사이드 공정을 이용한 이미지센서의 제조 방법
JP2004304012A (ja) * 2003-03-31 2004-10-28 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
US6897504B2 (en) * 2003-03-31 2005-05-24 Taiwan Semiconductor Manufacturing Salicided MOS device and one-sided salicided MOS device, and simultaneous fabrication method thereof
KR100984913B1 (ko) * 2003-04-29 2010-10-04 크로스텍 캐피탈, 엘엘씨 씨모스 이미지센서의 제조방법

Also Published As

Publication number Publication date
DE602004016790D1 (de) 2008-11-13
EP1471579A2 (en) 2004-10-27
US7928485B2 (en) 2011-04-19
US20040188729A1 (en) 2004-09-30
EP1471579A3 (en) 2006-05-17
CN1534793A (zh) 2004-10-06
EP1840969A1 (en) 2007-10-03
EP1840969B1 (en) 2011-07-27
US7214976B2 (en) 2007-05-08
EP1471579B1 (en) 2008-10-01
US7459335B2 (en) 2008-12-02
US20070184570A1 (en) 2007-08-09
KR20040086763A (ko) 2004-10-12
CN100490164C (zh) 2009-05-20
JP2004304012A (ja) 2004-10-28
US20090072125A1 (en) 2009-03-19
KR100604390B1 (ko) 2006-07-25

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