TW200715519A - Inter-chip ESD protection structure for high speed and high and frequency devices - Google Patents

Inter-chip ESD protection structure for high speed and high and frequency devices

Info

Publication number
TW200715519A
TW200715519A TW095128156A TW95128156A TW200715519A TW 200715519 A TW200715519 A TW 200715519A TW 095128156 A TW095128156 A TW 095128156A TW 95128156 A TW95128156 A TW 95128156A TW 200715519 A TW200715519 A TW 200715519A
Authority
TW
Taiwan
Prior art keywords
inter
chip
frequency devices
high speed
esd protection
Prior art date
Application number
TW095128156A
Other languages
English (en)
Inventor
Steven H Voldman
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200715519A publication Critical patent/TW200715519A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/922—Bond pads being integral with underlying chip-level interconnections
    • H10W72/9226—Bond pads being integral with underlying chip-level interconnections with via interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/293—Configurations of stacked chips characterised by non-galvanic coupling between the chips, e.g. capacitive coupling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips

Landscapes

  • Semiconductor Integrated Circuits (AREA)
TW095128156A 2005-08-02 2006-08-01 Inter-chip ESD protection structure for high speed and high and frequency devices TW200715519A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/161,414 US7535105B2 (en) 2005-08-02 2005-08-02 Inter-chip ESD protection structure for high speed and high frequency devices

Publications (1)

Publication Number Publication Date
TW200715519A true TW200715519A (en) 2007-04-16

Family

ID=37700270

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095128156A TW200715519A (en) 2005-08-02 2006-08-01 Inter-chip ESD protection structure for high speed and high and frequency devices

Country Status (4)

Country Link
US (1) US7535105B2 (zh)
JP (1) JP5063052B2 (zh)
CN (1) CN100536129C (zh)
TW (1) TW200715519A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI392400B (zh) * 2009-12-18 2013-04-01 Au Optronics Corp 靜電放電防護結構及使用其之顯示裝置

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4263953B2 (ja) * 2003-06-23 2009-05-13 三洋電機株式会社 半導体装置及びその製造方法
US7999383B2 (en) * 2006-07-21 2011-08-16 Bae Systems Information And Electronic Systems Integration Inc. High speed, high density, low power die interconnect system
US7719073B2 (en) * 2007-01-11 2010-05-18 Hewlett-Packard Development Company, L.P. Capacitively coupling layers of a multilayer device
US20080174927A1 (en) * 2007-01-22 2008-07-24 Taiwan Semiconductor Manufacturing Co., Ltd. Esd protection scheme for semiconductor devices having dummy pads
US8456783B2 (en) * 2007-04-27 2013-06-04 Freescale Semiconductor, Inc. Integrated circuit, electronic device and ESD protection therefor
JP5149554B2 (ja) * 2007-07-17 2013-02-20 株式会社日立製作所 半導体装置
JP4458307B2 (ja) * 2008-01-28 2010-04-28 株式会社村田製作所 半導体集積回路装置、半導体集積回路装置の実装構造および半導体集積回路装置の製造方法
US8907887B2 (en) 2008-05-19 2014-12-09 Honeywell International Inc. Methods and systems for operating avionic systems based on user gestures
US7759243B2 (en) * 2008-06-23 2010-07-20 International Business Machines Corporation Method for forming an on-chip high frequency electro-static discharge device
US8279572B2 (en) * 2008-06-23 2012-10-02 International Business Machines Corporation Structure for an on-chip high frequency electro-static discharge device
US7768762B2 (en) * 2008-06-23 2010-08-03 International Business Machines Corporation Design structure for an on-chip high frequency electro-static discharge device
US7915158B2 (en) * 2008-06-23 2011-03-29 International Business Machines Corporation Method for forming an on-chip high frequency electro-static discharge device
US9225481B2 (en) * 2008-08-11 2015-12-29 Qualcomm Incorporated Downlink grants in a multicarrier wireless communication system
US8670376B2 (en) 2008-08-12 2014-03-11 Qualcomm Incorporated Multi-carrier grant design
US9818680B2 (en) 2011-07-27 2017-11-14 Broadpak Corporation Scalable semiconductor interposer integration
US8014166B2 (en) 2008-09-06 2011-09-06 Broadpak Corporation Stacking integrated circuits containing serializer and deserializer blocks using through silicon via
US9893004B2 (en) * 2011-07-27 2018-02-13 Broadpak Corporation Semiconductor interposer integration
US10026720B2 (en) 2015-05-20 2018-07-17 Broadpak Corporation Semiconductor structure and a method of making thereof
US8080862B2 (en) * 2008-09-09 2011-12-20 Qualcomm Incorporate Systems and methods for enabling ESD protection on 3-D stacked devices
US8665570B2 (en) 2009-03-13 2014-03-04 Qualcomm Incorporated Diode having a pocket implant blocked and circuits and methods employing same
US8531805B2 (en) * 2009-03-13 2013-09-10 Qualcomm Incorporated Gated diode having at least one lightly-doped drain (LDD) implant blocked and circuits and methods employing same
JP5641701B2 (ja) * 2009-03-25 2014-12-17 株式会社東芝 三次元半導体集積回路
US8232625B2 (en) * 2009-03-26 2012-07-31 International Business Machines Corporation ESD network circuit with a through wafer via structure and a method of manufacture
US8198736B2 (en) 2009-04-09 2012-06-12 Qualcomm Incorporated Reduced susceptibility to electrostatic discharge during 3D semiconductor device bonding and assembly
US8098079B2 (en) * 2009-04-17 2012-01-17 Oracle America, Inc. Receive circuit for connectors with variable complex impedance
JP5169985B2 (ja) * 2009-05-12 2013-03-27 富士ゼロックス株式会社 半導体装置
WO2010138480A2 (en) 2009-05-26 2010-12-02 Rambus Inc. Stacked semiconductor device assembly
US8054597B2 (en) * 2009-06-23 2011-11-08 International Business Machines Corporation Electrostatic discharge structures and methods of manufacture
US8053898B2 (en) * 2009-10-05 2011-11-08 Samsung Electronics Co., Ltd. Connection for off-chip electrostatic discharge protection
US20120091575A1 (en) * 2010-10-15 2012-04-19 Yi-Shao Lai Semiconductor Package And Method For Making The Same
CN102623439B (zh) * 2011-01-28 2015-09-09 精材科技股份有限公司 电容耦合器封装结构
US8704384B2 (en) 2012-02-17 2014-04-22 Xilinx, Inc. Stacked die assembly
US8704364B2 (en) * 2012-02-08 2014-04-22 Xilinx, Inc. Reducing stress in multi-die integrated circuit structures
US8957512B2 (en) 2012-06-19 2015-02-17 Xilinx, Inc. Oversized interposer
US8869088B1 (en) 2012-06-27 2014-10-21 Xilinx, Inc. Oversized interposer formed from a multi-pattern region mask
US9026872B2 (en) 2012-08-16 2015-05-05 Xilinx, Inc. Flexible sized die for use in multi-die integrated circuit
CN103021893B (zh) * 2012-12-30 2015-06-03 深圳中科系统集成技术有限公司 多路静电释放保护器件的加工方法
TWI493666B (zh) * 2013-01-25 2015-07-21 義守大學 晶片間信號傳輸系統及晶片間電容耦合傳輸電路
US20140264938A1 (en) * 2013-03-14 2014-09-18 Douglas R. Hackler, Sr. Flexible Interconnect
JPWO2014184988A1 (ja) * 2013-05-16 2017-02-23 パナソニックＩｐマネジメント株式会社 半導体装置及びその製造方法
JPWO2014196105A1 (ja) 2013-06-03 2017-02-23 パナソニックＩｐマネジメント株式会社 半導体装置及びその製造方法
US9547034B2 (en) 2013-07-03 2017-01-17 Xilinx, Inc. Monolithic integrated circuit die having modular die regions stitched together
JP6212720B2 (ja) * 2013-09-20 2017-10-18 パナソニックＩｐマネジメント株式会社 半導体装置及びその製造方法
US9915869B1 (en) 2014-07-01 2018-03-13 Xilinx, Inc. Single mask set used for interposer fabrication of multiple products
US9431354B2 (en) 2014-11-06 2016-08-30 International Business Machines Corporation Activating reactions in integrated circuits through electrical discharge
CN104600687B (zh) * 2015-01-06 2018-03-30 武汉新芯集成电路制造有限公司 三维集成电路的静电保护电路
US10032751B2 (en) * 2015-09-28 2018-07-24 Invensas Corporation Ultrathin layer for forming a capacitive interface between joined integrated circuit components
US10811388B2 (en) 2015-09-28 2020-10-20 Invensas Corporation Capacitive coupling in a direct-bonded interface for microelectronic devices
US10411006B2 (en) * 2016-05-09 2019-09-10 Infineon Technologies Ag Poly silicon based interface protection
US9859227B1 (en) 2016-06-30 2018-01-02 International Business Machines Corporation Damaging integrated circuit components
US10530150B2 (en) 2017-01-24 2020-01-07 International Business Machines Corporation Air gap metal tip electrostatic discharge protection
DE102018124695A1 (de) * 2017-11-15 2019-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Integrieren von Passivvorrichtungen in Package-Strukturen
WO2020097859A1 (zh) * 2018-11-15 2020-05-22 华为技术有限公司 一种集成电路
WO2020117336A1 (en) * 2018-12-06 2020-06-11 Invensas Corporation Capacitive coupling in a direct-bonded interface for microelectronic devices
US11616048B2 (en) * 2019-06-12 2023-03-28 Texas Instruments Incorporated IC package with multiple dies
CN112510030B (zh) * 2020-12-01 2024-06-28 西安紫光国芯半导体有限公司 芯片、三维芯片、电子设备及三维芯片的制造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6220362A (ja) * 1985-07-19 1987-01-28 Hitachi Ltd 積層電気回路用信号伝送回路
JPH07112041B2 (ja) * 1986-12-03 1995-11-29 シャープ株式会社 半導体装置の製造方法
US5466892A (en) * 1993-02-03 1995-11-14 Zycon Corporation Circuit boards including capacitive coupling for signal transmission and methods of use and manufacture
US6728113B1 (en) * 1993-06-24 2004-04-27 Polychip, Inc. Method and apparatus for non-conductively interconnecting integrated circuits
MY114888A (en) * 1994-08-22 2003-02-28 Ibm Method for forming a monolithic electronic module by stacking planar arrays of integrated circuit chips
TW289153B (zh) * 1994-09-26 1996-10-21 Ibm
US5466634A (en) * 1994-12-20 1995-11-14 International Business Machines Corporation Electronic modules with interconnected surface metallization layers and fabrication methods therefore
US5731945A (en) * 1995-02-22 1998-03-24 International Business Machines Corporation Multichip semiconductor structures with consolidated circuitry and programmable ESD protection for input/output nodes
US5703747A (en) * 1995-02-22 1997-12-30 Voldman; Steven Howard Multichip semiconductor structures with interchip electrostatic discharge protection, and fabrication methods therefore
US5712747A (en) * 1996-01-24 1998-01-27 International Business Machines Corporation Thin film slider with on-board multi-layer integrated circuit
US20030067726A1 (en) * 2000-05-01 2003-04-10 Voldman Steven H. Method and apparatus for providing ESD protection for receiver networks
US6429045B1 (en) * 2001-02-07 2002-08-06 International Business Machines Corporation Structure and process for multi-chip chip attach with reduced risk of electrostatic discharge damage
US7067914B2 (en) * 2001-11-09 2006-06-27 International Business Machines Corporation Dual chip stack method for electro-static discharge protection of integrated circuits
US6885090B2 (en) * 2001-11-28 2005-04-26 North Carolina State University Inductively coupled electrical connectors
JP2007066922A (ja) * 2003-11-28 2007-03-15 Renesas Technology Corp 半導体集積回路装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI392400B (zh) * 2009-12-18 2013-04-01 Au Optronics Corp 靜電放電防護結構及使用其之顯示裝置

Also Published As

Publication number Publication date
JP5063052B2 (ja) 2012-10-31
CN1909230A (zh) 2007-02-07
US20070029646A1 (en) 2007-02-08
US7535105B2 (en) 2009-05-19
CN100536129C (zh) 2009-09-02
JP2007043172A (ja) 2007-02-15

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