TW200717685A - Fitting structure of mounting stand device, treatment device, and method for preventing discharge between feeder in mounting stand device - Google Patents

Fitting structure of mounting stand device, treatment device, and method for preventing discharge between feeder in mounting stand device

Info

Publication number
TW200717685A
TW200717685A TW095122473A TW95122473A TW200717685A TW 200717685 A TW200717685 A TW 200717685A TW 095122473 A TW095122473 A TW 095122473A TW 95122473 A TW95122473 A TW 95122473A TW 200717685 A TW200717685 A TW 200717685A
Authority
TW
Taiwan
Prior art keywords
mounting stand
leg part
stand device
discharge
stand
Prior art date
Application number
TW095122473A
Other languages
Chinese (zh)
Other versions
TWI404157B (en
Inventor
Susumu Katoh
Tomohito Komatsu
Takashi Mochizuki
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200717685A publication Critical patent/TW200717685A/en
Application granted granted Critical
Publication of TWI404157B publication Critical patent/TWI404157B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Furnace Charging Or Discharging (AREA)
  • Furnace Details (AREA)

Abstract

To provide a mounting stand device where the inside of a hollow leg part is held to a pressure atmosphere in which discharge is not generated, and discharge between feeders can be prevented. In the fitting structure, a mounting stand device 36 comprising: a mounting stand 38 provided with a heating means 42; a hollow leg part 40 supporting the same; and feeders 44A, 44B or the like connected to the heating means is fitted into a treatment vessel 4 capable of evacuation. The opening part formed at the bottom part of the treatment vessel is equipped with: a bottom part fitting stand 56 provided so as to close the opening part; a metal seal member 74 of a soft metallic material interposed between the lower end part of the leg part and the bottom part fitting stand; a fixing means 72 of fixing the lower end part of the leg part to the side of the bottom part fixing stand; an inert gas feeding means 84 of feeding inert gas into the leg part and forming a pressure atmosphere with which discharge is not generated between the feeders; and a means 86 of exhausting the atmosphere in the leg part for exhausting the atmosphere in the leg part as the flow rate thereof is limited.
TW095122473A 2005-06-23 2006-06-22 Mounting method of the mounting apparatus, a discharge prevention method between the processing apparatus and the power supply line of the stage apparatus TWI404157B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005183768A JP4736564B2 (en) 2005-06-23 2005-06-23 Mounting structure and processing device of mounting table device

Publications (2)

Publication Number Publication Date
TW200717685A true TW200717685A (en) 2007-05-01
TWI404157B TWI404157B (en) 2013-08-01

Family

ID=37583583

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095122473A TWI404157B (en) 2005-06-23 2006-06-22 Mounting method of the mounting apparatus, a discharge prevention method between the processing apparatus and the power supply line of the stage apparatus

Country Status (4)

Country Link
JP (1) JP4736564B2 (en)
KR (1) KR100728400B1 (en)
CN (1) CN100440425C (en)
TW (1) TWI404157B (en)

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* Cited by examiner, † Cited by third party
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JP4992630B2 (en) * 2007-09-19 2012-08-08 東京エレクトロン株式会社 Mounting table structure and processing device
JP4288297B1 (en) * 2008-01-09 2009-07-01 三菱重工業株式会社 Pressure control device and pressure control method
JP2011054838A (en) * 2009-09-03 2011-03-17 Tokyo Electron Ltd Placing table structure and processing apparatus
JP5520552B2 (en) * 2009-09-11 2014-06-11 株式会社日立国際電気 Semiconductor device manufacturing method and substrate processing apparatus
JP2011222931A (en) * 2009-12-28 2011-11-04 Tokyo Electron Ltd Mounting table structure and treatment apparatus
JP5903930B2 (en) 2012-02-27 2016-04-13 日新イオン機器株式会社 Substrate transfer apparatus and semiconductor manufacturing apparatus using the substrate transfer apparatus
CN103681182B (en) * 2012-09-05 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 Heater and plasma processing device
JP5944281B2 (en) * 2012-09-10 2016-07-05 光洋サーモシステム株式会社 Heat treatment equipment
CN104746008B (en) * 2013-12-30 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 Go to gas chamber
JP5811513B2 (en) * 2014-03-27 2015-11-11 Toto株式会社 Electrostatic chuck
ITUA20161980A1 (en) * 2016-03-24 2017-09-24 Lpe Spa SUSCECTOR WITH DETACHED SUBSTRATE WITH DEPRESSION AND REACTOR FOR EPITAXIAL DEPOSITION
JP6592394B2 (en) * 2016-04-21 2019-10-16 東京エレクトロン株式会社 Maintenance method of plasma processing apparatus
US20180046206A1 (en) * 2016-08-13 2018-02-15 Applied Materials, Inc. Method and apparatus for controlling gas flow to a process chamber
JP6866255B2 (en) * 2017-08-09 2021-04-28 東京エレクトロン株式会社 Plasma processing equipment
CN108048811B (en) * 2017-11-22 2019-09-06 西南电子技术研究所（中国电子科技集团公司第十研究所） Magnetron sputter magnetron sputtering inlet seal flange
KR102498911B1 (en) * 2018-04-11 2023-02-10 주식회사 디엠에스 Apparatus for substrate process
CN109943826A (en) * 2018-09-11 2019-06-28 东南大学 A kind of multifunctional composite deposition equipment and its preparation process
JP2021007133A (en) 2019-06-28 2021-01-21 東京エレクトロン株式会社 Heating equipment, heating method, and substrate processing equipment
CN111968901B (en) * 2020-08-25 2022-08-16 北京北方华创微电子装备有限公司 Semiconductor reaction chamber and semiconductor processing equipment
US20230113486A1 (en) * 2021-10-12 2023-04-13 Applied Materials, Inc. Substrate support assemblies having internal shaft areas with isolated environments that mitigate oxidation
KR102906571B1 (en) * 2024-05-28 2025-12-31 세메스 주식회사 Apparatus for treating substrate

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JPH02242599A (en) * 1989-03-15 1990-09-26 Fujitsu Ltd Radiant light take-out window unit of electron stored ring
JPH078135B2 (en) * 1989-10-13 1995-01-30 三菱電機株式会社 Parallel operating device for switching power supply
JPH03128668U (en) * 1990-04-06 1991-12-25
JP3204544B2 (en) * 1992-07-09 2001-09-04 東京エレクトロン株式会社 Processing equipment
US6161499A (en) 1997-07-07 2000-12-19 Cvd Diamond Corporation Apparatus and method for nucleation and deposition of diamond using hot-filament DC plasma
KR100319494B1 (en) * 1999-07-15 2002-01-09 김용일 Apparatus for Deposition of thin films on wafers through atomic layer epitaxial process
WO2002049755A1 (en) * 2000-12-08 2002-06-27 Tokyo Electron Limited Method and system for removal of gas, and plasma processing device
JP4009100B2 (en) * 2000-12-28 2007-11-14 東京エレクトロン株式会社 Substrate heating apparatus and substrate heating method
JP4137419B2 (en) * 2001-09-28 2008-08-20 東京エレクトロン株式会社 Plasma processing equipment
JP4348094B2 (en) 2002-03-13 2009-10-21 住友電気工業株式会社 Holder for semiconductor manufacturing equipment
JP2004091849A (en) * 2002-08-30 2004-03-25 Tokyo Electron Ltd Processing equipment
KR20040022580A (en) * 2002-09-09 2004-03-16 주성엔지니어링(주) Susceptor
KR20060023363A (en) * 2004-09-09 2006-03-14 삼성전자주식회사 Semiconductor manufacturing equipment

Also Published As

Publication number Publication date
JP4736564B2 (en) 2011-07-27
KR20060134860A (en) 2006-12-28
KR100728400B1 (en) 2007-06-13
CN1885490A (en) 2006-12-27
JP2007002298A (en) 2007-01-11
CN100440425C (en) 2008-12-03
TWI404157B (en) 2013-08-01

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