TW200736372A - Chemical mechanical polishing composition - Google Patents
Chemical mechanical polishing compositionInfo
- Publication number
- TW200736372A TW200736372A TW095108960A TW95108960A TW200736372A TW 200736372 A TW200736372 A TW 200736372A TW 095108960 A TW095108960 A TW 095108960A TW 95108960 A TW95108960 A TW 95108960A TW 200736372 A TW200736372 A TW 200736372A
- Authority
- TW
- Taiwan
- Prior art keywords
- metal
- chemical mechanical
- mechanical polishing
- polishing composition
- group
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
- C01G25/02—Oxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Geology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
A chemical mechanical polishing composition has a pH value between 2 and 5 and comprises a mixture having the following components : an aqueous medium, abrasive particles, a corrosion inhibitor, a surfactant, diacid compound and a metal residual inhibitor. Said metal residual inhibitor is selected from the group consisting of the compounds represented by the following formulae: (I), (II), (III), (IV), (V) and the combination thereof, wherein the structures and the definitions of each subsisting group of the formulae (II)~(V) are defined as set forth in the specification and claims. The chemical mechanical polishing composition of the present invention was used for polishing the surfaces of the semiconductor wafers in order to obtain the better polishing rate of metal, efficiently reduce the dishing of metal and the metal residues in the surfaces of the wafers.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095108960A TWI305802B (en) | 2006-03-16 | 2006-03-16 | Chemical mechanical polishing composition |
| KR1020070025038A KR100851615B1 (en) | 2006-03-16 | 2007-03-14 | Chemical mechanical polishing composition |
| JP2007067443A JP2007251175A (en) | 2006-03-16 | 2007-03-15 | Chemical mechanical polishing composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095108960A TWI305802B (en) | 2006-03-16 | 2006-03-16 | Chemical mechanical polishing composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200736372A true TW200736372A (en) | 2007-10-01 |
| TWI305802B TWI305802B (en) | 2009-02-01 |
Family
ID=38595064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095108960A TWI305802B (en) | 2006-03-16 | 2006-03-16 | Chemical mechanical polishing composition |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2007251175A (en) |
| KR (1) | KR100851615B1 (en) |
| TW (1) | TWI305802B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2912537C (en) * | 2013-05-14 | 2018-12-11 | Prc-Desoto International, Inc. | Permanganate based conversion coating compositions |
| JP7682193B2 (en) * | 2020-02-13 | 2025-05-23 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | Polishing composition and method of use thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI314950B (en) * | 2001-10-31 | 2009-09-21 | Hitachi Chemical Co Ltd | Polishing slurry and polishing method |
-
2006
- 2006-03-16 TW TW095108960A patent/TWI305802B/en active
-
2007
- 2007-03-14 KR KR1020070025038A patent/KR100851615B1/en not_active Expired - Fee Related
- 2007-03-15 JP JP2007067443A patent/JP2007251175A/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007251175A (en) | 2007-09-27 |
| KR20070094489A (en) | 2007-09-20 |
| TWI305802B (en) | 2009-02-01 |
| KR100851615B1 (en) | 2008-08-12 |
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