TW200746231A - Method to produce semiconductor components and thin-film semiconductor components - Google Patents

Method to produce semiconductor components and thin-film semiconductor components

Info

Publication number
TW200746231A
TW200746231A TW095128566A TW95128566A TW200746231A TW 200746231 A TW200746231 A TW 200746231A TW 095128566 A TW095128566 A TW 095128566A TW 95128566 A TW95128566 A TW 95128566A TW 200746231 A TW200746231 A TW 200746231A
Authority
TW
Taiwan
Prior art keywords
semiconductor components
layer
thin
produce
compound
Prior art date
Application number
TW095128566A
Other languages
English (en)
Other versions
TWI319591B (en
Inventor
Siegfried Herrmann
Berthold Hahn
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200746231A publication Critical patent/TW200746231A/zh
Application granted granted Critical
Publication of TWI319591B publication Critical patent/TWI319591B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/582—Recycling of unreacted starting or intermediate materials

Landscapes

  • Led Device Packages (AREA)
  • Laminated Bodies (AREA)
  • Recrystallisation Techniques (AREA)
TW095128566A 2005-08-05 2006-08-04 Method to produce semiconductor components and thin-film semiconductor components TWI319591B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005037023 2005-08-05
DE102005055293A DE102005055293A1 (de) 2005-08-05 2005-11-21 Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip

Publications (2)

Publication Number Publication Date
TW200746231A true TW200746231A (en) 2007-12-16
TWI319591B TWI319591B (en) 2010-01-11

Family

ID=37135458

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095128566A TWI319591B (en) 2005-08-05 2006-08-04 Method to produce semiconductor components and thin-film semiconductor components

Country Status (8)

Country Link
US (1) US8058147B2 (zh)
EP (1) EP1911104B1 (zh)
JP (1) JP5361381B2 (zh)
KR (1) KR101330455B1 (zh)
CN (1) CN101238593B (zh)
DE (1) DE102005055293A1 (zh)
TW (1) TWI319591B (zh)
WO (1) WO2007016908A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8803174B2 (en) 2010-03-05 2014-08-12 Lg Innotek Co., Ltd. Light emitting device, light emitting device package
TWI451598B (zh) * 2010-04-09 2014-09-01 Ｌｇ伊諾特股份有限公司 發光元件及發光元件封裝

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005055293A1 (de) 2005-08-05 2007-02-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip
DE102007004303A1 (de) * 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement und Bauelement-Verbund
DE102007004301A1 (de) * 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements und Dünnfilm-Halbleiterbauelement
DE102007004304A1 (de) 2007-01-29 2008-07-31 Osram Opto Semiconductors Gmbh Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips
DE102007017113A1 (de) 2007-01-31 2008-08-07 Osram Opto Semiconductors Gmbh Halbleiterbauelement mit einer optisch aktiven Schicht, Anordnung mit einer Vielzahl von optisch aktiven Schichten und Verfahren zur Herstellung eines Halbleiterbauelements
DE102007010755A1 (de) 2007-03-06 2008-10-30 Osram Opto Semiconductors Gmbh Anordnung mit einem Halbleiterchip und einer Lichtleiterschicht
DE102007030129A1 (de) 2007-06-29 2009-01-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement
DE102007041896A1 (de) 2007-09-04 2009-03-05 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE102007053286B4 (de) * 2007-09-20 2025-03-27 Osram Oled Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102007051168B4 (de) * 2007-09-26 2026-01-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines LED-Moduls und Modul
DE102007054800B4 (de) 2007-09-28 2024-12-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Lumineszenzdiodenchip mit Lumineszenzkonversionsvorrichtung und Verfahren zum Herstellen von Lumineszenzdiodenchips mit Lumineszenzkonversionsvorrichtung
DE102008005935A1 (de) 2007-11-29 2009-06-04 Osram Opto Semiconductors Gmbh Halbleiteranordnung sowie Verfahren zur Herstellung einer Halbleiteranordnung
DE102008008599A1 (de) * 2007-12-20 2009-06-25 Osram Opto Semiconductors Gmbh Halbleiteranordnung, insbesondere Leuchtdiodenanordnung und Leuchtmittelanordnung
DE102008019612A1 (de) * 2008-04-18 2009-10-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102008025693A1 (de) 2008-05-29 2009-12-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
WO2010016206A1 (ja) 2008-08-04 2010-02-11 パナソニック株式会社 フレキシブル半導体装置の製造方法
KR101028277B1 (ko) 2010-05-25 2011-04-11 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 라이트 유닛
DE102010054068A1 (de) * 2010-12-10 2012-06-14 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements und Bauelement
JP2012191019A (ja) * 2011-03-10 2012-10-04 Shin Etsu Chem Co Ltd 光半導体装置用接着剤シートの製造方法及び光半導体装置用接着剤シート
DE102013210668A1 (de) * 2013-06-07 2014-12-11 Würth Elektronik GmbH & Co. KG Verfahren zur Herstellung eines optischen Moduls
WO2015008243A1 (en) * 2013-07-19 2015-01-22 Koninklijke Philips N.V. Pc led with optical element and without substrate carrier
DE102017112223A1 (de) * 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Halbleiterlaser-Bauteil und Verfahren zur Herstellung eines Halbleiterlaser-Bauteils
US12308337B1 (en) * 2024-09-11 2025-05-20 Diodes Incorporated Power semiconductor apparatus and bonding method thereof

Family Cites Families (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE8711105U1 (de) 1987-08-14 1987-11-26 Siemens AG, 1000 Berlin und 8000 München Leiterplatte für die Elektronik
JP2953468B2 (ja) 1989-06-21 1999-09-27 三菱化学株式会社 化合物半導体装置及びその表面処理加工方法
JPH0992878A (ja) 1995-09-25 1997-04-04 Shin Etsu Handotai Co Ltd 半導体発光素子及びその製造方法
US5779924A (en) 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
KR100481994B1 (ko) 1996-08-27 2005-12-01 세이코 엡슨 가부시키가이샤 박리방법,박막디바이스의전사방법,및그것을이용하여제조되는박막디바이스,박막집적회로장치및액정표시장치
DE19640594B4 (de) 1996-10-01 2016-08-04 Osram Gmbh Bauelement
JP4032443B2 (ja) 1996-10-09 2008-01-16 セイコーエプソン株式会社 薄膜トランジスタ、回路、アクティブマトリクス基板、液晶表示装置
US5833073A (en) 1997-06-02 1998-11-10 Fluoroware, Inc. Tacky film frame for electronic device
US6071795A (en) 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
JP2000049382A (ja) 1998-07-27 2000-02-18 Matsushita Electron Corp 半導体発光装置及びその製造方法
US7253445B2 (en) 1998-07-28 2007-08-07 Paul Heremans High-efficiency radiating device
US6504180B1 (en) 1998-07-28 2003-01-07 Imec Vzw And Vrije Universiteit Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom
EP0977277A1 (en) 1998-07-28 2000-02-02 Interuniversitair Microelektronica Centrum Vzw Devices for emitting radiation with a high efficiency and a method for fabricating such devices
US6876003B1 (en) 1999-04-15 2005-04-05 Sumitomo Electric Industries, Ltd. Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device
JP2001168344A (ja) 1999-12-13 2001-06-22 Sony Corp 薄膜トランジスタ及びその製造方法と加熱装置並びに表示装置
DE10017336C2 (de) 2000-04-07 2002-05-16 Vishay Semiconductor Gmbh verfahren zur Herstellung von strahlungsemittierenden Halbleiter-Wafern
DE10020464A1 (de) 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
DE10051465A1 (de) 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
EP1277240B1 (de) 2000-04-26 2015-05-20 OSRAM Opto Semiconductors GmbH Verfahren zur Herstellung eines lichtmittierenden Halbleiterbauelements
TWI289944B (en) 2000-05-26 2007-11-11 Osram Opto Semiconductors Gmbh Light-emitting-diode-element with a light-emitting-diode-chip
WO2002009192A1 (en) 2000-07-24 2002-01-31 Matsushita Electric Industrial Co., Ltd. Semiconductor device, liquid crystal display device, el display device, semiconductor film producing method, and semiconductor device producing method
DE10040448A1 (de) 2000-08-18 2002-03-07 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zu dessen Herstellung
DE10041328B4 (de) 2000-08-23 2018-04-05 Osram Opto Semiconductors Gmbh Verpackungseinheit für Halbleiterchips
US6562648B1 (en) * 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
US6614103B1 (en) 2000-09-01 2003-09-02 General Electric Company Plastic packaging of LED arrays
DE10051159C2 (de) 2000-10-16 2002-09-19 Osram Opto Semiconductors Gmbh LED-Modul, z.B. Weißlichtquelle
JP4461616B2 (ja) * 2000-12-14 2010-05-12 ソニー株式会社 素子の転写方法、素子保持基板の形成方法、及び素子保持基板
CN1464953A (zh) 2001-08-09 2003-12-31 松下电器产业株式会社 Led照明装置和卡型led照明光源
DE20220258U1 (de) 2002-09-20 2004-02-19 Osram Opto Semiconductors Gmbh Halbleiterchip
TWI226139B (en) 2002-01-31 2005-01-01 Osram Opto Semiconductors Gmbh Method to manufacture a semiconductor-component
DE10303977A1 (de) * 2002-01-31 2003-11-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements
JP2004047975A (ja) * 2002-05-17 2004-02-12 Semiconductor Energy Lab Co Ltd 積層体の転写方法及び半導体装置の作製方法
EP1536487A4 (en) 2002-05-28 2008-02-06 Matsushita Electric Works Ltd ELECTROLUMINESCENT ELEMENT, LIGHT EMITTING DEVICE AND SURFACE EMISSION LIGHTING DEVICE USING THE SAME
JP2003347524A (ja) * 2002-05-28 2003-12-05 Sony Corp 素子の転写方法、素子の配列方法及び画像表示装置の製造方法
JP2004047691A (ja) * 2002-07-11 2004-02-12 Seiko Epson Corp 半導体装置の製造方法、電気光学装置、及び電子機器
WO2004017407A1 (de) 2002-07-31 2004-02-26 Osram Opto Semiconductors Gmbh Oberflächenmontierbares halbleiterbauelement und verfahren zu dessen herstellung
DE10234978A1 (de) 2002-07-31 2004-02-12 Osram Opto Semiconductors Gmbh Oberflächenmontierbares Halbleiterbauelement und Verfahren zu dessen Herstellung
US7078737B2 (en) 2002-09-02 2006-07-18 Matsushita Electric Industrial Co., Ltd. Light-emitting device
TWI313062B (en) * 2002-09-13 2009-08-01 Ind Tech Res Inst Method for producing active plastic panel displayers
DE10245628A1 (de) 2002-09-30 2004-04-15 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung
DE10245631B4 (de) * 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
US20040068572A1 (en) 2002-10-04 2004-04-08 Zhixue Wu Methods and systems for communicating over a client-server network
JP4097510B2 (ja) 2002-11-20 2008-06-11 株式会社沖データ 半導体装置の製造方法
JP4472314B2 (ja) * 2002-11-22 2010-06-02 株式会社半導体エネルギー研究所 半導体装置の作製方法、表示装置の作製方法、および発光装置の作製方法
JP4662918B2 (ja) * 2003-01-31 2011-03-30 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 半導体構成素子の製造のための方法
US6786390B2 (en) 2003-02-04 2004-09-07 United Epitaxy Company Ltd. LED stack manufacturing method and its structure thereof
US6903381B2 (en) * 2003-04-24 2005-06-07 Opto Tech Corporation Light-emitting diode with cavity containing a filler
TWI330413B (en) 2005-01-25 2010-09-11 Epistar Corp A light-emitting device
US20050033638A1 (en) 2003-08-08 2005-02-10 Toni-Diane Donnet System and method for advertising compliance
DE10339985B4 (de) * 2003-08-29 2008-12-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer transparenten Kontaktschicht und Verfahren zu dessen Herstellung
DE10353679A1 (de) 2003-11-17 2005-06-02 Siemens Ag Kostengünstige, miniaturisierte Aufbau- und Verbindungstechnik für LEDs und andere optoelektronische Module
US7341882B2 (en) * 2003-11-18 2008-03-11 Uni Light Technology Inc. Method for forming an opto-electronic device
JP4496774B2 (ja) 2003-12-22 2010-07-07 日亜化学工業株式会社 半導体装置の製造方法
JP4368225B2 (ja) 2004-03-10 2009-11-18 三洋電機株式会社 窒化物系半導体発光素子の製造方法
JP2007531321A (ja) 2004-03-29 2007-11-01 アーティキュレイテッド・テクノロジーズ、エル・エル・シー ロール・ツー・ロールで製作された光学シートおよび封入された半導体回路デバイス
US7427782B2 (en) 2004-03-29 2008-09-23 Articulated Technologies, Llc Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices
EP1735149A2 (de) 2004-04-16 2006-12-27 Lucea AG Lichtemittierendes paneel und optisch wirksame folie
US6956246B1 (en) 2004-06-03 2005-10-18 Lumileds Lighting U.S., Llc Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal
US20050274971A1 (en) 2004-06-10 2005-12-15 Pai-Hsiang Wang Light emitting diode and method of making the same
DE102005013894B4 (de) 2004-06-30 2010-06-17 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung erzeugender Halbleiterchip und Verfahren zu dessen Herstellung
KR101158601B1 (ko) 2004-07-30 2012-06-22 오스람 옵토 세미컨덕터스 게엠베하 박막기술을 사용하여 반도체 칩을 제조하는 방법 및박막기술을 사용하여 제조된 반도체 칩
DE102004036962A1 (de) 2004-07-30 2006-03-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips in Dünnfilmtechnik und Halbleiterchip in Dünnfilmtechnik
KR100616600B1 (ko) 2004-08-24 2006-08-28 삼성전기주식회사 수직구조 질화물 반도체 발광소자
JP4254669B2 (ja) 2004-09-07 2009-04-15 豊田合成株式会社 発光装置
US7476910B2 (en) 2004-09-10 2009-01-13 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing the same
DE102004050371A1 (de) 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer drahtlosen Kontaktierung
US7256483B2 (en) 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
JP4906256B2 (ja) 2004-11-10 2012-03-28 株式会社沖データ 半導体複合装置の製造方法
JP2006147787A (ja) 2004-11-18 2006-06-08 Sony Corp 発光素子及びその製造方法
KR100638666B1 (ko) 2005-01-03 2006-10-30 삼성전기주식회사 질화물 반도체 발광소자
JP5328159B2 (ja) 2005-03-01 2013-10-30 セルカコア・ラボラトリーズ・インコーポレーテッド 多波長センサ発光体
KR101249230B1 (ko) 2005-03-30 2013-04-01 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 플렉시블 ｌｅｄ 어레이
US20060237735A1 (en) 2005-04-22 2006-10-26 Jean-Yves Naulin High-efficiency light extraction structures and methods for solid-state lighting
KR100599012B1 (ko) 2005-06-29 2006-07-12 서울옵토디바이스주식회사 열전도성 기판을 갖는 발광 다이오드 및 그것을 제조하는방법
DE102005055293A1 (de) 2005-08-05 2007-02-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip
DE102007004301A1 (de) 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements und Dünnfilm-Halbleiterbauelement
DE102007004303A1 (de) 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement und Bauelement-Verbund
TW200830593A (en) 2006-11-15 2008-07-16 Univ California Transparent mirrorless light emitting diode
DE102007004304A1 (de) 2007-01-29 2008-07-31 Osram Opto Semiconductors Gmbh Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8803174B2 (en) 2010-03-05 2014-08-12 Lg Innotek Co., Ltd. Light emitting device, light emitting device package
TWI451598B (zh) * 2010-04-09 2014-09-01 Ｌｇ伊諾特股份有限公司 發光元件及發光元件封裝
US8866374B2 (en) 2010-04-09 2014-10-21 Lg Innotek Co., Ltd. Light emitting device having a multilayer re-emission layer and light emitting device package including the same

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EP1911104B1 (de) 2019-05-15
CN101238593A (zh) 2008-08-06
CN101238593B (zh) 2010-05-26
TWI319591B (en) 2010-01-11
JP5361381B2 (ja) 2013-12-04
KR20080035679A (ko) 2008-04-23
US8058147B2 (en) 2011-11-15
US20100133564A1 (en) 2010-06-03
WO2007016908A1 (de) 2007-02-15
DE102005055293A1 (de) 2007-02-15
KR101330455B1 (ko) 2013-11-15
JP2009503878A (ja) 2009-01-29

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