TW200802443A - Electronic component - Google Patents

Electronic component

Info

Publication number
TW200802443A
TW200802443A TW096115033A TW96115033A TW200802443A TW 200802443 A TW200802443 A TW 200802443A TW 096115033 A TW096115033 A TW 096115033A TW 96115033 A TW96115033 A TW 96115033A TW 200802443 A TW200802443 A TW 200802443A
Authority
TW
Taiwan
Prior art keywords
conductor
electronic component
dielectric film
lower conductor
capacitor element
Prior art date
Application number
TW096115033A
Other languages
English (en)
Other versions
TWI430302B (zh
Inventor
Hajime Kuwajima
Original Assignee
Tdk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tdk Corp filed Critical Tdk Corp
Publication of TW200802443A publication Critical patent/TW200802443A/zh
Application granted granted Critical
Publication of TWI430302B publication Critical patent/TWI430302B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H01G4/252—Terminals the terminals being coated on the capacitive element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Ceramic Capacitors (AREA)
TW096115033A 2006-05-01 2007-04-27 Electronic parts, electronic parts manufacturing methods TWI430302B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006127842A JP2007300002A (ja) 2006-05-01 2006-05-01 電子部品

Publications (2)

Publication Number Publication Date
TW200802443A true TW200802443A (en) 2008-01-01
TWI430302B TWI430302B (zh) 2014-03-11

Family

ID=38648065

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096115033A TWI430302B (zh) 2006-05-01 2007-04-27 Electronic parts, electronic parts manufacturing methods

Country Status (4)

Country Link
US (1) US7973246B2 (zh)
JP (1) JP2007300002A (zh)
CN (1) CN101067985B (zh)
TW (1) TWI430302B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11742273B2 (en) 2016-12-21 2023-08-29 Dai Nippon Printing Co., Ltd. Through electrode substrate and semiconductor device

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7416938B2 (en) * 2006-03-31 2008-08-26 Intel Corporation Inkjet patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same
JP5223130B2 (ja) * 2007-02-15 2013-06-26 福井県 熱可塑性樹脂補強シート材及びその製造方法、並びに熱可塑性樹脂多層補強シート材
US8212155B1 (en) * 2007-06-26 2012-07-03 Wright Peter V Integrated passive device
US20090014832A1 (en) * 2007-07-09 2009-01-15 Peter Baumgartner Semiconductor Device with Reduced Capacitance Tolerance Value
KR100867150B1 (ko) * 2007-09-28 2008-11-06 삼성전기주식회사 칩 캐패시터가 내장된 인쇄회로기판 및 칩 캐패시터의 내장방법
US8536676B2 (en) 2007-12-19 2013-09-17 Lockheed Martin Corporation Corona prevention in high power MMICs
CN101632169B (zh) * 2007-12-28 2012-05-23 揖斐电株式会社 中介层以及中介层的制造方法
US8269308B2 (en) * 2008-03-19 2012-09-18 Stats Chippac, Ltd. Semiconductor device with cross-talk isolation using M-cap and method thereof
JP2009246181A (ja) * 2008-03-31 2009-10-22 Tdk Corp 電子部品
US8624328B2 (en) * 2008-11-19 2014-01-07 Renesas Electronics Corporation Semiconductor device
JP5224181B2 (ja) * 2009-03-19 2013-07-03 三菱マテリアル株式会社 可変容量コンデンサ部品
FR2961345A1 (fr) * 2010-06-10 2011-12-16 St Microelectronics Tours Sas Circuit integre passif
CN102403137B (zh) * 2010-09-17 2016-03-23 三菱综合材料株式会社 可变电容器部件
US9557239B2 (en) * 2010-12-03 2017-01-31 Baker Hughes Incorporated Determination of strain components for different deformation modes using a filter
US9103736B2 (en) 2010-12-03 2015-08-11 Baker Hughes Incorporated Modeling an interpretation of real time compaction modeling data from multi-section monitoring system
US9194973B2 (en) 2010-12-03 2015-11-24 Baker Hughes Incorporated Self adaptive two dimensional filter for distributed sensing data
CN102544884B (zh) * 2011-12-23 2015-04-01 富士康(昆山)电脑接插件有限公司 电连接器、电连接器壳体及其表面处理的方法
DE102012223904A1 (de) * 2012-10-05 2014-04-10 Continental Automotive Gmbh Verfahren zum Herstellen eines elektronischen Hochstrom-Schaltkreises mittels Gasspritz-Technologie und Abdichten mit isolierendem Polymer
JP6079279B2 (ja) * 2013-02-05 2017-02-15 三菱電機株式会社 半導体装置、半導体装置の製造方法
JP6547762B2 (ja) * 2015-01-30 2019-07-24 株式会社村田製作所 電子部品の製造方法および電子部品
JP6857329B2 (ja) * 2016-10-24 2021-04-14 大日本印刷株式会社 高周波部品及びその製造方法
JP2018073888A (ja) * 2016-10-25 2018-05-10 大日本印刷株式会社 電子部品およびその製造方法
US10461696B2 (en) 2017-10-23 2019-10-29 Analog Devices, Inc. Switched capacitor banks
US10469029B2 (en) 2017-10-23 2019-11-05 Analog Devices, Inc. Inductor current distribution
CN110100290A (zh) * 2017-11-28 2019-08-06 野田士克林股份有限公司 Lc谐振元件和谐振元件阵列
JP7283434B2 (ja) * 2020-04-20 2023-05-30 株式会社村田製作所 集積受動部品
JP2022006781A (ja) * 2020-06-25 2022-01-13 Tdk株式会社 電子部品及びその製造方法
CN111740204B (zh) * 2020-08-17 2020-11-24 浙江臻镭科技股份有限公司 一种腔体谐振抑制结构及应用
JP2022144464A (ja) * 2021-03-19 2022-10-03 住友電工デバイス・イノベーション株式会社 キャパシタ
JP7569258B2 (ja) * 2021-04-12 2024-10-17 Tdk株式会社 薄膜キャパシタ及びその製造方法
WO2022255036A1 (ja) * 2021-05-31 2022-12-08 株式会社村田製作所 電子部品

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0689831A (ja) * 1992-09-08 1994-03-29 Toshiba Corp 薄膜コンデンサ
JPH06181119A (ja) * 1992-12-14 1994-06-28 Takeshi Ikeda Ｌｃ複合部品
JPH07283077A (ja) * 1994-04-11 1995-10-27 Ngk Spark Plug Co Ltd 薄膜コンデンサ
JPH08115851A (ja) * 1994-10-14 1996-05-07 Ngk Spark Plug Co Ltd 薄膜コンデンサ付きセラミック基板および その製造方法
JPH09139480A (ja) * 1995-01-27 1997-05-27 Toshiba Corp 薄膜キャパシタおよびこれを用いた半導体記憶装置
JP3380373B2 (ja) * 1995-06-30 2003-02-24 三菱電機株式会社 半導体記憶装置及びその製造方法
JPH1022457A (ja) * 1996-07-03 1998-01-23 Mitsubishi Electric Corp 容量装置及び半導体装置並びにそれらの製造方法
JPH10135077A (ja) 1996-10-30 1998-05-22 Kyocera Corp 薄膜キャパシタ
JPH10149946A (ja) * 1996-11-15 1998-06-02 Ngk Spark Plug Co Ltd キャパシタの製造方法及びキャパシタを備える基板
TW386289B (en) * 1997-07-03 2000-04-01 Matsushita Electronics Corp Capacitance element and manufacturing thereof
JP3193973B2 (ja) 1997-07-03 2001-07-30 松下電器産業株式会社 容量素子およびその製造方法
JP3519581B2 (ja) * 1997-09-16 2004-04-19 松下電器産業株式会社 容量素子の製造方法
US6278153B1 (en) * 1998-10-19 2001-08-21 Nec Corporation Thin film capacitor formed in via
JP3362776B2 (ja) * 1999-02-02 2003-01-07 日本電気株式会社 薄膜コンデンサ、薄膜コンデンサ内蔵基板および薄膜コンデンサの製造方法
JP2000323345A (ja) * 1999-05-11 2000-11-24 Tdk Corp 高周波電子部品及びその製造方法
JP2002025854A (ja) 2000-07-04 2002-01-25 Alps Electric Co Ltd 薄膜キャパシタ素子
JP3759381B2 (ja) 2000-07-17 2006-03-22 アルプス電気株式会社 電子回路基板
EP1170797A3 (en) * 2000-07-04 2005-05-25 Alps Electric Co., Ltd. Thin-film capacitor element and electronic circuit board on which thin-film capacitor element is formed
JP2002100533A (ja) * 2000-07-19 2002-04-05 Sony Corp キャパシタ素子の形成方法、複合薄膜素子の形成方法、配線基板及びモジュール基板
JP3934366B2 (ja) 2001-07-02 2007-06-20 アルプス電気株式会社 薄膜キャパシタ素子の製造方法
US6818469B2 (en) * 2002-05-27 2004-11-16 Nec Corporation Thin film capacitor, method for manufacturing the same and printed circuit board incorporating the same
JP3882779B2 (ja) * 2002-05-27 2007-02-21 日本電気株式会社 薄膜キャパシタ、薄膜キャパシタを含む複合受動部品、それらの製造方法およびそれらを内蔵した配線基板
JP2005033103A (ja) * 2003-07-10 2005-02-03 Matsushita Electric Ind Co Ltd 半導体記憶装置およびその製造方法
JP2005136074A (ja) * 2003-10-29 2005-05-26 Kyocera Corp コンデンサおよび直列コンデンサならびに可変コンデンサ
DE112005002160T5 (de) * 2004-09-09 2009-03-12 Tokyo Electron Ltd. Dünnfilmkondensator und Verfahren zum Bilden desselben sowie computerlesbares Speichermedium

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11742273B2 (en) 2016-12-21 2023-08-29 Dai Nippon Printing Co., Ltd. Through electrode substrate and semiconductor device
TWI834166B (zh) * 2016-12-21 2024-03-01 日商大日本印刷股份有限公司 貫通電極基板、半導體裝置及貫通電極基板之製造方法
US12136591B2 (en) 2016-12-21 2024-11-05 Dai Nippon Printing Co., Ltd. Through electrode substrate and semiconductor device

Also Published As

Publication number Publication date
JP2007300002A (ja) 2007-11-15
CN101067985A (zh) 2007-11-07
US7973246B2 (en) 2011-07-05
TWI430302B (zh) 2014-03-11
CN101067985B (zh) 2011-12-14
US20070253144A1 (en) 2007-11-01

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