TW200919085A - Photosensitive resin composition and laminate thereof - Google Patents

Photosensitive resin composition and laminate thereof Download PDF

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Publication number
TW200919085A
TW200919085A TW097135508A TW97135508A TW200919085A TW 200919085 A TW200919085 A TW 200919085A TW 097135508 A TW097135508 A TW 097135508A TW 97135508 A TW97135508 A TW 97135508A TW 200919085 A TW200919085 A TW 200919085A
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group
photosensitive resin
substrate
resin composition
mass
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TW097135508A
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TWI376573B (en
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Yamato Tsutsui
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Asahi Kasei Emd Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06Hydrocarbons
    • C08F212/08Styrene
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/30Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10Esters
    • C08F222/1006Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/102Esters of polyhydric alcohols or polyhydric phenols of dialcohols, e.g. ethylene glycol di(meth)acrylate or 1,4-butanediol dimethacrylate
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10Esters
    • C08F222/1006Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/106Esters of polycondensation macromers
    • C08F222/1063Esters of polycondensation macromers of alcohol terminated polyethers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • C09D4/06Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09D159/00 - C09D187/00
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031Organic compounds not covered by group G03F7/029
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041Photolithographic processes

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Materials For Photolithography (AREA)
  • Polymerisation Methods In General (AREA)
  • Graft Or Block Polymers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Laminated Bodies (AREA)

Abstract

Disclosed is a photosensitive resin composition containing 20-90% by mass of a binder resin (a), 5-75% by mass of an addition polymerizable monomer (b) having at least one terminal ethylenically unsaturated group, and 0.01-30% by mass of a photopolymerization initiator (c). The binder resin (a) has an acid equivalent weight of the carboxyl group content of 100-600 and a weight average molecular weight of 5,000-500,000, while containing a specific compound as a copolymerization component. This photosensitive resin composition is characterized in that the addition polymerizable monomer (b) contains a specific addition polymerizable monomer.

Description

200919085 九、發明說明: 【發明所屬之技術領域】 本發明係關於-種可藉由鹼性水溶液而顯影之感光性樹 脂組合物、將該感光性樹脂組合物積層於支持體上而成之 感光性樹脂積層體、使用該感光性樹脂積層體於基板上形 成阻劑圖案之阻劑圖案形成方法、以及該阻劑圖案之用 途。更詳細而言,本發明係關於一種提供適合作為下述保 護罩構件之阻劑圖案的感光性樹脂組合物,即,印刷電路 板之製造、可撓性印刷電路板之製造、IC晶片(Imegrated Circuit Chip,積體電路晶片)搭載用引線框架(以下稱為引 線框架)之製造、金屬掩模之製造等金屬箔精密加工、 BGA(Ball Grid Array,球形陣列)或 csp(chip ^200919085 IX. OBJECTS OF THE INVENTION: TECHNICAL FIELD The present invention relates to a photosensitive resin composition which can be developed by an aqueous alkaline solution, and which is formed by laminating the photosensitive resin composition on a support. A resin laminate, a resist pattern forming method for forming a resist pattern on a substrate using the photosensitive resin laminate, and a use of the resist pattern. More specifically, the present invention relates to a photosensitive resin composition which provides a resist pattern suitable as a protective cover member, that is, a printed circuit board, a flexible printed circuit board, and an IC chip (Imegrated) Circuit Chip, integrated circuit chip) Metal foil processing such as manufacturing of lead frame (hereinafter referred to as lead frame), metal mask manufacturing, BGA (Ball Grid Array) or csp (chip ^)

Package,晶片尺寸封裝)等半導體封裝之製造、以tab (Tape Automated Bonding,捲帶式自動接合)或 c〇F(ChipSemiconductor package manufacturing such as Package (wafer size package), tab (Tape Automated Bonding) or c〇F (Chip)

On FUm,薄膜覆晶:將半導體1(:搭載於膜狀之微細電路 板上)為代表的捲帶基板之製造、半導體凸塊之製造、平 板顯示器領域中之IT0(Indium Tin 〇xide,氧化銦錫)電極 或定址電極或者電磁波屏蔽罩等構件之製造、以及利用噴 砂法加工基材時之保護罩構件。 【先前技術】 先前,印刷電路板係利用光微影法製造。所謂光微影法 係指下述方法:將感光性樹脂組合物塗佈於基板上,進行 圖案曝光而使該感光性樹脂組合物之曝光部聚合硬化,並 使用顯影液將未曝光部除去,從而於基板上形成阻劑圖 134399.doc 200919085 案’實施敍刻或錢敷處理而形成導體圖案之後,自該基板 上剝除該阻劑圖案,藉此於基板上形成導體圖案。 於上述錢影法中,在將感光性樹月旨組合物塗佈於基板 上時,可使用以下方法中之任-種:將光阻劑溶液塗佈於 基板上並加以乾燥之方法;或者將依序積層有支持體、由 感光性樹脂組合物所形成之層(以下稱為「感光性樹脂 層」)、以及視需要之保護層而成的感光性樹脂積層體(以 下稱為「乾膜光阻」)積層於基板上之方法。而且,在製 造印刷電路板時,多使用後者之乾膜光阻。 以下,就使用上述乾膜光阻製造印刷電路板之方法進行 簡單說明。 先,於乾膜光阻具有聚乙烯膜等保護層之情形時,先 自感光性樹脂層上將其剝離。繼而,冑用層合機,於鋼箔 積層板等基板上’以成為該基板、感光性樹脂層、支持體 之順序而積層感光性樹脂層及支持體(通常由聚對笨二曱 酸乙二酯等所形成)。繼而,經由具有配線圖案之光罩, 利用超高壓水銀燈所發出之包含1線(365 nm)之紫外線對該 感光性樹脂層曝光,藉此使曝光部分聚合硬化。然後剥離 支持體。接著,使用具有弱鹼性之水溶液等顯影液,將感 光性樹脂層之未曝光部分溶解或分散除去從*於基板上 形成阻劑圖案。 另外,在形成阻劑圖案之後形成電路之製程大致可分為 兩種方法。第一種方法如下:將未由阻劑圖案覆蓋之鋼箔 積層板等之鋼面触刻除去,之後,使用強於顯影液之驗性 134399.doc 200919085 水岭液除去阻劑圖案部分。於此情況下,就步驟之簡便性 方面而言’多採用利用硬化膜將貫通孔(通孔)覆蓋之後進 行姑刻的方法(蓋孔法)。第二種方法如下:於與上述相同 之銅面上實施鍍銅處理,且視需要進一步實施焊锡、錄及 錫等之錄敷處理之後,用同樣的方式除去阻劑圖案部分並 進一步對所露出之銅_積層板等之銅面進行㈣的方法 (鍍敷法)蝕刻中可使用氣化銅、氣化鐵、銅銨錯合物溶 液、硫醆/過氧化氫水溶液等酸性蝕刻液。 隨著近年來印刷電路板之配線間隔之微細化,為良率佳 地製造窄間距之圖案,要求乾膜光阻具備高解像性及高密 著性。 另外,顯影後,有時於硬化阻劑與基板之分界部分會產 生被稱作底腳(硬化阻劑足部)(參照圖丨)之半硬化阻劑若 該底腳增大,則阻劑線彼此之底腳相互接觸而造成解像不 足,從而引起蝕刻步驟後之導體圖案產生搖擺之問題。因 此,業界謀求一種顯影後硬化阻劑之底腳極小之乾膜光 阻。 另外,近來,自良率佳地製造窄間距之圖案之方面考 慮,鍍敷法之重要性逐漸增加。於鍍敷法中,光阻之耐鍍 敷液性較為重要,若耐鍍敷液性不充分,則容易出現下述 現象:在進行鍍敷之前處理時處理液滲透至阻劑與基板之 間,使硬化之阻劑產生底切,導致阻劑自基板抬升。若出 現此種現象,則會產生鍍敷潛入(鍍敷一直到達阻劑之下 部為止之現象),因此期待耐鍍敷液性優異之阻劑。 134399.doc 200919085 於專利文獻1中,就含有曱基丙烯酸/曱基丙烯酸甲黯/兩 稀酸丁醋/丙稀酸2-乙基己酿之四元共聚物、以及二環癸广 二甲醇二曱基丙稀酸酯的感光性樹脂組合物之解像度、密 著性、耐鍍敷液性、剝離特性、浮渣產生性作了記載,但 是其解像度、密著性、耐鍍敷液性無法充分應對現狀。 [專利文獻1]日本專利特開2001-154348號公報 【發明内容】 [發明所欲解決之問題] 本發明之目的在於提供一種感光性樹脂組合物以及使用 其之感光性樹脂積層體,該感光性樹脂組合物具有作為蝕 刻阻劑或鍍敷阻劑等之阻劑材料的特別優異之高解像性及 间Φ著性,且顯影後之底腳極小,並且耐鍍敷液性優異。 [解決問題之技術手段] 上述目的可藉由本發明之以下構成而達成。,本發明 如下所述。 1. 一種感光性樹脂組合物,其含有: (a) 黏合劑用樹脂2〇〜9〇哲县0/ _ . Α Α w 賈I %,該(a)黏合劑用樹脂中羧基 含量以酸當量計為〗αλλ α Τ马100〜600,含有選自以下述通式⑴及(II) 所表示之化合物群Φ沾κ , 砰甲的至少一種化合物單元作為共聚成 分,且重量平均分子吾& 于里為 5,000〜500,000 ; (b) 具有至少一個太妓7泣。 木^乙烯性不飽和基之加成聚合性單體 5〜75質量% :以及 ⑷光聚合起始劑〇.G1〜3Qf量%;並且, 該加成聚合性單體(b)含有選自以下述通式⑽所表示之 134399.doc 200919085 化合物群中的至少一種加成聚合性單體., Htl] ’ h2c=9On FUm, film flip-chip: manufacture of a tape substrate represented by semiconductor 1 (: mounted on a film-like micro-board), manufacture of semiconductor bumps, and IT0 (Indium Tin 〇 xide, oxidation) in the field of flat panel displays The manufacture of a member such as an indium tin) electrode or an address electrode or an electromagnetic wave shield, and a protective cover member when the substrate is processed by a sand blast method. [Prior Art] Previously, printed circuit boards were manufactured by photolithography. The photolithography method is a method in which a photosensitive resin composition is applied onto a substrate, pattern exposure is performed, and the exposed portion of the photosensitive resin composition is polymerized and cured, and the unexposed portion is removed using a developing solution. Therefore, after the resist pattern 134399.doc 200919085 is formed on the substrate to form a conductor pattern, the resist pattern is removed from the substrate, thereby forming a conductor pattern on the substrate. In the above-described money shadow method, when the photosensitive resin composition is applied onto a substrate, any of the following methods may be used: a method in which a photoresist solution is applied onto a substrate and dried; or A photosensitive resin laminate in which a support layer, a layer formed of a photosensitive resin composition (hereinafter referred to as "photosensitive resin layer"), and an optional protective layer are laminated in this order (hereinafter referred to as "dry" Film photoresist") A method of laminating on a substrate. Moreover, the latter's dry film photoresist is often used in the manufacture of printed circuit boards. Hereinafter, a method of manufacturing a printed circuit board using the above dry film photoresist will be briefly described. When the dry film photoresist has a protective layer such as a polyethylene film, it is first peeled off from the photosensitive resin layer. Then, using a laminator, a photosensitive resin layer and a support are laminated on a substrate such as a steel foil laminate, in the order of the substrate, the photosensitive resin layer, and the support (usually by poly-p-benzoic acid B) A diester or the like is formed). Then, the photosensitive resin layer was exposed by ultraviolet rays containing 1 line (365 nm) emitted from an ultrahigh pressure mercury lamp through a mask having a wiring pattern, whereby the exposed portion was polymerized and cured. Then peel off the support. Next, a developer such as a weakly alkaline aqueous solution is used to dissolve or disperse the unexposed portion of the photosensitive resin layer to form a resist pattern from the substrate. In addition, the process of forming a circuit after forming a resist pattern can be roughly divided into two methods. The first method is as follows: the steel surface of the steel foil laminate or the like which is not covered by the resist pattern is touch-etched, and then the resist pattern portion is removed using an inspectability 134399.doc 200919085 stronger than the developer. In this case, in terms of the simplicity of the steps, a method of covering the through holes (through holes) with a cured film and then performing the engraving (cover hole method) is often employed. The second method is as follows: a copper plating treatment is performed on the same copper surface as described above, and after further performing soldering, recording, and the like, as needed, the resist pattern portion is removed in the same manner and further exposed. The method of the copper surface of the copper _ laminate or the like (4) (plating method) An etching solution such as vaporized copper, vaporized iron, a copper ammonium complex solution, or a sulfurium/hydrogen peroxide aqueous solution can be used for the etching. With the miniaturization of wiring intervals of printed circuit boards in recent years, it is required to produce a pattern having a narrow pitch for good yield, and it is required that the dry film photoresist has high resolution and high density. In addition, after development, a semi-hardening resist called a foot (hardened resist foot) may be formed in the boundary portion between the hardening resist and the substrate (see FIG. 丨). If the foot is increased, the resist is added. The feet of the wires are in contact with each other to cause insufficient resolution, thereby causing a problem that the conductor pattern after the etching step is swayed. Therefore, the industry seeks a dry film photoresist having a very small footprint on the post-development hardening resist. Further, recently, the importance of the plating method has been increasing from the viewpoint of producing a narrow pitch pattern with good yield. In the plating method, the plating resistance of the photoresist is important, and if the plating resistance is insufficient, the following phenomenon is likely to occur: the treatment liquid penetrates between the resist and the substrate during the treatment before the plating is performed. The undercut is caused by the hardened resist, causing the resist to rise from the substrate. If such a phenomenon occurs, plating penetration (a phenomenon in which the plating reaches the lower portion of the resist) occurs, and therefore a resist having excellent plating resistance is expected. 134399.doc 200919085 In Patent Document 1, a quaternary copolymer containing methacrylic acid/mercaptoacrylic acid hydrazide/two dibasic acid butyl vinegar/acrylic acid 2-ethyl hexanyl ketone, and bicyclo fluorene dimethanol The resolution, adhesion, plating resistance, peeling property, and scum generation property of the photosensitive resin composition of the dimercapto acrylate are described, but the resolution, the adhesion, and the plating resistance are described. Can not fully respond to the status quo. [Problem to be Solved by the Invention] An object of the present invention is to provide a photosensitive resin composition and a photosensitive resin laminate using the same, which is photosensitive The resin composition has particularly excellent high resolution and inter-pigmentability as a resist material such as an etching resist or a plating resist, and has extremely small feet after development and is excellent in plating resistance. [Technical means for solving the problem] The above object can be achieved by the following constitution of the present invention. The present invention is as follows. A photosensitive resin composition comprising: (a) a binder resin 2〇~9〇哲县0/ _. Α Α w 贾I %, the (a) binder resin has a carboxyl group content of acid The equivalent weight is λαλλ α Τ马 100-600, and at least one compound unit selected from the group consisting of compound groups Φ, κ, and 砰 represented by the following general formulas (1) and (II) is used as a copolymerization component, and the weight average molecular weight is &; in the case of 5,000 ~ 500,000; (b) has at least one too 妓 7 weeping. 5 to 75% by mass of the addition polymerizable monomer of the wood ethylenically unsaturated group: and (4) the amount of the photopolymerization initiator 〇.G1 to 3Qf; and the addition polymerizable monomer (b) is selected from the group consisting of At least one of the addition polymerizable monomers in the compound group of 134399.doc 200919085 represented by the following formula (10), Htl] 'h2c=9

(I) (式中,R1表示氫原子或甲基,…表 <自由風原子、鹵 素原子、鉍基、碳數為卜12之燒基、 « ^ A 娀數為1〜12之烷氧 基 '羧基、以及_烷基所組成之群中 V 稷基。) [化 2] ’ (B) H2C=rC—C00—CH; (式中’R3表示氫原子或甲基’ R4表示 素原子、經基、碳一之院基、碳數為 基、叛基1及i絲所M成之群中的—種基 70乳 [化 3] 土。) 0 I! 〇Η^〇Ηα-〇)^Β-〇^〇--〇=〇Η2 -•(HI) (R Μ分別獨立表示氫原子或甲基。Α及Β表示碳數 之伸烧基,其等可相同亦可不同,於不同之情形時〜6 0)·及夢〇)·重複單元可為嵌段結構亦可為無規^ 134399.doc 200919085 ^、m2、m3及功4為〇或正整數,該等之合計為〇〜4〇。r 為鹵素原子或碳數為1〜3之烷基,n為〇〜〗4之整數)。 2.如上述】.之感光性樹脂組合物,其中以上述通式(Ιπ) 所表不之至少一種加成聚合性單體相對於感光性樹脂組a 物整體之含有率為5〜35質量%。 3 ·如上述1.或2.之感光性樹脂組合物 起始劑(C)含有選自以下述通式(IV)所表 至>、種2,4,5-三芳基π米唾二聚物: [化4] ,其中上述光聚合 示之化合物群中的(I) (wherein R1 represents a hydrogen atom or a methyl group, ... < a free-air atom, a halogen atom, a fluorenyl group, a carbon number of 12, and a ^ a A alkoxy group having a number of 1 to 12 a group consisting of a 'carboxy group, and a group consisting of _alkyl groups, a V sulfhydryl group.) [Chemical 2] ' (B) H2C=rC—C00—CH; (wherein 'R3 represents a hydrogen atom or a methyl group' R4 represents a prime atom , the basis of the base of the carbon, the base of the carbon, the carbon number, the base of the group of the rebellious 1 and the i-M, the 70-milk [3] soil.) 0 I! 〇Η^〇Ηα-〇 ^Β-〇^〇--〇=〇Η2 -•(HI) (R Μ independently represents a hydrogen atom or a methyl group. Α and Β represent a carbon number extension group, which may be the same or different, In different cases, ~6 0)··nightmare)·The repeating unit may be a block structure or a random ^ 134399.doc 200919085 ^, m2, m3 and work 4 are 〇 or positive integers, the sum of these is 〇~4〇. r is a halogen atom or an alkyl group having a carbon number of 1 to 3, and n is an integer of 〇~4. 2. The photosensitive resin composition according to the above aspect, wherein the content of at least one of the addition polymerizable monomers represented by the above formula (Ιπ) with respect to the entire photosensitive resin group a is 5 to 35 mass. %. 3. The photosensitive resin composition starting agent (C) according to the above 1. or 2. contains a compound selected from the group consisting of the following formula (IV) to >, 2,4,5-triaryl π methane Polymer: [Chem. 4] wherein the above photopolymerization shows a group of compounds

基及烷氧基、以及_基所組成 分別獨立為1〜5之整數。)。 選自由氫、 之群中的―The base and the alkoxy group and the _ group are each independently an integer of 1 to 5. ). Choose free hydrogen, the group of

1〜5之烷 P、q及 r 4.如上述1.至3.中任一頊 巧 嗅之感光性樹炉 述加成聚合性單體(b)含有選自以下 '、"、、'且合物, 合物群中的至少一種加成聚合性單體〔.通式(V)所表 其中上 示之化 B4399.doc -10- ••(V) 200919085 [化5] ff fHa 0 H2C=C—C—(c2H4-〇)^CH2CH-〇}—-^C2H4~〇}—c- -c: :CH〇 (式中,R8及R9分別獨立表示氫原子或曱基。^及13為〇 4 之整數,t2為4〜20之整數。)。 5·如上述1至4中任一項之感光性樹脂組合物,其中每 10〇 g感光性樹脂組合物中,上述加成聚合性單體之末 端乙烯性不飽和基(反應性末端基)為〇.1〇〜〇 4〇莫耳。 6· —種感光性樹脂積層體’其包含支持體以及積層於其 上之如上述1〜5中任一項之感光性樹脂組合物。 7. —種阻劑圖案之形成方法,其包括層壓步驟、曝光步 驟、以及顯影步驟’於層壓步驟中,使用如上述6之感光 性樹脂積層體於基板上形成感光性樹脂層。 8. 如上述7之阻劑圖案形成方法,其中於上述曝光步驟 中進行直接刻寫。 9. —種印刷電路板之製造方法,其包括對利用如上述7 或8之方法而形成有阻劑圖案之基板進行蝕刻或鍍敷的步 10·~種引線框架之製造方法,其包括對利用如上述7或 之·方去而形成有阻劑圖案之基板進行蚀刻的步驟。 種半導體封裝之製造方法’其包括對利用如上述7 或8之方法而形成有阻劑圖案之基板進行蝕刻或鍍敷的步 驟。 134399,d〇c 11 200919085 12. —種凸塊之製造方法,其包括對利用如上述了或^之 方法而形成有阻劑圖案之基板進行蝕刻或鍍敷的步驟。 13. —種具有凹凸圖案之基材之製造方法,其包括藉由 噴砂對利用如上述7或8之方法而形成有阻劑圖案之基板進 行加工的步驟。 [發明之效果] 本發明之感光性樹脂組合物、感光性樹脂積層體、使用 其等之阻劑圖案之形成方法以及印刷電路板、引線框架、 封裝、凸塊及具有凸圖案之基材之製造方法,發揮出具 有特別優異之高解像性及高密著性、顯影後之底腳極小、、 而且耐鑛敷液性優異的效果。 【實施方式】 以下,對本發明進行更具體之說明。 (a)黏合劑用樹脂 本發明中所使用之黏合劑用樹脂(a)係叛基含量以酸當量 計為100〜600、含有選自以下述通式⑴及(ιι)所表示之化合 物群中的至少一種化合物作為共聚成分、且重量平均分子 置為5,000〜500,000的黏合劑用樹脂。 [化6] h2c-c-^r2 …⑴ R1 (式中,R1表示氫原子或甲基,r2表示選自由氯原子、南 素原子、羥基、碳數為卜12之烷基、碳數為卜η之烷氡 基、緩基、以及i燒基所組成之群中的—種基。) 134399.doc 200919085 [化7] h2c=c—coo— R4 (D)1 to 5 of the alkane P, q and r 4. The photosensitive polymerizable monomer (b) of any one of the above-mentioned 1. to 3. contains a selected from the following ', ", 'and a compound, at least one addition polymerizable monomer in the compound group. (Formula (V) shown in the above formula B4399.doc -10- ••(V) 200919085 [Chemical 5] ff fHa 0 H2C=C—C—(c2H4-〇)^CH2CH-〇}—^C2H4~〇}—c- -c: :CH〇 (wherein R8 and R9 independently represent a hydrogen atom or a sulfhydryl group. ^ And 13 is an integer of 〇4, and t2 is an integer of 4 to 20.). The photosensitive resin composition of any one of the above-mentioned 1 to 4, wherein the terminally polymerizable monomer has a terminal ethylenically unsaturated group (reactive terminal group) per 10 μg of the photosensitive resin composition. For 〇.1〇~〇4〇莫耳. (6) A photosensitive resin laminate comprising a support and a photosensitive resin composition according to any one of the above 1 to 5 laminated thereon. 7. A method of forming a resist pattern comprising a laminating step, an exposing step, and a developing step. In the laminating step, a photosensitive resin layer is formed on the substrate using the photosensitive resin laminate as described above. 8. The method of forming a resist pattern according to the above 7, wherein direct writing is performed in the above exposure step. 9. A method of manufacturing a printed circuit board, comprising: a method of manufacturing a lead frame of a step of etching or plating a substrate having a resist pattern formed by the method of 7 or 8 above, comprising The step of etching the substrate having the resist pattern formed by the above 7 or the above is performed. A method of manufacturing a semiconductor package 'includes a step of etching or plating a substrate on which a resist pattern is formed by the method of 7 or 8 above. 134399, d〇c 11 200919085 12. A method of manufacturing a bump comprising the step of etching or plating a substrate having a resist pattern formed by the method described above or the like. A method of producing a substrate having a concave-convex pattern, comprising the step of processing a substrate having a resist pattern formed by the method of the above 7 or 8 by sand blasting. [Effects of the Invention] The photosensitive resin composition of the present invention, the photosensitive resin laminate, a method of forming a resist pattern using the same, and a printed circuit board, a lead frame, a package, a bump, and a substrate having a convex pattern The production method exhibits an excellent effect of high resolution and high adhesion, extremely small feet after development, and excellent resistance to mineralizing liquid. [Embodiment] Hereinafter, the present invention will be more specifically described. (a) Resin for the binder The resin for the binder (a) used in the present invention is a compound having a group content of 100 to 600 in terms of acid equivalent, and a compound group selected from the group consisting of the following formulas (1) and (ι) A resin for a binder having at least one compound as a copolymerization component and having a weight average molecular weight of 5,000 to 500,000. H2c-c-^r2 (1) R1 (wherein R1 represents a hydrogen atom or a methyl group, and r2 represents an alkyl group selected from a chlorine atom, a south atom, a hydroxyl group, a carbon number of 12, and a carbon number of a group of a group consisting of a decyl alkano group, a slow group, and an i-based group.) 134399.doc 200919085 [Chemical 7] h2c=c-coo- R4 (D)

(式中,R3表示氫原子或甲&14表示選自由氫原 素原子、經基、碳數為1〜12之烧基、碳數為H2之燒氧 基、叛基、以及㈣基所組成之群中的—種基。) 黏合劑用樹脂⑷中所含之絲之量,以酸當量計較好的 是1〇0曰以上、儀以下,更好的是25〇以上、450以下。所謂 酸當量,係指其中具有1當量之竣基的黏合劑用樹脂之質 量。 黏合劑用樹脂中之縣係為對光聚合性樹脂層賦予相對 於驗性水溶液之顯影性或剝離性而必須者。就耐顯影性提 昇、解像度以及密著性提昇之方面而[該酸當量為ι〇〇 以上,就顯影性及剝離性提昇之方面而言,該酸當量為 600以下。酸當量係使用平沼產業(股)製造之平沼自動滴定 裝置(COM-555) ’使m〇1/L之氫氧化納,以電位滴定 法來進行測定。 發明中所使用之黏合劑用樹脂(a)之重量平均分子量為 5’000〜500,000 ^就顯影性及解像性提昇之方面而言,該重 量平均分子量為500,〇〇〇以下,就抑制將感光性樹脂積層 體捲繞成輥狀時感光性樹脂組合物自輥端面滲出之現象、 即抑制邊緣熔融之方面而言,該重量平均分子量為5 以上。為更好地發揮出本發明之效果,黏合劑用樹脂之重 量平均分子量更好的是5,000〜1〇〇,〇〇〇,進而更好的是 134399.doc 200919085 5,000〜60,000 ° 重量平均分子量可使用日本分光(股)製造之凝膠滲透層 析儀(GPC)(泵:Gulliver,pu-1580型;管柱:昭和電工 (股)製造之 Shodex(註冊商標)(KF_8〇7、KF 8〇6M、KF_ 806M、KF-8〇2.5)4根串聯;移動床溶劑:四氫呋喃;使用 聚苯乙稀標準樣品(昭和電工(股)製造之sh〇dex STANDARD SM-105)之校準曲線),以聚苯乙烯換算之形 式而求出。 (1 本發明中所使用之黏合劑用樹脂(a)可藉由自下述2種單 體中分別選擇一種或一種以上單體並進行共聚而獲得。 第一單體為分子中具有一個聚合性不飽和基之羧酸或酸 酐。例如可列舉:(曱基)丙烯酸、反丁烯二酸、肉桂酸、 丁烯酸、衣康酸、順丁烯二酸酐、順丁烯二酸半酯。 第二單體係非酸性且分子中具有一個聚合性不飽和基之 化合物。對該化合物加以選擇,以保持感光性樹脂層之顯 影性、蝕刻及鍍敷步驟中之耐性、硬化臈之可撓性等各種 ° 特性,且該化合物包含選自以上述通式⑴及(II)所表示之 化合物群中的至少一種化合物作為必需成分。 乍為以上述通式(I)所表示之化合物,例如有苯乙浠及苯 乙烯衍生物,例如可列舉:α ·甲基苯乙烯、對羥基苯乙 稀、對甲基苯乙烯、對甲氧基苯乙烯、對氣苯乙浠。 作為以上述通式(11)所表示之化合物,例如可列舉:(甲 基)丙稀酸节醋'(甲基)丙嫦酸4_經基节帛、(甲基烯酸 4-甲氧基节醋、(甲基)丙稀酸4_甲基节醋、(曱基)丙稀酸4_ 134399.doc 14 200919085 氣节s旨。 尤其是作為選自以上述通式⑴及⑻所表示之化合物群 中的至夕種化合物,就顯影後之底腳產生性低(無底腳 或底腳極小)之觀點而t ’較好的是使用苯乙烯,另外, 就解像度、⑥、著性以及底腳產生性之觀點而言,更曰 使用(甲基)丙烯酸苄酯。 ^ 1分子之黏合劑用樹脂(a)中所共聚的選自以上述通式⑴ 及(π)所表示之化合物群中的至少一種化合物之量,相對 於黏合劑用樹脂⑷較好的是丨〇質量%以上、95質量%以 下。就解像性及密著性、耐鍍敷液性、底腳產生性之觀點 而言,該量較好的是10質量%以上,就顯影性之觀點而 ° °亥1較好的是95質量°/°以下。該量更好的是20質量% 以上、90質量%以下,進而更好的是25質量%以上、8〇質 量%以下。 本發明中所使用之黏合劑用樹脂(幻中,作為第二單體, 除了必須成分即上述通式(I)及/或(11)之化合物以外,亦可 併用3亥荨以外之公知单體作為共聚成分。例如可列舉(曱 基)丙烯酸曱酯、(曱基)丙烯酸乙酯、(甲基)丙稀酸正丙 酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸正丁酯、(曱基)丙 稀酸2-乙基己酯、(曱基)丙稀酸2-經基乙醋、(曱基)丙稀酸 2-羥基丙酯、(曱基)丙烯酸4-羥基丁酯、聚乙二醇單(甲基) 丙烯酸酯、聚丙二醇單(曱基)丙烯酸酯、(甲基)丙稀醯 胺、N-羥曱基丙烯醯胺、N-丁氧基甲基丙烯醯胺、(甲基) 丙稀腈、(甲基)丙烯酸縮水甘油酯,該等可分別單獨使 134399.doc -15· 200919085 用’亦可將2種以上組合使用。 本發明t所使用之黏合劑樹脂⑷較好的是以下述方式合 成:將上述第一單體與第二單體混合,用溶劑例如丙_、 F基乙基爾或異丙醇稀釋,於所得之溶液中添加適量之 自由基聚合起始劑,例如過氧化苯尹醯、偶氮異丁腈,並 加熱攪拌。有時亦會一面將混合物之—部分滴加於反應液 中,-面合成。有時亦會在反應結束之後進—步添加溶 劑’調整成所需之濃度。作為合成方法,除溶液聚合以 外,亦可採用塊狀聚合、懸浮聚合、或乳化聚合。 本發財所使狀#合㈣樹脂⑷㈣於感綠樹脂組 合物(固形分,以下相同)之總和的比例為2〇〜9〇質量%之範 圍’較好的是30〜70質量%。就藉由曝光、顯影而形成之 阻劑圖案具有作為阻劑之特性’例如於蓋孔、钱刻以及各 種鍍敷步驟中具有充分之耐性等之觀點而言,該比例較好 的是20質量%以上、9〇質量%以下。 (b)加成聚合性單體 本發明中所使用之加成聚合性單體(b)係具有至少一個 末端乙稀性不飽和基之加成聚合性單體。加成聚合性單體 W含有選自以下述通式⑽所表示之化合物群中的至少一 種加成聚合性單體作為必需成分。 I34399.doc 16 200919085 [化8] 侉 - V^y r6 (r7)„ CH2-0-^A-0)^f-8-0)^c—C=CH2(wherein R3 represents a hydrogen atom or a & 14 represents a group selected from the group consisting of a hydrogen atom, a meridine, a carbon group having a carbon number of 1 to 12, an alkoxy group having a carbon number of H2, a thiol group, and a (meth) group. The amount of the silk contained in the resin (4) for the binder is preferably 1 Torr or more, more preferably 25 Å or more, and 450 or less in terms of acid equivalent. The acid equivalent is the mass of the binder resin having one equivalent of a mercapto group. The prefecture in the resin for the binder is required to impart developability or releasability to the photopolymerizable resin layer with respect to the aqueous solution. In terms of development resistance, resolution, and adhesion improvement [the acid equivalent is ι 〇〇 or more, the acid equivalent is 600 or less in terms of improvement in developability and peelability. The acid equivalent was measured by a potentiometric titration method using a Hirohime automatic titrator (COM-555) manufactured by Hiranuma Sangyo Co., Ltd. to make sodium hydroxide of m〇1/L. The resin for a binder (a) used in the invention has a weight average molecular weight of 5'000 to 500,000 ^. In terms of developability and resolution, the weight average molecular weight is 500, and 〇〇〇 is suppressed. When the photosensitive resin laminate is wound into a roll shape, the photosensitive resin composition bleeds out from the end surface of the roll, that is, the edge-melting is suppressed, and the weight average molecular weight is 5 or more. In order to better exert the effect of the present invention, the weight average molecular weight of the binder resin is preferably 5,000 to 1 Torr, 〇〇〇, and more preferably 134399.doc 200919085 5,000 to 60,000 ° weight average molecular weight can be Gel permeation chromatography (GPC) manufactured by Japan Spectrophotometer (GPC) (pump: Gulliver, pu-1580; column: Shodex (registered trademark) manufactured by Showa Denko (share) (KF_8〇7, KF 8〇 6M, KF_ 806M, KF-8 〇 2.5) 4 series in series; moving bed solvent: tetrahydrofuran; using a calibration curve of polystyrene standard sample (sh〇dex STANDARD SM-105 manufactured by Showa Denko) It is obtained by the form of polystyrene conversion. (1) The binder resin (a) used in the present invention can be obtained by selecting one or more monomers from the following two monomers and copolymerizing them. The first monomer has a polymerization in the molecule. A carboxylic acid or an acid anhydride of an unsaturated group, for example, (mercapto)acrylic acid, fumaric acid, cinnamic acid, crotonic acid, itaconic acid, maleic anhydride, maleic acid half ester The second single system is a compound which is non-acidic and has a polymerizable unsaturated group in the molecule. The compound is selected to maintain the developability of the photosensitive resin layer, resistance in the etching and plating steps, and hardening. The compound has at least one compound selected from the group consisting of the compounds represented by the above formulas (1) and (II) as an essential component, and the compound represented by the above formula (I), For example, there are phenethyl hydrazine and a styrene derivative, and examples thereof include α-methylstyrene, p-hydroxystyrene, p-methylstyrene, p-methoxystyrene, and p-benzophenone. Expression represented by the general formula (11) For example, (meth)acrylic acid vinegar '(methyl)propionic acid 4_ via ganglion, (methic acid 4-methoxy vinegar, (meth) acrylic acid 4-methyl vinegar, (mercapto) acrylic acid 4 _ 134399.doc 14 200919085 In particular, as a compound selected from the group of compounds represented by the above formulas (1) and (8), The development of the foot is low (no foot or foot is extremely small) and t 'is better to use styrene, and in terms of resolution, 6, and foot productivity,曰 benzyl (meth) acrylate is used. ^ 1 molecule of binder is used in the amount of at least one compound selected from the group consisting of the compounds represented by the above formulas (1) and (π) copolymerized in the resin (a). The binder resin (4) is preferably 丨〇% by mass or more and 95% by mass or less. The amount is preferably from the viewpoints of resolution, adhesion, plating resistance, and foot productivity. It is 10% by mass or more, and from the viewpoint of developability, it is preferably 95 mass%/° or less. The amount is more preferably 20% by mass or more. 90% by mass or less, and more preferably 25% by mass or more and 8% by mass or less. The binder resin used in the present invention is a second monomer, except for the essential component, the above formula (I) In addition to the compound of (11), a known monomer other than 3 荨 can be used in combination as a copolymerization component, and examples thereof include decyl acrylate, ethyl (meth) acrylate, and (meth) propyl. N-propyl diester, cyclohexyl (meth)acrylate, n-butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, 2-mercapto acid 2-base Vinegar, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, polyethylene glycol mono (meth) acrylate, polypropylene glycol mono (decyl) acrylate, (A Alkenylamine, N-hydroxydecyl acrylamide, N-butoxymethyl acrylamide, (meth) acrylonitrile, glycidyl (meth) acrylate, these can be individually 134399.doc -15· 200919085 It is also possible to use two or more types together. The binder resin (4) used in the present invention t is preferably synthesized by mixing the above first monomer with a second monomer, and diluting with a solvent such as C-, F-ethylethyl or isopropanol. An appropriate amount of a radical polymerization initiator such as benzophenone oxime or azoisobutyronitrile is added to the resulting solution, and the mixture is heated and stirred. Sometimes, a part of the mixture is added dropwise to the reaction liquid, and the surface is synthesized. Sometimes, the solvent is added to the desired concentration after the reaction is completed. As the synthesis method, in addition to solution polymerization, bulk polymerization, suspension polymerization, or emulsion polymerization may also be employed. The ratio of the total of the green resin composition (solid content, the same applies hereinafter) in the range of 2 〇 to 9 〇 mass% is preferably 30 to 70% by mass. The resist pattern formed by exposure and development has a property as a resisting agent, for example, a cap hole, a money punch, and sufficient resistance in various plating steps, etc., and the ratio is preferably 20 mass. % or more and 9% by mass or less. (b) Addition polymerizable monomer The addition polymerizable monomer (b) used in the present invention is an addition polymerizable monomer having at least one terminal ethylenically unsaturated group. The addition polymerizable monomer W contains at least one addition polymerizable monomer selected from the group consisting of the following general formula (10) as an essential component. I34399.doc 16 200919085 化 - V^y r6 (r7) „ CH2-0-^A-0)^f-8-0)^c—C=CH2

II o ⑻化㈣❹表示氫原子或甲基。表示碳數為^ 之伸烷基,該等可相同亦可不同,於不同之情形時,_(A_ 〇)-及-(B-〇)-重複單元可為嵌段結構亦可為無規結構。 mi、m2、m3及„14為〇或正整數,該等之合計為〇〜4〇。r7 為鹵素原子或碳數為1〜3之烷基,11為〇〜14之整數。) 於選自以上述通式(111)所表示之化合物群中的至少一種 加成聚合性單體中,ΑΛΒ較理想的是伸乙基或伸丙基。 另外,就解像度以及密著性之觀點而言, 較好的是似下,更好的是2(Ηχτ,進而更好的是㈣ 〇 下。η較理想的是0。 作為以上述通式(ΙΠ)所表示之至少—種加成聚合性單體 之具體例,有二環癸烷二甲醇二丙烯酸酯(新中村化學工 業(股)製造之NK Ester A_Dcp)以及三環癸烷二甲醇二曱基 丙烯酸醋(新中村化學工業(股)製造之NK Esur Dcp)。 於本發明中’選自以上述通式(m)所表示之化合物群中 的至少一種加成聚合性單體相對於感光性樹脂組合物整體 之含有率為5〜40質量❶/。,係較好之實施態樣。就獲得解像 134399.doc -17· 200919085 二者性、耐鑛敷液性之觀點而言,該含㈣㈣的是 質里/。以上,就顯影性之觀點而言,該含有率較好的日 4〇質量%以下。該含有率之更好範圍為7〜35質量%,進: 更好之範圍為9〜3 0質量%。 作為本發明之感光性樹脂組合物中所使用的加成聚人性 早體⑻’除上述化合物以外,亦可使用具有至少一個末端 乙稀性不飽和基的公知之化合物。 例如可列舉:4·壬基苯基七乙二醇二丙二醇丙烯酸酯、 、 ㈣酸2-縣_3_苯氧基㈣、笨氧基六乙二醇丙烯酸酿、 鄰苯二甲酸肝與丙稀酸2經基丙酿之半醋化合物與環氧丙 烷之反應物(日本觸媒化學製造’商品名〇£_八2〇〇)、4_正 辛基苯氧基五丙二醇丙婦酸_、2,2_雙[{4_(甲基)丙稀酿氧 基聚乙氧基}苯基]丙烧、2,2_雙{(4.丙稀醯氧基聚乙氧基) 環己基}丙院、2,2-雙U4_甲基丙歸醯氧基聚乙氧基)環己 基}丙烷、1,6-己二醇(甲基)丙烯酸酯、丨,4_環己二醇二(甲 基)丙烯酸酯、聚丙二醇二(甲基)丙烯酸酯、聚乙二醇二 ’ (甲基)丙烯齩®曰、聚氧乙烯聚氧丙烯二醇二(甲基)丙烯酸 酯等聚氧化烯二醇二(曱基)丙烯酸酯、2_二(對羥基苯基) 丙烷二(甲基)丙烯酸酯、甘油三(甲基)丙烯酸酯、含有胺 基甲酸酯基之多官能基(甲基)丙烯酸酯(例如,六亞甲基二 異氰酸醋與五丙二酵單曱基丙烯酸酯之胺基甲酸酯化合 物)、以及異三聚氰酸酯化合物之多官能(曱基)丙烯酸酯。 該等可單獨使用,亦可將2種以上併用。 其中,就顯影性之觀點而言,加成聚合性單體(b)含有 134399.doc -18- 200919085 込自以下述通式(v)所表示之化合物群中的至少一種加 聚合性單體,係、本發明之較好實施形態。 、 [化9] 0 ο C^~〇)^CH2CH-〇}^C2H^〇)_11_C_Ch? (式中’ R及R9分別獨立表示氯原子或甲基。^及 之整數,t2為4〜20之整數。) ’ r ,·(ν) 作為選自以上述通式(V)所表示之化合物群中的至小 種加成聚合性單體,你丨 夕II o (8) (4) ❹ represents a hydrogen atom or a methyl group. Indicates an alkyl group having a carbon number of ^, which may be the same or different. In different cases, the _(A_ 〇)- and -(B-〇)-repeat units may be block structures or random. structure. Mi, m2, m3 and „14 are 〇 or a positive integer, and the total of these is 〇~4〇. r7 is a halogen atom or an alkyl group having a carbon number of 1 to 3, and 11 is an integer of 〇~14.) In the case of at least one of the addition polymerizable monomers in the compound group represented by the above formula (111), hydrazine is preferably an ethyl group or a propyl group. Further, in terms of resolution and adhesion, Preferably, it is lower, more preferably 2 (Ηχτ, and even more preferably (4) 〇. η is preferably 0. As at least one kind of addition polymerization represented by the above formula (ΙΠ) Specific examples of the monomer include dicyclodecane dimethanol diacrylate (NK Ester A_Dcp manufactured by Shin-Nakamura Chemical Co., Ltd.) and tricyclodecane dimethanol dimercapto acrylate vine (Xinzhongcun Chemical Industry Co., Ltd.) NK Esur Dcp). In the present invention, the content of at least one of the addition polymerizable monomers selected from the group of compounds represented by the above formula (m) with respect to the entire photosensitive resin composition is 5~ 40 mass ❶ /., is a better implementation. Get the solution 134399.doc -17· 200919085 II From the viewpoint of the nature of the minerals and the mineral-resistant liquid, the content of (4) and (4) is in the form of a mass. In the above, from the viewpoint of developability, the content of the content is preferably 4% by mass or less. The addition range is from 7 to 35% by mass, and more preferably from 9 to 30% by mass. The addition-polymeric precursor (8) used in the photosensitive resin composition of the present invention is in addition to the above compounds. A known compound having at least one terminal ethylenically unsaturated group can be used. For example, 4, nonylphenyl heptaethylene glycol dipropylene glycol acrylate, (4) acid 2- County _3-phenoxy (tetra), Styrene hexaethylene glycol acrylic acid, phthalic acid liver and acrylic acid 2 propylene-based half vinegar compound and propylene oxide reaction (Japanese catalyst chemical manufacturing 'commodity name _ £ _ _ 2 〇 〇), 4_n-octylphenoxypentapropanediol propylene glycol _, 2, 2 bis [{4_(methyl) propylene oxide ethoxypoly ethoxy] phenyl] propyl, 2, 2 _ Double {(4. acetamidooxypolyethoxy)cyclohexyl}propyl, 2,2-bis U4_methylpropenyloxypolyethoxy)cyclohexyl}propane, 1,6-hexyl Glycol (methyl Acrylate, hydrazine, 4_cyclohexanediol di(meth) acrylate, polypropylene glycol di(meth) acrylate, polyethylene glycol bis-(meth) propylene fluorene oxime, polyoxyethylene polyoxypropylene a polyoxyalkylene glycol di(indenyl)acrylate such as diol di(meth)acrylate, 2_bis(p-hydroxyphenyl)propane di(meth)acrylate, glycerol tri(meth)acrylate, a polyfunctional (meth) acrylate containing a urethane group (for example, a urethane compound of hexamethylene diisocyanate and pentapropylene glycol monoester acrylate), and The polyfunctional (fluorenyl) acrylate of the cyanurate compound. These may be used alone or in combination of two or more. In view of the developability, the addition polymerizable monomer (b) contains at least one of the polymerizable monomers of the compound group represented by the following formula (v): 134399.doc -18-200919085. A preferred embodiment of the invention. , [Chemical 9] 0 ο C^~〇)^CH2CH-〇}^C2H^〇)_11_C_Ch? (wherein R and R9 represent the chlorine atom or methyl group independently. ^ and the integer, t2 is 4~20 Integer.) ' r , · (ν) As a small-sized addition polymerizable monomer selected from the group of compounds represented by the above formula (V),

列如可列舉:四丙二醇二(甲基)兩、 酸酉日、七丙二薛—γ田 J 知一(甲基)丙烯酸酯、壬基丙二酵二 丙烯酸酯、十五而-辟ν Ύ^ 一知一(甲基)丙烯酸酯、於六丙二薛 兩端加成二乙-醇所彡日 " s, 一酵所侍的二(甲基)丙烯酸酯,於十_ 醉之兩端加成二r-結β 丁一两- 明中,選白、 寻的二(甲基)丙稀酸醋。於本1 以上述通式(ν)所表示之化合物群中的至,丨、 種加成聚合性單體之县4似 至夕- 5 3… 對於感光性樹脂組合物整體i 5〜30質量%,係較 〇蹩體^ ^ ^ 實施態樣。就解像性、密著性、. 衫性之觀點而言,加成聚合性單體之…1 … 早體之1較好的是5暂县。For example, four propylene glycol di(methyl) two, acid hydrazine, seven propylene disulfide - γ field J zhiyi (meth) acrylate, decyl propylene diacetate diacrylate, fifteen Ύ^ 一知一(M) acrylate, added to the two-co-alcohol at the two ends of the hexamethylene disulfide, " s, a di(meth) acrylate of the yeast, in the ten _ drunk The two ends are added with two r-segments, β-d-two-bright, and white (see) di-(meth)acrylic acid vinegar is selected. In the compound group represented by the above formula (ν), the oxime, the seed-addition polymerizable monomer of the county 4 is similar to the eve- 5 3... The photosensitive resin composition as a whole i 5 to 30 mass %, is compared to the body ^ ^ ^ implementation. In terms of resolution, adhesion, and shirtiness, the addition of a polymerizable monomer is ... 1 ... The early 1 is preferably 5 temporary county.

上’就顯影性之觀點而言,較好 L 好的範圍為5〜25質量%,進:資篁%以下。更 本發明之感光性樹脂粗=中好的範圍為5〜2〇質量%。 ㈨之量相對於感光性樹腊:八物:含的加成聚合性單體 圍’更好的範圍為15〜7〇質量;體為5〜75質量。/。之範 時間延遲之觀點而言,,曰益”就抑制硬化不良及顯影 &為5質量%以上,另外,就抑 134399.doc 19. 200919085 制冷流及硬化阻劑之剝離延遲之觀點而言,該量 %以下。 貞篁 於本發明之感光性樹脂組合物中,就解像度以及蝕刻液 耐性之觀點而言,每100 g之感光性樹脂組合物中所含的 加成聚合性單體⑻的末端乙稀性不飽和基(反應性末端基) 之莫耳數為0.10〜〇.4〇,係較好之實施態樣。 此處,所謂末端乙烯性不飽和基(反應性末端基),係指 加成聚合性單體之結構中藉自光聚合性起始齊j而產生光聚 合之活性基,表示丙烯基及曱基丙烯基。 該值較好的是0.10以上,以可將曝光後之交聯密度保持 為較高,抑制顯影時之膨潤,保持解像性、密著性,且蝕 xj時不會產生蝕刻液自阻劑線底面滲入而引起銅線搖擺等 問題,且上述值較好的是0 40以下以將交聯密度保持為 適度之高度,且硬化膜之柔軟性不會降低。上述值之更好 範圍為G.12〜G_35,進而更好的範圍為G 15〜〇3〇。 (c)光聚合起始劑 作為本發明中所使用之光聚合起始劑(c),就高解像度之 觀點而言,包含以下述通式(IV)所表示之至少一種2,4,5-三 芳基咪唑二聚物係較好之實施態樣。 134399.doc •20. 200919085 [化 ίο]From the viewpoint of developability, a good range of L is preferably 5 to 25% by mass, and is less than or equal to % by weight. Further, the photosensitive resin of the present invention has a coarseness = a good range of 5 to 2% by mass. (9) The amount is relative to the photosensitive tree wax: eight substances: the addition polymerization polymer monomer contains a better range of 15 to 7 〇 mass; the body is 5 to 75 mass. /. From the viewpoint of the time delay, the "benefit" suppresses the hardening failure and the development & is 5% by mass or more, and in addition, the viewpoint of the peeling delay of the cooling flow and the hardening resist is 134399.doc 19. 200919085 In the photosensitive resin composition of the present invention, the addition polymerizable monomer (8) is contained per 100 g of the photosensitive resin composition from the viewpoint of resolution and etching liquid resistance. The molar number of the terminal ethylenically unsaturated group (reactive terminal group) is 0.10 to 〇.4 〇, which is a preferred embodiment. Here, the terminal ethylenically unsaturated group (reactive terminal group) , the active group which generates photopolymerization by the photopolymerization initiation in the structure of the addition polymerizable monomer, and represents a propenyl group and a mercaptopropenyl group. The value is preferably 0.10 or more, so that The cross-linking density after exposure is kept high, the swelling during development is suppressed, the resolution and the adhesion are maintained, and the etching liquid does not cause the penetration of the etching liquid on the bottom surface of the resist line, causing the copper wire to sway, and the like. The above values are preferably below 0 40 to crosslink The density is maintained at a moderate height, and the softness of the cured film is not lowered. The above range of values is preferably G.12 to G_35, and more preferably G 15 to 〇3 〇. (c) Photopolymerization initiation The photopolymerization initiator (c) used in the present invention contains at least one 2,4,5-triarylimidazole dimer represented by the following formula (IV) from the viewpoint of high resolution. A better implementation. 134399.doc •20. 200919085 [化ίο]

f 烧基及炫氧基、以及i!基所組成之群中a %數為1至5之 r分別獨立為1〜5之整數)。 的種基,P、q及 於以上述通式(IV)所表示之化合㈣ 之共價鍵可接於1,1,-、i 2,_、7 , 鍵、,,。2個咯吩基 上,較好的是該共價鍵接於丨,2,、位,…2’4’-或4,4,-位 芳基咪唑二聚物例如有2_(鄰氣 之化合物。2,4,5-三 u 物、2-(鄰氯苯基)_4 5 田土 _4,5·二苯基咪唑二聚 ㈣基苯基)-二= 甲氧基苯基如二聚物、 於本發明之感光性樹骑物° 所表示之至少一種2,45__ —物令,含有以上述通式(IV) 好的是(Μ〜20質量% *基味唾二聚物時,其比例較 該比例為0.1質量%以上〔解像性以及密著性之觀點而言’ 例為20質量。/。以下。 ’、肩如凝聚性之觀點而言,該比 好的範圍為0.5〜15質量%,進而更 134399.doc >21. 200919085 好的範圍為1〜1 0質量〇/〇。 作為本發明中所使 上i#、、S 〜,較好的是將以 其()所表示之2,4,5-三芳基咪嗤二聚物與對胺基苯 基酮併用。作為對胺基苯基,,例如可列舉:對胺基二— 甲酮、對丁基胺基苯乙網、對二甲基胺基苯乙酮、::; 基胺基二苯甲’、P,P’-雙(乙基胺基)二苯甲酮、p,p、雙(二 甲基胺基)二苯甲酮(別名:米其勒酮)、p,p,_雙(丄乙基: 基)二苯甲嗣、p,p'·雙(二丁基胺基)二苯甲_。 另外,與吡唑啉化合物、例如丨_苯基_3_(4_第三丁基-苯 乙烯基)-5-(4·第三了基-苯基)_口比哇琳併用亦係較好之 形態。 另外,除以上所示之化合物之光聚合起始劑以外,亦可 併用其他光聚合起始劑。此處之光聚合起始劑係指可藉由 各種活性光線、例如紫外線等而活化,從而開始進行二合 之化合物。 - 其他的光聚合起始劑有:醌類,例如乙基蒽醌、2_第 三丁基蒽醌;芳香族酮類,例如二苯甲酮、安息香;安泉 香醚類,例如安息香曱㉚、安息香乙醚;吖啶化合物,: 如9-苯基吖啶、苄基二甲基縮酮、苄基二乙基縮酮。 另外,例如亦可使用噻噸酮、2,4_二乙基噻噸_、2-氯 噻噸酮等噻噸鲷類與二甲基胺基苯甲酸烷基酯化合物等三 級胺化合物之組合。 另外,可使用肟酯類,例如丨_苯基丙二酮_2_0_笨甲 醯基肟、1-苯基-:1,2-丙二酮_2_(〇_乙氧基羰基)厢。另外, I34399.doc •22- 200919085 亦可使用N-芳基-α -胺基酸化合物,該等之中,特別好的 是Ν-苯基甘胺酸。 本發明中之光聚合起始劑(c)之比例為0.01〜30質量%。 若該比例未達〇·〇1質量。/。,則無法獲得充分之感度。另 外’若該比例超過30質量%,則曝光時容易由於通過光罩 之光之繞射而產生灰霧,結果導致解像性惡化。光聚合起 始劑(e)之含量更好的是0.1〜15質量%,進而更好的是 0.1〜10質量%。f The group consisting of a base and a methoxy group, and an i! group, wherein a % is 1 to 5, r is independently an integer of 1 to 5). The seed group, P, q and the covalent bond of the compound (IV) represented by the above formula (IV) can be bonded to 1, 1, -, i 2, _, 7, bond, and . Preferably, the two conjugated groups are covalently bonded to oxime, 2, a position, ... 2'4'- or 4,4,-position aryl imidazole dimer, for example, 2_(o. Compound. 2,4,5-tri-u, 2-(o-chlorophenyl)_4 5 field _4,5·diphenylimidazodimeric (tetra)phenyl)-di-methoxyphenyl such as dimerization At least one of 2,45__, which is represented by the photosensitive tree rider of the present invention, is preferably (Μ~20% by mass of the base taste salic dimer) The ratio is 0.1% by mass or more in terms of the ratio (in the viewpoint of resolution and adhesion), the example is 20 mass% or less. ', shoulders such as cohesiveness, the ratio is preferably 0.5. ~15% by mass, and further 134399.doc >21. 200919085 The preferred range is 1 to 1 0 mass 〇 / 〇. As the present invention, i#, S 〜 is preferably used as The 2,4,5-triaryldione dimer represented by the combination is used in combination with a p-aminophenyl ketone. As the p-aminophenyl group, for example, p-amino ketone or p-butylamine can be mentioned. Alkyl phenyl net, p-dimethylamino acetophenone,::; Bis-Butyl', P, P'-bis(ethylamino)benzophenone, p,p, bis(dimethylamino)benzophenone (alias: mazakirone), p, p, _ bis (indolyl: yl) benzophenone, p, p' bis (dibutylamino) benzophenone _. In addition, with pyrazoline compounds, such as 丨 phenyl _ 3 _ ( 4_Tertiary-styryl)-5-(4·Terylene-phenyl)--------------------------------------------------------- In addition to the initiator, other photopolymerization initiators may be used in combination. The photopolymerization initiator herein refers to a compound which can be activated by various active light rays such as ultraviolet rays to start the dimerization. Starting agents are: anthracene, such as ethyl hydrazine, 2_t-butyl hydrazine; aromatic ketones, such as benzophenone, benzoin; amphibians, such as benzoin 30, benzoin ethyl ether; Acridine compound, such as: 9-phenyl acridine, benzyl dimethyl ketal, benzyl diethyl ketal. Further, for example, thioxanthone, 2,4-diethyl thioxan _, Thiophene oxime such as 2-chlorothioxanthone Combination with a tertiary amine compound such as an alkyl dimethyl benzoate compound. Further, an oxime ester such as 丨 phenyl propyl diketone 2 _2 _ 醯 醯 肟 肟 肟, 1-phenyl- can be used. : 1,2-propanedione_2_(〇-ethoxycarbonyl). In addition, I34399.doc •22- 200919085 can also use N-aryl-α-amino acid compounds, among which special Preferably, the ratio of the photopolymerization initiator (c) in the present invention is 0.01 to 30% by mass. If the ratio is less than 质量·〇1, the product cannot be sufficiently obtained. Sensitivity. Further, when the ratio exceeds 30% by mass, fogging is likely to occur due to diffraction of light passing through the photomask during exposure, and as a result, the resolution is deteriorated. The content of the photopolymerization initiator (e) is more preferably 0.1 to 15% by mass, still more preferably 0.1 to 10% by mass.

(d)其他成分 為表現出曝光後之對比度(曝光部與未曝光部之區別), 本發明之感光性樹脂組合物中可含有無色染料。含有無色 染料時之含量較好的是〇」〜〗〇質量%。作為此種無色染 料,可列舉:三(4_二甲基胺基-2-曱基苯基)甲烷(別名:無 色結晶紫)、三(4-二甲基胺基曱基苯基)曱烷(別名:無 色孔癌綠)、癸烧染料。其中M吏用無色結晶紫之情形時 對比度良好,故而較好。 就密著性以及對比度之翻 丄 之覜點而&,於感光性樹脂組合物 中組合使用上述益#绝&上,, a 巴本枓與_化物,係本發明之較好實施 作為鹵化物,例如$丨I ^ > 〉臭戊烷、演異戊烷、漠化異 丁烯、溴化乙烯 '二笨甲其 本甲基漠、二溪甲苯、二演甲烷、三 /臭甲基本基石風、四溴介山 条ή /昊化妷、磷酸三(2,3-二溴丙基)酯、三 氣乙醯胺、埃戊貌、昱丁I α .W , z、丁基碘、丨,1,1-三氯-2,2-雙(對氣苯 丞)乙烷、六氯乙烷、忐仆a 二嗪化合物。作為該_化三嗪 134399.doc -23· 200919085 嗪 :_(4-甲氧 化合物,可列舉:2,4,6-三(三氯甲基)_均 基苯基)-4,6-雙(三氯甲基)-均三嗪。 當含有_化物時’感光性樹脂組合物中之_化物之含, 較好的是〇.〇1〜1〇質量%。 置 為提昇感光性樹脂組合物之操作性,除上述無色染料以 外亦可添加著色物質。作為此種著色物質’例如可列舉: 一品紅、欧菁綠、金黃胺驗、對品紅、結晶紫、甲基撥、 尼祿藍2Β、維多利亞藍、孔雀綠(保土谷化學⑷^之(d) Other components In order to exhibit the contrast after exposure (the difference between the exposed portion and the unexposed portion), the photosensitive resin composition of the present invention may contain a leuco dye. When the colorless dye is contained, the content is preferably 〇"~"〇% by mass. As such a leuco dye, tris(4-dimethylamino-2-mercaptophenyl)methane (alias: colorless crystal violet), tris(4-dimethylaminodecylphenyl)anthracene Alkane (alias: colorless hole cancer green), smoldering dye. Among them, when M is used as a colorless crystal violet, the contrast is good, so that it is preferable. In combination with the adhesion and the contrast of the contrast, it is preferred to use the above-mentioned benefits in combination with the above-mentioned benefits in the photosensitive resin composition. Halides, such as $丨I ^ > 〉 odor pentane, exemplification of isopentane, desertification of isobutylene, ethylene bromide, bismuth, methylation, dioxin, dioxin, methane, tris Base stone wind, tetrabromo-mediated scorpion strontium / strontium sulphate, tris(2,3-dibromopropyl) phosphate, triethylene acetamide, eugenol, saponin I α .W , z, butyl iodine, Indole, 1,1-trichloro-2,2-bis(p-benzoquinone)ethane, hexachloroethane, hydrazine a diazine compound. As the 1,3-triazine 134399.doc -23· 200919085 azine: _ (4-methoxy compound, may be mentioned: 2,4,6-tris(trichloromethyl)_homoylphenyl)-4,6- Bis(trichloromethyl)-s-triazine. When the content of the compound in the photosensitive resin composition is contained, it is preferably 〇1 to 1% by mass. In order to improve the handleability of the photosensitive resin composition, a coloring matter may be added in addition to the above leuco dye. As such a coloring material, for example, poinsettia, acesulfame green, golden amine test, p-magenta, crystal violet, methyl dial, Nero blue 2, Victoria blue, malachite green (Budong Valley Chemistry (4) ^

ΑΙΖΕΝ(註冊商標)MALACHITE green)、驗性藍2〇、鑽石 綠(保土谷化學(股)製造之AIZEN(註冊商標)mAM〇ND GREEN GH)。 含有上述著色物質時,上述著色物f在感光性樹脂组合 物中之添加量較好的是G.GG1〜lf量%。當上述著色物質之 含量為0.001量%以上時,有操作性提昇之效果,若含量 為1質量%以下,則有維持保存穩定性之效果。 其中’三溪甲基苯基砜與無色染料之組合、三嗪化合物 與無色染料之組合較為有用。 另外’為提昇本發明之感光性樹脂組合物之熱穩定性' 保存穩定性,較好的是,使感光性樹脂組合物中含有選自 下述群中的至少一種以上之化合物,該群係由自由基聚合 抑制劑、苯并三㈣、以職基苯并Μ類所組成。 作為此種自由基聚合抑制劑’例如可列舉:對甲氧基笨 酚、對苯二酚、鄰苯三酚、萘胺、第三丁基兒茶酚、氯化 亞銅、2’6-二·第三丁基_對曱紛、2,2、亞甲基雙⑷甲基i 134399.doc -24· 200919085 第三丁基苯酚)、2,2’-亞甲基雙(4·乙基_6_第三丁基苯酚)、 亞硝基苯基經基胺銘鹽、以及二苯基亞硝基胺。 另外,作為苯并三唑類,例如可列舉:丨,2,3_笨并二 嗤、1-氣-I’2,3-苯并三嗤、雙(N_2_乙基己基)胺基亞甲基-1,2’3-苯并三唑、雙(N-2-乙基己基)胺基亞曱基],2,3-甲笨 基三唑、以及雙(N-2-經基乙基)胺基亞甲基_】,2,3_苯并三 σ坐〇 另外,作為羧基笨并=唑赭,办丨l π ,伽 开一生類,例如可列舉:4-羧基_ 1,2,3 -苯并三。坐、5 -叛基-1 2 3-贫丑- ,AJ 本并二唑、Ν-(Ν,Ν·二-2-乙 基己基)胺基亞甲基羧基苯并二唾 开—里Ν-(Ν,Ν-二-2-羥基乙 基)胺基亞甲基羧基笨并三唑、 以及Ν-(Ν,Ν-二-2-乙基? 基)胺基伸乙基羧基苯并三唾。 u 自由基聚合抑制劑、苯并= ,L , 坐類、以及羧基苯并三唑類 之a計添加量較好的是〇 〇1 θ 質置/〇,更好的是0 05〜1暂 罝%。就對感光性樹脂組合 質 守勿賦予保存穩定性 言,該量較好的是〇.〇1質量 " '、而 觀點而言,該量更好的曰 3外’就維持感度之 尺好的疋3質量%以下。 本發明之感光性樹脂組合 此種增塑劑,例如可列兴 而要含有增塑劑。作為 牛· 聚乙二醇 取工 ^ 烯聚氧乙烯醚、聚氧& 、聚丙二醇、聚氧丙 γ孔G旆早甲醚、 乙烯聚氧丙烯單甲醚、 取乳丙烯早甲醚、聚氧 醚、聚氧乙烯聚氧丙埽 _早乙醚、聚氧丙烯單乙 二乙酯等鄰苯二曱酸 —醇、酯類,鄰苯二甲酸 酿、乙醯檸檬酸三乙酿、 胺、擰檬酸三丁酯、檸檬酸=乙本飧酸胺、對甲苯磺醯 J34399.doc -25- 200919085 乙醯擰檬酸三正丙酯、乙醯檸檬酸三正丁酯。 作為含有增塑劑時增塑劑之量,較好的是在感光性樹脂 組合物中占5〜50質量%,更好的是5〜3〇質量%。就抑制顯 影時間延遲'或對硬化膜賦予柔軟性之觀點而言較好的 是5質量%以上,另外,就抑制硬化不足或冷流之觀點而 言’較好的是50質量%以下。 <感光性樹脂組合物調配液> 可於本發明之感光性樹脂組合物中添加溶劑而形成感光 性樹脂組合物調配液。作為適合之溶劑,可列舉以甲基乙 基酮(MEK)為代表之酮類’甲醇、乙醇及異丙醇等醇類。 較好的疋,以使感光性樹脂組合物調配液之黏度於2 5。〇下 為500〜4000 mPa . seCi方式於感光性樹脂組合物中添加溶 劑。 <感光性樹脂積層體> 本發明之感光性樹脂積層體係由感光性樹脂層以及支持 該層之支持體所構成,視需要亦可於感光性樹脂層之與支 持體相反之側的表面上具有保護層。 此處所使用之支持體,較理想的是可使由曝光用光源所 放射之光透射的透明支持體。此種支持體可列舉:聚對苯 二甲酸乙二酯膜、》乙烯醇膜、聚氯乙烯膜、氣乙烯共聚 物臈 '聚偏二氯乙烯膜、偏二氯乙烯共聚膜、#甲基丙烯 酸甲酯共聚物臈、聚苯乙烯膜、聚丙烯腈膜、#乙烯共聚 物膜、聚醯胺膜、以及纖維素衍生物膜等。該等膜亦可使 用視需要而加以延伸者。霧度較好的是5以下。至於膜之 134399.doc •26- 200919085 厚又田膜較薄時於圖像形成性及經濟性方面較為有利, 然由於必須维持強度等,故較好的是1〇〜3〇㈣。 、另外1光性樹脂積㈣巾所使狀㈣層之重要特性 為相較於支持體,保護層與感光性樹脂層之密著力足夠 小從而可谷易地剝離。例如,可較好地使用聚乙稀膜、及 聚丙烯膜等作為保護層。另外,可使用日本專利特開昭 59-202457號公報中所記載的剝離性優異之膜。保護層之 膜厚較好的是,更好的是1G〜5G_。 θ 本發明之感光性樹脂積層體中之感光性樹脂層之厚度較 好的疋5〜1〇〇 ’,更好的是5〜5〇,。感光性樹脂層之厚 度越薄則解像度越高,另外,厚度越厚則膜強度越高故 可根據用途來適當選擇厚度。 將支持體、感光性樹脂層、以及視需要之保護層依序積 層而製作本發明之感光性樹脂積層體的方法,可採用先前 眾所周知之方法。例如,可預先將感光性樹脂層所使用之 感光性树脂組合物製備成上述感光性樹脂組合物調配液, 首先使用棒塗機或輕塗機將該調配液塗佈於支持體上並乾 燥’從而於支持體上積層由該《光性樹脂組合物所形成之 感光性樹脂層。繼而,視需要於該感光性樹脂層上積層保 遵層’藉此可製成感光性樹脂積層體。 <阻劑圖案形成方法> 使用本發明之感光性樹脂積層體之阻劑圖案,可藉由包 括層壓步驟、曝光步驟、以及顯影步驟的步驟而形成。以 下表示具體方法之一例。 134399.doc -27- 200919085 首先,使用貼合機進行層壓步驟。若感光性樹脂積層體 具有保護層,則在剝離保護層之後,使用貼合機將感光性 樹脂層加熱壓接於基板表面並進行層壓。此時,感光性樹 脂層可僅層壓於基板之單個表面上,視需要亦可層壓於兩 面上。此時之加熱溫度通常為40M 60它。另外,藉由進行 兩次以上該加熱壓接,所獲得之阻劑圖案對基板之密著性 提高。此時’可使用具備雙聯輥的兩段式貼合機來進行壓 接’亦可使感光性樹脂層反覆通過輥幾次來壓接。 接著,使用曝光機進行曝光步驟。視需要可剝離支持體 並通過光罩利用活性光進行曝光。曝光量係根據光源照度 及爆光時間來決定。可使用光量計測定曝光量。 於曝光步驟中,亦可採用無光罩曝光方法。無光罩曝光 係不使用光罩而於基板上利用直接刻寫裝置來進行曝光。 作為光源,可使用波長為35〇〜41〇 nm之半導體雷射或超高 壓水銀燈等。刻寫之圖案係由電腦所控制,此時之曝光量 係由曝光用光源之照度以及基板之移動速度而決定的。 然後,使用顯影裝置進行顯影步驟。若曝光後感光性樹 脂層上存在支持體,則將該支持體除去。接著,使用由鹼 性水溶液所構成之顯影液將未曝光部顯影除去,獲得阻劑 圖像。作為鹼性水溶液,較好的是Na2C〇34K2C〇3之水溶 液4等可配合感光性樹脂層之特性加以選擇,通常使用 濃度為0.2〜2質量%iNa2C〇3水溶液。於該鹼性水溶液中 亦可扣入界面活性劑、消泡劑、用以促進顯影之少量有機 /奋齊丨等另外,顯影步驟中之該顯影液之溫度較好的是, i34399.doc •28· 200919085 將其保持為20〜40°C之範圍内之固定溫度。 藉由上述步驟可獲得阻劑圖案,然視需要亦可進 行1〇0〜3〇〇°C之加熱步驟。藉由實施該加熱步驟,可進_ ^提昇耐化學性°加熱可㈣熱風、紅外線、或遠紅外線 荨方式之加熱爐。 <印刷電路板之製造方法> ,本發明之印刷電路板之製造方法,係藉由上述阻劑圖案 形成方法於作為基板之銅箱積層板或可撓性基板上形成阻 劑圖案之後,經由以下之步驟而製造印刷電路板。 首先進行如下步驟:使用姓刻法或鑛敷法等已知之方 法,於藉由顯影而露出之基板之銅面上形成導體圖案。MAL (registered trademark) MALACHITE green), blue test 〇 2, diamond green (AIZEN (registered trademark) mAM 〇 ND GREEN GH manufactured by Hodogaya Chemical Co., Ltd.). When the coloring matter is contained, the amount of the coloring matter f added to the photosensitive resin composition is preferably G.GG1 to lf%. When the content of the coloring matter is 0.001% by weight or more, the effect of improving the workability is obtained, and when the content is 1% by mass or less, the storage stability is maintained. Among them, the combination of 'Sanxi methyl phenyl sulfone and a leuco dye, and a combination of a triazine compound and a leuco dye are useful. In addition, in order to improve the thermal stability of the photosensitive resin composition of the present invention, it is preferred that the photosensitive resin composition contains at least one or more compounds selected from the group consisting of the following groups. It consists of a free radical polymerization inhibitor, benzotri(tetra), and an benzopyrene. Examples of such a radical polymerization inhibitor include p-methoxy phenol, hydroquinone, pyrogallol, naphthylamine, t-butyl catechol, cuprous chloride, 2'6- 2. Ternary butyl _ 曱 、, 2, 2, methylene bis (4) methyl i 134399.doc -24 · 200919085 third butyl phenol), 2, 2 '- methylene double (4 · B Base_6_t-butylphenol), nitrosophenyl group by imide salt, and diphenylnitrosamine. Further, examples of the benzotriazoles include ruthenium, 2,3-stuppyrene, 1-gas-I'2,3-benzotriazine, and bis(N_2-ethylhexyl)aminone. Methyl-1,2'3-benzotriazole, bis(N-2-ethylhexyl)aminoindenyl], 2,3-methylphenyltriazole, and bis(N-2-yl) Ethyl)aminomethylene _], 2,3_benzotriazine 〇 〇 〇 〇 作为 〇 〇 〇 羧基 羧基 羧基 羧基 羧基 羧基 羧基 赭 赭 赭 , , , , , , , , , , , , , , , , , , , , , , , , 2,3 - benzotriene. Sit, 5-rebel-1 2 3-poor ugly, AJ benzodiazole, Ν-(Ν,Ν·2--2-ethylhexyl)aminomethylene carboxy benzo benzopyrene-Li -(Ν,Ν-di-2-hydroxyethyl)aminomethylenecarboxyl stupid and triazole, and Ν-(Ν,Ν-di-2-ethyl-yl)amine-based ethyl carboxybenzotrien saliva. u The free radical polymerization inhibitor, benzo-, L, sitin, and carboxybenzotriazole are better than the 〇〇1 θ texture/〇, more preferably 0 05~1罝%. In the case of the photosensitive resin composition, it is better to give a storage stability. The amount is preferably 〇.〇1 quality" ', and from the point of view, the amount is better than the 曰3 outside, the sensitivity is good.疋 3 mass% or less. Combination of Photosensitive Resin of the Present Invention Such a plasticizer may, for example, contain a plasticizer. As a bovine polyethylene glycol, it is a polyoxyethylene ether, a polyoxyl ether, a polypropylene glycol, a polyoxypropylene gamma pore G 旆 early methyl ether, an ethylene polyoxypropylene monomethyl ether, a milk propylene early methyl ether, Polyoxyethylene ether, polyoxyethylene polyoxypropylene hydrazine 早 early diethyl ether, polyoxypropylene monoethyl diethyl ester and other phthalic acid-alcohol, ester, phthalic acid brewing, acetonitrile triacetate, amine , tributyl citrate, citric acid = ethyl decanoate, p-toluene sulfonate J34399.doc -25- 200919085 tri-n-propyl citrate, tri-n-butyl citrate. The amount of the plasticizer in the case of containing a plasticizer is preferably from 5 to 50% by mass, more preferably from 5 to 3% by mass, based on the photosensitive resin composition. From the viewpoint of suppressing the development time delay or imparting flexibility to the cured film, it is preferably 5% by mass or more, and more preferably 50% by mass or less from the viewpoint of suppressing insufficient hardening or cold flow. <Photosensitive resin composition preparation liquid> A photosensitive resin composition preparation liquid can be formed by adding a solvent to the photosensitive resin composition of the present invention. The solvent to be used is, for example, a ketone represented by methyl ethyl ketone (MEK), an alcohol such as methanol, ethanol or isopropyl alcohol. Preferably, the viscosity of the photosensitive resin composition preparation liquid is 25. The underside is 500 to 4000 mPa. The seCi method adds a solvent to the photosensitive resin composition. <Photosensitive Resin Laminate> The photosensitive resin laminate system of the present invention is composed of a photosensitive resin layer and a support supporting the layer, and may be provided on the surface of the photosensitive resin layer opposite to the support as needed. There is a protective layer on it. The support used herein is preferably a transparent support which can transmit light emitted from the light source for exposure. Such a support may, for example, be a polyethylene terephthalate film, a vinyl alcohol film, a polyvinyl chloride film, a gas ethylene copolymer, a poly(vinylidene chloride) film, a vinylidene chloride copolymer film, a #methyl group. A methyl acrylate copolymer ruthenium, a polystyrene film, a polyacrylonitrile film, an #ethylene copolymer film, a polyamide film, and a cellulose derivative film. These films may also be extended as needed. The haze is preferably 5 or less. As for the film 134399.doc •26- 200919085 Thick and thin film is more advantageous in terms of image formation and economy, but since it is necessary to maintain strength, etc., it is preferably 1〇~3〇(4). In addition, the important characteristic of the (four) layer of the light-sensitive resin product is that the adhesion between the protective layer and the photosensitive resin layer is sufficiently small to be easily peeled off. For example, a polyethylene film, a polypropylene film or the like can be preferably used as the protective layer. Further, a film having excellent releasability as described in JP-A-59-202457 can be used. The film thickness of the protective layer is preferably 1 G to 5 G_. θ The thickness of the photosensitive resin layer in the photosensitive resin laminate of the present invention is preferably 疋5 to 1 〇〇 ', more preferably 5 to 5 Å. The thinner the thickness of the photosensitive resin layer, the higher the resolution, and the thicker the thickness, the higher the film strength, so that the thickness can be appropriately selected depending on the application. A method of producing the photosensitive resin laminate of the present invention by sequentially laminating a support, a photosensitive resin layer, and an optional protective layer can be carried out by a conventionally known method. For example, the photosensitive resin composition used for the photosensitive resin layer can be prepared in advance as the photosensitive resin composition preparation liquid, and the preparation liquid is first applied to a support and dried by a bar coater or a light coater. Thus, a photosensitive resin layer formed of the "photosensitive resin composition" is laminated on the support. Then, a layer of the protective layer is laminated on the photosensitive resin layer as needed to form a photosensitive resin laminate. <Resist Pattern Formation Method> The resist pattern using the photosensitive resin laminate of the present invention can be formed by a step including a lamination step, an exposure step, and a development step. The following shows an example of a specific method. 134399.doc -27- 200919085 First, the lamination step is performed using a laminator. When the photosensitive resin laminate has a protective layer, after the protective layer is peeled off, the photosensitive resin layer is heated and pressure-bonded to the surface of the substrate by a bonding machine and laminated. At this time, the photosensitive resin layer may be laminated only on a single surface of the substrate, and may be laminated on both sides as needed. The heating temperature at this time is usually 40M 60. Further, by performing the thermocompression bonding twice or more, the adhesion of the obtained resist pattern to the substrate is improved. At this time, the pressure can be applied by using a two-stage laminator having a double roll. The photosensitive resin layer can also be pressed against the roll several times by pressure. Next, an exposure step is performed using an exposure machine. The support can be peeled off as needed and exposed by active light through a photomask. The amount of exposure is determined by the illumination of the light source and the exposure time. The amount of exposure can be measured using a light meter. In the exposure step, a maskless exposure method can also be employed. Maskless Exposure Exposure is performed on a substrate using a direct writing device without using a mask. As the light source, a semiconductor laser or an ultra-high pressure mercury lamp having a wavelength of 35 〇 to 41 〇 nm can be used. The pattern to be written is controlled by a computer, and the exposure amount at this time is determined by the illumination of the light source for exposure and the moving speed of the substrate. Then, the developing step is performed using a developing device. If a support is present on the photosensitive resin layer after exposure, the support is removed. Next, the unexposed portion was developed and removed using a developing solution composed of an aqueous alkaline solution to obtain a resist image. As the alkaline aqueous solution, it is preferred that the aqueous solution 4 such as Na2C〇34K2C〇3 can be selected in combination with the characteristics of the photosensitive resin layer, and an aqueous solution of Na2C〇3 having a concentration of 0.2 to 2% by mass is usually used. In the alkaline aqueous solution, a surfactant, an antifoaming agent, a small amount of organic/exciting agent for promoting development, etc. may be added. Further, the temperature of the developing solution in the developing step is preferably i34399.doc • 28· 200919085 Maintain it at a fixed temperature in the range of 20 to 40 °C. The resist pattern can be obtained by the above steps, and a heating step of 1 〇 0 〜 3 〇〇 ° C can be carried out as needed. By carrying out the heating step, it is possible to enhance the chemical resistance by heating (4) a hot air, infrared, or far infrared ray type heating furnace. <Manufacturing Method of Printed Circuit Board> The method of manufacturing a printed circuit board according to the present invention, after forming a resist pattern on a copper box laminate or a flexible substrate as a substrate by the above-described resist pattern forming method A printed circuit board is manufactured through the following steps. First, the following steps are carried out: a conductor pattern is formed on the copper surface of the substrate exposed by development using a known method such as a surname method or a mineral deposit method.

U 然後進行剝離步驟,即,㈣驗㈣於顯景彡液之水溶液 將阻劑圖案自基板上剝離,從而獲得所需之印刷電路板。 ㈣用之鹼性水溶液(以下亦稱為「剝離液」)並無特別限 疋,通常使用濃度為2〜5質量%之他(^或K〇H之水溶、夜。 剝離液中亦可添加少量之水溶性溶劑。另外,剝離步驟中 之该剝離液之溫度較好的是4〇〜7〇(>c之範圍。 <引線框架之製造方法> 、本發明之引線框架之製造方法,係藉由上述阻劑圖案形 成方法於作為基板之銅、銅合金、或鐵系合金等之金屬板 上形成阻劑圖案之後’經由以下之步驟而製造引線框架。 首先’進行對藉由顯影而露出之基板進行㈣而形成導 體圖案的步驟。然後進行剝離步驟,即,以與上述印刷電 路板之製造方法相同之方法將阻劑圖案剝離,從而獲得所 134399.doc 29· 200919085 需之引線框架。 <半導體封裝之製造方法> 本發明之半導體封裝係藉由如下方式而製造:藉由以下 之步驟對已形成有作為LSI(大型積體電路’ large_scaie integration)之電路的晶片進行封裝。 首先,對藉由顯影而獲得之附著有光阻圖案之基材上的 基材金屬露出的部分進行硫酸銅鍍敷,形成導體圖案。然 後進行剝離步驟,即,以與上述印刷電路板之製造方法相U then proceeds to a stripping step, i.e., (d) inspection (d) to remove the resist pattern from the substrate in an aqueous solution of the sputum sputum to obtain the desired printed circuit board. (4) The alkaline aqueous solution (hereinafter also referred to as "peeling liquid") is not particularly limited, and it is usually used in a concentration of 2 to 5 mass% (^ or K〇H in water, night. The peeling liquid may also be added. Further, the temperature of the stripping liquid in the stripping step is preferably 4 〇 to 7 〇 (>c. <Production method of lead frame>, manufacture of lead frame of the present invention) In the method, after the resist pattern is formed on the metal plate of copper, copper alloy, or iron-based alloy as the substrate by the above-described resist pattern forming method, the lead frame is manufactured through the following steps. a step of forming a conductor pattern by developing the exposed substrate, and then performing a peeling step of peeling off the resist pattern in the same manner as in the above-described method of manufacturing the printed circuit board, thereby obtaining 134399.doc 29· 200919085 <Manufacturing Method of Semiconductor Package> The semiconductor package of the present invention is manufactured by the following steps: LSI (large integrated circuit 'large_) The wafer of the circuit of the scaie integration is packaged. First, the exposed portion of the base metal on the substrate to which the photoresist pattern is attached by development is subjected to copper sulfate plating to form a conductor pattern. Then, a peeling step is performed. That is, in accordance with the manufacturing method of the above printed circuit board

同之方法剝離阻劑圖案,進而,對柱狀鍍敷以外之部分進 行钱刻以除去薄金屬層,封裝上述晶#,獲得所需之半導 體封裝。 <凸塊之製造方法> 本發明之凸塊係用於封裝已形成有作為LSI之電路的晶 片’可藉由下述步驟而製造。 首先’對藉由顯影而獲得之附著有阻劑圖案之基材上的 基材金屬露出的部分進行硫酸銅鍍敷,形成導體圖案。然In the same manner, the resist pattern is peeled off, and further, a portion other than the columnar plating is etched to remove the thin metal layer, and the above-mentioned crystal # is packaged to obtain a desired semiconductor package. <Manufacturing Method of Bump> The bump of the present invention is used for encapsulating a wafer in which a circuit as an LSI has been formed, which can be manufactured by the following steps. First, a portion where the base metal on the substrate to which the resist pattern is attached by development is exposed is subjected to copper sulfate plating to form a conductor pattern. Of course

後進行剝離步驟,即,以盘μ H Ρ以與上述印刷電路板之製造方法相 同之方法剝離阻劑圖案’進而,進行藉由㈣I將柱狀鑛敷 以外之㈣之薄金制除去时驟,獲得所f之凸塊。 &lt;具有凹凸圖案之基材之製造方法&gt; 可將利用上述阻劑圖案形成方法所形成之阻劑圖宰,用 作藉由喷砂料騎實絲H護罩構件。” 作為基板,可列舉玻璃、石夕晶圓、非晶石夕、多晶石夕、陶 i34399.doc •30- 200919085 J = 金屬材料等。以與上述阻劑圖案形成方法相 方法在該等玻璃等之基板上形成阻劑圖案。然後,經 之阻劑圖案上噴附噴射材料而將基板切削至目 才示冰度之噴砂處理步驟、 及使用鹼性剝離液等將基板上 殘存之阻劑圖案部分自基 陈云之剥離步驟,可形成基 板上具有微細凹凸圖案之基材。上述喷砂處理步驟中所使 用之喷射材料可使用公知材料,例如可使用批、叫、 a12〇3、CaC03、ZrO、姑斑、τ ^ 妨 玻璃不鏽鋼4之粒徑為2〜1〇〇 左右之微粒。 上述利用噴砂法來製造具有凹凸圖案之基材之方法可 應用於平板顯示器之間隔壁之製造、有機肛 ⑽⑽ce,電致發光)之玻璃蓋加工、石夕晶圓之 開孔加工、以及陶究之排針加王等中。另外,可利用該方 法製造強介電膜以及選自由貴金屬、貴金屬合金、高:點 金屬及高熔點金屬化合物所組成之群中的金屬材料層之電 極0 [實施例] 以下,對本發明之實施形態之例加以具體說明。 (實施例1〜8、比較例1〜3 ) 首先,對實施例及比較例之評價用樣品之製作方法/ 說明,然後說明所獲得之樣品之評價方法及其評價結 1.評價用樣品之製作 ° 以如下方式製作實施例及比較例之評價用樣σ &lt;感光性樹脂積層體之製作&gt; 134399.doc -31 · 200919085 將下述表1所示$ έ Λ 分計之調θ、θ 各成分之數字表示以固形 搜拌、β/(f量份))的感光性樹脂組合物以及溶劑充分 二…獲得感光性樹脂組合物調配液,使用棒塗 :一以調配液均句地塗佈於作為支持體的16㈣厚之聚 2二二甲酸乙二醋膜之表面上’於95。°之乾燥機中乾煤 刀、形成感光性樹脂層。感光性樹脂層之厚度為25 μηι。 繼而,於感光性樹脂層之未積層聚對苯二甲酸乙二酯膜 表面上㉝合作為保護層之21㈣厚之聚乙烯膜,獲得 感光性樹脂積層體。 將表1中之簡略符號所表示的感光性樹脂組合物調配液 中之材料成分B-NDj之名稱示於下述表2中。 &lt;基板表面修飾&gt; 對積層有35 μηι之軋壓銅箔的〇4 mm厚之銅箔積層板表 面以0.20 MPa之喷霧壓力進行喷射刷磨(日本Carm(股)製 造,Sakurundum R(註冊商標)# 22〇),由此準備解像度、 密著性、底腳產生性以及耐鍍敷液性評價用基板。 &lt;層壓&gt; 一面將感光性樹脂積層體之聚乙烯膜剝離,一面使用熱 親貼合機(旭化成電子(股)製造,AL-70)以1〇5。(:之親溫度 於經表面修飾且預熱成6(TC之銅箔積層板上層壓感光性樹 脂積層體。空氣壓力係設為〇·35 MPa,層壓速度係設為i 5 m/min 〇 134399.doc •32- 200919085 使用鉻玻璃光罩,用超高壓水銀燈(Ushi〇電機股份有限 公司製造,投影曝光裝置UX2〇〇3SM-MS〇4),以120 mJ/cm2之曝光量進行丨線單色曝光。 &lt;顯影&gt; 將聚對苯二曱酸乙二酯膜剝離之後,使用3 〇。匸之i質量 %Na2C〇3水溶液進行特定時間噴霧,溶解除去感光性樹脂 層之未曝光部分。此時,將未曝光部分之感光性樹脂層完 全溶解所需要之最少時間設為最小顯影時間。 &lt;鍍敷前處理&gt; 將顯影後之耐鍍敷性評價基板於酸性脫脂FRX(丨〇%水溶 液’ Atotech Japan(股)製造)浴中於利艽下浸潰4分鐘。水 洗後’於10%硫酸水溶液中於室溫下浸潰2分鐘。 〈鑛敷硫酸銅&gt; 用19 wt°/。硫酸將硫酸銅濃縮物(Meltex(股)製造)稀釋成 3.6倍,添加濃鹽酸2〇〇卯111。繼而,以〇41111/1、2〇1111/1分 別添加作為光澤劑之Cupraeid HL及Cupracid GS。使用所 製備之硫酸銅鍍敷液,利用哈林槽(Haring Ceil)均勻鍍敷 裝置(山本鍍金試驗器股份有限公司製造),於施加電流為 0.4 A下’對經鍍敷前處理後之耐鍍敷性評價基板(6 cmx 12_5 cm)進行65分鐘鍍敷。此時之鍍銅被膜之厚度為21 μιη 〇 &lt;剝離&gt; 以5(TC、3 wt%之苛性鈉水溶液對經實施鍍敷處理之評 價基板進行噴霧,剝除阻劑膜。 134399.doc -33- 200919085 2.評價方法 各評價方法如下述。 (1)解像度 通過曝光部與未曝光部之寬度比例為1 : 1之線圖案光罩 (鉻玻璃光罩),對層壓後經過1 5分鐘之解像度評價用基板 進行曝光。用最小顯影時間2倍之顯影時間進行顯影,將 ' 正常地形成硬化阻劑線之最小光罩線寬作為解像度之值, 如下述般劃分等級。 p ◎(優):解像度之值為7.5 μιη以下。 〇(良):解像度之值超過7.5μιη且為8.5μπι以下。 x(不可):解像度之值超過8.5μηι。 (2) 密著性 通過曝光部與未曝光部之寬度比例為丨:1〇〇之線圖案光 罩(鉻玻璃光罩),對層壓後經過15分鐘之密著性評價用基 板進行曝光。用最小顯影時間2倍之顯影時間進行顯影, 將正常地形成硬化阻劑線之最小光罩線寬作為密著性之 ϋ 值,如下述般劃分等級。 ◎(優):密著性之值為13 μπι以下。 〇(良).密著性之值超過13μηι且為14μηι以下。 X(不可):密著性之值超過14μίη。 (3) 底腳產生性 通過曝光部與未曝光部之寬度比例為1 : 1〇〇之線圖案光 罩(鉻玻璃光罩),對層壓後經過15分鐘之底腳產生性評價 用基板進行曝光,用最小顯影時間2倍之顯影時間進行顯 134399.doc •34- 200919085 影。觀察所得之1 5 μη!之阻劑線之足部所產生的底腳,如 下述般對底腳產生性劃分等級。 ◎(優):完全未產生底腳。 〇(良).於線單側產生寬度未達1 之底腳。 X(不可):於線單側產生寬度為1 μηι以上之底腳。 (4)耐鍍敷液性 • 通過曝光部與未曝光部之寬度比例為1 : 100之線圖案光 罩(鉻玻璃光罩),對層壓後經過15分鐘之耐鍍敷性評價用 〇 基板進行曝光。用最小顯影時間2倍之顯影時間進行顯 影,然後鑛敷硫酸銅,進而剝離硬化阻劑。觀察阻劑剝離 後15 μπι部分之硫酸銅鍍敷線,如下述般對耐鍍敷液性劃 分等級。 〇(良):硫酸銅鍍敷完全不潛入。 △(可):於線單側,硫酸銅鍍敷之潛入寬度未達丨μηι。 x(不可):於線單側’硫酸銅鍍敷之潛入寬度為1 μΐΏ&amp; 上。 〇 3.評價結果 將實施例1〜8以及比較例1〜3之評價結果示於表i。 134399.doc 200919085 比較例3 κη in o o IT) (N co 0.05 r〇 〇 o 0.15 X m ◎ O 〇 V-l ο &lt;3 比較例2 wn (N o o 0.05 m 〇 o 0.17 00 〇 X X Ο 〇 比較例1 ! in 〇 o 2 ro 0.05 m d o 0.20 〇 X rt 〇 CN X i/Ί X 實施例8 IT) »r^ o o 〇 m 0.05 o o 0.21 ◎ rn ◎ 〇 ◎ Ο 〇 實施例7 IT) o o o ro Ϊ—^ 0.05 o o 0.20 ◎ ◎ o ◎ Ο 〇 實施例6 ^T) 00 o 卜 o m 0.05 r^&gt; o o 0.21 ιο 〆 ◎ m ◎ o ◎ ο 〇 實施例5 ro 0.05 rn o 0,23 vn ◎ ro ◎ o 〇 ο 〇 實施例4 沄 CN in in m 0.05 m d o 0.23 U~) oo 〇 ΓΛ ◎ *n O 〇 ο 〇 實施例3 ^T) to ro 0.05 m d o 0.23 ◎ 寸 〇 o ◎ ο 〇 實施例2 (〇 d 0.05 d o 0.23 oo 〇 ·_— ◎ o ◎ ο 〇 實施例1 in ir&gt; m d 0.05 m d o 0.23 iT) oo 〇 rn ◎ KT) d 〇 ο 〇 ώ Β-2 rn ώ B-4 1 2 M-2 M-3 M-4 M-5 r-^ (N D-l D-2 甲基乙基酮 莫耳 G zL 等級 ε =L 等級 6 n 等級 ε =1 等級 i 感光性樹脂組合物 (質量份) (B-l~B-4為固形 分質量) 溶劑(質量份) 解像度 密著性 底腳產生性 耐鍍敷液性 碱:^锯&lt;tiw^忘黩衅趄伞鉍噠矣忘伞茫-δ-荽命域鎪寒犁采礴ws 00I#r 134399.doc -36- 200919085 表2 符號 -—__ 成分 B-1 具為^基内烯駿/甲基丙烯酸甲酯/苯乙烯(質量比為25/50/25)之組成、酸當量為 344、且重量平均分子量為5萬之共聚物的43質量%(固形分)曱基乙基酮溶液 B-2 具凑中基内烯酸/笨乙烯/曱基丙烯酸苄酯(質量比為3〇/2〇/5〇)之組成、酸當量為 290、且重量平均分子量為5 5萬之共聚物的41質量0/〇(固形分)甲基乙基酮溶液 B-3 ^曱基丙稀酸/甲基丙稀酸节酯(質量比為2_)之組成、酸當量為43〇、且重 子量為2.5萬之共聚物的50質量〇/〇(固形分)曱基乙基酮溶液 B-4 ίΐΐ昃丙稀酸/甲基丙饰酸曱酿/丙稀酸正丁醋(質量比為25/60/10)之組成、酸 為374、且重量平均分子量為8萬之共聚物的34質量0形分甲基乙基酮 溶液 M-1 癸烷一甲酵一甲基丙烯酸酯(新中村化學(股)製造;製品名:NK Ester M-2 一多癸甲醇一内烯酸酯(新中村化學(股)製造;製品名:nkEster A_DCP) M-3 七内一醇二肀基丙烯酸酯 ___ -------- M-4 醇二丙稀酸醋與季戊四醇四丙稀酸醋之7 : 3、混合物(東亞合成(股)製造, M-5 甲基内烯醞氧丞五乙氧基)苯基]丙烷(新中村化學(股)製造;製品名: 1-1 2,2·-雙(2-氣笨基)-4,4,,5,5,-四笨‘-1,1,-聯唑岫_ _ &quot; 1-2 4,4'-雙(二乙基胺基)二苯曱酮 D-1 3^礙係土谷化學(股)製造之A1ZEN(註冊商標伽八觀即GREEN GH) D-2 無色結晶紫 ------- 由表1可明確,實施例1〜8中,藉由採用本案發明之構 成,解像度、密著性、底腳產生性、以及耐鍍敷液性均優 異。 比較例1中,黏合劑用樹脂並不含有選自以上述通式⑴ 及(Π)所表示之化合物群中的至少一種化合物作為共聚成 分,比較例2及3中,感光性樹脂組合物並不含有作為加成 聚合性單體(b)的選自以上述通式(ΙΠ)所表示之化合物群中 的至少一種加成聚合性單體。因此可知,解像度、密著 性、底腳產生性、以及耐鍍敷液性無法實現均優異。 [產業上之利用可能性] 134399.doc -37- 200919085 本發明可應用於印刷電路板之製造、ic晶片搭載用弓丨線 框架之製造、金屬掩模之製造等金屬箔精密加工、;BGA或 CSP等封裝之製造、COF或TAB等捲帶基板之製造、半導 體凸塊之製造、ITO電極或定址電極或者電磁波屏蔽罩等 平板顯示器之間隔壁之製造、以及利用喷砂法製造具有凹 凸圖案之基材的方法中。 【圖式簡單說明】 圖1係硬化阻劑與基板之分界部分的底腳(硬化阻劑足 部)之概略說明圖。 【主要元件符號說明】 1 硬化阻劑圖案 2 基板 3 底腳 134399.docThereafter, the stripping step is performed, that is, the resist pattern is peeled off in the same manner as in the above-described method of manufacturing the printed circuit board by the disk μ H 进而, and then the thin gold (4) other than the columnar ore is removed by (4) I. , obtain the bump of f. &lt;Manufacturing Method of Substrate Having Concavo-Convex Pattern&gt; The resist formed by the above-described resist pattern forming method can be used as a squeegee H-shield member. Examples of the substrate include glass, Shih-ray wafer, Amorpha, polycrystalline stone, ceramic, i34399.doc • 30-200919085 J = metal material, etc., in combination with the above-described resist pattern forming method. A resist pattern is formed on the substrate of glass, etc. Then, the spray material is sprayed on the resist pattern to cut the substrate to the blasting step of the ice, and the residual resist on the substrate is removed using an alkaline stripping solution or the like. The agent pattern portion may be formed into a substrate having a fine concavo-convex pattern on the substrate from the stripping step of the base Chen Yun. The spray material used in the above blasting step may be a known material, for example, a batch, a12〇3, CaC03 may be used. , ZrO, plaque, τ ^ glass stainless steel 4 particle size of about 2 ~ 1 之 particles. The above method of manufacturing a substrate having a concave-convex pattern by sand blasting can be applied to the manufacture of partition walls of flat panel displays, Organic anal (10) (10) ce, electroluminescence) glass cover processing, stone etched wafer processing, and ceramic pinning plus king. In addition, this method can be used to manufacture ferroelectric film and Electrode 0 of a metal material layer in a group consisting of a noble metal, a noble metal alloy, a high-point metal, and a high-melting-point metal compound [Examples] Hereinafter, examples of embodiments of the present invention will be specifically described. (Examples 1 to 8) Comparative Examples 1 to 3) First, the method and description of the sample for evaluation of the examples and the comparative examples, and then the evaluation method of the obtained sample and the evaluation result thereof 1. Preparation of the sample for evaluation ° was produced as follows Example σ &lt;Production of Photosensitive Resin Laminates&gt; 134399.doc -31 · 200919085 The numerical values of the components θ and θ of the έ Λ 所示 shown in Table 1 below are shown. The photosensitive resin composition and the solvent are sufficiently mixed with a β/(f component)) to obtain a photosensitive resin composition preparation liquid, and a bar coating is used: one is applied to the support as a support. On the surface of the 16 (four) thick poly 2nd dicarboxylate film, a dry coal knife was formed in a dryer of 95°° to form a photosensitive resin layer. The thickness of the photosensitive resin layer was 25 μm. Then, the photosensitivity Resin layer On the surface of the laminated polyethylene terephthalate film, a 21 (four) thick polyethylene film of the protective layer is bonded to obtain a photosensitive resin laminate. The photosensitive resin composition represented by the symbol in Table 1 is used in the formulation liquid. The name of the material component B-NDj is shown in the following Table 2. &lt;Substrate surface modification&gt; The surface of the 〇4 mm thick copper foil laminate having a rolled copper foil of 35 μηι laminated was sprayed at 0.20 MPa. The pressure was subjected to jet brushing (manufactured by Carm Co., Ltd., Japan, Sakurundum R (registered trademark) #22〇), thereby preparing a substrate for evaluation of resolution, adhesion, foot productivity, and plating resistance. &lt;Lamination&gt; The polyethylene film of the photosensitive resin laminate was peeled off, and a heat-bonding machine (manufactured by Asahi Kasei Electronics Co., Ltd., AL-70) was used for 1〇5. (: The affinity temperature was surface-modified and preheated to 6 (a photosensitive resin laminate was laminated on a copper foil laminate on TC. The air pressure was set to 〇·35 MPa, and the lamination speed was set to i 5 m/min. 〇134399.doc •32- 200919085 Using a chrome glass reticle, using an ultra-high pressure mercury lamp (manufactured by Ushi〇 Electric Co., Ltd., projection exposure unit UX2〇〇3SM-MS〇4), with an exposure of 120 mJ/cm2 Line monochromatic exposure. &lt;Development&gt; After peeling off the polyethylene terephthalate film, 3 〇. i mass% Na2C〇3 aqueous solution was sprayed for a specific time to dissolve and remove the photosensitive resin layer. At this time, the minimum time required to completely dissolve the photosensitive resin layer in the unexposed portion is set as the minimum development time. <Pre-plating treatment> The plating resistance evaluation substrate after development is subjected to acid degreasing FRX (丨〇% aqueous solution 'made by Atotech Japan Co., Ltd.) was immersed in a bath for 4 minutes under water. After washing, it was immersed in a 10% sulfuric acid aqueous solution at room temperature for 2 minutes. <Mineral copper sulfate> 19 wt ° /. Sulfuric acid copper sulfate concentrate (Meltex) The product was diluted to 3.6 times, and concentrated hydrochloric acid 2〇〇卯111 was added. Then, Cupraeid HL and Cupracid GS as brightening agents were added to 〇41111/1, 2〇1111/1, respectively, and the prepared copper sulfate plating solution was used. Using a Haring Ceil uniform plating apparatus (manufactured by Yamamoto Gold Plating Tester Co., Ltd.), the plating resistance evaluation substrate after pre-plating treatment (6 cmx 12_5 at an applied current of 0.4 A) Cm) plating for 65 minutes. At this time, the thickness of the copper-plated film is 21 μm 〇 &lt;peeling&gt; Spraying and peeling the substrate subjected to the plating treatment with 5 (TC, 3 wt% caustic soda aqueous solution) Detachment film 134399.doc -33- 200919085 2. Evaluation method Each evaluation method is as follows: (1) Resolution of the line pattern mask (chrome glass mask) with a ratio of the ratio of the exposed portion to the unexposed portion of 1:1 The substrate for exposure evaluation after lamination is laminated for 15 minutes. Development is performed with a development time twice the minimum development time, and the minimum mask line width of the hardened resist line is normally formed as the resolution value. Classify as follows. p ◎ (excellent): The resolution value is 7.5 μηη or less. 〇 (good): The resolution value exceeds 7.5 μηη and is 8.5 μπι or less. x (not): the resolution value exceeds 8.5 μηι. (2) Adhesion pass The ratio of the width of the exposed portion to the unexposed portion was a line pattern mask (chrome glass mask) of 丨: 1 ,, and the substrate for adhesion evaluation was exposed for 15 minutes after lamination. The development was carried out with a development time twice as long as the development time, and the minimum mask line width which normally formed the hardened resist line was taken as the value of the adhesion, and was classified as follows. ◎ (excellent): The value of the adhesion is 13 μπι or less. 〇(良). The value of adhesion is more than 13μηι and is 14μηι or less. X (not available): The value of the adhesion is more than 14μίη. (3) A base pattern mask (chrome glass mask) whose ratio of the width of the exposed portion to the unexposed portion is 1:1, and the substrate for evaluation of the foot generation after 15 minutes of lamination Exposure was carried out with a development time of 2 times the minimum development time for 134399.doc •34- 200919085. The foot generated by the foot of the obtained resist line of 1 5 μη! was observed, and the foot was graded as follows. ◎ (Excellent): No foot is produced at all. 〇 (good). A foot with a width of less than 1 is produced on one side of the line. X (not available): A foot with a width of 1 μηι or more is produced on one side of the line. (4) Plating resistance • A pattern mask (chrome glass mask) with a ratio of the width of the exposed portion to the unexposed portion of 1:100, which is evaluated for plating resistance after 15 minutes of lamination. The substrate is exposed. The development was carried out with a development time twice as long as the development time, and then copper sulfate was applied, and the hardening resist was peeled off. The copper sulfate plating line of 15 μm portion after the peeling of the resist was observed, and the plating resistance was classified as follows. 〇 (good): copper sulphate plating does not sneak at all. △ (may): On the one side of the line, the immersion width of copper sulfate plating is less than 丨μηι. x (not available): The immersion width of the copper sulphate plating on the one side of the line is 1 μΐΏ & 3. Evaluation results The evaluation results of Examples 1 to 8 and Comparative Examples 1 to 3 are shown in Table i. 134399.doc 200919085 Comparative Example 3 κη in oo IT) (N co 0.05 r〇〇o 0.15 X m ◎ O 〇Vl ο &lt;3 Comparative Example 2 wn (N oo 0.05 m 〇o 0.17 00 〇 XX Ο 〇 Comparative Example 1 ! in 〇o 2 ro 0.05 mdo 0.20 〇X rt 〇CN X i/Ί X Example 8 IT) »r^ oo 〇m 0.05 oo 0.21 ◎ rn ◎ 〇◎ Ο 〇 Example 7 IT) ooo ro Ϊ— ^ 0.05 oo 0.20 ◎ ◎ o ◎ Ο 〇 Example 6 ^T) 00 o Bu om 0.05 r^&gt; oo 0.21 ιο 〆 ◎ m ◎ o ◎ ο 〇 Example 5 ro 0.05 rn o 0,23 vn ◎ ro ◎ o 〇ο 〇 Example 4 沄CN in in m 0.05 mdo 0.23 U~) oo 〇ΓΛ ◎ *n O 〇ο 〇 Example 3 ^T) to ro 0.05 mdo 0.23 ◎ 〇 〇 o ◎ ο 〇 Example 2 ( 〇d 0.05 do 0.23 oo 〇·_— ◎ o ◎ ο 〇 Example 1 in ir&gt; md 0.05 mdo 0.23 iT) oo 〇rn ◎ KT) d 〇ο 〇ώ Β-2 rn ώ B-4 1 2 M- 2 M-3 M-4 M-5 r-^ (N Dl D-2 methyl ethyl ketone Mo G zL grade ε = L grade 6 n grade ε =1 grade i Photosensitive resin composition (parts by mass) (Bl to B-4 is a solid content) Solvent (parts by mass) Resolution: Adhesive footing resistance plating liquid alkali: ^Saw&lt;tiw^ Forgot Umbrella 铋哒矣 茫 茫 δ δ δ δ 荽 δ 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 43% by mass of a copolymer of methyl ester/styrene (mass ratio of 25/50/25), an acid equivalent of 344, and a copolymer having a weight average molecular weight of 50,000 (solid content) mercaptoethyl ketone solution B-2 41 having a composition of a benzoic acid/stupidyl vinyl/benzyl methacrylate (mass ratio of 3〇/2〇/5〇), an acid equivalent of 290, and a weight average molecular weight of 550,000 Mass 0/〇 (solid fraction) methyl ethyl ketone solution B-3 ^ mercapto acrylate / methyl acrylate acid ester (mass ratio 2 _) composition, acid equivalent is 43 〇, and the baryon weight is 50 mass copolymer of 50 mass 〇 / 〇 (solid content) thiol ethyl ketone solution B-4 ΐΐ昃 ΐΐ昃 acrylic acid / methyl glycerin acid brewing / acrylic acid butyl vinegar (mass ratio of 25 / 60/10) composition, acid is 374, and heavy 34 mass 0-form methyl ethyl ketone solution of copolymer with a mass average molecular weight of 80,000 M-1 decane monomethyl methacrylate (manufactured by Shin-Nakamura Chemical Co., Ltd.; product name: NK Ester M- 2 more than one methanol-enylic acid ester (manufactured by Shin-Nakamura Chemical Co., Ltd.; product name: nkEster A_DCP) M-3 seven-indolyl dimercapto acrylate ___ -------- M-4 7:3, a mixture of alcohol diacetic acid vinegar and pentaerythritol tetraacetic acid vinegar (manufactured by East Asia Synthetic Co., Ltd., M-5 methylene olefin oxime pentoxide) phenyl]propane (Xinzhongcun Chemical Co., Ltd.) (stock) manufacturing; product name: 1-1 2,2·-double (2-gas base)-4,4,,5,5,-four stupid '-1,1,- oxazolium _ _ &quot ; 1-2 4,4'-bis(diethylamino)benzophenone D-1 3^ A1ZEN (registered trademark G8) is a colorless product made by Tugu Chemical Co., Ltd. D-2 colorless Crystal Violet-- It is clear from Table 1 that in Examples 1 to 8, the composition of the present invention is excellent in resolution, adhesion, foot productivity, and plating liquid resistance. In Comparative Example 1, the resin for a binder does not contain at least one compound selected from the group consisting of the compounds represented by the above formulas (1) and (Π) as a copolymerization component, and in Comparative Examples 2 and 3, the photosensitive resin composition is It does not contain at least one addition polymerizable monomer selected from the group of compounds represented by the above formula (ΙΠ) as the addition polymerizable monomer (b). Therefore, it is understood that the resolution, the adhesion, the foot productivity, and the plating resistance are not excellent. [Industrial Applicability] 134399.doc -37- 200919085 The present invention can be applied to the manufacture of printed circuit boards, the manufacture of ic wafer mounting bow frames, and the fabrication of metal masks, and the like. Or manufacturing of a package such as CSP, manufacture of a tape substrate such as COF or TAB, manufacture of a semiconductor bump, manufacture of a partition wall of a flat panel display such as an ITO electrode or an address electrode or an electromagnetic wave shield, and manufacture of a concave-convex pattern by sandblasting In the method of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic explanatory view of a foot (hardened resist foot) of a boundary portion between a hard resist and a substrate. [Main component symbol description] 1 Hardened resist pattern 2 Substrate 3 Foot 134399.doc

Claims (1)

200919085 十 1. 申請專利範圓: 一種感光性樹脂組合物,其含有: (a)黏合劑用樹脂2〇〜9〇 . 钕其冬旦,ν缺上 負夏/。’該U)黏合劑用樹脂中 羧基含里以酸當量計 , ⑽0,含有選自以下述通式 (I)及(II)所表示之化合物 ^ /V 鲆中的至少一種化合物單元作 為共水成分’且重量平 ib、呈右5丨 十均&quot;子I為5,000〜500,000; (b) 具有至少—個全# 7 α ,, 稀性不飽和基 合性單 體5〜75質量% :以及 土炙加成眾〇旺早 (c) 光聚合起始劑〇〇1〜3〇質量%;並 該加成聚合性單體⑻含 之化合物群中的至彡乂下迷通式⑽所表示 叩至乂―種加成聚合性單體. [^tl] 平體, h2c=9200919085 Ten 1. Patent application: A photosensitive resin composition containing: (a) Resin for adhesive 2〇~9〇. 钕其冬旦, ν缺上负负/. 'U' of the binder in the resin, wherein the carboxyl group contains, in acid equivalents, (10) 0, containing at least one compound selected from the group consisting of the compounds represented by the following general formulae (I) and (II) as a water-repellent The composition 'and the weight of the flat ib, the right 5 丨 10 averal &quot; sub I is 5,000~500,000; (b) having at least one all # 7 α ,, the unsaturated unsaturated monomer 5~75% by mass: And the addition of the earthworms to the public (c) photopolymerization initiator 〇〇1 to 3 〇 mass%; and the addition of the polymerizable monomer (8) to the group of compounds to the underarms (10) Represents 叩 to 乂 - kind of addition polymerizable monomer. [^tl] flat body, h2c=9 (!) (式中’ R〗表示氫原子或甲基’ 音原早、铋Α 衣不選自由氫原子、鹵 素原子録、碳數為1〜12之烷基 Μ. ^ Μ. 灭數為1〜12之烧乳 土 土、1及鹵烷基所組成之群中的一 [化2] 搜暴)’ •(H) H2C=C—COO-—CH. (式中,R3表示氫原子或甲基,尺4表 素原子、羥基、碳數為卜12之烷基 虱原子、產 基、叛基、以及^基所組成之群 〜12之炫氧 —種基), I34399.doc(!) (wherein 'R〗 indicates a hydrogen atom or a methyl group'. The sound is not selected from the hydrogen atom, the halogen atom, and the alkyl group having a carbon number of 1 to 12. ^ Μ. 1~12 of the burnt soil, 1 and a group of haloalkyl groups. [H2C=C-COO--CH. (wherein R3 represents a hydrogen atom) Or a methyl group, a phenanthrene atom, a hydroxyl group, an alkyl group having a carbon number of 12, a base group, a thiol group, and a group consisting of a group of 12 to 12 oxo groups, I34399.doc 200919085 [化3] Ο CHi-O-fA-O^B-O^C—C=CH2 A …⑽ (Rt^^-O^A-O^B-O^C—C=CH2 o (R及R为別獨立表不風原子或曱基;A及B表示碳數為 2〜6之伸烷基’其等可相同亦可不同’於不同之情形 時,-(A-O)-及-(B-〇)-重複單元可為嵌段結構亦可為無規 結構;m 1、m2、m3及m4為〇或正整數,該等之合計為 〇〜40 ; R7為齒素原子或碳數為1〜3之烷基,η為〇〜14之餐 數)。 2.如請求们之感光性樹月旨組合物,其中以上述通式帅所 表不之至)一種加成聚合性單體相對於感光性樹脂組A 物整體之含有率為5〜35質量%。 、。 •ί · 如晴求項1或 始劑(C)含有選自以下述通式(IV) 至少-種2’4,5-三芳基咪唑二聚物 其中上述光聚合起 示之化合物群中的 I34399.doc 200919085[化4]200919085 [Chemical 3] Ο CHi-O-fA-O^BO^C—C=CH2 A ...(10) (Rt^^-O^AO^BO^C—C=CH2 o (R and R are independent representations Wind atom or sulfhydryl group; A and B represent an alkylene group having a carbon number of 2 to 6 and the like may be the same or different. When different, -(AO)- and -(B-〇)-repeat units The block structure may also be a random structure; m 1 , m 2 , m 3 and m 4 are 〇 or a positive integer, and the total is 〇 40; R 7 is a dentate atom or an alkyl group having 1 to 3 carbon atoms; , η is the number of meals of 〇~14. 2. The photosensitive composition of the sensitizing tree of the request, wherein the above-mentioned general formula is not known) an addition polymerizable monomer relative to the photosensitive resin group The content of the entire material A is 5 to 35 mass%. ,. • ί · such as the clear item 1 or the starter (C) containing at least a 2'4,5-triarylimidazole dimer of the following formula (IV), wherein the photopolymerization is carried out in the compound group I34399.doc 200919085[化4] 烷基及烷氧基、以及齒基所組成之群中的 及r分別獨立為1〜5之整數)。 碳數為1~5之 —種基,p、卩 4. 其中上述加成聚舍 表示之化合物群中 如請求項1或2之感光性樹脂組合物, 性單體(b)含有選自以下述通式(v)所 的至少一種加成聚合性單體·· [化5] H CH3 〇 ch2 ..-(V) (式中’ R8及R9分別獨立表示氫原 乳厚十或甲基;tl及t3為 0〜4之整數,〖2為4〜20之整數)。 5,如請求項U12之感光性樹脂組合物,其中每⑽§感光性 樹月旨組合物中,上述加成聚合性單體⑻之末端乙稀性不 飽和基(反應性末端基)為〇.1〇〜〇 4〇莫耳。 6 · 一種感光性樹脂積層體,直包合古姓μ 已3支持體以及積層於其上 134399.doc 200919085 之如請求項1至5中任一項之感光性樹脂組合物。 7. 一種阻劑圖案之形成方法,其包括層壓步驟、曝光先 驟、以及顯影步驟,於層壓步驟中,使用如請求項6之 感光性樹脂積層體於基板上形成感光性樹脂層。 8-如請求項7之阻劑圖案形成方法,其中於上述曝光步驟 中進行直接刻寫。 9. 一種印刷電路板之製造方法,其包括對利用如請求項7 或8之阻劑圖案形成方法而形成有阻劑圖案之基板進行 餘刻或鑛敷的步驟。 10. 一種引線框架之製造方法,其包括對利用如請求項7或8 之阻劑目案形成方&amp;而形成有P且劑圖案之基板進行 的步驟。 U· 一種半導體封裝之製造方法,纟包括對利用如請求項7 或8之阻Μ圖案形成方法而形成有阻劑圖案之基板進、〜 触刻或鑛敷的步驟。 行 〆、· v.y 12. -種凸塊之製造方法’其包括對利用如請求項7或$之阻 劑圖案形成方法而形成有阻劑圖案之基板進行餘刻或錄 13. 其包括藉由噴砂 方法而形成有阻劑 種具有凹凸圖案之基材之製造方法 對利用如請求項7或8之阻劑圖案形成 圖案之基板進行加工的步驟。 134399.docThe alkyl group and the alkoxy group, and r in the group consisting of the dentate groups are each independently an integer of 1 to 5). The group having a carbon number of 1 to 5, p, 卩4. wherein the above-mentioned additive group represents a photosensitive resin composition according to claim 1 or 2, and the monomer (b) contains a group selected from the following At least one addition polymerizable monomer of the formula (v): [Chemical 5] H CH3 〇ch2 ..-(V) (wherein R8 and R9 each independently represent a hydrogen original thickness of ten or methyl ;tl and t3 are integers of 0 to 4, and 〖2 is an integer of 4 to 20). 5. The photosensitive resin composition of claim U12, wherein the terminal ethylenically unsaturated group (reactive terminal group) of the addition polymerizable monomer (8) is 〇 in each (10) § photosensitive resin composition. .1〇~〇4〇莫耳. A photosensitive resin laminate which is a photosensitive resin composition according to any one of claims 1 to 5, which is a composite material of the present invention. A method of forming a resist pattern comprising a laminating step, an exposing step, and a developing step of forming a photosensitive resin layer on the substrate using the photosensitive resin laminate according to claim 6. The method of forming a resist pattern according to claim 7, wherein the direct writing is performed in the above exposure step. A method of manufacturing a printed circuit board comprising the step of engraving or mineralizing a substrate having a resist pattern formed by a resist pattern forming method as claimed in claim 7 or 8. A method of manufacturing a lead frame, comprising the step of forming a substrate having a P and a pattern of a pattern using a resist formation method as claimed in claim 7 or 8. U. A method of fabricating a semiconductor package, comprising the step of implanting, etching or depositing a substrate having a resist pattern formed by the barrier pattern forming method of claim 7 or 8. 〆 · · - - - - - - - - - - - - - - - - - - - - - - - - - ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' A method of manufacturing a substrate having a resist pattern and a concave-convex pattern by a sand blasting method, a step of processing a substrate formed with a resist pattern as claimed in claim 7 or 8. 134399.doc
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