201036201 六、發明說明： 【發明所屬之技術領域】 、 本發明提供一種發光二極體及其相關背光模組，尤指-種具有 -透鏡(1㈣之發光二極體，使發光二極體具有側向光場以及相關背光 模組。 〇 【先前技術】 近年來發光二極體(以下簡稱LED (丨ight emitting di〇de))的應用 領域不斷地制發。LED韻冷發光，具雜電量低、猶壽命長、 無須暖燈時間、反應速度快等優點，再加上其體積小、财震動、適 合畺產，各易配合應用需求製成極小或陣列式的元件等優點。發光 二極體(LED)裝置為符合應求，往往需要在統場型(beam Q Pattem)、視角(viewangle)、或出光角度上加以配合；故當led以 - 矩陣排列，需將間距與欲照射平面距離考量好才可在欲照射表面有 ^ 均勻亮度分佈。 一般LED的發光場形為Lambertian發散’其發散角約120度左 右，且LED表面法線方向之光線(中心光源)最強。也正因為如此， 在組成背光模組時’如欲縮短與照射平面距離或拉大LED間距，照 射平面上便會呈現亮點型式之分佈。 3 201036201 為了解決上述問題’-般背光模組皆以全側向發光之為 主’目前已有許多習知技術陸續被公開，包含美國專利4,9⑽44、 2006/0076568以及2007/0195534等，其均在LED封裝體上加上一 ‘透鏡結構並在透鏡表面中心附近鑛上反射層，利用透鏡曲率折光至 貼近水平方向之大角度出光，以得到接近水平發散的發光場形，但 此種LED在法線方_光強度極弱，幾乎財任何出射光線。 〇 美國專利2006/0102914進一步揭露了具有翅膀形光場的發光二 極體結構’其利用兩層曲面中間含有溝槽(gap)的結構，可達到大角 度的翅膀形光場，其法線方向之光場強度為與法線夹70_80度的光 場強度的W3%。此外，請參考第！圖，第！圖為美國專利公告第 2007/01877G5 A1號所揭露習知發光二極體之剖面示意圖。爲調整發 光二極體100之發光場形，使其呈現翅膀場形，利用晶片〗上方 具有凹槽130之透鏡12㈣式以達成不同形狀之發光場形。但上述 之LED侧向光強度與側向角度控制卻不盡理想，故當led欲組成 -背光模組時，其組成之陣列間距亦受限於一定距離以内，以避免造 成亮度不夠與亮度不均等問題’但這樣的解決方法卻造成咖數量 必須增加，成本也隨之提高。 【發明内容】 本發明係提供-種發光二極體，其包含—發光二極體晶片、一 基底結構、-螢光粉層’錢-賴(lens)。其巾該透鏡設置於該基 4 201036201 底結構上。§亥基底結構具有一凹槽，可使該發光二極體晶片設置於 該凹槽内，該螢光粉層於該凹槽内且覆蓋該發光二極體晶片，該透 鏡則具有一曲面側壁，頂部則形成一平面，頂部中央具有一倒圓錐 結構之凹錐(conical concave portion) 本發明另提供一種背光模組(backiight unit)，其包含一反射板 (reflective sheet)、一擴散板(diffuser piate)，以及複數個本發明之發 〇光-極體。其巾該擴散板設置於該反射板上方，該發光二極體設置 於忒反射板與遠擴散板之間，而任兩相鄰該發光二極體之設置間距 係’I於20釐米40釐米(mm)之間，任兩相鄰之發光二極體之 δ又置間距尚度與寬度比係介於0.5至〗之間。 【實施方式】 I本專利綱書及後續財料繼目當t制了㈣詞彙來 〇 &稱特定的元件。所屬領域巾具有通常知識者應可贿，硬體製造 胃可％會用不同的名詞來稱呼同-個元件。本說明書及後續的申請 ♦利範圍並不以名稱的差異來作為區分元件的方式，而是以元件在 心b上的差異來作為區分的準則。在通篇說明書及後續崎求項當 斤^及的」係為—開放式的用語，故應解釋成「包含但不 限定於」。 °月參考第2圖、第3圖。本發明之發光二極體20、30包含〆 5 201036201 基底結構200、300、一發光二極體晶片252、352、一螢光粉層254、 354以及一透鏡(lens)240、340，其中基底結構200、300具有一凹 槽250、350，可使發光二極體晶片252、352置於其中，而榮光粉 、 層254、354設置於凹槽250内且覆蓋於發光二極體晶片252、352 上，用以將晶片發光波長轉換為其它發光波長並增加發光二極體 20、30之出光光色均勻性，透鏡240、340設置於基底結構2〇〇、300 上，用以調整發光二極體晶片252所發出之光線，改變其發光場形， 〇 而基底結構200、300更包含至少一導電端子202、203、302、303， 用以提供發光二極體晶片252、352所須發光之電壓。 此外，基底結構為一多層基板堆疊結構’也就是說，基底結構 200、300至少為一第一基板210、310以及一位於第一基板210、310 上的第二基板220、320疊合而成，換言之，基底結構200、300亦 可包含一第三基板230，疊合於第二基板220、320上方。 〇 此外，導電端子202、203、302、303為一多層金屬導電架構 的一部分’也就是說，基底結構200、300係為該多層金屬導電架構 與多層基板堆疊結構結合而成，其中以第2圖為例，該多層金屬導 電架構至少包含一第二金屬層222用以形成其正負導電端子202、 203以及一位於第一基板210與第二基板220間之第一金屬層212, 進而提供一個熱電合一的架構，使得發光二極體晶片252發光所產 生的熱可藉由第二金屬層222導出；其中該多層金屬導電架構形成 方法可藉由彼覆(coating)、電鍍(plating)、印刷(printing)、金屬薄片 201036201 爽層或引線框架之方式設置二金屬層212、222 ·，並更包含連接二金 屬層212、222的—導體26〇，該連接方式可為一體成型的引線框架 360或於該多層基板間設置至少二穿孔(如第5圖所示之第-孔洞 、214、215及第6圖所示之第二孔洞224、225)，並於該些穿孔中填 充一金屬物(如第2圖及第3圖所示之導體260、360)，進而其中一 該穿孔用以提供第一金屬與第二金屬層2D電性連接，故該 些穿孔亦可稱為導電孔，而填充金屬物的方法係可藉由電鑛或灌入 ❹金屬漿或金屬膠之方式以達到填充之目的。 此外，爲使發光二極體晶片252、352與基底結構200、300電 性連結，則設置至少一導線27〇、37〇連接發光二極體晶片252、说 及導電端子202、203、302、303。其中引線框架360、第一金屬層 212及第二金屬層222之材料係以銅/鎳/銀合金(Cu/Ni/Ag)或銅/鎳/ 金(Cu/Ni/Au)合金所組成，導體層26〇材料係以銀(Ag)所組成。 ❹ 此外’基底結構2〇〇、300 (亦即第一基板210、310,第二基板 220、320以及第三基板230)係由散熱板、導電板、電路板或陶瓷 板所構成，其組成材料可為矽材料、陶瓷材料或金屬材料等個別或 混合之材料。 此外’基底結構200、300更包含一散熱塊280、380，發光二 極體晶片252、352係位於散熱塊280、380上，其中散熱塊280、 380之材質係為銅(Qi)或銀(Ag)，於發光二極體晶片252、352作用 201036201 而產生熱月匕日t ’賴塊28〇、3 8〇藉由熱傳導的特性可將發光二極體 晶片252、352所產生的熱能傳遞出去，於本發明的實施例中，散埶 塊280、380亦可視為第-基板210、310之-部分。 ·、、、 請參考第4圖，本發明之透鏡24〇具有-獨特外形，包括具有 -曲面側壁242 ’透鏡240頂部具有-平面244，且頂部中央具有一 倒圓錐結構之凹錐（eQnieal議_ρ_η)246,透鏡可調整發 〇光二極體晶片252、352之發光場形，使其呈現側向光場。此外請一 併參照第2圖及第3圖，本發明中之發光二鋪20、30之基底結構 200、300的凹槽250、35〇邊長a尺寸係小於透鏡鳩、34〇餘之 B 一刀之，因此發光二極體晶片252、352在凹槽250、350中可 以呈現類似點光源之形式發光。 此外，以本發明實施例而言，於發光二極體2〇底部更包含—第 二金屬層，用以形成一驅動電路(圖未示），也就是提供至少一對應 P之正貞電壓於該驅動電路’再藉由與發光二極體晶片μ2電性導通 之二正負導電端子2〇2、203而使其產生光源。參考第5圖至第8圖 且搭配第2圖為例，當第一基板21〇與第二基板22〇堆疊時，第— 孔洞 214、215、216、217 與第二孔洞 224、225、226、227 填充該 金屬物使其與第三金屬層所形成之相對應該驅動電路產生電性連 接，以單一晶片為例，發光二極體晶片252之正極可利用導線27〇 連接導電Λϊί(子202後，透過任一第一孔洞215、217與該任一第一孔 洞相對的第二孔洞225、227内之該金屬物外接相對應該驅動電路之 8 201036201 正極接點；同理，發光二極體晶片252之負極可利用導線27〇連接 導電端子203後’透過任一第一孔洞214、216與該任—第一孔洞相 對的第二孔洞224、226内之該金屬物外接相對應該驅動電路之負極 '接點，如此完成。其中，發光二極體晶片252之正負極亦可利用導 線270分別連接另一導電端子202、203。 請參考第9圖，第9圖為本發明發光二極體2〇帛一實施例之第 〇 一基板210底視圖。發光二極體20之第一基板210底部具有一第三 * 金屬層’其包含複數個金屬墊218，至少二第-基板210底部四端 .之金屬墊218與發光二極體晶片说之正負極相連接，並提供該正 負電麗於該驅動電路，且與發光二極體晶片况電性導通產生光 源。此外，亦可於該發光二極體20中置入複數贿光二極體晶片 於凹槽250中(凹槽250係搭配第2圖所示），其中該複數個晶片 電性連接關係可視需求為串聯或並聯。更進—步的說，該晶片間的 〇 _並聯關係可藉由該些金屬塾218搭配外接相對該應該驅動電路之 -正負極接點以及導線別搭配導電端子202、203加以調整。舉例來 _說’與外部驅動電路電性連接該些金屬墊218，僅提供一對正負電 性將該一晶片藉由該些導線27〇與該些導電端子观、加電性聯 接，或者，將一晶片正極與另一晶片負極直接以另一導線連接該二 晶片，則可提供二晶片之電性串聯關係；其中正負極可視需求互換。 請搭配參照第2圖且由第5圖至第8圖可知，一第一絲21〇 具有至少第-金屬層犯，其中第一金屬層犯具有複數個土第一孔 9 201036201 洞214、215、216、217。由第6圖可知，一第二基板320具有至少 一第二金屬層322 ’其中第二金屬層222具有複數個第二孔洞224、 225、226、227。爲提供發光二極體晶片252與外部電源的電性連接， -則第一孔洞 214、215、216、217 與第二孔洞 224、225、226、227 兩兩相對相互重疊，並填充入一金屬物形成一貫穿第一基板與第二 基板之導體260(又稱導電孔），使正負導電端子202、203可藉由導 體260與外部電源電性連接，此外，部份的第二孔洞224、225中的 Q 導體260更用以提供第一金屬層212與第二金屬層222電性連接。 由第7圖可知，第三基板230係疊合於第二基板220上方，且第三 基板230具有一容置空間，可容置連接於發光二極體晶片252以及 第一金屬層222之間的導線270，以保護發光二極體2〇之線路。最 後由第8圖可知，透鏡240係疊合於第三基板23〇上方，可調整發 光一極體晶片252之發光場形。 〇 本發明利用透鏡240、340結構改良發光二極體2〇、3〇之發光 -%形’使發光二極體20、3〇具有一翅膀形狀之發光場形，同時搭配 將發光二極體晶片252、352設置於凹槽250、350内，且凹槽250、 350與透鏡240、34G具有特殊比例的尺寸關係，使發光二極體晶片 252、352以近似點光源之形式發光，如此一來，發光二極體2〇、％ 可以產生中d度較斜向光強度綱之翅雜發光卿，因此當發 光二極體20、30之設置間距拉大後，或與欲照射面距離拉近時，兩 發光二極體20、3G間之統與發光二赌2Q、％上方之亮度不至 於相差太夕’因此在提供均句光強度的條件下，本發明所揭露之發 201036201 光極體20、30可以更大之間距配置。換言之，當將發光二極體 2〇、30應用於直下式背光模組的背光源時，具有大視角的發光二 極體20、30可以有效縮短背光模組與薄膜電晶體-液晶顯示器模組 ' 的距離。此外，本發明所揭露之發光二極體20、30結構所發出之 光線的波長範圍介於300奈米(nm)至7〇〇奈米之間，請參照第1〇 圖及第11圖，第10圖為本發明發光二極體（：與習知發光二極體〇 光強度與發光角度關係之曲線圖，第11圖為發光二極體C與習知 〇 發光二極體D照射於平面上亮度分布圖。由第1〇圖可知，習知發 光二極體D結構所提供發光場形之最大強度在中心法線方向，而偏 離中心法線方向越遠’其光強度呈現遞減之現象。然本發明發光二 極體C結構所提供發光場形，其場形強度最大值約介於與法線夾 40-70度角間’而法線方向之光強度約為最大光強度極大值之4〇0/〇 至70%。由第11圖可知’習知發光二極體〇之光亮度半徑較本發 明發光二極體C小。故由上述可知，本發明之發光二極體2〇、3〇 ^ 可有效改變發光二極體晶片252、352之發光光場，其翅膀形狀之發 ' 光場形可使發光二極體20、30具有大視角發光及較大之照射半徑之 — 特性。 請參考第12圖。第12圖為應用本發明所揭露之發光二極體 20、30之为光模組400之示意圖。其中背光模組(back light unit) 400 包含一反射板（reflective sheet) 420、一擴散板(diffUser plate) 440 以 及複數個發光二極體20 (或發光二極體30)。其中擴散板440設置於 反射板420上方，複數個發光二極體20則設置於反射板420與擴散 11 201036201 板440之間。此外’擴散板440上方可另增設一第一擴散膜(diffilser film) 442、一第一增亮膜(brightness enhancement film-BEF) 460、一 第二增亮膜462以及一第二擴散膜444。其中發光二極體20所產生 之光線由擴散板440散射至顯示面板(圖未顯示），於發光二極體2〇 下方之反射板420則可將發光二極體20向下散射之光線反射至擴散 板440,以有效利用發光二極體2〇所發出之光線。而擴散板44〇上 之擴散膜460則具有導光功能。在背光模組4〇〇中，由於發光二極 ❹體20具有如前述翅膀狀之發光場形，因此在背光模組400内任兩相 鄰發光二極體20之設置間距可介於2〇釐米(mm)i 4〇釐米(mm)之 間，較佳為25釐米(mm)至29釐米(mm)之間。除此之外，任兩相鄰 之發光二極體20設置間距之高度與寬度比介於〇 5至丨之間，故利 用本發明之發光二極體20所組成之背光模組4〇〇，可有效減少發光 一極體20的數量，同時符合背光模組4〇〇之光強度及均勻度需求。 此外，發光二極體20與擴散板440之距離Η亦因發光二極體2〇之 側向光場特性可進一步縮小，進而達到背光模組4〇〇薄型化 曾之目的。 本發明揭露之發光二極體，其·特殊外型之透鏡以及凹槽與 透鏡間相對特殊比例作用，藉以調整發光二極體之發光場形特徵， 形成具有細光場讀光二歸，其中，本發明之技_容特徵不 僅侷限於第2 ®、第3 ®中打線技術(wirebounding)將晶片與基 底結構上之導電端子連接以提供發光二極體晶片所需發光之電壓， 本發明亦適用於覆晶封裝师p_Chip)技術，於晶片上生成至少—凸塊 12 201036201 (bump) ’再將晶片翻轉使該凸塊與基底結構直接連結，也就是 說，不論應用於何種封裝技術，只要於基底結構上裝設本發明特殊 形狀之透鏡皆為本發明之技術内容特徵，而本發明所提供之背光模 - 組，可利用本發明具有侧向光場之發光二極體，在不影響照明均勻 -度及壳度之情況下，將發光二極體設置之陣列間距加大，可有效減 少發光一極體使職目以達到降低成本之目的。此外，為因應目前 背光市場朝向㈣發展’核之發光二極體可創於在直下式背光 〇模組之設計上，使其達到厚度薄形化之目的。且本發明更可應用於 路燈或-般光源之應用上，使其達到更大的設計彈性，並使模組成 本更低’且極具競爭力。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍 所做之均等變化絲飾，皆應屬本發明之涵蓋範圍。 【圖式簡單說明】 〇 第1圖為習知發光二極體之剖面示意圖。 第2圖為本發明發光二極體第—實施例之剖面圖。 第3圖為本發明發光二極體第二實施例之剖面圖。 第4圖為本發明透鏡之剖面圖。 $ 5圖為發光二極财—實酬之第―基板示意圖。 $ 6圖為本發明發光二極體第—實施例之第二基板示意圖。 $ 7 ®為本發明發光二極體第一實施例之第三基板示意圖。 13 201036201 第8圖為本發明發光二極體第一實施例加入透鏡之示意圖。 第9圖為本發明發光二極體第一實施例之基板底視圖。 第10圖為本發明發光二極體c與習知發光二極體D光強度與發光 . 角度關係之曲線圖。 第11圖為本發明發光二極體C與習知發光二極體D照射於平面上 之亮度分佈圖。 第12圖為本發明背光模組之示意圖。 ❹ 【主要元件符號說明】201036201 VI. Description of the Invention: [Technical Field] The present invention provides a light-emitting diode and related backlight module, and more particularly to a light-emitting diode having a lens (1 (four)), such that the light-emitting diode has Lateral light field and related backlight module. 先前[Prior Art] In recent years, the application field of LED (丨 t t t emitting emitting 不断 不断 不断 不断 不断 不断 不断 。 LED LED LED LED LED LED LED LED LED LED LED LED LED Low, long life, no need for warming time, fast response, etc., plus its small size, vibrating vibration, suitable for production, easy to meet the application requirements to make very small or array of components and other advantages. In order to meet the requirements, the body (LED) device often needs to be matched in the beam Q Pattem, view angle, or light exit angle; therefore, when the LEDs are arranged in a matrix, the distance between the pitch and the plane to be illuminated needs to be Only when considering the surface to be illuminated, there is a uniform brightness distribution. Generally, the luminous field shape of the LED is Lambertian divergence', its divergence angle is about 120 degrees, and the light in the normal direction of the LED surface (the central light source) is the strongest. Because of this, when forming a backlight module, if you want to shorten the distance from the illumination plane or increase the distance between the LEDs, the distribution of bright spots will appear on the illumination plane. 3 201036201 In order to solve the above problems, the backlight modules are all-sided. There are many conventional technologies that have been published, including U.S. Patents 4,9(10)44, 2006/0076568, and 2007/0195534, all of which have a 'lens structure' attached to the LED package and on the lens surface. The upper reflective layer near the center uses the curvature of the lens to refract light to a large angle close to the horizontal direction to obtain a light-emitting field shape that is close to horizontal divergence. However, the LED has a very weak light intensity at the normal side, and almost any light is emitted. U.S. Patent No. 2006/0102914 further discloses a light-emitting diode structure having a wing-shaped light field, which utilizes a structure in which a gap between two curved surfaces has a gap, and can achieve a large-angle wing-shaped light field with a normal direction. The intensity of the light field is W3% of the light field intensity of 70_80 degrees with the normal clip. In addition, please refer to the figure!, the figure is the disclosure of US Patent Publication No. 2007/01877G5 A1. A cross-sectional view of the light-emitting diode is used to adjust the light-emitting field shape of the light-emitting diode 100 to have a wing field shape, and a lens 12 (four) having a groove 130 above the wafer is used to achieve a different shape of the light-emitting field. The above-mentioned LED lateral light intensity and lateral angle control are not ideal, so when the LED is to be composed of a backlight module, the array spacing of the components is also limited within a certain distance to avoid causing insufficient brightness and uneven brightness. The problem is that the solution has to increase the number of coffees and increase the cost. SUMMARY OF THE INVENTION The present invention provides a light-emitting diode comprising a light-emitting diode chip, a substrate structure, and a firefly. Light powder layer 'money-la (lens). The lens is disposed on the base structure of the base 4 201036201. The base structure has a recess in which the LED chip is disposed in the recess, the phosphor layer is disposed in the recess and covers the LED wafer, and the lens has a curved sidewall The top portion forms a flat surface, and the top center has a conical concave portion. The present invention further provides a backlight module including a reflective sheet and a diffuser plate. Piate), and a plurality of hair-light bodies of the present invention. The diffusing plate is disposed above the reflecting plate, and the light emitting diode is disposed between the 忒 reflecting plate and the far diffusing plate, and the spacing between any two adjacent light emitting diodes is 'I 20 cm 40 cm Between (mm), the δ spacing between the two adjacent light-emitting diodes is between 0.5 and 〖. [Embodiment] I This patent and subsequent materials are followed by (4) vocabulary amp & called specific components. The person in the field has the usual knowledge that the person should be bribed, and the hardware can be used to refer to the same component by different nouns. This specification and subsequent applications ♦ The scope of profit does not use the difference in name as the way to distinguish the components, but the difference in the components on the heart b as the criterion for differentiation. In the entire manual and in the follow-up, it is an open-ended term, so it should be interpreted as "including but not limited to". Refer to Figure 2 and Figure 3 for ° months. The LEDs 20, 30 of the present invention comprise 〆5 201036201 base structures 200, 300, a light-emitting diode wafer 252, 352, a phosphor layer 254, 354, and a lens 240, 340, wherein the substrate The structure 200, 300 has a recess 250, 350, in which the LED wafers 252, 352 can be placed, and the glazing powder, layers 254, 354 are disposed in the recess 250 and cover the LED array 252, The 352 is configured to convert the wavelength of the light emitted by the wafer into another light emitting wavelength and increase the uniformity of the light color of the light emitting diodes 20 and 30. The lenses 240 and 340 are disposed on the base structures 2 and 300 to adjust the light emitting. The light emitted by the polar body wafer 252 changes its light-emitting field shape, and the base structure 200, 300 further includes at least one conductive terminal 202, 203, 302, 303 for providing the light-emitting diode chips 252, 352 to be illuminated. The voltage. In addition, the base structure is a multi-layer substrate stack structure. That is, the base structures 200, 300 are at least a first substrate 210, 310 and a second substrate 220, 320 on the first substrate 210, 310 are stacked. In other words, the base structures 200 and 300 may further include a third substrate 230 superposed on the second substrates 220 and 320. In addition, the conductive terminals 202, 203, 302, 303 are part of a multilayer metal conductive structure. That is, the base structures 200, 300 are formed by combining the multilayer metal conductive structure and the multilayer substrate stack structure. For example, the multilayer metal conductive structure includes at least a second metal layer 222 for forming its positive and negative conductive terminals 202, 203 and a first metal layer 212 between the first substrate 210 and the second substrate 220, thereby providing A thermoelectric integrated structure, such that heat generated by the light emitting diode 252 can be led out by the second metal layer 222; wherein the multilayer metal conductive structure can be formed by coating, plating a printing layer, a metal foil 201036201, a two-metal layer 212, 222, and a conductor 26 that connects the two metal layers 212, 222. The connection may be an integrally formed lead. The frame 360 or the at least two perforations (such as the first holes, 214, 215 shown in FIG. 5 and the second holes 224, 225 shown in FIG. 6) are disposed between the plurality of substrates, and in the through holes. Filling a metal (such as the conductors 260, 360 shown in Figures 2 and 3), and one of the through holes is used to provide a first metal to the second metal layer 2D, so the perforations can also be called It is a conductive hole, and the method of filling the metal can be filled by electrowinning or pouring into a metal paste or a metal glue. In addition, in order to electrically connect the LED chips 252 and 352 to the base structures 200 and 300, at least one of the wires 27, 37 is connected to the LED chip 252, and the conductive terminals 202, 203, and 302 are connected. 303. The material of the lead frame 360, the first metal layer 212 and the second metal layer 222 is composed of a copper/nickel/silver alloy (Cu/Ni/Ag) or a copper/nickel/gold (Cu/Ni/Au) alloy. The conductor layer 26 is made of silver (Ag). Further, the 'base structure 2 〇〇, 300 (that is, the first substrate 210, 310, the second substrate 220, 320 and the third substrate 230) is composed of a heat dissipation plate, a conductive plate, a circuit board or a ceramic plate, and the composition thereof The material may be individual or mixed materials such as tantalum materials, ceramic materials or metal materials. In addition, the base structure 200, 300 further includes a heat dissipating block 280, 380, and the light emitting diode chips 252, 352 are located on the heat dissipating blocks 280, 380, wherein the heat dissipating blocks 280, 380 are made of copper (Qi) or silver ( Ag), the LEDs 252, 352 are applied to the 201036201 to generate heat, and the thermal energy generated by the LEDs 252, 352 can be transmitted by the characteristics of heat conduction. Going out, in the embodiment of the present invention, the bulk 280, 380 can also be regarded as a part of the first substrate 210, 310. Referring to Fig. 4, the lens 24 of the present invention has a unique shape including a curved surface having a flat surface 242' with a flat surface at the top of the lens 240 and an inverted conical structure at the top center (eQnieal _ρ_η) 246, the lens can adjust the illuminating field shape of the dimming diode chips 252, 352 to present a lateral light field. In addition, referring to FIG. 2 and FIG. 3 together, the recesses 250 and 35 of the base structures 200 and 300 of the light-emitting two-story 20, 30 of the present invention have a side length a smaller than that of the lens 鸠, 34 〇 B. One step so that the LED chips 252, 352 can emit light in the form of a point source in the grooves 250, 350. In addition, in the embodiment of the present invention, the second metal layer is further included on the bottom of the LED 2 to form a driving circuit (not shown), that is, to provide at least one positive voltage corresponding to P. The driving circuit 'is further generates a light source by the two positive and negative conductive terminals 2〇2, 203 electrically connected to the light-emitting diode wafer μ2. Referring to FIGS. 5 to 8 and taking FIG. 2 as an example, when the first substrate 21 is stacked with the second substrate 22, the first holes 214, 215, 216, 217 and the second holes 224, 225, 226 The 227 is filled with the metal material to make an electrical connection with the driver circuit formed by the third metal layer. For example, in the case of a single wafer, the anode of the LED chip 252 can be connected to the conductive layer by using a wire 27. Then, the metal object in the second holes 225, 227 opposite to any of the first holes 215, 217 is externally connected to the 8 201036201 positive contact of the driving circuit; similarly, the light emitting diode The negative electrode of the wafer 252 can be connected to the conductive terminal 203 by the wire 27, and the metal in the second hole 224, 226 opposite to the first hole 214, 216 through any of the first holes 214, 216 is externally connected to the corresponding driving circuit. The negative electrode 'contact point is completed. The positive and negative electrodes of the light-emitting diode chip 252 can also be connected to the other conductive terminals 202 and 203 by wires 270. Please refer to FIG. 9 and FIG. 9 is a light-emitting diode of the present invention. 2〇帛一实施例A bottom view of the substrate 210. The bottom of the first substrate 210 of the LED body 20 has a third metal layer </ RTI> comprising a plurality of metal pads 218, at least two metal pads 218 of the bottom of the first substrate 210. The diode chip is connected to the positive and negative electrodes, and the positive and negative electrodes are provided in the driving circuit, and the light source is electrically connected to the light emitting diode to generate a light source. In addition, the light emitting diode 20 can also be placed in the light emitting diode 20 The plurality of bristle diode chips are in the recess 250 (the recess 250 is matched with the second figure), wherein the plurality of wafer electrical connections may be connected in series or in parallel according to requirements. Further, the inter-wafer The 〇_parallel relationship can be adjusted by using the metal 塾 218 with an external connection to the positive and negative contacts of the driver circuit and the wires with the conductive terminals 202, 203. For example, _ say 'electrical connection with the external drive circuit The metal pads 218 provide only a pair of positive and negative electrical properties. The wafer is electrically connected to the conductive terminals by the wires 27, or the positive electrode of one wafer is directly connected to the negative electrode of another wafer. One wire connection The second wafer can provide an electrical series relationship of the two wafers; wherein the positive and negative electrodes can be interchanged according to the requirements. Referring to FIG. 2 and FIG. 5 to FIG. 8 , a first wire 21 〇 has at least a first metal layer. The first metal layer has a plurality of first holes 9 201036201 holes 214, 215, 216, 217. As can be seen from Fig. 6, a second substrate 320 has at least one second metal layer 322 'the second metal The layer 222 has a plurality of second holes 224, 225, 226, 227. To provide an electrical connection between the LED chip 252 and an external power source, the first holes 214, 215, 216, 217 and the second holes 224, 225, 226, 227 are opposite to each other, and are filled with a metal to form a conductor 260 (also referred to as a conductive hole) penetrating through the first substrate and the second substrate, so that the positive and negative conductive terminals 202, 203 can be connected by the conductor 260 The external power source is electrically connected. In addition, the Q conductor 260 of the second hole 224, 225 is further configured to provide the first metal layer 212 to be electrically connected to the second metal layer 222. As shown in FIG. 7 , the third substrate 230 is superposed on the second substrate 220 , and the third substrate 230 has an accommodating space therebetween for being connected between the LED 252 and the first metal layer 222 . The wire 270 is used to protect the wiring of the light-emitting diode 2 . Finally, as can be seen from Fig. 8, the lens 240 is superposed on the third substrate 23A, and the illuminating field shape of the illuminating body wafer 252 can be adjusted. The present invention utilizes the structure of the lenses 240 and 340 to improve the light-emitting diodes of the light-emitting diodes 2 and 3, so that the light-emitting diodes 20 and 3 have a wing-shaped light-emitting field shape, and at the same time, the light-emitting diodes are matched. The wafers 252, 352 are disposed in the grooves 250, 350, and the grooves 250, 350 have a special proportional relationship with the lenses 240, 34G, so that the LED chips 252, 352 emit light in the form of an approximate point source. In addition, the light-emitting diodes 2〇, % can produce a mid-d-degree oblique light intensity, and thus the distance between the light-emitting diodes 20 and 30 is increased, or the distance from the surface to be illuminated is pulled. In the near future, the brightness between the two light-emitting diodes 20 and 3G and the light-emitting two bet 2Q, the brightness above the % is not different from each other. Therefore, under the condition of providing uniform light intensity, the present invention discloses the light of 201036201 The bodies 20, 30 can be configured with a larger spacing. In other words, when the light-emitting diodes 2, 30 are applied to the backlight of the direct-type backlight module, the light-emitting diodes 20 and 30 having a large viewing angle can effectively shorten the backlight module and the thin film transistor-liquid crystal display module. ' the distance. In addition, the wavelength of the light emitted by the structure of the light-emitting diodes 20 and 30 disclosed in the present invention ranges from 300 nanometers (nm) to 7 nanometers. Please refer to FIG. 1 and FIG. Fig. 10 is a graph showing the relationship between the light intensity and the light-emitting angle of the conventional light-emitting diode according to the light-emitting diode of the present invention, and the eleventh embodiment of the light-emitting diode C and the conventional light-emitting diode D. The brightness distribution map on the plane. It can be seen from the first diagram that the maximum intensity of the illuminating field shape provided by the conventional LED structure D is in the center normal direction, and the farther away from the center normal direction, the light intensity is decreasing. Phenomenon. However, the illuminating field shape provided by the structure of the light-emitting diode C of the present invention has a maximum field strength of about 40-70 degrees from the normal clip, and the light intensity in the normal direction is about the maximum light intensity maximum. 4〇0/〇 to 70%. It can be seen from Fig. 11 that the light-emitting radius of the conventional light-emitting diode is smaller than that of the light-emitting diode C of the present invention. Therefore, it can be seen from the above that the light-emitting diode 2 of the present invention 〇, 3〇^ can effectively change the illuminating light field of the light-emitting diode wafers 252, 352, and its wing shape The 'light field shape can make the light-emitting diodes 20 and 30 have large viewing angle illumination and a large illumination radius. Please refer to FIG. 12. FIG. 12 is a perspective view of a light-emitting diode 20 according to the present invention. 30 is a schematic diagram of the optical module 400. The backlight unit 400 includes a reflective sheet 420, a diffuser plate 440, and a plurality of light emitting diodes 20 (or two light emitting diodes). The polarizing plate 440 is disposed above the reflecting plate 420, and the plurality of light emitting diodes 20 are disposed between the reflecting plate 420 and the diffusion 11 201036201 plate 440. Further, a first one may be added above the diffusing plate 440. a diffuser film 442, a first brightness enhancement film (BEF) 460, a second brightness enhancement film 462, and a second diffusion film 444. The light generated by the light-emitting diode 20 is diffused. The plate 440 is scattered to the display panel (not shown), and the reflector 420 under the LED 2 can reflect the light scattered downwardly from the LED 20 to the diffusion plate 440 to effectively utilize the LED. 2 〇 the light emitted. The diffusion film 460 on the plate 44 has a light guiding function. In the backlight module 4, since the light emitting diode 20 has a wing-like luminous field shape, it is two phases in the backlight module 400. The arrangement distance of the adjacent light-emitting diodes 20 may be between 2 〇 cm (mm) i 4 〇 cm (mm), preferably between 25 cm (mm) and 29 cm (mm). The height and width ratio of the two adjacent light-emitting diodes 20 are between 〇5 and 丨, so that the backlight module 4〇〇 composed of the light-emitting diode 20 of the present invention can effectively reduce the light emission. The number of one poles 20 meets the light intensity and uniformity requirements of the backlight module 4〇〇. In addition, the distance 发光 between the light-emitting diode 20 and the diffusing plate 440 can be further reduced by the lateral light field characteristics of the light-emitting diode 2, thereby achieving the purpose of thinning the backlight module 4. The light-emitting diode disclosed by the invention has a special external lens and a relatively special proportional relationship between the groove and the lens, thereby adjusting the illuminating field shape characteristic of the light-emitting diode, and forming a light-refractive field reading light returning, wherein The present invention is not limited to the second and third ® wire-bonding techniques for connecting the wafer to the conductive terminals on the base structure to provide the voltage required for the light-emitting diode wafer to emit light, and the present invention is also applicable. In the flip chip packager p_Chip) technology, at least the bump 12 is generated on the wafer. 201036201 (bump) 'The wafer is flipped again to directly connect the bump to the base structure, that is, regardless of the packaging technology, as long as The lens of the special shape of the present invention is provided on the substrate structure, and the backlight module-group provided by the present invention can utilize the light-emitting diode of the present invention having a lateral light field without affecting In the case of uniform illumination and degree of shelling, the array spacing of the light-emitting diodes is increased, which can effectively reduce the luminous body to achieve the purpose of reducing costs. In addition, in order to cope with the current backlight market orientation (4), the development of the 'nuclear light-emitting diode can be created in the design of the direct-lit backlight module to achieve a thinner thickness. Moreover, the present invention is more applicable to the application of street lamps or general light sources, thereby achieving greater design flexibility and making the mold composition lower and highly competitive. The above description is only a preferred embodiment of the present invention, and the equivalent variations of the silk fabrics according to the scope of the present invention should be within the scope of the present invention. [Simple description of the drawing] 〇 Figure 1 is a schematic cross-sectional view of a conventional light-emitting diode. Fig. 2 is a cross-sectional view showing a first embodiment of the light-emitting diode of the present invention. Figure 3 is a cross-sectional view showing a second embodiment of the light-emitting diode of the present invention. Figure 4 is a cross-sectional view of the lens of the present invention. $5 is a schematic diagram of the base plate of the light-emitting diodes. The figure 6 is a schematic view of the second substrate of the first embodiment of the light-emitting diode of the present invention. $7® is a schematic view of the third substrate of the first embodiment of the light-emitting diode of the present invention. 13 201036201 FIG. 8 is a schematic view showing the addition of a lens to the first embodiment of the light-emitting diode of the present invention. Figure 9 is a bottom view of the substrate of the first embodiment of the light-emitting diode of the present invention. Fig. 10 is a graph showing the relationship between the light intensity and the illuminance of the light-emitting diode c of the present invention and the conventional light-emitting diode. Fig. 11 is a view showing the luminance distribution of the light-emitting diode C of the present invention and the conventional light-emitting diode D on a plane. Figure 12 is a schematic view of a backlight module of the present invention. ❹ [Main component symbol description]
100、20、30發光二極體 110、252、352發光二極體晶片 120、240、340 透鏡 130 >250 >350 凹槽 200 > 300 基底結構 202、203、 302、303 導電端子 210、310 第一基板 212 弟一金屬層 214 、 215 、 216 、 217 第一孔洞 218 金屬墊 220 > 320 第二基板 222 第二金屬層 14 201036201 224、225、 226 、 227 第二孔洞 230 第三基板 254'354 螢光粉層 242 曲面側壁 244 平面 246 凹錐 Ο 260 導體 360 引線框架 270 、 370 導線 280、380 散熱塊 400 背光模組 420 反光板 440 擴散板 442 第一擴散膜 444 第二擴散膜 460 第一增亮膜 ❹ - 462 第二增亮膜 15100, 20, 30 light-emitting diode 110, 252, 352 light-emitting diode wafer 120, 240, 340 lens 130 > 250 > 350 groove 200 > 300 base structure 202, 203, 302, 303 conductive terminal 210 310, first substrate 212, a metal layer 214, 215, 216, 217, first hole 218, metal pad 220, 320, second substrate 222, second metal layer 14, 201036201 224, 225, 226, 227, second hole 230, third Substrate 254'354 Fluorescent powder layer 242 Curved sidewall 244 Plane 246 Concave cone 260 Conductor 360 Lead frame 270, 370 Conductor 280, 380 Heat sink 400 Backlight module 420 Reflector 440 Diffuser 442 First diffuser 444 Second diffusion Film 460 first brightness enhancement film ❹ - 462 second brightness enhancement film 15