TW201142091A - Method for producing silicon carbide substrate - Google Patents

Method for producing silicon carbide substrate Download PDF

Info

Publication number
TW201142091A
TW201142091A TW099133738A TW99133738A TW201142091A TW 201142091 A TW201142091 A TW 201142091A TW 099133738 A TW099133738 A TW 099133738A TW 99133738 A TW99133738 A TW 99133738A TW 201142091 A TW201142091 A TW 201142091A
Authority
TW
Taiwan
Prior art keywords
single crystal
carbide substrate
tantalum carbide
back surface
producing
Prior art date
Application number
TW099133738A
Other languages
English (en)
Chinese (zh)
Inventor
Taro Nishiguchi
Makoto Sasaki
Shin Harada
Kyoko Okita
Hiroki Inoue
Shinsuke Fujiwara
Yasuo Namikawa
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of TW201142091A publication Critical patent/TW201142091A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Recrystallisation Techniques (AREA)
TW099133738A 2010-02-05 2010-10-04 Method for producing silicon carbide substrate TW201142091A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010024508 2010-02-05

Publications (1)

Publication Number Publication Date
TW201142091A true TW201142091A (en) 2011-12-01

Family

ID=44355131

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099133738A TW201142091A (en) 2010-02-05 2010-10-04 Method for producing silicon carbide substrate

Country Status (8)

Country Link
US (1) US8435866B2 (fr)
EP (1) EP2532773A4 (fr)
JP (1) JPWO2011096109A1 (fr)
KR (1) KR20120124352A (fr)
CN (1) CN102395715A (fr)
CA (1) CA2759074A1 (fr)
TW (1) TW201142091A (fr)
WO (1) WO2011096109A1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011254051A (ja) * 2010-06-04 2011-12-15 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置
WO2013054580A1 (fr) * 2011-10-13 2013-04-18 住友電気工業株式会社 Substrat de carbure de silicium, dispositif à semi-conducteur de carbure de silicium, procédé de fabrication de substrat de carbure de silicium et procédé de fabrication de dispositif à semi-conducteur de carbure de silicium
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) * 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
JP2015013762A (ja) * 2013-07-03 2015-01-22 住友電気工業株式会社 炭化珪素単結晶の製造方法および炭化珪素単結晶基板
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3254557B2 (ja) * 1997-06-27 2002-02-12 日本ピラー工業株式会社 単結晶ＳｉＣおよびその製造方法
US6153166A (en) 1997-06-27 2000-11-28 Nippon Pillar Packing Co., Ltd. Single crystal SIC and a method of producing the same
US6562131B2 (en) * 1999-07-20 2003-05-13 The Fox Group, Inc. Method for growing single crystal silicon carbide
DE60033829T2 (de) * 1999-09-07 2007-10-11 Sixon Inc. SiC-HALBLEITERSCHEIBE, SiC-HALBLEITERBAUELEMENT SOWIE HERSTELLUNGSVERFAHREN FÜR EINE SiC-HALBLEITERSCHEIBE
JP4716558B2 (ja) * 2000-12-12 2011-07-06 株式会社デンソー 炭化珪素基板
TW583354B (en) * 2001-05-25 2004-04-11 Mitsui Shipbuilding Eng Method for producing amorphous SiC wafer
US6562127B1 (en) * 2002-01-16 2003-05-13 The United States Of America As Represented By The Secretary Of The Navy Method of making mosaic array of thin semiconductor material of large substrates
US7141117B2 (en) * 2004-02-04 2006-11-28 Matsushita Electric Industrial Co., Ltd. Method of fixing seed crystal and method of manufacturing single crystal using the same
JP4694144B2 (ja) * 2004-05-14 2011-06-08 住友電気工業株式会社 ＳｉＣ単結晶の成長方法およびそれにより成長したＳｉＣ単結晶
FR2871172B1 (fr) * 2004-06-03 2006-09-22 Soitec Silicon On Insulator Support d'epitaxie hybride et son procede de fabrication
US7314520B2 (en) 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
JP5213095B2 (ja) 2007-03-23 2013-06-19 学校法人関西学院 単結晶炭化ケイ素基板の表面平坦化方法、単結晶炭化ケイ素基板の製造方法、及び単結晶炭化ケイ素基板
JP4964672B2 (ja) 2007-05-23 2012-07-04 新日本製鐵株式会社 低抵抗率炭化珪素単結晶基板
JP2009016602A (ja) * 2007-07-05 2009-01-22 Denso Corp 炭化珪素半導体装置の製造方法
JP2009117533A (ja) * 2007-11-05 2009-05-28 Shin Etsu Chem Co Ltd 炭化珪素基板の製造方法
SG159484A1 (en) * 2008-09-05 2010-03-30 Semiconductor Energy Lab Method of manufacturing soi substrate
CN102422425A (zh) * 2009-05-11 2012-04-18 住友电气工业株式会社 绝缘栅双极晶体管
CA2764900A1 (fr) * 2009-10-30 2011-05-05 Sumitomo Electric Industries, Ltd. Substrat de carbure de silicium et procede de fabrication associe
WO2011077797A1 (fr) * 2009-12-25 2011-06-30 住友電気工業株式会社 Substrat de carbure de silicium

Also Published As

Publication number Publication date
KR20120124352A (ko) 2012-11-13
EP2532773A4 (fr) 2013-12-11
WO2011096109A1 (fr) 2011-08-11
US8435866B2 (en) 2013-05-07
EP2532773A1 (fr) 2012-12-12
CN102395715A (zh) 2012-03-28
US20120009761A1 (en) 2012-01-12
JPWO2011096109A1 (ja) 2013-06-10
CA2759074A1 (fr) 2011-08-11

Similar Documents

Publication Publication Date Title
TW201142091A (en) Method for producing silicon carbide substrate
TW201128773A (en) Silicon carbide substrate manufacturing method and silicon carbide substrate
KR20120023710A (ko) 반도체 장치
TW201201279A (en) Silicon carbide substrate manufacturing method and manufacturing device
JP2012151177A (ja) 化合物半導体基板およびその製造方法
WO2011142158A1 (fr) Processus de production d'un substrat de carbure de silicium, processus de production d'un dispositif semi-conducteur, substrat de carbure de silicium, et dispositif semi-conducteur
JPWO2010131571A1 (ja) 半導体装置
TW201128710A (en) Process for production of silicon carbide substrate
JP2011243618A (ja) 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置
CA2753373A1 (fr) Substrat en carbure de silicium
CN116741639A (zh) 半导体器件的制备方法及半导体器件
JP2011256053A (ja) 複合基板およびその製造方法
TW201201284A (en) Method for manufacturing silicon carbide substrate, method for manufacturing semiconductor device, silicon carbide substrate and semiconductor device
JP2011243617A (ja) 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置
TW201217591A (en) Composite substrate having single crystal silicon carbide substrate
JP2011243640A (ja) 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置
WO2011086734A1 (fr) Procédé pour la production de substrat en carbure de silicium
WO2011108137A9 (fr) Procédé de fabrication de substrat en carbure de silicium
JP2011243771A (ja) 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置
JP2013087048A (ja) 炭化珪素基板の製造方法
TW201201286A (en) Method for producing composite substrate and composite substrate