TW201214733A - Photoreceptor element and method for producing same - Google Patents

Photoreceptor element and method for producing same Download PDF

Info

Publication number: TW201214733A
Authority: TW; Taiwan
Prior art keywords: light; layer; mqw; wavelength; inp
Prior art date: 2010-06-29

Application number

TW100122953A

Other languages

English (en)

Chinese (zh)

Inventor

Katsushi Akita

Takashi Ishizuka

Kei Fujii

Hideaki Nakahata

Youichi Nagai

Hiroshi Inada

Yasuhiro Iguchi

Original Assignee

Sumitomo Electric Industries

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2010-06-29

Filing date

2011-06-29

Publication date

2012-04-01

2011-06-29 Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries

2012-04-01 Publication of TW201214733A publication Critical patent/TW201214733A/zh

Links

238000004519 manufacturing process Methods 0.000 title claims abstract description 24
108091008695 photoreceptors Proteins 0.000 title abstract 4
230000035945 sensitivity Effects 0.000 claims abstract description 88
239000000758 substrate Substances 0.000 claims abstract description 76
239000004065 semiconductor Substances 0.000 claims description 37
238000000034 method Methods 0.000 claims description 30
150000001875 compounds Chemical class 0.000 claims description 25
229910052751 metal Inorganic materials 0.000 claims description 13
239000002184 metal Substances 0.000 claims description 13
230000003252 repetitive effect Effects 0.000 claims description 6
238000001947 vapour-phase growth Methods 0.000 claims description 2
229910052797 bismuth Inorganic materials 0.000 claims 1
JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
239000004020 conductor Substances 0.000 claims 1
229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract description 51
230000007704 transition Effects 0.000 description 58
239000007789 gas Substances 0.000 description 49
239000002994 raw material Substances 0.000 description 25
239000000463 material Substances 0.000 description 24
239000013078 crystal Substances 0.000 description 20
238000009792 diffusion process Methods 0.000 description 20
230000015572 biosynthetic process Effects 0.000 description 18
239000012535 impurity Substances 0.000 description 17
239000010453 quartz Substances 0.000 description 17
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
125000002524 organometallic group Chemical group 0.000 description 15
238000002488 metal-organic chemical vapour deposition Methods 0.000 description 13
206010034960 Photophobia Diseases 0.000 description 9
230000000052 comparative effect Effects 0.000 description 9
238000010586 diagram Methods 0.000 description 9
208000013469 light sensitivity Diseases 0.000 description 9
239000000203 mixture Substances 0.000 description 8
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
238000000354 decomposition reaction Methods 0.000 description 7
RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 7
229910052698 phosphorus Inorganic materials 0.000 description 6
239000011574 phosphorus Substances 0.000 description 6
IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 6
230000003287 optical effect Effects 0.000 description 5
239000000126 substance Substances 0.000 description 5
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
229910052799 carbon Inorganic materials 0.000 description 4
238000006243 chemical reaction Methods 0.000 description 4
230000005684 electric field Effects 0.000 description 4
230000031700 light absorption Effects 0.000 description 4
239000001301 oxygen Substances 0.000 description 4
229910052760 oxygen Inorganic materials 0.000 description 4
XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
238000003384 imaging method Methods 0.000 description 3
238000001451 molecular beam epitaxy Methods 0.000 description 3
238000012544 monitoring process Methods 0.000 description 3
230000001681 protective effect Effects 0.000 description 3
229910052814 silicon oxide Inorganic materials 0.000 description 3
239000007787 solid Substances 0.000 description 3
230000003595 spectral effect Effects 0.000 description 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
230000008859 change Effects 0.000 description 2
230000006866 deterioration Effects 0.000 description 2
230000000694 effects Effects 0.000 description 2
229910052733 gallium Inorganic materials 0.000 description 2
238000010438 heat treatment Methods 0.000 description 2
125000005842 heteroatom Chemical group 0.000 description 2
230000001771 impaired effect Effects 0.000 description 2
238000007689 inspection Methods 0.000 description 2
238000012423 maintenance Methods 0.000 description 2
238000012806 monitoring device Methods 0.000 description 2
239000012071 phase Substances 0.000 description 2
229910000073 phosphorus hydride Inorganic materials 0.000 description 2
238000012360 testing method Methods 0.000 description 2
SIJSIIFAIYLAQW-UHFFFAOYSA-N 1-tert-butyl-9h-fluorene Chemical compound C12=CC=CC=C2CC2=C1C=CC=C2C(C)(C)C SIJSIIFAIYLAQW-UHFFFAOYSA-N 0.000 description 1
SXAMGRAIZSSWIH-UHFFFAOYSA-N 2-[3-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1,2,4-oxadiazol-5-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1=NOC(=N1)CC(=O)N1CC2=C(CC1)NN=N2 SXAMGRAIZSSWIH-UHFFFAOYSA-N 0.000 description 1
JVKRKMWZYMKVTQ-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]pyrazol-1-yl]-N-(2-oxo-3H-1,3-benzoxazol-6-yl)acetamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C=NN(C=1)CC(=O)NC1=CC2=C(NC(O2)=O)C=C1 JVKRKMWZYMKVTQ-UHFFFAOYSA-N 0.000 description 1
HCVDENZMQSPJRI-UHFFFAOYSA-N 3,3,4-triethyldodecane Chemical compound CCCCCCCCC(CC)C(CC)(CC)CC HCVDENZMQSPJRI-UHFFFAOYSA-N 0.000 description 1
MGGVALXERJRIRO-UHFFFAOYSA-N 4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-2-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-1H-pyrazol-5-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)O MGGVALXERJRIRO-UHFFFAOYSA-N 0.000 description 1
DEXFNLNNUZKHNO-UHFFFAOYSA-N 6-[3-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-3-oxopropyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)C(CCC1=CC2=C(NC(O2)=O)C=C1)=O DEXFNLNNUZKHNO-UHFFFAOYSA-N 0.000 description 1
241000219112 Cucumis Species 0.000 description 1
235000015510 Cucumis melo subsp melo Nutrition 0.000 description 1
101100208382 Danio rerio tmsb gene Proteins 0.000 description 1
241000196324 Embryophyta Species 0.000 description 1
229910001218 Gallium arsenide Inorganic materials 0.000 description 1
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
241001465754 Metazoa Species 0.000 description 1
FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 description 1
238000009825 accumulation Methods 0.000 description 1
150000001412 amines Chemical class 0.000 description 1
238000004458 analytical method Methods 0.000 description 1
230000004888 barrier function Effects 0.000 description 1
230000008901 benefit Effects 0.000 description 1
DLIJPAHLBJIQHE-UHFFFAOYSA-N butylphosphane Chemical compound CCCCP DLIJPAHLBJIQHE-UHFFFAOYSA-N 0.000 description 1
238000004891 communication Methods 0.000 description 1
230000000295 complement effect Effects 0.000 description 1
230000007423 decrease Effects 0.000 description 1
210000003298 dental enamel Anatomy 0.000 description 1
238000001514 detection method Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
230000007613 environmental effect Effects 0.000 description 1
125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
230000005284 excitation Effects 0.000 description 1
230000005281 excited state Effects 0.000 description 1
238000004868 gas analysis Methods 0.000 description 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
239000010931 gold Substances 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
230000006872 improvement Effects 0.000 description 1
229910052738 indium Inorganic materials 0.000 description 1
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
239000013067 intermediate product Substances 0.000 description 1
229910052747 lanthanoid Inorganic materials 0.000 description 1
150000002602 lanthanoids Chemical class 0.000 description 1
238000005259 measurement Methods 0.000 description 1
229910044991 metal oxide Inorganic materials 0.000 description 1
150000004706 metal oxides Chemical class 0.000 description 1
238000013508 migration Methods 0.000 description 1
230000005012 migration Effects 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
238000005191 phase separation Methods 0.000 description 1
230000008569 process Effects 0.000 description 1
239000000047 product Substances 0.000 description 1
210000001747 pupil Anatomy 0.000 description 1
238000001953 recrystallisation Methods 0.000 description 1
230000009467 reduction Effects 0.000 description 1
238000012827 research and development Methods 0.000 description 1
230000004043 responsiveness Effects 0.000 description 1
229920006395 saturated elastomer Polymers 0.000 description 1
238000001004 secondary ion mass spectrometry Methods 0.000 description 1
238000009751 slip forming Methods 0.000 description 1
238000002798 spectrophotometry method Methods 0.000 description 1
239000007921 spray Substances 0.000 description 1
230000001629 suppression Effects 0.000 description 1
TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
239000012808 vapor phase Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/146—Superlattices; Multiple quantum well structures
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
- H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
- H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Nanotechnology (AREA)
Physics & Mathematics (AREA)
Life Sciences & Earth Sciences (AREA)
Biophysics (AREA)
Optics & Photonics (AREA)
Crystallography & Structural Chemistry (AREA)
Light Receiving Elements (AREA)
Manufacturing & Machinery (AREA)

TW100122953A 2010-06-29 2011-06-29 Photoreceptor element and method for producing same TW201214733A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2010147636A JP2012015170A (ja)	2010-06-29	2010-06-29	受光素子およびその製造方法

Publications (1)

Publication Number	Publication Date
TW201214733A true TW201214733A (en)	2012-04-01

Family

ID=45401871

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW100122953A TW201214733A (en)	2010-06-29	2011-06-29	Photoreceptor element and method for producing same

Country Status (6)

Country	Link
US (1)	US8822977B2 (ja)
EP (1)	EP2590232A1 (ja)
JP (1)	JP2012015170A (ja)
CN (1)	CN102959736B (ja)
TW (1)	TW201214733A (ja)
WO (1)	WO2012002144A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US9368677B2 (en) *	2011-08-01	2016-06-14	Sandia Corporation	Selective layer disordering in III-nitrides with a capping layer
JP5991036B2 (ja) *	2012-06-13	2016-09-14	住友電気工業株式会社	受光素子および光学装置
JP2014216624A (ja) *	2013-04-30	2014-11-17	住友電気工業株式会社	エピタキシャルウエハ、その製造方法、半導体素子、および光学センサ装置
JP7764826B2 (ja) *	2022-09-30	2025-11-06	住友電気工業株式会社	半導体受光素子
JP7729299B2 (ja) *	2022-09-30	2025-08-26	住友電気工業株式会社	半導体受光素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2004537854A (ja) *	2001-07-31	2004-12-16	ザボードオブトラスティースオブザユニバーシティオブイリノイ	結合した量子ドット及び量子井戸の半導体デバイス及びデバイス形成方法
JP5260909B2 (ja) *	2007-07-23	2013-08-14	住友電気工業株式会社	受光デバイス
JP5195172B2 (ja) *	2008-08-29	2013-05-08	住友電気工業株式会社	水分検出装置、生体中水分検出装置、自然産物中水分検出装置、および製品・材料中水分検出装置
JP5233535B2 (ja) *	2008-09-11	2013-07-10	住友電気工業株式会社	撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置

2010
- 2010-06-29 JP JP2010147636A patent/JP2012015170A/ja active Pending
2011
- 2011-06-15 WO PCT/JP2011/063630 patent/WO2012002144A1/ja not_active Ceased
- 2011-06-15 US US13/806,585 patent/US8822977B2/en active Active
- 2011-06-15 EP EP11800611.3A patent/EP2590232A1/en not_active Withdrawn
- 2011-06-15 CN CN201180032436.3A patent/CN102959736B/zh not_active Expired - Fee Related
- 2011-06-29 TW TW100122953A patent/TW201214733A/zh unknown

Also Published As

Publication number	Publication date
US20130099203A1 (en)	2013-04-25
CN102959736A (zh)	2013-03-06
WO2012002144A1 (ja)	2012-01-05
JP2012015170A (ja)	2012-01-19
US8822977B2 (en)	2014-09-02
CN102959736B (zh)	2015-11-25
EP2590232A1 (en)	2013-05-08

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