TW201219775A - Image acquiring device, defect correcting device, and image acquiring method - Google Patents

Abstract

An image acquiring device and method and a defect correcting device are provided to secure stable focusing in an electrode pattern or wiring pattern in a focusing detection region by implementing focusing without defect existing the focusing detection region. An image acquiring device comprises an imaging unit(121) which comprises a lens and an imaging device to magnify and photograph a part of a substrate, a position change unit which changes the view range of the imaging unit, a focusing detection unit(123) which focuses the lens on the substrate, a position control unit(156) which removes defects included in the imaging target area of the substrate from the focusing detection area, a focusing control unit(155) which fixes a focusing condition after the focusing by the focusing detection unit, and an imaging control unit(153); which controls the imaging unit to magnify and photograph a part of the substrate after fixing of the focusing condition by the focusing control unit.

Description

201219775 VI. OBJECTS OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to an image acquisition device, an image acquisition method, and a substrate defect for obtaining a partially enlarged image of a defective substrate. Defect correction device. C Previously] Background of the Invention FPD (Flat Panel Display: Flat Panel Display) such as a liquid crystal display or a PDP (Plasma Display Panel), an organic EL (Electro Luminescence) display, or a surface conduction type electronic emission display In the manufacture of various substrates such as a semiconductor wafer and a printed circuit board, in order to improve the yield, after the pattern forming process, a defect inspection device (for example, refer to Patent Document 1) checks for defects, and if there is a defect, it uses The defect correction device corrects the defect. Such defects include short-circuiting of electrodes and wiring, poor contact, disconnection, poor pattern, and foreign matter such as particles or photoresist adhering to the surface of the substrate. [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Laid-Open Patent Publication No. 2009-192358 (Patent Document 1) SUMMARY OF THE INVENTION PROBLEM TO BE SOLVED BY THE INVENTION A defect inspection device and a defect correction device are improved to be inspected. After the defect detection accuracy is optimized, the electrode pattern or the wiring pattern of the object to be inspected in 201219775 is photographed, and a short circuit of the electrode or the wiring is detected than the image of the pattern image and the sample pattern. However, in the field of focus detection in the field of measurement, there is a problem that a foreign object having a high degree of shape is involved, and there is a problem that the focus is focused on the foreign matter and the electrode pattern or the wiring pattern is blurred. The present invention has been made in view of the above, and an object thereof is to provide an image acquisition device, a defect correction device, and an image acquisition method that can stably focus a focus on an electrode pattern or a wiring pattern. Means for Solving the Problem In order to achieve the object of solving the above problems, the image acquisition device of the present invention acquires a partially enlarged image of a defective substrate, and includes an imaging unit having a lens and a camera. a component for amplifying a portion of the substrate to be imaged; a position changing unit for changing a field of view of the imaging unit on the substrate; and a focus detecting unit for focusing on the substrate of the lens; focus detection The position control unit controls the position changing unit to control the defect included in the image acquisition target area of the substrate when the focus detection unit performs focusing. a focus detection area retractor of the focus target; a focus control unit that fixes a focus condition after focusing by the focus detection unit; and an imaging control unit that fixes a focus condition by the focus control unit The imaging unit enlarges a part of the substrate and the imager. Further, the defect correction device of the present invention is configured such that the laser light is irradiated onto the substrate to repair the defect of the substrate, and the image acquisition device, the 201219775 and the defect correction unit are based on the imaging unit of the image acquisition device. The acquired image is irradiated with the aforementioned laser light on the substrate to perform a repair process. Further, in the image acquisition method of the present invention, the image capturing unit captures a partially enlarged image of the defective substrate, and includes a retreating step of changing the field of view of the imaging unit on the substrate. In the field, the defect in the image acquisition target area of the substrate is evacuated from the focus detection area to be the focus target; the focus detection step is performed by focusing the lens of the imaging unit on the substrate; and the focus fixing step is to fix the focus detection The focus condition after the focus is performed in the step; and the imaging step is to enlarge a part of the image of the substrate by using the focus condition fixed in the focus fixing step. According to the present invention, when focusing is performed, the defect included in the image acquisition area of the substrate is focused in a state in which the focus detection area to be focused is retracted, and the focus condition after the focus is fixed is imaged. A part of the substrate 'so can be focused in a state where the defect itself is not in the field of focus detection', so that the focus can be stably focused on the electrode pattern or the wiring pattern in the field of focus detection. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a block diagram showing a schematic configuration of a defect correction system having a defect correction device according to a first embodiment. Fig. 2 is a block diagram showing the configuration of the defect correcting device shown in Fig. 1. Fig. 3A is a view for explaining the field of focus detection in 201219775 in the field of view of the imaging unit shown in Fig. 2. Fig. 3B is a view for explaining the field of focus detection in the field of view of the gantry shown in Fig. 2. Fig. 4 is a flow chart showing the processing procedure of the pattern matching processing in the defect correction device shown in Fig. 2. Figure 5 is an example of a defect intelligence. Fig. 6A is a diagram for explaining the coordinate replacement of the evacuation condition acquisition unit shown in Fig. 2. Fig. 6B is a diagram for explaining the coordinate replacement of the retreat condition acquisition unit shown in Fig. 2 . Fig. 7A is a diagram for explaining the retreat condition acquisition processor performed by the retreat condition acquisition unit shown in Fig. 2 . Fig. 7B is a diagram for explaining the retreat condition acquisition processor performed by the retreat condition acquisition unit shown in Fig. 2 . Fig. 8 is a view showing a conventional defect image. Fig. 9 is a view showing a defect image of the defect correction device shown in Fig. 2. Fig. 10 is a block diagram showing a schematic configuration of a defect correcting device of the second embodiment. Fig. 11 is a flow chart showing the processing procedure of the pattern matching processing in the defect correcting device shown in Fig. 10. Fig. 12 is a view showing an image processor shown in Fig. 11. Fig. 13 is a flow chart showing the processing procedure of the pattern matching judging process shown in Fig. 11. 201219775 Figure 14 is a table of defects on the board. Fig. 15 is a view for explaining the rack-removing condition acquisition processor of the controller of the retreating portion shown in the second circle. The avoidance condition acquisition unit and Fig. 17 are diagrams for explaining the evacuation condition acquisition processor of Fig. 2 . The avoidance condition acquisition unit performs the first method to explain the evacuation condition acquisition processor shown in the (9). The warranty pick-up unit performs the Fig. 19 diagram for explaining the retraction condition acquisition of Fig. 2.郷 〇 〇 进行 进行 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 The retraction condition acquisition unit performs a twenty-first embodiment of the defect modification block diagram of the embodiment. Fig. 22, which is another configuration of the apparatus, shows a block diagram of the defect of the embodiment. [iST square package] of the other configuration of the device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the embodiment of the present invention is modified by, for example, a glass outer guide ==:=: Further, it is limited to this embodiment. In addition, the same parts are given the same symbols. . Loading (Embodiment 1) Embodiment 1 will be described. Fig. 1 is a block diagram showing a schematic configuration of a positive device in the absence of the 201219775. The defect correction system is a part of the manufacturing system of the substrate, and for example, the production data management server 3 with the defect inspection device integrated with the production line information, and the connection job (4) "repository 5" for the management of the defect The report of the defective defect management ship 4, the defect division 6 and the lack of the secret device just connected through the network 2. First, the outline of the processing of the entire system will be described. The defect inspection device i is formed, for example, in the lithography step. When the substrate having the photoresist pattern is transported by the transport system, 'corresponding to the inspection condition of t; detecting the disconnection, pattern defect, and foreign matter in the substrate, and obtaining the coordinate position on the substrate indicating the defect. Defect location coordinates and size information indicating the size and size of the defect. The lack of information management server 4 uses FTp (File

The information is acquired via the network 2, and is registered in the defect information database 5, and the registered content is transmitted to the production material management server 3. In the substrate after the defect inspection device performs the defect inspection, the defective substrate is transferred to the defect sorting device 6. The defect sorting means 6 requests the defect information management server 4 for the missing position coordinates and the size information about the defect of the substrate to be classified by the defect. The defect sorting means 6 takes a defect image in accordance with the defect information transmitted from the defect information official server 4, and classifies the type of the defect by the image processing function. The defect information management server 4 acquires the classification result via the network 2, registers it as the defect information in the defect report database 5, and transmits the registered content to the production material management server 201219775. The substrate is transferred to the defect correction device just. The defect correction device has just requested the defective information management ship 4 to display the defect position of the substrate to be corrected and the defect information of the category. The defect correction device 100 captures a defect based on the defect information transmitted from the defect information management server 4 and captures the defect by the comparison of the captured defect image with the predetermined sample pattern image, and sets the laser light. In the non-irradiation field, the electrode pattern or the wiring pattern is excluded from the field of laser processing. After the mask is set, the laser light is irradiated to correct the defect on the substrate. / Lack 1 ^ Positive I set 1G0 The detection of the focus position before the defect imaging is performed in the state where the defect is not in the focus detection field of the range of the measurement. Therefore, the defect correction device (10) will be described in detail. The second® system is a block diagram of a schematic configuration of the defect correction device 100 shown in Fig. 1. The image acquisition device of the patented towel is in the defect u device 100. The frame 11 is shown in Fig. 2, the gantry moving unit 113, the microscope unit 120, the input unit 124, the communication unit 143, and the memory unit. 144, ^ 3 '', 1 is not the output unit 145 of the Qpl 46 and the control unit 15 is configured. As shown in Fig. 2, the defect correction device 100 includes a gantry 110 on which a substrate 111 on which a defect is corrected is placed, a gantry moving portion 113 that horizontally moves the gantry 110, and a substrate placed on the gantry 11G as viewed from above. The microscope unit 120 of U1 outputs lasers ', lasers, lasers, lasers, lasers, lasers, lasers, lasers, lasers, lasers, lasers, lasers, lasers, lasers, lasers, lasers, lasers, lasers, lasers, lasers, lasers, lasers, lasers, lasers, lasers, lasers, lasers The input unit 142, the communication unit 143 that communicates between the network 2 and the external device according to the predetermined format, and the memory unit 144 that stores various programs and various sample pattern images of the wiring and the electrodes, including the use of 201219775 The output unit 145 of the display unit 114 that does not receive the image or the various information acquired by the microscope unit 120, and various programs and parameters that are read from the storage unit 144, and controls the control unit 15 of each unit in the defect correction device 1A. The substrate 1丨1 to be corrected is, for example, a glass substrate for FPD, a semiconductor substrate, a printed substrate, or the like. A plurality of holes are provided on the mounting surface of the gantry 11 。. The substrate 111 is suspended in a state in which the gas is supplied from a pump (not shown) to the holes. In this state, the substrate 1U can be held on the gantry 11 by a fixing member (not shown). Alternatively, the plurality of holes may be connected to a vacuum pump (not shown), and the substrate ill placed on the gantry 11A may be adsorbed and fixed to the gantry 110 by suction from the holes. Further, in addition to the above, the holding mechanism for holding the substrate lu on the gantry 110 may be a mechanical mechanism such as a support pin or a splint mechanism. The gantry 110 is movably moved in a plane orthogonal to the optical axis of the objective lens 129, which will be described later, by the gantry moving portion 113, and the position of the substrate 1U on the plane of the objective lens 129 is changed. The gantry moving unit 113 changes the position of the field of view of the imaging unit 121 on the substrate 111 by moving the gantry 11A. The microscope unit 120 includes an imaging unit 121 including an imaging element such as a CCD sensor or a CMOS sensor, and an illumination unit 125 ′ for illuminating the substrate lu on the gantry 11 并 and functions as a part of the acquisition substrate 1U. The function of the imaging unit of the enlarged image. The illumination light outputted from the illumination unit 125 is reflected by the half mirror 126, and is illuminating the substrate ill through the objective lens 129 as light coaxial with the observation optical axis αχ of the substrate lu. Moreover, the image of the substrate 111 thus illuminated includes the observation light of the objective lens 129, the half mirror 138, the half mirror 126, the half mirror 124, and the imaging lens 122 disposed along the observation optical axis 2012 201219775 The magnification is, for example, several times to several tens of times and is imaged on the light receiving surface of the imaging unit i2i. The image data acquired by the imaging unit 121 is input to the imaging control unit 153, and is subjected to various image processing, and then output to the display unit 146. Thereby, the image of the field of view acquired by the microscope unit 12A is displayed approximately in the display portion 146. The field of view of the imaging unit 121 that passes through the observation optical system is wider than that of a single shot field. The field illuminated by the illumination unit 125 is at least a wide range of fields of view. In other words, at least the field of view is illuminated by the illumination from the illumination unit 125 from above. The objective lens 129 is held by the rotator 128 at the upper portion of the substrate 111 placed on the gantry 11A. The objective lens 129 is detachably attached to the rotator 128, and is disposed on the gantry 110 in response to the rotation of the rotator 128 and the sliding operation. Further, the rotator 128 can be moved up and down by the focusing mechanism 127, and the focus detecting unit 123 raises and lowers the rotator 128 by controlling the focusing mechanism 127 to focus the substrate lens 129 on the substrate ill, thereby optimizing the focus position. The laser irradiation unit 130 includes a laser light source 131 that outputs laser light that is irradiated onto the substrate 111, and an LED 132 that outputs laser light for adjusting the laser light from the laser light source 131 and the guidance light in the field of view of the imaging unit 121; The transformer 135' functions as a beam shaping unit that shapes a beam cross-sectional shape (hereinafter referred to as a laser cross-sectional shape) of the laser light from the laser light source 131 into a desired shape; and the field setting unit 136 controls Under the control of the unit 150, the beam cross-sectional shape of the laser light for defect repair by the laser irradiation unit 130 (the cross-sectional shape perpendicular to the optical axis of the laser light) is adjusted, and the laser irradiation unit 130 functions as a defect correction. The laser light is irradiated onto the substrate 111 to correct the defect by irradiating the laser light that has been spatially modulated with the defect detected by the image obtained by the image portion 121 of the microscope unit 120. The guided light from the LED 132 is reflected by the half mirror 133 whose optical axis coincides with the optical axis of the laser light source 131. Further, the laser light from the laser light source 131 and the guided light from the LED 132 are transmitted to the mirror 134, the spatial light modulator 135, and the high mirror 137, and then reflected by the half mirror 138, whereby the optical axis and observation thereof Optical axis AX. Therefore, the laser light and the guided light which have been reflected by the half mirror 138 are transmitted through the objective lens 129 to the substrate 111 on the gantry 110 from above along the observation optical axis AX. The spatial light modulator 135 as a spatial light modulator has a configuration in which micromirrors of a micro device are arranged in a quadratic array. The reflection angle ' of each micromirror' can be switched to at least either the opening angle and the closing angle under the control from the control unit 150. The angle of the stomach opening is the angle of the substrate lu that is reflected by the micro-mirror reflected in the micro-mirror in this state, and the angle of the so-called closing angle is reflected by the micro-mirror reflected in the state. The light illuminates the angle of the laser damper of the light shielding member or the absorbing member (not shown) provided outside the optical path. Therefore, the respective reflection angles of the micromirrors arranged in the second-order array are switched to the opening angle or the closing angle, whereby the sectional shape of the laser light projected on the substrate lu can be controlled. Thereby, the cross-sectional shape of the laser light from the laser light source m can be adjusted to the shape of the repair pattern and then irradiated onto the substrate 111. The repair pattern is a repair pattern in which laser light is irradiated outside the normal wiring pattern. For example, when the defect such as repairing the pattern is removed, the micromirror corresponding to the field of normal wiring or the like in the photographing field is turned off. Micromirrors in other fields 8 12 201219775 is the pattern of opening angles. Furthermore, the spatial light modulator 135 can also be provided, for example, by TEXAS INSTRUMENTS Incorporated (Texas Instruments).

Digital Micromirror Device (Digital Micromirror Device, called DMD). The field setting unit 136 controls the reflection angle of the micromirrors of the spatial light modulator 135 in accordance with the pattern of the repair portion input from the control unit 150, thereby controlling the cross-sectional shape of the laser light to the shape of the repair pattern. Further, the setting of the repair pattern can be set in accordance with the shape of the defect in addition to the normal wiring pattern as described above. In this case, as long as the cross-sectional shape of the laser light is matched with the defect shape, the micromirror corresponding to the defect field is turned on, so that the micromirror in the field other than the defect field is turned off, that is, the 〇 input portion 142 is used by the keyboard and the slide. The mouse and the like are combined with a GUI (Graphical User Inetrface) displayed on the display unit 146 to obtain an input instruction of various setting parameters and the like from the latter. The communication unit 143 is configured by using a communication interface or the like, and receives defect information of a defect of the substrate to be processed from the external device, and transmits various materials including image data to the outside. The memory unit 144 is constructed using a hard disk, R〇M, RAM, and a portable memory medium, and is pre-recorded (4) to control a control program for various operations of the missing device ι. Further, the memory unit 144 responds to the steps of the substrate (1): the sample pattern image of the memory (and wiring) pattern. "The 4146 is configured to display an observation image, set information, and notification information, etc. The μ control unit 150 includes a defect information acquisition unit 151, a focus detection area display image control unit 153, and a retreat condition acquisition unit. 154. Focus control 13 201219775 P frame. The control unit 156' and the pattern matching processing unit 157. The defect report acquisition unit 1S1 transmits the previous step from the defect report processor 4 via the network 2 via the communication unit 143. Defect information obtained by the defect inspection device 1 and the defective blade device 6. This defect information is a position on the substrate 111 that is a defect of the specific processing target, and includes the steps of the substrate 111 to be processed and the center of gravity of each defect. The coordinate value and the coordinate on the substrate which is the size information indicating the lack of size and which is external to the quadrilateral of each defect. The focus detection area calculation unit 152 inputs the focus detection 7 page field with respect to the input unit 142. The pixel coordinates of the imaging unit 121 indicate the relative coordinate value of the field of view, the magnification of the objective lens m or the imaging mirror #122, and the imaging unit 121 used. In the case of the pixel size, the focus detection area of the photographing 121 is converted into the actual coordinates on the gantry 11〇 and is recorded in the memory unit 144. Since the focus detection field depends on the focus detection unit 丨23, it is necessary to correspond to the focus detection unit. For example, as shown in FIG. 3A, the focus detection area is assumed to be the focus detection area A0 (square with 240 pixels as one side) shifted from the center Fc0 of the field of view FC of the imaging unit 121 to the upper right. For example, when the magnification of the objective lens 129 is 4 times, 1 time, 20 times, 50 times, the magnification of the imaging lens 2 is 〇5 times, and the pixel size of the imaging unit 121 is 65"m/ In the case of a pixel, the magnification of the objective lens 129 is 20 times, and the focus detection field A is converted into the gantry 11 shown on the third stage shown in FIG. 3B based on the calculation of the focus detection area calculation unit 152. In the field of view field Fs (corresponding to the field of view Fc of the imaging unit 121), the focus detection field in the upper right side of the FsO (with 8 14 201219775 156 μm as the side m彡). The focus detection field calculation unit I" memorizes the memory unit H4 About changing to the platform u Information on the field of recording after the actual coordinates. Further, in the example shown in Fig. 3A, the coordinates of the center FcO of the field of view Fc are set to (64 ◦, wound). Further, in the example shown in the first diagram, the coordinates of the center FsO of the field of view Fs are set to (〇, 〇). The imaging control unit 153 controls imaging processing of the imaging unit 121. The focus control 4155 is in the field of the in-service detection field, and (4) the focusing mechanism fixes the rotator i28 to the height at which the focus condition is optimized, thereby fixing the focus condition of the ...HP123. After the focus condition by the focus control unit I55 is fixed, the imaging control unit 153 causes the imaging unit to enlarge the portion of the substrate on which the defect of the correction target is located and capture the image. When the target 111 is moved by the defect information acquisition unit 151 to move the substrate 111 so that the center of gravity of the defect to be corrected is located at the center Fs of the field of view Fs on the gantry 110, the avoidance condition acquisition unit 154 will It is judged whether the defect is located at the position of the focus detection field_. In other words, the evacuation condition acquisition unit 154 changes the position of the field of view Fs on the substrate U1 to maintain the position of the field of view Fs on the gantry 110 so that the position of the weight U in the image acquisition area is located on the gantry 110. When the center FsO of the field Fs is determined, it is judged whether or not the defect is located in the focus detection area S0. When the defect condition acquisition unit 154 determines that the defect position to be corrected is in the focus detection area SG, the back-off distance from the focus detection area S0 is calculated based on the center-of-gravity coordinates of the defect included in the defect report and the size information of the defect. In the retracting direction, the calculated retreat distance and the retracting direction are obtained as the retreat conditions so that the defect is outside the focus detection field. 15 201219775 The evacuation condition acquisition unit 154 moves the substrate lu so that the position of the center of gravity of the defect is located in the middle of the field of view Fs on the gantry 11G. When the defect is located in the focus detection area SG , stand = system. P156 controls the (four) moving unit 113, and when the recording unit (2) is in the focus, the focus of the correction target is determined from the focus detection target to be focused on. The gantry control unit 156 follows the retreat condition acquisition unit (9). The retreat condition of β is such that the defect of the correction artifact is retracted from the field of focus detection. Further, the gantry control unit 156 controls the gantry moving unit 113 to move the substrate 111 after the focus control unit 155 is fixed, whereby the center of gravity of the defect to be corrected is located at the center Fs0 of the field of view Fs on the gantry 110. The imaging (fourth) i53 table control unit 156 causes the center of gravity of the defect to be corrected to be positioned at the center Fs of the field of view Fs, and then causes the imaging unit ΐ2 to enlarge a portion of the substrate 111 for imaging. In other words, when the image is captured and the defect correction processing is performed, the gantry control unit 156 moves the gantry 11 〇 horizontally based on the defect coordinates of the defect information so that the center of gravity of the defect of the correction target is located at the center of the field of view of the microscope unit 12A. Thereby, the relative position between the microscope portion 12A and the substrate ill is controlled such that the center of gravity of the defect is located at the center of the field of view of the microscope portion 12A. The pattern matching processing unit 157 processes an image (defect image) of the substrate πι including the defect captured by the imaging unit 121 under the control of the imaging control unit 153, and performs pattern matching. The pattern matching processing unit 157 determines the electrode (or wiring) of the defective image using the sample pattern image corresponding to the type of the work program of the substrate lu from the sample pattern image sheet which is requested in advance and stored in the memory unit 144. Whether the pattern is consistent with the electrode (or wiring) of the sample pattern image 8 16 201219775 'Draws defects such as foreign matter or poor pattern. The control unit 15 sets the correction target field based on the processing result of the pattern matching of the pattern matching processing unit I57, and sets the mask for the non-irradiation field of the laser light in order to exclude the field other than the correction target field from the laser processing field. set up. Thereafter, the control 150 causes the field setting unit 136 to adjust the beam wearing shape of the laser light for repairing defects, and then irradiates the laser light to the laser light source 131 to perform defect correction processing. Next, the defect correction device 1 shown in Fig. 2 will be described before the defect image obtained by the pattern matching process is obtained and the pattern is compared. Fig. 4 is a flow chart showing the processing procedure up to the pattern matching processing in the defect correction device 1A shown in Fig. 2. As shown in FIG. 4, first, the initial setting process of the focus field is performed (step S1). The process is performed by the focus detection area calculation unit 152 based on the field of view of the focus detection area with respect to the pixel coordinate system of the imaging unit 121. Relative coordinate values, magnification of the objective lens 129 and imaging lens 122, and imaging used. The pixel size of the 卩121 is converted into the actual coordinate ‘ on the gantry no', and is stored in the memory unit 144. Furthermore, since the focus detection field depends on the focus detection unit 123, the initial setting of the focus detection field needs to be performed every time, and can be input, for example, periodically, and input into the initial setting processing in the focus detection field. The type of various information is not limited, and may be, for example, a type registered in advance in the initial setting file on the control software of the defect classification device 6. Then, when the substrate 111 is placed on the gantry 11 ,, the defect information acquisition unit 151 acquires the defect information acquisition processing (step μ) of the substrate information of the substrate and the image acquisition target of the substrate. The defect information is, for example, shown in the defect list 1 shown in FIG. 5, corresponding to the defect number attached to each defect, the center of gravity coordinate of the ridge, and the upper left apex of the non-adjacent vertices circumscribing the quadrangle of the defect. Coordinates and coordinates of the bottom right vertex. The defect information acquisition unit 151 acquires defect information from the defect information management device 4 via the network 2 via the communication unit (4). Further, the memory unit 144 may memorize the defect information. The defect information acquisition unit 151 may acquire the defect information from the memory unit 144. Then, the evacuation condition acquisition unit 154 performs calculation based on the defect information acquired in the defect information acquisition processing (step S2), thereby moving the substrate so that the defect center of gravity of the correction target is located on the gantry 11 〇 field of view Fs At the center FsG, it is judged whether or not the defect is located in the focus detection area so (step S3). In other words, the evacuation condition acquisition unit 154 determines in step S3 that the position of the field of view Fs on the substrate 1U is to be changed so that the defect of the correction target, that is, the image of the substrate 111, is defective in the target region. When the center of gravity is at the center of the field of view Fs, whether the defect is located in the focus detection field S0. Here, the defect list T1 as exemplified in FIG. 5 is when the center of gravity coordinate of the defect and the vertex coordinates of the circumscribed square of the defect are based on the origin different from the field of view Fs memorized by the memory unit 144. The evacuation condition acquisition unit 154 must replace the coordinates of each coordinate with respect to the origin of the field of view Fs. For example, when judging the defect D of the defect number 1 corresponding to the defect list T1 of FIG. 6A, first, the actual coordinates of the center of gravity pg of the defect d on the gantry no are as shown in FIG. 6B. The general replacement is the same coordinates (〇, 〇) as in the field of view field Fs 8 8 201219775 s0. Next, the evacuation condition acquisition unit 154 replaces the coordinates of the upper left vertex of the fourth (four) R1 and the coordinates of the lower right vertex of the defect D with the relative coordinates of the weight 'uPg as the origin. Then, when the center of gravity Pg of the defect D on the moving substrate 11U is located at the center Fs of the field of view Fs on the gantry 11A, the escaping condition obtaining unit 154 is located in the focus detection area S? When the defect condition acquisition unit 154 determines that the defect to be corrected is located in the focus detection area S0 (step S3: Yes), the evacuation condition acquisition unit 154 performs the evacuation condition acquisition processing (step S4)', which is obtained based on the defect information acquisition processing (step magic). The size information of the defect information sheet is obtained as a retreat condition for the defect in the focus detection field so as the retreat distance and the retraction direction of the correction target defect. For example, in the case of the defect D shown in Fig. 6B, as shown in Fig. 78, when the center of gravity center position pg is located at the center Fs of the field of view Fs on the gantry, the circumscribed quadrilateral R1 of the defect D is The focus detection field is as follows. In this case, the evacuation condition acquisition unit 154 calculates the minimum distance that the external quadrilateral of the defect 1) does not overlap with the retraction distance required for the focus detection field S0. In this case, if the external quadrangle R1 of the defect D is moved to the X-axis left direction in the figure, the overlap of the focus detection field and the external quadrangle R1 can be eliminated only by moving the distance L1 of 7〇11111. Therefore, the evacuation condition acquisition unit 154 sets the defect D to the left side of the X-axis direction of the gantry 110, and retreats at a retreat distance of 70 um as a retreat condition. Further, since the field of the defect is expressed by a quadrilateral, it is sufficient to retreat the circumscribed quadrilateral toward the primary direction perpendicular to either side of the circumscribed quadrilateral. The gantry control unit 156 performs the retreat processing for retracting the defect to be corrected from the focus detection S0 in accordance with the retreat condition acquired by the retreat condition acquisition processing (step) (step S5). Specifically, the gantry control unit 令100 causes the gantry moving unit 113 to move the gantry 110 by only a distance [丨(7〇山^) to the left side of the X-axis direction set by the retreat condition acquiring unit 154 with respect to the defect D, whereby As indicated by the arrow γι in Fig. 7A, the rib of the focus detection field is retracted from the external quadrangle R1 of the defect d. Thereafter, the focus detection unit 123 performs focus detection processing (step S6) for focusing on the focus detection area S0 of the pair of lenses 129 of the imaging unit 对于21 with respect to the substrate lu. In the step S6, the focus detection unit 123 performs the focus detection processing in a state where the defect is not located in the focus detection area S〇 by the retreat processing of the step S5. Further, after the focus detection unit 123 ends the focus, the focus control unit 155 performs focus fixing processing for fixing the combined focus condition (step S7). After the focus fixing process (step S7), the gantry control unit 156 performs a position changing process of setting the center of gravity of the defect to be corrected to the center FsO of the field of view Fs (step S8). Specifically, the gantry control unit 156 causes the gantry moving unit 113 to move the gantry 11A by a distance 11 (70 um) in the X-axis left direction with respect to the defect D, whereby the defect is caused as indicated by an arrow Y2 in FIG. 7B! The center of gravity Pg is located at the center FsO of the field of view Fs. After that, under the control of the imaging control unit 153, the imaging unit 121 performs an imaging process of enlarging a part of the substrate 111 and capturing the image in a state where the center of gravity of the defect to be corrected is located at the center F s 0 of the imaging field of view F s . (歩20 201219775 Su). The image captured by the image capturing processing is stored in the storage unit 144 in addition to being displayed on the display unit 146. X can also be transmitted to the defect information management server 4 via the network 2 via the communication unit 143. Next, the pattern matching button 157 processes the image of the lion ice photographing, performs pattern comparison (step S12), and outputs the processing result. On the other hand, the evacuation condition acquisition unit 154 determines that the defect to be corrected is not in the focus detection field SG (four) (step S3: N), and since it is not necessary to make the defect retreat, the gantry control unit 156 performs the center of gravity of the correction target defect. In the center F_position change processing of the field of view Fs (step S9), the focus detection unit 123 performs focus detection processing (step sio). Then, the imaging control unit 153 performs an imaging process of enlarging a portion of the substrate and capturing the center of gravity of the defect to be corrected in the imaging region Fs (step Sli). Next, the pattern matching processing unit 157 processes the image captured by the imaging unit 121, performs pattern matching processing (step S12), and outputs the processing result. Here, in the past, as shown in the eighth diagram, when the defect D having a high height is superimposed on the focus detection field of the field of view Fe of the imaging unit, the focus will be defective, and the electrode pattern or the wiring pattern located below the defect D will be Unclear and unable to clear 'can not ride the positive correction processing.蚵 , , , , , , , , , , 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 摄像 AG AG Fe AG AG Jiahua. In other words, - the type of mode! In the focus detection position, as shown by the arrow Yla in Fig. 9, at the focus detection: before the base oil on the gantry 110 is moved by only the distance 仏, thereby taking 21 201219775 in the external quadrilateral R1 self-focus detection of the defect D In the state where the domain so is retracted, the focus position is optimized. Therefore, since the defect itself is not in the field of defect focus, the defect correcting device does not itself produce a focus focusing on the defect. Therefore, the defect correcting device (10) can stably perform the position of the electrode pattern or the wiring pattern formed on the substrate (1), and can obtain an image of a sharp electrode (or wiring) pattern. Moreover, since the defect correction device 100 can correctly acquire the electrode (or wiring) pattern, the material setting in the non-illumination field for setting the laser light does not become an error in the field of eliminating the laser protection field, and M performs the defect correctly and correctly. Correction processing. Therefore, in the defect correcting device 1, since the mask-like error can be avoided, the Wei force can be improved, and (4) is reduced by the corresponding time of the device operator when the mask setting error occurs. (Embodiment 2) Next, Embodiment 2 will be described. In the second embodiment, the case where only the center of gravity and the coordinates of the defect can be obtained as the defect information will be described. Fig. 1 is a block diagram showing a schematic configuration of a defect correcting device of the embodiment 2. As shown in Fig. 10, the defect correcting device of the second embodiment has a configuration in which the control unit 250 having the same function as the control unit 15 is provided instead of the control unit 15 shown in Fig. 2 . The control unit 25G further has an image processing unit 253 that performs predetermined processing on the image captured by the imaging unit 121, compared to the (four) portion 15G. The image processing unit 25 processes the defect image processed by the imaging unit 121 to obtain the defect size of the correction processing target. The image processing unit (5) requests 22 201219775 to use a coordinate ‘ on the substrate hi which is not adjacent to the apexes of the quadrilaterals, and the size of the defect indicating the correction processing target. Therefore, the evacuation condition acquisition unit 154_the defect information package _ the center of gravity coordinate and the size of the defect obtained by the image processing unit acquires the retreat distance from the focus detection field in the acquired image object field of the substrate. With the direction of retreat. Next, in the defect correction device 200 shown in Fig. 10, the process of obtaining the pattern matching using the missing image for pattern matching processing will be described. Fig. 11 is a flow chart showing the processing procedure of the defect correction device shown in Fig. _ to the processing of the pattern comparison. As shown in Fig. 11, first, the focus detection area calculation unit 152 performs initial setting processing in the focus detection area in the same manner as step S1 in Fig. 4 (step S21). When the substrate U1 is placed on the gantry 11A, the defect information acquisition unit 151 performs defect information acquisition processing for acquiring defect information of the ruthenium substrate 111 (step S22). Here, the defect information corresponds to the center of gravity coordinates of the defect number and the defect attached to each defect. Next, the defect correction device 200 captures a defect image in a state in which the center of gravity of the defect of the correction target is in the center of the field of view, and determines that the image of the shai defect image matches the sample pattern image by the pattern matching processing unit. The comparison judgment processing (step S23). Next, the control unit 250 determines whether or not the pattern included in the defective image matches the sample pattern based on the determination result of the pattern matching processing unit 157 in the pattern matching determination processing (step S24). The control unit 250 determines that the defective image contains Pattern and sample pattern one 23 201219775 Time (step S24: Yes), since it can be judged that a sharp electrode (or wiring) pattern image in which the focus is focused on the electrode pattern or the wiring pattern instead of the defect can be obtained, so the defect is still used. The image is subjected to defect correction processing. In contrast, when the control unit 250 determines that the pattern included in the defective image does not match the sample pattern (step S24: No), it can be determined that the focus is focused on the defect and not on the electrode pattern and the wiring pattern. Electrode (or wiring) pattern image. Therefore, in order to make sure that the defect can be reliably retracted from the focus detection field, the image processing unit 253 first processes the defective image obtained in the pattern matching determination process, and performs round image processing for determining the defect size indicated by the defective image ( Step S25). The image processing unit 253 performs a wrap-around process or the like on the defective image, thereby obtaining a defect 〇 externally connected to the non-adjacent two sides of the quadrangle R2 as in the TF of FIG. έΡ 1 P22 is a coordinate of the field of view fc of the imaging unit 121, and the obtained coordinates of the two vertices P21 and P22 are converted into coordinates on the gantry 11〇. Next, the evacuation condition acquisition unit 154 performs a process of processing (step S22) the center of gravity of the defect included in the defect information acquired by the defect, and the image processing (step S25) is performed by the image processing unit 253. The defect size 'Land' moves the pure lu so that the defect of the correction target is the center Fs_ of the field of view Fs on the gantry 110, and whether the defect is located in the focus detection area S0 (step S33) e 'retraction condition acquisition unit 154· Correction (4) When the defect is located in j = domain SG (Na 33: know), then the retreat condition is 2Γ34), the processing is based on the center of gravity coordinates and graph of the defect

The size of the unmade defect of β is obtained from the correction (4). 24 201219775 The retreat distance and the retraction direction of the field so. Then, in the same processing sequence as step S11 and step su shown in step S5 shown in the disc loss map, the evacuation processing (step S35), the focus detection processing (step gamma), the focus fixation processing (step S37), and the correction target are performed. The position of the center of gravity of the defect is changed in the center FsO of the field of view Fs (step phantom 8), the imaging process (step mash and pattern matching process (step S42), and the processing result is output. i 5 4 judges that the defect of the correction target is not located in the focus detection field so (step S33: No), since it is not necessary to evacuate the defect, the same processing as step S9 to step S12 shown in Fig. 4 is performed. The defect of the correction target is placed in the center FsO of the field of view Fs (step-fantasy 9), the focus detection process (step S40), the imaging process (step S41), and the pattern comparison process. (Step S42), and outputting the processing result. Here, the pattern matching determination processing shown in Fig. 11 will be specifically described with reference to the flowchart shown in Fig. 13, as shown in Fig. 13. In the pattern matching determination process, the position of the correction target is shifted to the center of the field of view FsO (step S51), and the focus is performed by the gantry moving unit 113 of the gantry control unit 156. After the focus detection processing of the detecting unit 123 (step S52), imaging processing of the image of the substrate on which the defect to be corrected is generated is performed (step S53). Next, the pattern matching processing unit 157 is stored in the memory unit 144 in advance. Among the sample pattern images, the sample pattern image of the project corresponding to the substrate 111 is obtained (step S54)', and the electrode (or Saki) pattern of the image 25 201219775 containing the defect photographed in the imaging process and the sample® money image are included. The electrode (or wiring) pattern is compared (step S55). The pattern matching processing unit 157 determines the electrode (or wiring) pattern including the defect of the imaging processing and the electrode (or wiring) pattern of the sample pattern image. Whether or not (step S56), when the pattern matching processing unit 157 determines both of them (step S56 · · W, the output is the subject, that is, the pattern For the purpose of success (step S57), when it is judged that it is not (step (10): called, the output is not the subject of the pattern, that is, the subject of the pattern comparison failure (step S58), and the pattern comparison determination processing is ended. As described above, according to the second embodiment, even in the case where only the center of gravity of the defect as the defect information is acquired, the size of the defect is obtained by processing the image in which the defect is actually captured, and the defect D is made in the field of focus detection. In the state where S0 is retracted, the dragon detection processing is performed, so that the same effect as in the first embodiment can be exerted. Further, in the second embodiment, the image used for the pattern matching processing or the pattern matching determination processing is defective. The image in which the center of gravity is located in the field of view of the imaging unit (2) is exemplified as an example, but it is of course not limited to this. It is also possible to make an image of the center of the field of view of the outer quadrangle of the defect. Weeping and 'focus detection field' is not limited to one, but also with the function of focus detection 4123 and there are multiple. For example, in the case of the focus detection degree of the image contrast method, since the focus detection field is often set in plural, in this case, the evacuation condition acquisition unit 154 acquires the retreat distance and the backoff of the defect in which the external quadrilateral of the defect does not overlap with the focus-focus detection area. In the focus detection field, the focus detection unit 123 also functions as the focus detection unit 123, and is not limited to the outside of the field of view field in the field of view. This is because, for example, in the case of the focus detection unit 123 of the active mode such as laser, the focus detection field can be arbitrarily set without depending on the size of the field of view. If the focus detection field is outside the field of view, in order to obtain an image, if the center of gravity of the defect or the center of the external quadrilateral of the defect is located at the center of the field of view, the possibility that the external quadrilateral of the defect overlaps the focus detection field becomes small. In such a case, the number of times of retreating defects is reduced, and the efficiency of the joint work is increased. Further, when there are a plurality of defective adjacent connections, the control units 15A and 250 can form a quadrangular shape having a large outer quadrilateral in which the defect is combined, and the large quadrilateral can be used for the evacuation condition. For example, as shown in Fig. 14, when the defects 〇 1 and D2 are close to each other, it is sufficient to form a quadrangle R10 including the defect 〇1 and the quadrangle R11 and the defect D2 and the quadrangle R12. If the number of traps is too large, and the external quadrilateral of the defect is not in the field of focus detection, and therefore the retraction distance cannot be obtained, the external quadrilateral of each defect is combined into one large quadrangle, and the quadrilateral can be self-focusing detection field. It is only necessary to retreat the retreat condition, thereby avoiding the calculation of the retreat condition. Further, in the first and second embodiments, the outer quadrilateral of the defect does not overlap with the focus detection field during the focus detection processing, and the defect is retracted from the focus detection area by the minimum distance. However, the present invention is not limited to this. . In the case where the X-axis direction or the Y-axis direction width in the focus detection field is separated, the gantry control unit 156 separates the substrate from the width 27 201219775 to the field of view of the center of gravity of the defect of the self-correcting target on the gantry 110. Moving the width of the position of the center FsO of the field Fs allows the defect to exit the focus detection field. Further, when the substrate 111 is to be moved so that the center of gravity of the defect of the correction target is at the center FsO of the field of view Fs on the gantry 110, the framing control unit 156 obtains the defect information acquired from the defect information acquisition unit 151, and the image processing unit The defect size "determined when the defect is located in the focus detection field s" can also control the gantry moving portion 113, and the defect Y of the correction processing object is retracted to the field of view of the imaging portion 121 by the arrow Y4 of Fig. 5 Outside the field fc. As shown in Fig. 15, when the focus detection area A is located in the field of view Fc of the imaging unit 121, the defect d is retracted to the outside of the field of view FC, whereby the defect can be reliably retracted outside the field of focus detection. Further, in the first and second embodiments, the focus detection field may be located at the center of the field of view or may be a dot shape. Further, the evacuation condition acquisition unit 154 may set the retreat condition so that the external quadrilateral of the defect D and the focus detection area are separated by a predetermined distance. For example, in the case of the spot-focus detection in the center Fc of the line of sight Fc as shown in Fig. 16, the evacuation condition acquisition unit 154 sets the retreat condition so that the external quadrilateral R3 of the defect D3 of the defect correction target is located at the center FcO. The field of focus detection is retracted by a predetermined distance in the direction of the x-axis. This distance La is set in consideration of the offset of the calibration, the optical shift, the offset of the core of the objective lens, and the offset caused by the difference in instrumental analysis. The distance La can actually be set according to the result of the focus detection process performed by the external quadrangle R3 of the defect correction object D3 and the moment of the focus detection field of the center Fc〇 28 201219775. Therefore, it is possible to separate only the offset of the calibration, the shift of the optical, the offset of the core of the objective lens, and the offset caused by the difference of the instrument analysis, so that the defect is retracted from the focus detection field, thereby achieving more Correct focus detection processing. Furthermore, the distance between the external quadrilateral of the defect and the field of focus detection may also be set corresponding to the size of the quadrilateral of the defect and the size of the field of view. For example, in the defect 〇3 of Fig. 16, when the width Ldx3 in the parent axis direction of the circumscribed square is shorter than the 丨/2 length Lfx of the width in the fC2X axis direction of the field of view, the evacuation condition acquisition unit 154 obtains the defect D3. The quadrilateral R 3 is retracted from the focus detection field in the center F c 0 in the direction of the x-axis and is retracted by the distance La. On the other hand, in the defect 〇4 of FIG. 17, when the width Ldx4 of the circumscribed quadrangle R3 in the x-axis direction is longer than the 1/2 length Lfx of the width of the field of view in the axial direction, the defect 〇4 is obtained. The quadrilateral R4 is retracted from the focus detection field in the center F c χ in the x-axis direction by the distance Lb (>La). Further, at the time of evacuation, the evacuation condition is set such that the y coordinate of the center of gravity of the defects D3 and D4 is the same as the 7 coordinates of the center & Further, in the field of focus detection, the field of focus detection as shown in Fig. 18 may be long. In this case, the evacuation condition acquisition unit 154 can also set the distance between the external quadrilateral of the defect at the time of the retraction and the focus detection field by the size of the outer quadrilateral of the defect corresponding to the size of the field of view. For example, as shown by the defect D5 in FIG. 1S, the defect 〇5 has a width Ldy5 in the x-axis direction of the quadrangular shape Rs which is 1/2 of the width in the Fc-axis direction of the field of view FF. The short-time 'retraction condition acquisition unit 154 Seeking external four-corner position 5 self-focus detection 29 201219775 The retreat condition for the retreat of the field A2 in the y-axis direction by the distance Lc. On the other hand, as shown by the defect D6 of FIG. 19, when the width Ldy6 of the defect D6 in the y-axis direction of the quadrangular shape R6 is longer than the 1/2 length Lfy of the width of the y-axis direction of the field of view Fc, the external connection is obtained. The quadrilateral R6 is retracted from the focus detection field A2 by the distance Ld (> Lc) in the y-axis direction. Further, in the retreat, the evacuation condition is set such that the x coordinate of the center of gravity of the defects D5 and D6 is the same as the X coordinate of the center FcO. In this way, by retreating the defect from the focus detection field and separating the distance corresponding to the size of the quadrilateral corresponding to the defect in the predetermined direction, the back-off of the defect in the field of focus detection can be confirmed. Further, in the first and second embodiments, the case where the quadrangular shape indicates the field corresponding to the defect is described as an example. However, the present invention is not limited to this. As shown in FIG. 20, the defect D may be a perfect circle R7. Said. In this case, since the necessary defect is retracted from the focus detection field s 二次 in the second element, the retraction condition acquisition unit 154 obtains the retraction distance in each of the x-axis direction and the x-axis direction. Further, in the first and second embodiments, the gantry 11A may not be moved, and the defect correction device 1A of the 21st drawing may be provided with both the microscope unit 12 and the laser illuminating unit 130 and the substrate. The microscope movement in which the lu surface moves in parallel is changed to the position of the field of view of the imaging unit 121 on the substrate U1. In this case, the control unit (4) 156a controls the microscope moving unit 161 to retract (4) from the focus detection area when f is detected or not. X, as in the defect correction device of Fig. 22, both the setting frame D moving portion 113 and the microscope moving portion 161 change the field of view of the imaging unit 121 on the substrate ηη 30 30 201219775. In this case, the gantry control unit 156 and the microscope movement control unit 156a of the control unit 150b control the gantry moving unit 113 and the microscope moving unit 161, respectively, whereby the defect is retracted from the focus detection area during focus detection. Further, in the second embodiment, the defect correction devices 100, 10a, iOOb, and 200 are described as an example. However, the present invention is not limited thereto, and may be applied to the defect classification device 6. When the defect sorting device 6 is applied, the laser irradiation unit 130 is removed. Further, the configuration in which the laser irradiation unit 130 is removed from the defect correction devices 1A, i00a, 1B, and 2A can also be applied to the defect inspection device 1. As described above, the configuration in which the laser irradiation unit 130 is removed from the defect correction devices 100, 10a, 10b, and 2 is applicable to various devices having an image acquisition device that acquires an image of a substrate having defects. . In the first and second embodiments, the retreat condition acquisition unit 154 is described as an example in which the retreat condition is calculated by calculation. However, the present invention is not limited thereto, and the defect information stored in the memory unit 144 may be obtained in advance. Each content and the retreat condition corresponding to each content of the defect information refer to the condition table, and the cow table selects the most suitable retreat condition. [Picture * Simple] Fig. 1 is a block diagram showing a schematic configuration of a defect correction system having a defect correction device of the first embodiment. Fig. 2 is a block diagram showing the configuration of the defect correction device shown in the first drawing. Fig. 3A is a view for explaining the field of focus detection shown in Fig. 2. Field of view of the camera unit 31 201219775 Section 3B is used to illustrate the field of focus detection in the field of view of the stand shown in Figure 2. Fig. 4 is a flow chart showing the processing procedure of the pattern matching processing in the defect correction device shown in Fig. 2. Figure 5 is an example of a defect intelligence. Fig. 6A is a diagram for explaining the coordinate replacement of the evacuation condition acquisition unit shown in Fig. 2. Fig. 6B is a diagram for explaining the coordinate replacement of the retreat condition acquisition unit shown in Fig. 2 . Fig. 7A is a diagram for explaining the retreat condition acquisition processing by the retreat condition acquisition unit shown in Fig. 2 . Fig. 7B is a diagram for explaining the retreat condition acquisition processor performed by the retreat condition acquisition unit shown in Fig. 2 . Fig. 8 is a view showing a conventional defect image. Fig. 9 is a view showing a defect image of the defect correction device shown in Fig. 2. Fig. 10 is a block diagram showing a schematic configuration of a defect correcting device of the second embodiment. Fig. 11 is a flow chart showing the processing procedure of the pattern matching processing in the defect correcting device shown in Fig. 10. Fig. 12 is a view showing an image processor shown in Fig. 11. Fig. 13 is a flow chart showing the processing procedure of the pattern matching judging process shown in Fig. 11. Fig. 14 shows an example of a defect on a substrate. 8 32 201219775 The retreat condition is obtained by the processor. Ding Zhi I avoids the condition acquisition unit. Fig. 17 is a diagram for explaining the evacuation condition acquisition processor. The condition acquisition unit performs the eighteenth diagram for explaining the first and the retreat conditions for the financial institution. ^ The retreat of the τ is obtained by the acquisition unit. The 19th diagram is used to explain the retreat condition acquisition processor. & avoidance condition acquisition unit ==: The retreat condition acquisition processor of the retreat condition acquisition unit shown in Fig. 2 performs the other configuration of the other configuration of the defect correction cleavage of the embodiment type block diagram Fig. 22 is a block diagram showing the defect correction of the embodiment. [Main component symbol description 110: gantry 111...substrate 113... gantry moving unit 120...microscope unit 121...imaging unit 122...imaging lens 123...focus detecting unit 124, 126, 133, 138.··half mirror 1...deficiency Inspection device 2...Network 3...Production data management server 4. Defect information management server 5. Defect information database 6. Defect classification device 100, 100a, 100b, 200_.. Defect correction device 33 201219775 125... Illumination unit 127... Quasi-focus mechanism 128.. Rotator 129.. Opposite lens 130.. Laser irradiation unit

131.. laser light source 132 ... LED 134, 137... high reflection mirror 135.. space light modulator 136.. field setting unit 142.. input unit 143.. communication unit 144.. memory 145.. Output unit 146.. Display unit 150, 150a, 250, 150b... Control unit 151.. Defect information acquisition unit 152.. Focus detection area calculation unit 153.. Imaging control unit 154 .. . Retraction condition acquisition unit 155.. focus detection unit 156.. gantry control unit 156a... microscope movement control unit 157.. pattern alignment processing unit 161.. microscope movement unit 253.. Image processing unit 34 8

Claims (1)

201219775 VII. Patent application scope: 1. An image acquisition device for obtaining a partially enlarged image of a defective substrate, comprising: an imaging portion having a lens and an imaging element, and for amplifying the foregoing a portion of the substrate to be imaged; a position changing unit for changing a field of view of the imaging unit on the substrate; a focus detecting unit for focusing the substrate on the lens; and a position control unit for controlling the position When the focus detection unit performs focusing, the change unit includes the defect included in the image acquisition target area of the substrate from the focus detection area of the focus target-retractor; and the focus control unit fixes the focus detection And the imaging control unit causes the imaging unit to enlarge a part of the substrate to be imaged after the focus condition is fixed by the focus control unit. 2. The image acquisition device according to claim 1, wherein the position control unit fixes a specific point of the defect after the retraction to a field of view of the imaging unit after the focus condition is fixed by the focus control unit. In the predetermined position, the position control unit positions the specific point of the defect to a predetermined position in the field of view of the imaging unit, and then causes the imaging unit to capture a part of the substrate. 3. The image acquisition device of the invention of claim 4, wherein the image acquisition device further includes a defect information acquisition unit that acquires defect information on the substrate on the substrate having the specific defect, and the position control unit is provided by the defect information acquisition unit. The lack of it is reported to make the defects contained in the field of image acquisition of the substrate from the focus detection field. 5. 5. If the application for the third item of the special ship is acquired, the device has a back-off bar = The acquisition unit's acquisition condition acquisition unit acquires the retreat distance and the retraction direction of the defect included in the image acquisition target field of the substrate from the defect information as the retreat condition, and the position (four) is The retracting condition of the material is taken (4), and the image transfer object of the substrate is retracted from the focus detection field. In the image acquisition device of the fourth aspect of the patent scope, wherein the aforementioned retreat == is separated from the aforementioned _ field after the retreat. 6. The patent acquisition device of claim 3, wherein the defect information includes at least The coordinates of a specific point of the aforementioned defect. The image acquisition device of the sixth aspect of the patent garden, wherein the aforementioned defect) further includes size information indicating the size of the defect. 8. The image acquisition device of claim 7 of the patent patent, wherein the size of the information is external to the coordinates of the two adjacent corners of the defect, the seesaw 36 201219775 The evacuation condition acquisition unit obtains a direction perpendicular to the quadrangle of the square based on the coordinates of the specific point of the defect included in the defect information and the coordinate on the substrate on which the apexes of the quadrilateral of the defect are not adjacent. The retreat distance of the aforementioned defect. 9. The image acquisition device of claim 6, wherein the image processing unit's image processing unit processes the image including the defect detected by the front image portion to determine the size of the defect. The evacuation condition acquisition unit acquires the defect included in the image acquisition area of the substrate based on the coordinates of the specific point of the defect included in the defect information and the size of the defect obtained by the image processing unit. The retreat distance and the retraction direction in the above-described focus detection field. 10. The image obtaining device of claim 9, further comprising a pattern matching portion that performs a pattern included in an image including a defect photographed by the image capturing portion and is obtained in advance In the pattern processing of the obtained sample pattern, the image processing unit processes the image including the defect when the pattern included in the image including the defect in the pattern matching portion does not match the sample pattern. [11] The image acquisition device of claim 2, wherein the position control unit is configured to change a field of view of the imaging unit on the substrate to cause defects in an image acquisition field of the substrate. When the specific point is located at a predetermined position in the field of view of the imaging unit, if it is determined that the defect is located in the focus measurement area, the position changing unit causes the defect included in the image acquisition target area of the substrate from the aforementioned 37 201219775 Focusing in the field of focus measurement. 12. The image acquisition device according to claim 2, wherein the device control unit is configured to change a field of the imaging unit on the substrate to include an image in the field of obtaining the substrate When the specific point of the defect is located at a predetermined position in the field of view of the imaging unit, if the defect is located in the focus measurement field, the position changing unit causes the defect in the image acquisition field of the substrate. Retreat to the outside of the field of view of the aforementioned imaging unit. 13. The image acquisition device of claim 2, wherein the specific point of the defect is the center of gravity of the aforementioned defect. 14. If you apply for a patent scope! The image acquisition device of the item, wherein the former change portion is for moving the substrate. 15. The image acquisition device of claim </ RTI> wherein the front change unit is for moving the camera unit. 16. A defect correction device for irradiating a substrate with laser light to repair a defect of the substrate, comprising: an image acquisition device, wherein the image is obtained by a portion of the base # And the earth-returner defect correction unit irradiates the laser light onto the substrate to perform repair based on an image obtained by imaging by the image acquisition device. The image acquisition device includes: an imaging unit' having a lens And an imaging device for amplifying a part of the substrate to be imaged; 38 201219775 The position changing unit is for changing the field of view on the substrate; P is ''', detecting. The 卩' is a position on the substrate of the lens described above. [5. The control unit is configured to control the position change unit to cause the aforementioned defect included in the target area of the substrate to be acquired by the focus detection area; And the control unit is configured to fix the focus condition after the focusing by the focus detection unit; and the imaging control unit causes the imaging unit to enlarge the substrate to be imaged after the focus condition is fixed by the focus control unit By. 17. An image acquisition method for obtaining a partially enlarged image of a defective substrate by imaging by an imaging unit, comprising: a retreating step of changing a field of view of the imaging unit on the substrate In the field, the defect in the image acquisition target area of the substrate is retracted from the focus detection area to be the focus target; the focus detection step is performed by focusing the lens of the imaging unit on the substrate; and the focus fixing step is to fix the focus The detection step performs the focus condition after focusing; and the imaging step is to enlarge a part of the substrate and image by using the focus condition fixed in the focus fixing step. The method of obtaining an image according to the seventeenth aspect of the invention, further comprising a position changing step of performing the step of the focus fixing step and the image capturing step, and changing the image capturing unit on the substrate The field of view is such that a specific point of the aforementioned defect of the back-off is located at a predetermined position in the field of view of the image pickup unit. 19. The image obtaining method according to claim 17, wherein the defect information obtaining step further comprises a defect information obtaining step of acquiring defect information of a position on the substrate on which the defect is specified; In the step, the defect included in the image acquisition target area of the substrate is evacuated from the focus detection field based on the defect information acquired in the defect information acquisition step. 20. The image obtaining method according to claim 19, further comprising: a retreating condition obtaining step of obtaining the image capturing area included in the substrate based on the defect information before the step of retreating The defect is the retreat distance and the retraction direction in the focus detection field as the retreat condition, and the retreat step is based on the retreat condition obtained by the retreat condition acquisition step, and the defect included in the image acquisition area of the substrate is from the focus The detection field is backed off. 21. The image obtaining method according to claim 20, wherein the aforesaid avoidance condition includes a condition that the aforementioned defect is separated from the focus detection area by a predetermined distance after the backoff. 22. The method for obtaining an image according to claim 20, wherein the aforementioned information includes at least a coordinate of a specific point of the aforementioned defect. For example, a method for obtaining an image of the 22nd item of the full-time division, wherein the aforementioned missing report further includes size information indicating the size of the defect. The method for obtaining the image of the 23rd item of the patent of the π patent, wherein the dimension information is a coordinate on the substrate adjacent to the two apexes of the quadrilateral of the defect, and the retreat condition is obtained according to the defect information. The coordinates of the specific point of the defect and the coordinates of the substrate on which the apexes of the quadrilaterals of the aforementioned defect are not adjacent are obtained, and the retraction distance of the defect to the first-order direction perpendicular to the square shape is obtained. The image obtaining method of claim 22, further comprising: a defect image capturing step of capturing an image including the defect; and an image processing step of processing the image of the missing image The size of the defect is obtained by the image captured in the middle; the step of the retreating condition is reduced by the size of the defect of the defect information and the size of the defect 2 obtained by the preceding image processing step, and the foregoing The ® image of the substrate is obtained in the field _ containing defects from the back-off distance and the retracting direction in the above-mentioned focus detection field.曰26······················································································· Obtaining a pattern comparison of the sample; the image processing step is performed when the __Miscellaneous pattern contained in the image captured by the 41 201219775 lack of imaging step in the pattern matching step is not processed An image captured by a defective image. According to the image acquisition method of the 18th patent of the patent application, the method further includes the step of "the touch is difficult to change the field of view of the camera unit on the substrate to obtain the front wire plate. When the specific point of the defect included in the object two domain is located at a predetermined position in the field of view of the imaging unit, it is determined whether the defect is located in the focus detection field; and the step of retreating is determined in the determining step that the defect is located in the focus measurement field. At this time, the defects included in the image acquisition target of the substrate are evacuated from the focus measurement field. 28. The image obtaining method according to claim 18, further comprising a judging step of changing a field of view of the image capturing unit on the substrate to obtain an image of the substrate Determining whether the defect is located in the focus detection field when the specific point of the defect included in the image capturing unit is located in the foreground position of the image capturing unit; the backing step is determining that the defect is located in the focus measurement field in the determining step Then, the defects included in the image acquisition target jaw base of the substrate are retracted to the outside of the field of view of the imaging unit. 29. The image obtaining method of claim 1, wherein the specific point of the aforementioned defect is the center of gravity of the aforementioned defect. 8 42