TW201236188A - The method of manufacturing crystalline silicon solar cell for avoiding undesirable metal deposition - Google Patents

The method of manufacturing crystalline silicon solar cell for avoiding undesirable metal deposition Download PDF

Info

Publication number: TW201236188A
Authority: TW; Taiwan
Prior art keywords: layer; emitter; substrate; nitride layer; solar cell
Prior art date: 2011-02-03

Application number

TW101103238A

Other languages

English (en)

Chinese (zh)

Inventor

Werner Saule

Original Assignee

Rena Gmbh

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2011-02-03

Filing date

2012-02-01

Publication date

2012-09-01

2012-02-01 Application filed by Rena Gmbh filed Critical Rena Gmbh

2012-09-01 Publication of TW201236188A publication Critical patent/TW201236188A/zh

Links

238000004519 manufacturing process Methods 0.000 title claims abstract description 5
229910021419 crystalline silicon Inorganic materials 0.000 title abstract 2
238000001465 metallisation Methods 0.000 title description 4
239000000758 substrate Substances 0.000 claims abstract description 48
239000002019 doping agent Substances 0.000 claims abstract description 13
229910052751 metal Inorganic materials 0.000 claims abstract description 12
239000002184 metal Substances 0.000 claims abstract description 12
230000008021 deposition Effects 0.000 claims abstract description 10
238000007747 plating Methods 0.000 claims abstract description 9
238000000034 method Methods 0.000 claims description 30
MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 20
229910052732 germanium Inorganic materials 0.000 claims description 14
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 14
238000000151 deposition Methods 0.000 claims description 10
238000009792 diffusion process Methods 0.000 claims description 9
238000000608 laser ablation Methods 0.000 claims description 9
239000000126 substance Substances 0.000 claims description 9
230000003647 oxidation Effects 0.000 claims description 8
238000007254 oxidation reaction Methods 0.000 claims description 8
238000009713 electroplating Methods 0.000 claims description 7
229910000420 cerium oxide Inorganic materials 0.000 claims description 4
238000002309 gasification Methods 0.000 claims description 4
BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 4
229910052715 tantalum Inorganic materials 0.000 claims description 4
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
230000005855 radiation Effects 0.000 claims description 3
UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 1
238000005121 nitriding Methods 0.000 claims 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 6
229910052710 silicon Inorganic materials 0.000 abstract 6
239000010703 silicon Substances 0.000 abstract 6
229910052581 Si3N4 Inorganic materials 0.000 abstract 4
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 4
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
229910052814 silicon oxide Inorganic materials 0.000 abstract 1
WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 8
229910052707 ruthenium Inorganic materials 0.000 description 6
CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 5
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
239000001257 hydrogen Substances 0.000 description 4
229910052739 hydrogen Inorganic materials 0.000 description 4
239000002904 solvent Substances 0.000 description 4
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
239000011248 coating agent Substances 0.000 description 3
238000000576 coating method Methods 0.000 description 3
238000007772 electroless plating Methods 0.000 description 3
229910017604 nitric acid Inorganic materials 0.000 description 3
229910052709 silver Inorganic materials 0.000 description 3
239000004332 silver Substances 0.000 description 3
MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
238000003486 chemical etching Methods 0.000 description 2
239000008367 deionised water Substances 0.000 description 2
229910021641 deionized water Inorganic materials 0.000 description 2
239000007789 gas Substances 0.000 description 2
229910052759 nickel Inorganic materials 0.000 description 2
239000012071 phase Substances 0.000 description 2
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
239000002253 acid Substances 0.000 description 1
ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
239000012298 atmosphere Substances 0.000 description 1
230000009286 beneficial effect Effects 0.000 description 1
CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
238000005234 chemical deposition Methods 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
229910052802 copper Inorganic materials 0.000 description 1
239000010949 copper Substances 0.000 description 1
239000013078 crystal Substances 0.000 description 1
230000007547 defect Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
230000005670 electromagnetic radiation Effects 0.000 description 1
238000005530 etching Methods 0.000 description 1
230000005284 excitation Effects 0.000 description 1
229910000449 hafnium oxide Inorganic materials 0.000 description 1
WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
239000012535 impurity Substances 0.000 description 1
239000000463 material Substances 0.000 description 1
229910001092 metal group alloy Inorganic materials 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
150000004767 nitrides Chemical class 0.000 description 1
239000007800 oxidant agent Substances 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
238000004549 pulsed laser deposition Methods 0.000 description 1
-1 ruthenium nitride Chemical class 0.000 description 1
238000007650 screen-printing Methods 0.000 description 1
239000012808 vapor phase Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells

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Photovoltaic Devices (AREA)

TW101103238A 2011-02-03 2012-02-01 The method of manufacturing crystalline silicon solar cell for avoiding undesirable metal deposition TW201236188A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE102011010306A DE102011010306A1 (de)	2011-02-03	2011-02-03	Verfahren zur Herstellung einer kristallinen Siliziumsolarzelle unter Vermeidung unerwünschter Metallabscheidungen

Publications (1)

Publication Number	Publication Date
TW201236188A true TW201236188A (en)	2012-09-01

Family

ID=46168013

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW101103238A TW201236188A (en)	2011-02-03	2012-02-01	The method of manufacturing crystalline silicon solar cell for avoiding undesirable metal deposition

Country Status (3)

Country	Link
DE (1)	DE102011010306A1 (fr)
TW (1)	TW201236188A (fr)
WO (1)	WO2012103888A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWI621276B (zh) *	2016-11-29	2018-04-11	茂迪股份有限公司	太陽能電池及其製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5011565A (en) *	1989-12-06	1991-04-30	Mobil Solar Energy Corporation	Dotted contact solar cell and method of making same
DE4217428A1 (de) *	1991-12-09	1993-06-17	Deutsche Aerospace	Hochleistungs-solarzellenstruktur
AUPP437598A0 (en) *	1998-06-29	1998-07-23	Unisearch Limited	A self aligning method for forming a selective emitter and metallization in a solar cell
NL2000248C2 (nl)	2006-09-25	2008-03-26	Ecn Energieonderzoek Ct Nederl	Werkwijze voor het vervaardigen van kristallijn-silicium zonnecellen met een verbeterde oppervlaktepassivering.
JP5216633B2 (ja) *	2008-03-19	2013-06-19	ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー．	バックグラウンドめっきを抑制する方法
DE102008028578A1 (de) *	2008-06-16	2010-03-04	Institut Für Solarenergieforschung Gmbh	Siliziumsolarzelle mit passivierter p-Typ-Oberfläche und Verfahren zur Herstellung derselben
EP2157209B1 (fr) *	2008-07-31	2014-10-22	Rohm and Haas Electronic Materials LLC	Inhibition de placage d'arrière plan
DE102008063558A1 (de) *	2008-12-08	2010-06-10	Gebr. Schmid Gmbh & Co.	Verfahren zur Bearbeitung der Oberfläche eines Wafers zur Herstellung einer Solarzelle und Wafer
US20100186808A1 (en) *	2009-01-27	2010-07-29	Peter Borden	Plating through tunnel dielectrics for solar cell contact formation
WO2010151478A1 (fr) *	2009-06-22	2010-12-29	International Business Machines Corporation	Procédé de fabrication d'une structure de détecteur optique à semi-conducteur
CN104952975A (zh) *	2009-10-26	2015-09-30	新南创新私人有限公司	用于硅太阳能电池的改善的金属化方法

2011
- 2011-02-03 DE DE102011010306A patent/DE102011010306A1/de not_active Withdrawn
2012
- 2012-02-01 TW TW101103238A patent/TW201236188A/zh unknown
- 2012-02-03 WO PCT/DE2012/100024 patent/WO2012103888A1/fr not_active Ceased

Also Published As

Publication number	Publication date
DE102011010306A1 (de)	2012-08-09
WO2012103888A1 (fr)	2012-08-09

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