WO2012103888A1 - Procédé de production d'une cellule photovoltaïque en silicium cristalline empêchant tout dépôt de métaux indésirables - Google Patents

Procédé de production d'une cellule photovoltaïque en silicium cristalline empêchant tout dépôt de métaux indésirables Download PDF

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Publication number
WO2012103888A1
WO2012103888A1 PCT/DE2012/100024 DE2012100024W WO2012103888A1 WO 2012103888 A1 WO2012103888 A1 WO 2012103888A1 DE 2012100024 W DE2012100024 W DE 2012100024W WO 2012103888 A1 WO2012103888 A1 WO 2012103888A1
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WO
WIPO (PCT)
Prior art keywords
silicon
emitter
silicon substrate
openings
nitride layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2012/100024
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German (de)
English (en)
Inventor
Werner Saule
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Rena GmbH
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Rena GmbH
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Application filed by Rena GmbH filed Critical Rena GmbH
Publication of WO2012103888A1 publication Critical patent/WO2012103888A1/fr
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the invention relates to a process for preparing a crystalline silicon solar cell according to the preamble of claim 1. and a made by this method Solarzel ⁇ le.
  • the object of the present invention is to provide a method of the generic type with which the formation of ghosts - deposits can be avoided without reducing the efficiency of the finished solar cell.
  • the invention is based on the object to provide such a ⁇ larzelle formed by plating with contacts without ghost deposits are available.
  • the inventive method provides for the ren guideddiffundie-forming an emitter on a first side of a silicon ⁇ substrate dopant into the silicon substrate for the purpose from ⁇ , subsequently deposit a silicon nitride layer at least on the first side of the silicon substrate, then locally on the first side of the silicon substrate Introduce openings in the silicon nitride layer and then form in the openings by means of plating metal contacts.
  • the emitter on the first side of the silicon substrate is partially etched back.
  • a silicon oxide layer ⁇ is formed with a thickness in the range of 1.0 nm to 10 nm on the first side of the silicon substrate.
  • the formation of the emitter described is not notwendi ⁇ g considered limited to the first side of the silicon substrate, but may also take place on other sites of the silicon substrate.
  • the deposition of the silicon nitride layer, the formation of the silicon oxide ⁇ layer as well as the etching back of the emitter are also not necessarily limited to the first side of the silicon substrate.
  • plating in the present sense is a Elektroplattie- ren, which is sometimes also referred to as electro-deposition or electroplating, or means a electroless plating, which is sometimes referred to as chemical Me ⁇ tallabscheidung or electroless plating.
  • a metal contact in the present sense is a contact formed from one or more metals or one or more metal alloys.
  • the openings are preferably introduced into the silicon nitride layer by means of laser ablation.
  • ei ⁇ ne hydrogen-containing silicon nitride layer is deposited on the first side of the silicon substrate.
  • hydrogen can be diffused from the silicon nitride layer to passivate defects into the silicon substrate. This is particularly advantageous when using multicrystalline silicon substrates. Due to the small thickness of the silicon oxide layer formed prior to the deposition of the silicon nitride layer, the diffusion of hydrogen from the silicon nitride layer into the silicon substrate is not hindered to a relevant extent by the silicon oxide layer.
  • the metal contacts are formed in the openings by electroplating.
  • the invention has a particularly advantageous effect, since ghost deposits occur to a greater extent in electroplating than in electroless plating. It has proven to be advantageous to zer etch back the emitter zen. Preferably, it is etched back in an etching solution comprising hydrofluoric acid and nitric acid or hydrofluoric acid and ozone. In an advantageous embodiment variant of the method, the etch-back of the emitter increases its layer resistance value by 10 ⁇ / sq to 50 ⁇ / sq.
  • the silicon oxide layer is preferably formed by means of a wet-chemical oxidation. This can be done, for example, in a solution comprising ozone, hydrogen peroxide or nitric acid. Particularly preferably, the silicon oxide ⁇ layer is formed in an oxidation solution of deionized water and dissolved ozone therein.
  • the silicon oxide layer can be formed by means of a gas phase oxidation. Preferably, this takes place in an ozone-containing gas atmospheres ⁇ sphere.
  • this is energetically excited, for example by irradiation of electromagnetic radiation, preferably of ultraviolet light.
  • the silicon oxide layer in a thickness in the range of 2 nm to 3 nm.
  • the silicon oxide layer is locally removed ⁇ ent. Again, this can be effected by means Laserabiation and particularly preferably in the same Laserabiations intimid in which the openings are ⁇ into the silicon nitride layer.
  • the openings are introduced into the silicon nitride layer by means of laser ablation and, in this case, emitter regions which are doped more heavily by laser diffusion are formed in regions of the openings.
  • emitter regions which are doped more heavily by laser diffusion are formed in regions of the openings.
  • a La ⁇ serdiffusion is understood to mean that the silicon substrate by means of laser radiation which is already irradiated for Laserabiation, is locally heated so that it comes to a rearrangement of the dopant into the areas of the openings, an emitter profile is thus changed locally. Under such a rearrangement of dopant also falls the activation of electrically inactive dopant.
  • By means of such a laser diffusion locally stronger doped emitter regions and thus a so-called selective emitter can be formed in regions of the openings.
  • laser-induced chemical processes sometimes referred to as laser chemical processing
  • a laser-induced chemical etching which is sometimes referred to as laser chemical etching
  • the laser ablation can also be realized by means of laser beam evaporation, which, like the laser-induced chemical processes, enables laser diffusion for the purpose of forming a selective emitter. If a selective emitter is formed in the manner described, a stronger diffusion can be used to form the emitter on the first side of the silicon substrate.
  • Figure 1 is a schematic representation of a first embodiment ⁇ example of the method according to the invention
  • Figure 2 is a schematic representation of a second embodiment ⁇ example of the method according to the invention
  • Figure 1 shows an embodiment of the invention
  • dopant is diffused into a Sili ⁇ ziumsubstrat 50 and 10 formed an emitter 52 in this manner.
  • the dopant is merely diffused into the upper side of the solar cell substrate 50. This can be done in a manner known per se, for example by diffusion of dopant from a top surface of the silicon substrate 50. th, dopant-containing solution.
  • the dopant used is matched to the volume doping of the silicon substrate 50. In principle, both an n-doped and a p-doped emitter can be formed.
  • the emitter 52 is partially etched back. In the present exemplary embodiment, this is carried out wet-chemically in a solution containing hydrofluoric acid and nitric acid.
  • the silicon substrate 50 is dipped for the purpose of forming ⁇ From 14 of a silicon oxide layer 54 in deionized What ⁇ ser, in which ozone is dissolved. In this way, a wet-chemical oxidation of the entire surface of the silicon substrate 50 takes place.
  • a hydrogen-containing silicon nitride layer is deposited 16. This is usually done by means of a chemical vapor deposition (CVD) deposition.
  • CVD chemical vapor deposition
  • the downwardly facing rear side of the silicon substrate 50 in the representation of FIG. 1 is kept free of the silicon nitride layer 56. This can be done for example, by the silicon substrates in pairs placed back to back in a used coating system or by the back print ⁇ te is placed on a boat to the plant, which is inserted into the ver ⁇ applied coating system.
  • local openings 58 are introduced into the silicon nitride layer 56 on the first side of the silicon substrate 50, in the present exemplary embodiment thus on the upper side of the silicon substrate 50. This takes place in the illustrated exemplary embodiment by means of laser ablation.
  • the silicon oxide layer 54 is also locally removed in the openings 58.
  • front side contacts 60 are formed in the openings 58 by means of electroplates 20.
  • metal contacts which have, for example, nickel, and silver or nickel, copper and silver.
  • the rear side contact 62 is additionally formed on the rear side of the silicon substrate 50. This therefore consists of the same material as the front ⁇ side contacts 60th
  • FIG. 1 In addition to the last method step of electroplating 20, the lowermost partial illustration in FIG. 1 also illustrates an exemplary embodiment of the solar cell according to the invention.
  • the embodiment of Figure 2 differs from that of Figure 1 in that the local introduction 28 of openings 58 in the silicon nitride layer 56 and a laser diffusion takes place 28.
  • regions of the openings 58 more heavily doped emitter regions 64 are formed, which together with the remaining areas of the emitter 52 form a selective emitter.
  • the laser ablation, and in conjunction with the laser diffusion can be realized by means of laser-induced chemical etching. Instead of a laserinduzier ⁇ th chemical etching can find reindeer using a Laserstrahlverdampfungsverfah-.

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  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un procédé de production d'une cellule photovoltaïque en silicium cristalline. Pour former un émetteur (52) sur une première face d'un substrat de silicium (50), un dope est diffusé (10) à l'intérieur du substrat en silicium (50); ensuite une couche de nitrure de silicium (56) est déposée (16) sur la première face du substrat de silicium (50); des orifices (58) sont localement pratiqués dans la couche de nitrure de silicium (56) sur la première face du substrat de silicium (50); et des contacts métalliques (60) sont réalisés (20) dans les orifices (58) par une métallisation (20). Avant le dépôt (16) de la couche de nitrure de silicium (56) des émetteurs (52) sur la première face du substrat de silicium (50), un amincissement par attaque chimique (12) est partiellement effectué. Puis, avant le dépôt (16) de la couche de nitrure de silicium (56) sur la première face du substrat de silicium (50), une couche d'oxyde de silicium (54) d'une épaisseur de l'ordre de 1,0 nm à 10 nm est déposée (14).
PCT/DE2012/100024 2011-02-03 2012-02-03 Procédé de production d'une cellule photovoltaïque en silicium cristalline empêchant tout dépôt de métaux indésirables Ceased WO2012103888A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011010306.6 2011-02-03
DE102011010306A DE102011010306A1 (de) 2011-02-03 2011-02-03 Verfahren zur Herstellung einer kristallinen Siliziumsolarzelle unter Vermeidung unerwünschter Metallabscheidungen

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WO2012103888A1 true WO2012103888A1 (fr) 2012-08-09

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Country Status (3)

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DE (1) DE102011010306A1 (fr)
TW (1) TW201236188A (fr)
WO (1) WO2012103888A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108123010A (zh) * 2016-11-29 2018-06-05 茂迪股份有限公司 太阳能电池及其制造方法

Citations (10)

* Cited by examiner, † Cited by third party
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US5011565A (en) * 1989-12-06 1991-04-30 Mobil Solar Energy Corporation Dotted contact solar cell and method of making same
WO2000001019A1 (fr) * 1998-06-29 2000-01-06 Unisearch Limited Procede de presentation automatique pour la realisation d'un emetteur selectif et de la metallisation dans une cellule solaire
WO2008039067A2 (fr) 2006-09-25 2008-04-03 Ecn Energieonderzoek Centrum Nederland Procédés de fabrication de photopiles solaires au silicium cristallin à passivation superficielle améliorée
EP2103716A1 (fr) * 2008-03-19 2009-09-23 Rohm and Haas Electronic Materials LLC Procédé d'inhibition de placage d'arrière-plan
WO2010003784A2 (fr) * 2008-06-16 2010-01-14 Institut Für Solarenergieforschung Gmbh Cellule solaire au silicium à surface de type p passivée et son procédé de fabrication
EP2157209A2 (fr) * 2008-07-31 2010-02-24 Rohm and Haas Electronic Materials LLC Inhibition de placage d'arrière plan
DE102008063558A1 (de) * 2008-12-08 2010-06-10 Gebr. Schmid Gmbh & Co. Verfahren zur Bearbeitung der Oberfläche eines Wafers zur Herstellung einer Solarzelle und Wafer
US20100186808A1 (en) * 2009-01-27 2010-07-29 Peter Borden Plating through tunnel dielectrics for solar cell contact formation
WO2010151478A1 (fr) * 2009-06-22 2010-12-29 International Business Machines Corporation Procédé de fabrication d'une structure de détecteur optique à semi-conducteur
WO2011050399A1 (fr) * 2009-10-26 2011-05-05 Newsouth Innovations Pty Limited Procédé de métallisation perfectionné pour photopiles au silicium

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DE4217428A1 (de) * 1991-12-09 1993-06-17 Deutsche Aerospace Hochleistungs-solarzellenstruktur

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5011565A (en) * 1989-12-06 1991-04-30 Mobil Solar Energy Corporation Dotted contact solar cell and method of making same
WO2000001019A1 (fr) * 1998-06-29 2000-01-06 Unisearch Limited Procede de presentation automatique pour la realisation d'un emetteur selectif et de la metallisation dans une cellule solaire
WO2008039067A2 (fr) 2006-09-25 2008-04-03 Ecn Energieonderzoek Centrum Nederland Procédés de fabrication de photopiles solaires au silicium cristallin à passivation superficielle améliorée
EP2103716A1 (fr) * 2008-03-19 2009-09-23 Rohm and Haas Electronic Materials LLC Procédé d'inhibition de placage d'arrière-plan
WO2010003784A2 (fr) * 2008-06-16 2010-01-14 Institut Für Solarenergieforschung Gmbh Cellule solaire au silicium à surface de type p passivée et son procédé de fabrication
EP2157209A2 (fr) * 2008-07-31 2010-02-24 Rohm and Haas Electronic Materials LLC Inhibition de placage d'arrière plan
DE102008063558A1 (de) * 2008-12-08 2010-06-10 Gebr. Schmid Gmbh & Co. Verfahren zur Bearbeitung der Oberfläche eines Wafers zur Herstellung einer Solarzelle und Wafer
US20100186808A1 (en) * 2009-01-27 2010-07-29 Peter Borden Plating through tunnel dielectrics for solar cell contact formation
WO2010151478A1 (fr) * 2009-06-22 2010-12-29 International Business Machines Corporation Procédé de fabrication d'une structure de détecteur optique à semi-conducteur
WO2011050399A1 (fr) * 2009-10-26 2011-05-05 Newsouth Innovations Pty Limited Procédé de métallisation perfectionné pour photopiles au silicium

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108123010A (zh) * 2016-11-29 2018-06-05 茂迪股份有限公司 太阳能电池及其制造方法

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TW201236188A (en) 2012-09-01

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