TW201247937A - Process for producing silicon - Google Patents

Process for producing silicon Download PDF

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Publication number
TW201247937A
TW201247937A TW101110733A TW101110733A TW201247937A TW 201247937 A TW201247937 A TW 201247937A TW 101110733 A TW101110733 A TW 101110733A TW 101110733 A TW101110733 A TW 101110733A TW 201247937 A TW201247937 A TW 201247937A
Authority
TW
Taiwan
Prior art keywords
cathode
cerium oxide
dioxide
electrolytic reduction
reduction
Prior art date
Application number
TW101110733A
Other languages
English (en)
Chinese (zh)
Inventor
Ioshiyuki Nohira
Rika Hagiwara
Katsutoshi Kobayashi
Kouji Yasuda
Ietsuya Ioba
Kazuo Yamada
Kouki Ichiisubo
Kenta Masuda
Original Assignee
Univ Kyoto
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Kyoto filed Critical Univ Kyoto
Publication of TW201247937A publication Critical patent/TW201247937A/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/021Preparation
    • C01B33/023Preparation by reduction of silica or free silica-containing material
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25BELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00Electrolytic production of inorganic compounds or non-metals
    • C25B1/01Products
    • C25B1/33Silicon
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/70Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
  • Silicon Compounds (AREA)
  • Electrolytic Production Of Metals (AREA)
TW101110733A 2011-05-30 2012-03-28 Process for producing silicon TW201247937A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011120042 2011-05-30

Publications (1)

Publication Number Publication Date
TW201247937A true TW201247937A (en) 2012-12-01

Family

ID=47258883

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101110733A TW201247937A (en) 2011-05-30 2012-03-28 Process for producing silicon

Country Status (3)

Country Link
JP (1) JP6025140B2 (fr)
TW (1) TW201247937A (fr)
WO (1) WO2012165017A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104419944A (zh) * 2013-08-19 2015-03-18 韩国原子力研究院 电化学制备硅膜的方法
WO2022118326A1 (fr) * 2020-12-06 2022-06-09 Helios Project Ltd Procédé de préparation de silicium

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014111781B4 (de) * 2013-08-19 2022-08-11 Korea Atomic Energy Research Institute Verfahren zur elektrochemischen Herstellung einer Silizium-Schicht
JP6559538B2 (ja) * 2015-10-26 2019-08-14 株式会社東芝 ガラス固化体の溶解方法及びその溶解装置
WO2017073330A1 (fr) * 2015-10-27 2017-05-04 新日鐵住金株式会社 Procédé de production de plaque métallique revêtue de silicium
CN106591891B (zh) * 2016-12-09 2018-10-09 武汉大学 一种将致密材料制备成纳米多孔材料的方法
KR102208279B1 (ko) * 2019-05-22 2021-01-27 충북대학교 산학협력단 리튬이차전지 음극소재용 다공성 실리콘의 제조방법
CN110459769B (zh) 2019-07-17 2021-06-04 武汉大学 一种高分散的硅碳固溶胶、其制备方法及应用
RU2717780C1 (ru) * 2019-10-22 2020-03-25 Федеральное государственное бюджетное учреждение науки Институт химии твердого тела Уральского отделения Российской академии наук Способ получения волокнистого кремния

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9812169D0 (en) * 1998-06-05 1998-08-05 Univ Cambridge Tech Purification method
JP4513297B2 (ja) * 2003-09-30 2010-07-28 日本軽金属株式会社 金属酸化物の還元方法及び金属酸化物の還元装置
JP4765066B2 (ja) * 2005-05-19 2011-09-07 国立大学法人京都大学 シリコンの製造方法
BRPI0708603B1 (pt) * 2006-03-10 2016-05-17 Elkem As método para produzir e refinar um metal em um método eletrolítico
JP2011098861A (ja) * 2009-11-06 2011-05-19 Toshiba Corp 太陽電池用シリコンの製造方法及び製造装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104419944A (zh) * 2013-08-19 2015-03-18 韩国原子力研究院 电化学制备硅膜的方法
CN104419944B (zh) * 2013-08-19 2017-06-16 韩国原子力研究院 电化学制备硅膜的方法
WO2022118326A1 (fr) * 2020-12-06 2022-06-09 Helios Project Ltd Procédé de préparation de silicium

Also Published As

Publication number Publication date
JP6025140B2 (ja) 2016-11-16
WO2012165017A1 (fr) 2012-12-06
JP2013011012A (ja) 2013-01-17

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