TW201446655A - 製備γ－ＣｓＳｎＩ３的方法及γ－ＣｓＳｎＩ３、Ｃｓ１－ｘＡｘＢ１－ｙＣｙＩ３－ｚＸｚ、ＢｉＩ３或Ｂｉ１－ｘＭＩ３－ｙＸｙ於薄膜電晶體的用途 - Google Patents

製備γ－ＣｓＳｎＩ３的方法及γ－ＣｓＳｎＩ３、Ｃｓ１－ｘＡｘＢ１－ｙＣｙＩ３－ｚＸｚ、ＢｉＩ３或Ｂｉ１－ｘＭＩ３－ｙＸｙ於薄膜電晶體的用途 Download PDF

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Publication number
TW201446655A
TW201446655A TW103110801A TW103110801A TW201446655A TW 201446655 A TW201446655 A TW 201446655A TW 103110801 A TW103110801 A TW 103110801A TW 103110801 A TW103110801 A TW 103110801A TW 201446655 A TW201446655 A TW 201446655A
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TW
Taiwan
Prior art keywords
cssni
solution
layer
solvent
cssni3
Prior art date
Application number
TW103110801A
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English (en)
Chinese (zh)
Inventor
菲力克斯 艾可邁爾
威爾芙烈德 艾瑪斯
丹尼爾 瓦德曼
法比昂 席勒
丹尼爾 卡爾布蘭
Original Assignee
巴斯夫歐洲公司
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Filing date
Publication date
Application filed by 巴斯夫歐洲公司 filed Critical 巴斯夫歐洲公司
Publication of TW201446655A publication Critical patent/TW201446655A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00—Compounds of tin
    • C01G19/006—Compounds containing tin, with or without oxygen or hydrogen, and containing two or more other elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/32—Thermal properties
    • C01P2006/33—Phase transition temperatures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
TW103110801A 2013-03-25 2014-03-24 製備γ－ＣｓＳｎＩ３的方法及γ－ＣｓＳｎＩ３、Ｃｓ１－ｘＡｘＢ１－ｙＣｙＩ３－ｚＸｚ、ＢｉＩ３或Ｂｉ１－ｘＭＩ３－ｙＸｙ於薄膜電晶體的用途 TW201446655A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP13160850 2013-03-25

Publications (1)

Publication Number Publication Date
TW201446655A true TW201446655A (zh) 2014-12-16

Family

ID=48045271

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103110801A TW201446655A (zh) 2013-03-25 2014-03-24 製備γ－ＣｓＳｎＩ３的方法及γ－ＣｓＳｎＩ３、Ｃｓ１－ｘＡｘＢ１－ｙＣｙＩ３－ｚＸｚ、ＢｉＩ３或Ｂｉ１－ｘＭＩ３－ｙＸｙ於薄膜電晶體的用途

Country Status (2)

Country Link
TW (1) TW201446655A (fr)
WO (1) WO2014154521A2 (fr)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8679587B2 (en) * 2005-11-29 2014-03-25 State of Oregon acting by and through the State Board of Higher Education action on Behalf of Oregon State University Solution deposition of inorganic materials and electronic devices made comprising the inorganic materials
US9196482B2 (en) * 2011-06-01 2015-11-24 Kai Shum Solution-based synthesis of CsSnI3

Also Published As

Publication number Publication date
WO2014154521A3 (fr) 2015-02-19
WO2014154521A2 (fr) 2014-10-02

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