TW201535761A - 異質接面太陽能電池及其製造方法 - Google Patents

異質接面太陽能電池及其製造方法 Download PDF

Info

Publication number: TW201535761A
Authority: TW; Taiwan
Prior art keywords: layer; amorphous germanium; doped layer; deposited; boron
Prior art date: 2014-03-14

Application number

TW104108169A

Other languages

English (en)

Chinese (zh)

Inventor

Hideki Matsumura

Keisuke Ohdaira

Original Assignee

Japan Adv Inst Science & Tech

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2014-03-14

Filing date

2015-03-13

Publication date

2015-09-16

2015-03-13 Application filed by Japan Adv Inst Science & Tech filed Critical Japan Adv Inst Science & Tech

2015-09-16 Publication of TW201535761A publication Critical patent/TW201535761A/zh

Links

238000004519 manufacturing process Methods 0.000 title claims description 29
239000010410 layer Substances 0.000 claims abstract description 333
229910052732 germanium Inorganic materials 0.000 claims abstract description 238
239000000758 substrate Substances 0.000 claims abstract description 142
229910052698 phosphorus Inorganic materials 0.000 claims abstract description 84
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 76
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 69
239000011574 phosphorus Substances 0.000 claims abstract description 66
229910052796 boron Inorganic materials 0.000 claims abstract description 64
239000002344 surface layer Substances 0.000 claims abstract description 35
238000004050 hot filament vapor deposition Methods 0.000 claims abstract description 30
230000005012 migration Effects 0.000 claims abstract description 18
238000013508 migration Methods 0.000 claims abstract description 18
238000000034 method Methods 0.000 claims description 73
239000013078 crystal Substances 0.000 claims description 47
MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 39
125000004437 phosphorous atom Chemical group 0.000 claims description 30
XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 24
239000011148 porous material Substances 0.000 claims description 24
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 20
229910052707 ruthenium Inorganic materials 0.000 claims description 20
239000003054 catalyst Substances 0.000 claims description 15
229910000073 phosphorus hydride Inorganic materials 0.000 claims description 12
229910052751 metal Inorganic materials 0.000 claims description 11
239000002184 metal Substances 0.000 claims description 11
BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 6
239000000463 material Substances 0.000 claims description 6
150000004767 nitrides Chemical class 0.000 claims description 3
238000005229 chemical vapour deposition Methods 0.000 claims description 2
VGRFVJMYCCLWPQ-UHFFFAOYSA-N germanium Chemical compound [Ge].[Ge] VGRFVJMYCCLWPQ-UHFFFAOYSA-N 0.000 claims 64
239000010408 film Substances 0.000 claims 38
239000000126 substance Substances 0.000 claims 1
239000010409 thin film Substances 0.000 claims 1
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 178
230000006798 recombination Effects 0.000 abstract description 14
238000005215 recombination Methods 0.000 abstract description 14
238000006243 chemical reaction Methods 0.000 abstract description 13
230000005540 biological transmission Effects 0.000 abstract description 10
239000000969 carrier Substances 0.000 abstract description 2
210000004027 cell Anatomy 0.000 description 86
239000007789 gas Substances 0.000 description 21
239000012535 impurity Substances 0.000 description 15
238000000151 deposition Methods 0.000 description 14
230000000694 effects Effects 0.000 description 12
238000010586 diagram Methods 0.000 description 10
238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
230000007547 defect Effects 0.000 description 8
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
238000000354 decomposition reaction Methods 0.000 description 7
238000009792 diffusion process Methods 0.000 description 7
238000001000 micrograph Methods 0.000 description 7
238000011160 research Methods 0.000 description 7
229910052709 silver Inorganic materials 0.000 description 7
239000004332 silver Substances 0.000 description 7
238000005452 bending Methods 0.000 description 6
239000007788 liquid Substances 0.000 description 6
229910052715 tantalum Inorganic materials 0.000 description 6
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
230000008859 change Effects 0.000 description 5
238000000576 coating method Methods 0.000 description 5
238000009826 distribution Methods 0.000 description 5
230000001965 increasing effect Effects 0.000 description 5
230000008569 process Effects 0.000 description 5
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
229910052760 oxygen Inorganic materials 0.000 description 4
239000001301 oxygen Substances 0.000 description 4
230000000737 periodic effect Effects 0.000 description 4
238000012545 processing Methods 0.000 description 4
230000035484 reaction time Effects 0.000 description 4
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
229910021417 amorphous silicon Inorganic materials 0.000 description 3
230000015572 biosynthetic process Effects 0.000 description 3
238000007796 conventional method Methods 0.000 description 3
238000002474 experimental method Methods 0.000 description 3
239000002994 raw material Substances 0.000 description 3
230000007704 transition Effects 0.000 description 3
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
229910052799 carbon Inorganic materials 0.000 description 2
239000011248 coating agent Substances 0.000 description 2
238000010276 construction Methods 0.000 description 2
230000008021 deposition Effects 0.000 description 2
230000006866 deterioration Effects 0.000 description 2
238000005530 etching Methods 0.000 description 2
239000010419 fine particle Substances 0.000 description 2
150000002431 hydrogen Chemical class 0.000 description 2
239000001257 hydrogen Substances 0.000 description 2
229910052739 hydrogen Inorganic materials 0.000 description 2
125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
229910052757 nitrogen Inorganic materials 0.000 description 2
238000010248 power generation Methods 0.000 description 2
230000009467 reduction Effects 0.000 description 2
238000001004 secondary ion mass spectrometry Methods 0.000 description 2
238000004381 surface treatment Methods 0.000 description 2
UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
230000009471 action Effects 0.000 description 1
230000006978 adaptation Effects 0.000 description 1
125000004429 atom Chemical group 0.000 description 1
230000009286 beneficial effect Effects 0.000 description 1
229910052797 bismuth Inorganic materials 0.000 description 1
JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
238000003421 catalytic decomposition reaction Methods 0.000 description 1
230000003197 catalytic effect Effects 0.000 description 1
210000003850 cellular structure Anatomy 0.000 description 1
230000000295 complement effect Effects 0.000 description 1
238000012790 confirmation Methods 0.000 description 1
238000011109 contamination Methods 0.000 description 1
229910021419 crystalline silicon Inorganic materials 0.000 description 1
230000002950 deficient Effects 0.000 description 1
210000003298 dental enamel Anatomy 0.000 description 1
230000002542 deteriorative effect Effects 0.000 description 1
238000005315 distribution function Methods 0.000 description 1
239000002019 doping agent Substances 0.000 description 1
230000005611 electricity Effects 0.000 description 1
230000002708 enhancing effect Effects 0.000 description 1
238000013213 extrapolation Methods 0.000 description 1
229910052735 hafnium Inorganic materials 0.000 description 1
VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
238000003780 insertion Methods 0.000 description 1
230000037431 insertion Effects 0.000 description 1
229910052746 lanthanum Inorganic materials 0.000 description 1
FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
230000003211 malignant effect Effects 0.000 description 1
230000007246 mechanism Effects 0.000 description 1
239000002923 metal particle Substances 0.000 description 1
239000000203 mixture Substances 0.000 description 1
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
238000002161 passivation Methods 0.000 description 1
230000035515 penetration Effects 0.000 description 1
230000000704 physical effect Effects 0.000 description 1
238000003672 processing method Methods 0.000 description 1
230000004044 response Effects 0.000 description 1
238000004528 spin coating Methods 0.000 description 1
229910001220 stainless steel Inorganic materials 0.000 description 1
239000010935 stainless steel Substances 0.000 description 1
229910052718 tin Inorganic materials 0.000 description 1
238000007740 vapor deposition Methods 0.000 description 1
238000012795 verification Methods 0.000 description 1
238000005406 washing Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
- H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Photovoltaic Devices (AREA)

TW104108169A 2014-03-14 2015-03-13 異質接面太陽能電池及其製造方法 TW201535761A (zh)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2014051160		2014-03-14

Publications (1)

Publication Number	Publication Date
TW201535761A true TW201535761A (zh)	2015-09-16

Family

ID=54071600

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW104108169A TW201535761A (zh)	2014-03-14	2015-03-13	異質接面太陽能電池及其製造方法

Country Status (3)

Country	Link
JP (1)	JP6396425B2 (fr)
TW (1)	TW201535761A (fr)
WO (1)	WO2015137152A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR102018381B1 (ko) *	2017-01-26	2019-09-04	엘지전자 주식회사	태양 전지 및 이의 제조 방법
CN109004053B (zh) *	2017-06-06	2024-03-29	通威太阳能（成都）有限公司	双面受光的晶体硅/薄膜硅异质结太阳电池及制作方法
CN108831967B (zh) *	2018-06-25	2019-10-29	江苏悦阳光伏科技有限公司	一种新型hit太阳能电池及其制备方法
CN110643971A (zh) *	2019-09-27	2020-01-03	上海理想万里晖薄膜设备有限公司	用于制造异质结太阳能电池的cvd设备及其镀膜方法
CN114566561A (zh) *	2020-11-27	2022-05-31	嘉兴阿特斯技术研究院有限公司	异质结太阳能电池及其制作方法
CN114005886B (zh) *	2021-10-29	2024-01-09	苏州光汇新能源科技有限公司	一种适用于室内发电的硅异质结太阳电池结构及其制备方法
CN116247111A (zh) *	2021-12-07	2023-06-09	嘉兴阿特斯技术研究院有限公司	太阳能电池及其制备方法
CN114497288A (zh) *	2022-01-26	2022-05-13	中节能太阳能科技（镇江）有限公司	栅线嵌入选择性重掺杂区域的异质结太阳能电池制造方法
CN114497260B (zh) *	2022-02-08	2024-01-09	理想万里晖半导体设备(上海)股份有限公司	用于制造异质结太阳能电池的方法及异质结太阳能电池
CN116913991A (zh) *	2023-08-01	2023-10-20	天合光能股份有限公司	异质结太阳能电池及其制备方法、光伏组件以及光伏系统

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2000058885A (ja) *	1998-08-03	2000-02-25	Sanyo Electric Co Ltd	太陽電池及びその製造方法
JP2011146528A (ja) *	2010-01-14	2011-07-28	Kaneka Corp	多結晶シリコン系太陽電池およびその製造方法
JPWO2013179529A1 (ja) *	2012-05-30	2016-01-18	パナソニックＩｐマネジメント株式会社	太陽電池

2015
- 2015-02-27 WO PCT/JP2015/055772 patent/WO2015137152A1/fr not_active Ceased
- 2015-02-27 JP JP2016507447A patent/JP6396425B2/ja not_active Expired - Fee Related
- 2015-03-13 TW TW104108169A patent/TW201535761A/zh unknown

Also Published As

Publication number	Publication date
JP6396425B2 (ja)	2018-09-26
WO2015137152A1 (fr)	2015-09-17
JPWO2015137152A1 (ja)	2017-04-06

Publication	Publication Date	Title
TW201535761A (zh)	2015-09-16	異質接面太陽能電池及其製造方法
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CN120111999B (zh)	2025-08-05	一种太阳能电池的制备方法及太阳能电池
JP2007129246A (ja)	2007-05-24	微結晶シリコン膜、半導体装置及び光電変換装置
KR20160142169A (ko)	2016-12-12	태양 전지의 제조 방법
JPH0516655B2 (fr)	1993-03-05