TW201623703A - 用以製造具有經控制濃度之基於氧氣的熱施體的ｎ型單晶矽之晶棒的方法 - Google Patents

用以製造具有經控制濃度之基於氧氣的熱施體的ｎ型單晶矽之晶棒的方法 Download PDF

Info

Publication number: TW201623703A
Authority: TW; Taiwan
Prior art keywords: ingot; pulling; concentration; bath; specifically
Prior art date: 2014-11-10

Application number

TW104137062A

Other languages

English (en)

Chinese (zh)

Inventor

賽巴斯強杜博

艾德里安丹諾

尚保羅嘉蘭德

班諾瑪托

佐帝維爾曼

Original Assignee

法國原子能與替代能源委員會

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2014-11-10

Filing date

2015-11-10

Publication date

2016-07-01

2015-11-10 Application filed by 法國原子能與替代能源委員會 filed Critical 法國原子能與替代能源委員會

2016-07-01 Publication of TW201623703A publication Critical patent/TW201623703A/zh

Links

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239000001301 oxygen Substances 0.000 title claims abstract description 13
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229910021421 monocrystalline silicon Inorganic materials 0.000 title abstract 3
238000000034 method Methods 0.000 claims abstract description 68
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 43
229910052732 germanium Inorganic materials 0.000 claims abstract description 26
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 21
230000015572 biosynthetic process Effects 0.000 claims abstract description 18
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
229910052710 silicon Inorganic materials 0.000 claims abstract description 15
239000010703 silicon Substances 0.000 claims abstract description 15
239000002019 doping agent Substances 0.000 claims abstract description 11
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239000013078 crystal Substances 0.000 claims description 40
239000007787 solid Substances 0.000 claims description 33
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
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238000000137 annealing Methods 0.000 claims description 20
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229910052757 nitrogen Inorganic materials 0.000 claims description 13
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 12
229910052797 bismuth Inorganic materials 0.000 claims description 12
JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 12
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SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
239000000843 powder Substances 0.000 claims description 2
230000002401 inhibitory effect Effects 0.000 abstract 1
235000012431 wafers Nutrition 0.000 description 19
238000001816 cooling Methods 0.000 description 12
230000000694 effects Effects 0.000 description 10
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239000010955 niobium Substances 0.000 description 6
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238000005520 cutting process Methods 0.000 description 5
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125000004429 atom Chemical group 0.000 description 3
239000002800 charge carrier Substances 0.000 description 3
238000011109 contamination Methods 0.000 description 3
229910052684 Cerium Inorganic materials 0.000 description 2
SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 2
GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
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PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
230000008569 process Effects 0.000 description 2
239000000243 solution Substances 0.000 description 2
229910052715 tantalum Inorganic materials 0.000 description 2
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
230000001052 transient effect Effects 0.000 description 2
229910000577 Silicon-germanium Inorganic materials 0.000 description 1
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
230000009471 action Effects 0.000 description 1
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238000004458 analytical method Methods 0.000 description 1
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229910052785 arsenic Inorganic materials 0.000 description 1
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
239000000969 carrier Substances 0.000 description 1
230000008878 coupling Effects 0.000 description 1
238000010168 coupling process Methods 0.000 description 1
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238000002425 crystallisation Methods 0.000 description 1
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238000010790 dilution Methods 0.000 description 1
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238000010494 dissociation reaction Methods 0.000 description 1
230000005593 dissociations Effects 0.000 description 1
238000004090 dissolution Methods 0.000 description 1
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239000010439 graphite Substances 0.000 description 1
229910002804 graphite Inorganic materials 0.000 description 1
238000000227 grinding Methods 0.000 description 1
238000010348 incorporation Methods 0.000 description 1
229910003437 indium oxide Inorganic materials 0.000 description 1
PZOUSPYUWWUPPK-UHFFFAOYSA-N indole Natural products CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 description 1
RKJUIXBNRJVNHR-UHFFFAOYSA-N indolenine Natural products C1=CC=C2CC=NC2=C1 RKJUIXBNRJVNHR-UHFFFAOYSA-N 0.000 description 1
230000001939 inductive effect Effects 0.000 description 1
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239000000463 material Substances 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
238000001465 metallisation Methods 0.000 description 1
239000000203 mixture Substances 0.000 description 1
125000004430 oxygen atom Chemical group O* 0.000 description 1
230000002093 peripheral effect Effects 0.000 description 1
229920001296 polysiloxane Polymers 0.000 description 1
238000001556 precipitation Methods 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
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238000005215 recombination Methods 0.000 description 1
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229910052712 strontium Inorganic materials 0.000 description 1
CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
239000000126 substance Substances 0.000 description 1
239000010455 vermiculite Substances 0.000 description 1
229910052902 vermiculite Inorganic materials 0.000 description 1
235000019354 vermiculite Nutrition 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Silicon Compounds (AREA)

TW104137062A 2014-11-10 2015-11-10 用以製造具有經控制濃度之基於氧氣的熱施體的ｎ型單晶矽之晶棒的方法 TW201623703A (zh)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR1460855A FR3028266B1 (fr)	2014-11-10	2014-11-10	Procede de fabrication d'un lingot de silicium monocristallin de type n a concentration en donneurs thermiques a base d'oxygene controlee

Publications (1)

Publication Number	Publication Date
TW201623703A true TW201623703A (zh)	2016-07-01

Family

ID=52102960

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW104137062A TW201623703A (zh)	2014-11-10	2015-11-10	用以製造具有經控制濃度之基於氧氣的熱施體的ｎ型單晶矽之晶棒的方法

Country Status (4)

Country	Link
EP (1)	EP3218533A1 (fr)
FR (1)	FR3028266B1 (fr)
TW (1)	TW201623703A (fr)
WO (1)	WO2016075092A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWI698935B (zh) *	2017-06-23	2020-07-11	日商Ｓｕｍｃｏ股份有限公司	矽晶圓的熱施體生成行為預測方法、矽晶圓的評估方法及矽晶圓的製造方法
CN114637954A (zh) *	2022-03-25	2022-06-17	宁夏中欣晶圆半导体科技有限公司	晶棒碳含量轴向分布计算方法
TWI924053B (zh)	2023-07-18	2026-05-01	德商世創電子材料公司	經摻雜之矽單晶的晶體拉製方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE102017215332A1 (de) *	2017-09-01	2019-03-07	Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.	Einkristall aus Silizium mit <100>-Orientierung, der mit Dotierstoff vom n-Typ dotiert ist, und Verfahren zur Herstellung eines solchen Einkristalls

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS507557B1 (fr) *	1970-08-26	1975-03-26
US5363796A (en) *	1991-02-20	1994-11-15	Sumitomo Metal Industries, Ltd.	Apparatus and method of growing single crystal
JP2007261846A (ja) *	2006-03-28	2007-10-11	ＳｕｍｃｏＴｅｃｈｘｉｖ株式会社	無欠陥のシリコン単結晶を製造する方法
FR2997096B1 (fr)	2012-10-23	2014-11-28	Commissariat Energie Atomique	Procede de formation d'un lingot en silicium de resistivite uniforme

2014
- 2014-11-10 FR FR1460855A patent/FR3028266B1/fr not_active Expired - Fee Related
2015
- 2015-11-09 WO PCT/EP2015/076101 patent/WO2016075092A1/fr not_active Ceased
- 2015-11-09 EP EP15804688.8A patent/EP3218533A1/fr not_active Withdrawn
- 2015-11-10 TW TW104137062A patent/TW201623703A/zh unknown

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWI698935B (zh) *	2017-06-23	2020-07-11	日商Ｓｕｍｃｏ股份有限公司	矽晶圓的熱施體生成行為預測方法、矽晶圓的評估方法及矽晶圓的製造方法
CN114637954A (zh) *	2022-03-25	2022-06-17	宁夏中欣晶圆半导体科技有限公司	晶棒碳含量轴向分布计算方法
CN114637954B (zh) *	2022-03-25	2023-02-07	宁夏中欣晶圆半导体科技有限公司	晶棒碳含量轴向分布计算方法
TWI924053B (zh)	2023-07-18	2026-05-01	德商世創電子材料公司	經摻雜之矽單晶的晶體拉製方法

Also Published As

Publication number	Publication date
FR3028266B1 (fr)	2016-12-23
FR3028266A1 (fr)	2016-05-13
WO2016075092A1 (fr)	2016-05-19
EP3218533A1 (fr)	2017-09-20

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