TW201742132A - Pressure-sensitive adhesive tape for processing semiconductor substrate - Google Patents

Abstract

The pressure-sensitive adhesive tape 100 for processing semiconductor substrate according to the present invention includes a base material 4 and a pressure-sensitive adhesive layer 2 laminated on the base material 4. Further, the base material 4 has a cutting layer 41 and an expansion layer 42 laminated on the cutting layer 41. A tack force of the expansion layer 42 is 1 kPa or more and 200 kPa or less at 80 DEG C. This makes it possible to provide a pressure-sensitive adhesive tape for processing semiconductor substrate which can suppress or prevent fusion of an expansion layer to a dicer table while can precisely prevent occurrence of warpage in a dicing process.

Description

Adhesive tape for semiconductor substrate processing

The present invention relates to an adhesive tape for processing a semiconductor substrate.

In response to the recent increase in the functionality of electronic devices and the expansion of use in mobile communication applications, the demand for higher density and higher integration of semiconductor devices has increased, and the capacity and density of IC packages have been increasing.

As the semiconductor device, a semiconductor element is mounted on a substrate and modularized. As a method of manufacturing the semiconductor device, for example, the following method has been proposed.

That is, first, a plurality of semiconductor elements are placed on a substrate, and then sealed with a sealing material so as to cover the semiconductor elements placed on the substrate, thereby obtaining a semiconductor sealing body (collective substrate).

Next, an adhesive tape for processing a semiconductor substrate is attached to the substrate side of the semiconductor sealing member, and the semiconductor sealing member is placed on a cutter table via an adhesive tape for processing a semiconductor substrate. In addition, the periphery of the semiconductor sealing member is fixed by a wafer ring, and the semiconductor sealing member is cut in the thickness direction in accordance with the semiconductor element included in the semiconductor sealing member using a dicing blade. As a result, the semiconductor sealing member is cut and separated (single piece), and a semiconductor sealing body is formed on the adhesive tape for processing a semiconductor substrate. Thereby, a plurality of semiconductor sealing bodies are produced at one time on an adhesive tape for processing a semiconductor substrate.

Next, after the expansion step of expanding the adhesive tape for semiconductor substrate processing in the surface direction, the singulated semiconductor sealing body is picked up. Then, a bump that is electrically connected to the electrode provided in the semiconductor element is formed on the lower surface side of the substrate by a conductor post previously formed on the substrate provided in the semiconductor sealing body, thereby obtaining a semiconductor device.

Various types of research have been conducted in recent years on adhesive tapes for processing semiconductor substrates used in the production of such semiconductor devices (see, for example, Patent Document 1).

The adhesive tape for processing a semiconductor substrate generally has a substrate (film substrate) and an adhesive layer formed on the substrate, and the semiconductor sealing member is fixed by an adhesive layer. Further, the adhesive layer is usually composed of a resin composition containing a base resin having adhesiveness and a photocurable resin, so that the formed semiconductor sealing body can be easily picked up after the cutting step of the semiconductor sealing member. When energy is applied to the adhesive layer after the cutting step, the resin composition is hardened and the adhesiveness of the adhesive layer is lowered. That is, the adhesive layer makes it easy to pick up the semiconductor sealing body after the cutting step.

Here, in the method of manufacturing a semiconductor device described above, when the semiconductor sealing member is cut by a dicing saw (dicing saw), the adhesive tape for processing the semiconductor substrate is heated by the friction between the dicing blade and the semiconductor sealing member. Therefore, when the substrate for the adhesive tape for processing a semiconductor substrate has a structure in which the cut-in layer and the expanded layer which is laminated on the opposite side of the adhesive layer from the cut-in layer, the expanded layer which is in contact with the cutter table is heated by the heating It is softened, melted, and welded to the cutter table. As a result, there is a problem that the workability and throughput are adversely affected.

Further, in order to prevent softening and melting of the expanded layer, it is also conceivable to form the expanded layer from a material having a high melting point. However, in this case, the difference in melting point between the adhesive layer and the expanded layer becomes large, and there is a problem that warpage of the adhesive tape for processing a semiconductor substrate occurs.

Further, in the case where the semiconductor wafer is diced and the semiconductor element is picked up as the object to be picked up, the required characteristics of the expanded layer in the dicing step are also required. [Prior Technical Literature] [Patent Literature]

[Patent Document 1]: JP-A-2009-245989

An object of the present invention is to provide an adhesive tape for processing a semiconductor substrate which can reliably prevent the occurrence of warpage during the cutting step and which can suppress or prevent the expansion layer from being welded to the cutter table.

This object is achieved by the present invention described in the following (1) to (15). (1) An adhesive tape for processing a semiconductor substrate, comprising: a substrate; and an adhesive layer laminated on one surface of the substrate, wherein the adhesive tape for processing the semiconductor substrate is characterized in that the substrate has a cut-in layer and is located The one surface side and the expansion layer are laminated on the other surface of the cut layer, and the adhesive force of the expanded layer is 1 kPa or more and 200 kPa or less at 80 °C.

(2) The adhesive tape for processing a semiconductor substrate according to (1) above, wherein the expansion layer contains a resin material having expandability.

(3) The adhesive tape for processing a semiconductor substrate according to the above (2), wherein the expandable resin material is a polyethylene resin.

(4) The adhesive tape for processing a semiconductor substrate according to the above (1), wherein the cut-in layer contains a resin material having a high melt viscosity and an expandability.

(5) The adhesive tape for processing a semiconductor substrate according to the above (4), wherein the resin material having a high melt viscosity and having expandability is an ionic polymer resin.

(6) The adhesive tape for processing a semiconductor substrate according to the above (1), wherein the expanded layer has a thickness of 7 μm or more and 95 μm or less.

(7) The adhesive tape for processing a semiconductor substrate according to the above (1), wherein the thickness of the cut-in layer is 10 μm or more and 140 μm or less.

(8) The adhesive tape for processing a semiconductor substrate according to the above aspect, wherein the adhesive layer has an adhesive force of 50 kPa or more and less than 500 kPa at 25 ° C and 20 kPa or more and less than 300 kPa at 80 ° C.

(9) The adhesive tape for processing a semiconductor substrate according to the above (1), wherein the adhesive strength of the adhesive layer at 80 ° C is set to A [kPa], and the adhesive force of the adhesive layer at 80 ° C is set. When B [kPa], A/B satisfies the relationship of 0.003 or more and 15 or less.

(10) The adhesive tape for processing a semiconductor substrate according to the above (1), wherein the adhesive tape for processing a semiconductor substrate is used for temporarily fixing a semiconductor substrate to the substrate via the adhesive layer, and performing the step of the semiconductor substrate After the dicing is performed in the thickness direction, energy is applied to the adhesive layer, whereby the singulated semiconductor substrate is detached from the adhesive layer.

(11) The adhesive tape for processing a semiconductor substrate according to the above (1), wherein the adhesive layer contains a base resin having adhesiveness.

(12) The adhesive tape for processing a semiconductor substrate according to the above (11), wherein the base resin is an acrylic resin.

(13) The adhesive tape for processing a semiconductor substrate according to the above (11), wherein the adhesive layer further contains a curable resin which is cured by application of energy.

(14) The adhesive tape for processing a semiconductor substrate according to the above (1), wherein the thickness of the adhesive layer is 1 μm or more and 30 μm or less.

(15) The adhesive tape for processing a semiconductor substrate according to the above (1), wherein when the slit is formed in the thickness direction to 60% of the thickness of the substrate, the elongation at break of the substrate is measured in accordance with JIS K 6734. The degree is 50% or more and 400% or less. [Effect of the invention]

According to the invention, the adhesive strength of the expanded layer is 1 kPa or more and 200 kPa or less at 80 °C. Thereby, even in the cutting step, even if it is heated by the friction with the dicing saw, it is possible to surely prevent the occurrence of warpage, and it is possible to suppress or prevent the expansion layer from being welded to the cutter table. Therefore, workability and throughput can be improved when manufacturing a semiconductor device using an adhesive tape for processing a semiconductor substrate.

Hereinafter, the adhesive tape for processing a semiconductor substrate of the present invention will be described in detail. First, before describing the adhesive tape for processing a semiconductor substrate of the present invention, a semiconductor device manufactured by using the adhesive tape for processing a semiconductor substrate of the present invention will be described.

<Semiconductor device> Fig. 1 is a longitudinal cross-sectional view showing an example of a semiconductor device manufactured by using the adhesive tape for processing a semiconductor substrate of the present invention. In the following description, the upper side in FIG. 1 is referred to as "upper" and the lower side is referred to as "lower".

The semiconductor device 20 shown in FIG. 1 has an interposer (substrate) 25 having a conductor post (not shown) that is disposed to penetrate in the thickness direction, a semiconductor element 26 disposed on the interposer 25, and a sealing portion. 27 (mold portion), sealing semiconductor element 26; wiring 23 electrically connected to the conductor post; bump 21 electrically connected to wiring 23; and cladding portion 22, covering wiring 23, and exposing bump 21 Settings.

The interposer 25 is a substrate supporting the semiconductor element 26, and its planar shape is generally a quadrangle such as a square or a rectangle. The interposer 25 is formed with a plurality of through holes (not shown) penetrating in the thickness direction thereof, and a conductor post is provided corresponding to the through hole.

An electrode pad is provided on the lower surface side of the semiconductor element 26. The semiconductor element 26 (one in the present embodiment) is disposed on the interposer 25 such that the electrode pads correspond to the conductor posts.

The sealing portion 27 is formed to cover the upper surface sides of the semiconductor element 26 and the interposer 25 in a state where the semiconductor element 26 is disposed at this position.

The conductor post formed corresponding to the through hole of the interposer 25 is electrically connected to the electrode pad provided in the semiconductor element 26 at the upper end portion thereof.

Further, a wiring 23 formed in a predetermined shape is provided on the lower surface of the interposer 25. A part of the wiring 23 is electrically connected to the lower end portion of the conductor post.

Further, a bump 21 which is a spherical body is electrically connected to the lower surface of the wiring 23. Thereby, the semiconductor element 26 and the bump 21 are electrically connected via the electrode pad, the conductor post, and the wiring 23. Further, a covering portion 22 having an opening portion 221 for exposing the bump 21 from the lower side thereof is provided so as to cover the wiring 23.

Further, in the present embodiment, the semiconductor device 20 includes one semiconductor element 26, but the configuration is not limited thereto. For example, the semiconductor device may include two or more semiconductor elements 26, and may have an electronic component different from the semiconductor element 26.

The semiconductor device having such a configuration is manufactured, for example, by using the adhesive tape for processing a semiconductor substrate of the present invention as follows.

<Manufacturing Method of Semiconductor Device> FIGS. 2 and 3 are longitudinal cross-sectional views for explaining a method of manufacturing the semiconductor device shown in FIG. 1 by using the adhesive tape for processing a semiconductor substrate of the present invention. In the following description, the upper side in FIG. 2 is referred to as "upper" and the lower side is referred to as "lower".

[1] First, after preparing a flat sheet 25' as shown in Fig. 2(a), a plurality of semiconductor elements 26 are placed (mounted) on the sheet 25' (see Fig. 2(b); Configuration steps).

Further, the sheet 25' includes a plurality of through holes (not shown) formed in advance, and further includes a conductor post (not shown) that is embedded in the through holes. When the semiconductor element 26 is placed on the sheet 25', the conductor post is formed at a position corresponding to the electrode pad (terminal) provided in the semiconductor element 26. That is, the sheet 25' is formed in such a manner that the number of conductor posts provided corresponding to the through holes is the same as the total number of electrode pads provided in the plurality of semiconductor elements 26 disposed on the sheet 25'.

Further, the sheet member 25' is cut into a single piece in the thickness direction thereof to form the interposer 25 (substrate) of the semiconductor device 20, and functions as a support for the semiconductor element 26.

The sheet 25' is not particularly limited as long as it has a hardness capable of supporting the semiconductor element 26. For example, the sheet 25' may be either a hard substrate (hard substrate) such as a core substrate made of a core material or a build-up substrate made of a build-up material, or a flexible substrate (flexible substrate). Among these, especially a build-up substrate is preferred. In particular, a build-up substrate can be preferably used from the viewpoint of excellent workability.

The layered material is not particularly limited, and examples thereof include a cured material containing a thermosetting resin such as a phenol resin, a urea resin, a melamine resin, or an epoxy resin, and a resin composition such as a curing agent and an inorganic filler. .

In addition, the core substrate is not particularly limited, and examples thereof include those mainly composed of a thermosetting resin such as a cyanate resin, an epoxy resin, or a bismaleimide-tri-ruthenium resin.

Further, the flexible substrate is not particularly limited, and examples thereof include polyimide, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyether oxime (PES). ), a thermoplastic resin such as polytetrafluoroethylene (PTFE), polybenzonitrile benzoxazole (PIBO), or a liquid crystal polymer.

Further, when the semiconductor element 26 is placed on the sheet 25', the semiconductor element 26 is placed at a position corresponding to the electrode pad of the semiconductor element 26 at the position of the conductor post provided in the sheet 25'. Further, with this arrangement, the semiconductor element 26 is placed on the sheet 25' at a position where the semiconductor element 26 of the semiconductor device 20 to be formed is placed.

Further, the semiconductor element 26 may be fixed to the sheet 25' or may not be fixed, but is preferably fixed by an adhesive (underfill) such as an epoxy-based adhesive. Thereby, in the next step [2], when the semiconductor element 26 is sealed by the sealing portion 27, the positional shift of the semiconductor element 26 can be effectively prevented.

[2] Next, the surface on the upper surface side of the sheet 25' (the surface on the side where the semiconductor element 26 is disposed) is formed to cover the sheet 25' and the semiconductor element 26 (see FIG. 2(c) ; sealing portion forming step).

Thereby, the semiconductor sealing member 270 in which the sheet member 25' and the semiconductor element 26 are sealed by the sealing portion 27 on the upper surface side of the sheet member 25' is obtained.

The method of forming the sealing portion 27 is not particularly limited, and examples thereof include the following methods. First, a thermosetting resin composition such as a particulate epoxy resin composition is melted, and a thermosetting resin composition in this state is supplied onto the upper surface of the sheet 25' so as to cover the sheet 25' and the semiconductor element 26. Then, the molten thermosetting resin composition is compression-molded. Thereby, the sealing portion 27 is formed. According to this method, the semiconductor element 26 can be easily and densely sealed on the sheet 25' by the sealing portion 27.

[3] Next, an adhesive tape 100 for semiconductor substrate processing (hereinafter, also simply referred to as "adhesive tape 100") having a substrate 4 and an adhesive layer 2 laminated on the substrate 4 is prepared, as shown in Fig. 2(d). On the sheet 25' side (lower surface side) of the semiconductor sealing member 270, the adhesive tape 100 is laminated (attached) to the semiconductor sealing member 270 so that the adhesive layer 2 is on the side of the semiconductor sealing member 270 (semiconductor Substrate) (attachment step).

Attachment of the adhesive tape 100 to the semiconductor sealing joint 270 can be performed, for example, as follows. First, an adhesive tape 100 is provided on a cutter table (not shown). The semiconductor sealing member 270 is placed on the adhesive layer 2 such that the surface of the semiconductor sealing member 270 on the side of the sheet 25' faces the adhesive layer 2. In this state, the semiconductor sealing joint 270 is lightly pressed. Thereby, the semiconductor sealing joint 270 is attached to the adhesive tape 100. Alternatively, the semiconductor sealing member 270 may be attached to the adhesive tape 100 in advance, and then placed on the cutter table.

The adhesive tape 100 (cut tape) supports the semiconductor sealing member 270 via the adhesive layer 2 via the adhesive layer 2, and has adhesiveness to the semiconductor sealing member 270 by applying energy to the adhesive layer 2. Functional.

In the adhesive tape 100 (adhesive tape for processing a semiconductor substrate of the present invention), the adhesive layer of the expanded layer 42 provided at 80 ° C is 1 kPa or more and 200 kPa or less. Therefore, in the next step [4] (cutting step), even if the adhesive tape 100 is heated by the friction between the dicing saw and the semiconductor sealing member 270, the occurrence of warpage of the adhesive tape 100 can be surely prevented, and The fusion of the expansion layer 42 to the cutter table is inhibited or prevented. Therefore, the workability and the throughput of the semiconductor device 20 using the adhesive tape 100 can be improved, and the details thereof will be described later.

[4] Next, the semiconductor sealing member 270 to which the adhesive tape 100 is attached is fixed by, for example, using a wafer ring or the like. Then, using the dicing blade (cutting saw), the semiconductor sealing joint 270 is cut (cut) in the thickness direction corresponding to the position corresponding to each semiconductor device 20 to be formed, that is, each semiconductor element 26, thereby forming Concave portion 62 (cutting step (cutting step); see Fig. 2(e)).

Thereby, a plurality of semiconductor sealing bodies 270 are obtained in a state in which the semiconductor sealing body 290 which is singulated in accordance with each of the semiconductor elements 26 is attached to the adhesive tape 100.

As described above, since the plurality of semiconductor sealing bodies 290 are formed at one time on the adhesive tape 100, the productivity of the semiconductor device 20 obtained by the semiconductor sealing body 290 through the subsequent steps can be improved.

In addition, at this time, the cutting dust (dust) generated when the semiconductor sealing member 270 is cut is prevented from being scattered, and the semiconductor sealing member 270 is prevented from being unnecessarily heated, and the cutting water is supplied to the semiconductor sealing member 270. At the same time, the semiconductor sealing joint 270 is cut.

In addition, at this time, the adhesive tape 100 has a buffering function and functions to prevent cracking or chipping when the semiconductor sealing member 270 is cut.

Further, in the present embodiment, as shown in FIG. 2(e), the cutting of the semiconductor sealing member 270 using the dicing blade is performed in the thickness direction of the substrate 4 to reach the middle of the substrate 4. Thereby, the singulation of the semiconductor sealing member 270 can be reliably performed.

[5] Next, by applying energy to the adhesive layer 2 provided in the adhesive tape 100, the adhesiveness of the adhesive layer 2 to the semiconductor sealing body 290 is lowered. Thereby, a state in which peeling occurs between the adhesive layer 2 and the semiconductor sealing body 290 is obtained.

The method of applying energy to the adhesive layer 2 is not particularly limited, and examples thereof include a method of irradiating the adhesive layer 2 with energy rays, a method of heating the adhesive layer 2, and the like. Among these, a method of irradiating the adhesive layer 2 with energy rays from the side of the base material 4 of the adhesive tape 100 is preferable.

In this method, the semiconductor element 26 can be used as a method of imparting energy without unnecessary heat history and capable of imparting energy to the adhesive layer 2 relatively simply and efficiently.

In addition, as the energy ray, for example, a particle beam such as an ultraviolet ray, an electron beam, or an ion beam may be used, or two or more types of energy ray may be combined. Among these, ultraviolet rays are particularly preferred. When ultraviolet rays are used, the adhesion of the adhesive layer 2 to the semiconductor device 20 (semiconductor sealing body 290) can be efficiently lowered.

[6] Next, the adhesive tape 100 is peeled off from the semiconductor sealing body 290. The peeling of the adhesive tape 100 can be carried out, for example, by radially stretching the adhesive tape 100 by an expansion device (not shown), and the semiconductor sealing bodies 290 obtained by singulation are fixed to each other. The spacer is opened (expanding step; see FIG. 2(f).), and then the semiconductor sealing body 290 is brought into a state of being jacked up by using a needle or the like, in this state, by a vacuum colette or Picking up by suction of an air pen (air pincette) (pickup step; see Fig. 3(a)).

[7] Next, as shown in FIG. 3(b), on the side of the interposer 25 of the semiconductor sealing body 290, that is, the surface side (lower surface side) of the interposer 25 opposite to the semiconductor element 26 is electrically connected to the conductor post. In the manner, the wiring 23 patterned in a predetermined shape is formed (wiring forming step).

The method of forming the wiring 23 is not particularly limited, and examples thereof include a method of forming the wiring 23 by an electroplating method such as electrolytic plating or electroless plating, and II: a side of the interposer 25 of the semiconductor sealing body 290. The surface of the surface is supplied with a liquid material containing a conductive material, dried, and solidified to form the wiring 23. Among these, it is preferable to form the wiring 23 by the method of I, in particular, by electrolytic plating. According to the electrolytic plating method, the wiring 23 which exhibits excellent adhesion to the conductor post can be easily and surely formed.

[8] Next, as shown in FIG. 3(c), the surface of the interposer 25 of the semiconductor sealing body 290, that is, the surface side (lower surface side) of the interposer 25 opposite to the semiconductor element 26 is formed with an opening portion 221 so that The covering portion 22 in which a part of the wiring 23 is exposed (the covering portion forming step).

Further, in the next step [9], the opening portion 221 is formed so as to correspond to the position at which the bump 21 is formed.

Such a coating portion 22 (cladding layer) is usually composed of a laminate, and is formed, for example, by an electroless plating method in which an upper layer mainly composed of Au is laminated on a layer mainly composed of Ni.

[9] Next, as shown in FIG. 3(d), the bump 21 is formed so as to be electrically connected to the wiring 23 exposed from the opening 221 (bump connecting step).

Here, in the present embodiment, the connection between the conductor post and the bump 21 is performed via the wiring 23, whereby the bump 21 can be disposed at a position different from the conductor post in the surface direction of the interposer 25. In other words, it is possible to arrange the bumps 21 so as not to overlap the center portion of the conductor post. Therefore, the bumps 21 can be formed at desired positions on the lower surface of the obtained semiconductor device 20.

The method of bonding the bump 21 to the wiring 23 is not particularly limited, and is performed, for example, by interposing a viscous flux between the bump 21 and the wiring 23.

Further, examples of the material of the bump 21 include solder such as solder, silver solder, copper solder, and phosphor bronze solder. The semiconductor device 20 is fabricated by the above steps.

According to the method of manufacturing the semiconductor device 20, the semiconductor sealing member 270 obtained in the above step [2] can be manufactured in one time on the adhesive tape 100 by the above steps [3] and [4]. In the semiconductor sealing body 290, a plurality of semiconductor devices 20 can be manufactured from one semiconductor sealing member 270 by repeating the above steps [5] to [9]. Therefore, the productivity of the semiconductor device 20 obtained by the semiconductor sealing and connecting body 270 can be improved.

Hereinafter, the adhesive tape 100 for semiconductor substrate processing (adhesive tape for semiconductor substrate processing of the present invention) used in the method of manufacturing the semiconductor device 20 will be described.

[Adhesive tape for processing a semiconductor substrate] FIG. 4 is a longitudinal cross-sectional view showing an embodiment of an adhesive tape for processing a semiconductor substrate of the present invention, and FIG. 5 is a view showing a fracture of a substrate provided in the adhesive tape for processing a semiconductor substrate of the present invention. Top view of the test piece used for elongation. In the following description, the upper side in FIG. 4 is referred to as "upper" and the lower side is referred to as "lower".

The adhesive tape 100 for semiconductor substrate processing is characterized by comprising a base material 4 and an adhesive layer 2 laminated on the upper surface (one surface) of the base material 4, and the base material 4 has a cut-in layer 41 on the upper surface (one surface) side. And the expanded layer 42 laminated on the lower surface (the other surface) of the cut-in layer 41, the adhesive force of the expanded layer 42 is 1 kPa or more and 200 kPa or less at 80 degreeC. As described above, since the adhesive force of the expanded layer 42 is 1 kPa or more and 200 kPa or less at 80 ° C, the adhesive tape 100 is heated by the friction of the dicing saw and the semiconductor sealing joint 270 in the above step [4] (cutting step). Also, it is possible to surely prevent the occurrence of warpage of the adhesive tape 100, and it is possible to suppress or prevent fusion of the expansion layer 42 to the cutter table. Therefore, workability and throughput of the semiconductor device 20 using the adhesive tape 100 can be improved.

Hereinafter, the substrate 4 and the adhesive layer 2 which are provided in the adhesive tape (cut tape) 100 will be described in detail.

Further, the adhesive tape 100 has a function of lowering the adhesion of the adhesive layer 2 to the semiconductor sealing member 270 by applying energy to the adhesive layer 2 provided therein. Examples of such a method of applying energy to the adhesive layer 2 include a method of irradiating an energy ray to the adhesive layer 2, a method of heating the adhesive layer 2, and the like, and the semiconductor element 26 does not need to undergo an unnecessary heat history. A method of irradiating the adhesive layer 2 with energy rays can be preferably used. Therefore, in the following, the adhesive layer 2 will be described as a representative of the decrease in the adhesion by irradiation of energy rays.

<Substrate 4> In the present embodiment, the base material 4 is composed of a laminated body and has a function of supporting the adhesive layer 2 provided on the base material 4, and the laminated body has the cut-in layer 41 on the upper surface side and laminated thereon. The expanded layer 42 is cut into the lower surface of the layer 41.

As described above, by forming the substrate 4 as a laminate including the cut-in layer 41 and the expanded layer 42 (expanded layer), when the substrate 4 is cut by the dicing blade in the above step [4], the generation of chips can be reduced. Further, when the expansion is performed using the expansion device in the above step [6], it is possible to provide an excellent expandability.

Therefore, the case where the base material 4 is composed of a laminated body including the cut-in layer 41 and the expanded layer 42 will be described below.

<<Cutting layer 41>> The cutting layer 41 is a layered body having the cut-in layer 41 and the expanded layer 42 and is cut into the middle layer in the thickness direction by the dicing blade in the above step [4].

Further, the cut-in layer 41 is required to reduce the generation of chips during the cutting.

That is, in the above-described step (cutting step) [4], when the semiconductor sealing joint 270 is cut, frictional heat is generated between the dicing blade and the adhesive tape 100. Therefore, the contact portion with the dicing blade is exposed to a high temperature, so that the substrate 4 is in a molten state. Therefore, it is considered that the molten resin adheres to the surface of the dicing blade to cause clogging to hinder the normal cutting, or the substrate 4 which is melted and softened is stretched by the rotation of the dicing blade, thereby being elongated in the aforementioned step [4]. One of the causes of substrate burrs. Therefore, as the cut-in layer 41 which is cut by the cutting blade, it is required to increase the melt viscosity, and the resin does not adhere to the cutting blade even in the case where frictional heat is generated during cutting, and the generation of chips is remarkably reduced.

Further, in the above step [6], since the cut-in layer 41 is expanded into a radial shape by using the expansion device, it is required to have the expandability (expansion property) in the surface direction of the base material 4.

From the above, the cut-in layer 41 is preferably a resin material having a high melt viscosity and an expandability. Thereby, even if frictional heat is generated in the above-described step [4], it is possible to surely suppress or prevent the resin from adhering to the blade, and it is possible to significantly reduce the generation of chips, and since the cut-in layer 41 is compared at normal temperature. Since it is soft, when the expansion device is radially expanded in the above step [6], the expandability of the cut-in layer 41 can be improved.

Further, examples of the resin material having high melt viscosity and expandability include an ionic polymer resin, EMMA (ethylene-methyl methacrylate copolymer), EMA (ethylene-methyl acrylate copolymer), and EEA ( Ethylene-(meth)acrylate copolymer, such as an ethylene-ethyl acrylate copolymer, and an EVA (ethylene-vinyl acetate copolymer), etc. can be used, and one type of these can be used together, or two or more types are used together. Among these, an ionic polymer resin is preferred. With this configuration, when the dicing blade is cut into the cut-in layer 41, it is possible to reliably suppress or prevent the occurrence of chips and burrs of the substrate, and when the expansion device is radially expanded, the expandability can be improved and the expansion can be improved. The transmittance of visible light of the cut-in layer 41 becomes more excellent.

In the present specification, the ionic polymer resin refers to a binary copolymer using ethylene and (meth)acrylic acid as a constituent component of a polymer, or ethylene, (meth)acrylic acid, and (meth) using a metal ion. The resin obtained by crosslinking the ternary copolymer of the acrylate as a constituent component of the polymer can be used alone or in combination of two or more.

Further, examples of the metal ion include potassium ion (K ⁺ ), sodium ion (Na ⁺ ), lithium ion (Li ⁺ ), magnesium ion (Mg ⁺⁺ ), and zinc ion (Zn ⁺⁺ ). Among these, zinc ions (Zn ⁺⁺ ) are preferable as the metal ions. Thereby, the crosslinked structure in the ionic polymer resin is stabilized, so that the cutting chips can be prevented from being generated, and since the water resistance is high, it is possible to surely suppress the swelling of the cut layer 41 due to the cutting water at the time of cutting.

Further, it is a ternary copolymer based on a constituent component containing ethylene and (meth)acrylic acid as a polymer, or a constituent of a polymer composed of ethylene, (meth)acrylic acid, and (meth)acrylic acid ester as a polymer. The degree of neutralization of the cation (metal ion) in the carboxyl group of the substance is preferably 40 mol% or more and 75 mol% or less. Further, the ionic polymer resin can be obtained by using a synthesis, and a commercially available one can also be used.

Further, the ionic polymer resin is a resin obtained by crosslinking a ternary copolymer of ethylene, (meth)acrylic acid, and alkyl (meth) acrylate as a constituent component of a polymer, among the foregoing, by a metal ion. It is better. That is, as the ionic polymer resin, a component containing a (meth)acrylic acid alkyl ester as a polymer is preferable. Thereby, it is possible to impart appropriate flexibility to the cut-in layer 41, and it is possible to improve the workability of the cut-in layer 41. Further, the transmittance of visible light in the cut-in layer 41 can be further improved.

Further, the melting point of the ionic polymer resin is preferably 80 ° C or higher. Thereby, the heat resistance of the cut-in layer 41 can be improved. Further, the upper limit of the melting point of the ionic polymer resin is not particularly limited, and is substantially about 100 °C.

Further, in the test method shown in JIS K 7210 "Flow Test Method for Thermoplastic Plastics", the melt flow rate (MFR) at a test temperature of 190 ° C and a test load of 21.18 N is 3 g/10 min or less. good. Thereby, the melt viscosity of the cut-in layer 41 can be improved, and as a result, the generation of chips in the cut-in layer 41 of the adhesive tape 100 can be reliably suppressed. Further, the lower limit of the MFR of the ionic polymer resin is not particularly limited, and is substantially 0.8 g/10 min.

Further, when the cut-in layer 41 contains an ionic polymer resin, it may contain another resin material different from the ionic polymer resin.

The resin material is not particularly limited, and examples thereof include polyethylene such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, and ultra low density polyethylene, such as random copolymerization. Polypropylene, block copolymerized polypropylene, polypropylene such as homopolypropylene, polyolefin resin such as polyvinyl chloride, polybutene, polybutadiene, polymethylpentene, ethylene-vinyl acetate copolymer, Olefin copolymerization of ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random, alternating) copolymer, ethylene-propylene copolymer, ethylene-butene copolymer, ethylene-hexene copolymer Polyester resin such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate or polybutylene naphthalate, polyurethane, poly Amine, polyamine, polyether ketone such as polyetheretherketone, polyether oxime, polystyrene, fluororesin, polyoxyxene resin, cellulose resin, such as styrene thermoplastic elastomer, polypropylene Olefin-based thermoplastic elastomers such as thermoplastic elastomers, acrylic resins, Ester-based thermoplastic elastomer, polyvinyl isoprene (polyvinyl isoprene), thermoplastic resin such as polycarbonate, or a mixture of these thermoplastic resins, these can be used in one kind or in combination of two or more.

Further, the cut-in layer 41 may contain an additive such as an antioxidant, a filler, or the like in addition to the resin material.

The content of the ionic polymer resin of the cut-in layer 41 is preferably 60% by weight or more and 100% by weight or less, more preferably 80% by weight or more and 100% by weight or less. By the above lower limit value, the function as the cut-in layer 41 can be surely exhibited.

The cut-in layer 41 is preferably 50% or more and 350% or less at 80 ° C as measured according to JIS K 7127, and more preferably 100% or more and 200% or less. The cut-in layer 41 having an elongation at break at 80 ° C within the above range can be said to be a layer having a high melt viscosity and a reduced generation of chips when cut by a cutting blade.

Further, the cut-in layer 41 is preferably 70 MPa or more and 400 MPa or less in terms of tensile modulus of elasticity measured according to IPC TM-650 2.4.19, and more preferably 100 MPa or more and 300 MPa or less. The cut-in layer 41 having a tensile modulus of elasticity within the above range can be said to have a layer which is excellent in expandability and which is reduced in the cut-in layer 41 when the adhesive tape 100 is stretched into a radial shape by an expanding device.

Further, the thickness of the cut-in layer 41 is thicker than the depth (hereinafter, also referred to as "cut-in amount") which is cut into the cut-in layer 41 by the dicing blade. Specifically, the thickness of the cut-in layer 41 is preferably 10 μm or more and 140 μm or less, and more preferably 20 μm or more and 120 μm or less. Thereby, in the above step [4], the semiconductor sealing member 270 is cut to the middle of the substrate 4, and at this time, the cut layer 41 can be individually cut, so that the reduction of the chips generated by the cutting can be achieved. In this case, the thickness of the cut-in layer 41 is preferably set to 60% or more and 90% or less, and more preferably set to 60% or more and 80% or less, with respect to the thickness of the entire adhesive tape 100.

Further, it is preferable that the cut-in layer 41 has a functional group such as a hydroxyl group or an amine group which is reactive with the constituent material contained in the adhesive layer 2 on the surface thereof.

Further, the cut-in layer 41 may be composed of a laminate (multilayer body) in which a plurality of layers made of different resin materials are laminated. Further, it may be composed of a blend film obtained by dry blending the above resin material.

<<Expansion Layer 42>> The expansion layer 42 is in a laminate having the cut-in layer 41 and the expansion layer 42 and is not required to be cut by the cutting blade in the aforementioned step [4] and is expanded by using the expansion device in the aforementioned step [6]. Radial layer.

In the present invention, the adhesive force of the expanded layer 42 is 1 kPa or more and 200 kPa or less at 80 °C.

Here, when the adhesive force at 80 ° C is less than the above lower limit value, the melting point of the expanded layer 42 is lowered. Therefore, in the above step [4] (cutting step), the adhesive tape 100 is heated by the friction between the dicing saw and the semiconductor sealing joint 270, and the expanded layer 42 is softened/melted. As a result, the expansion layer 42 is sometimes welded to the cutter table. In addition, when the adhesive force at 80 ° C exceeds the above upper limit, the difference between the melting points of the constituent materials constituting the adhesive layer 2 and the melting point of the expanded layer 42 tends to increase. Therefore, in the above step [4] (cutting step), the adhesive tape 100 is heated due to friction between the dicing saw and the semiconductor sealing member 270, and the adhesive tape 100 may be warped.

On the other hand, in the above-described step [4] (cutting step), the adhesive force of the expanded layer 42 at 80 ° C is adhered to the adhesive tape 100 even by the friction of the dicing saw and the semiconductor sealing joint 270. Heating can also reliably prevent the occurrence of warpage of the adhesive tape 100, and it is possible to suppress or prevent the expansion layer 42 from being welded to the cutter table. Therefore, workability and throughput of the semiconductor device 20 using the adhesive tape 100 can be improved.

Therefore, the expansion layer 42 is required to have excellent spreadability (expansion property) in the surface direction of the substrate 4 and the adhesive force at 80 ° C is within the above range, and the expandable layer 42 can preferably use a resin material having expandability.

Examples of the expandable resin material include a polyethylene resin such as low density polyethylene and medium density polyethylene, EMMA (ethylene-methyl methacrylate copolymer), and EMA (ethylene-acrylic acid). Ethylene-(meth)acrylate copolymer such as methyl ester copolymer) or EEA (ethylene-ethyl acrylate copolymer), EVA (ethylene-vinyl acetate copolymer), olefin-based elastomer, styrene-based elastomer, etc. For each of the elastomers, one type of these may be used or two or more types may be used in combination. Since the expanded layer 42 made of such a resin material becomes soft at normal temperature, it is excellent in expandability when expanded into a radial shape by the expansion device in the above step [6]. Among these, a polyethylene resin is preferable, and a low density polyethylene is particularly preferable. Thereby, when the expansion device is expanded into a radial shape, the expandability of the expansion layer 42 can be further improved. Further, when low-density polyethylene is used, the low-density polyethylene has a melting point higher than that of the ionic polymer resin and has high heat resistance, so that the adhesive strength at 80 ° C can be made within the above range. Further, the transmittance of visible light of the expanded layer 42 is further improved.

In the present specification, low density polyethylene refers to a density of 0.880g / cm ³ or more and less than 0.940g / cm ³ of polyethylene. The low-density polyethylene having a density of long lines are within the above range can, wherein, 0.910g / cm ³ or more and 0.930g / cm ³ or less is particularly preferred. Further, a low-density polyethylene having a density within the range is defined as a long-chain branch (the branch length is not particularly limited) obtained by polymerizing an ethylene monomer by a high pressure method, and is called a so-called " Low-density polyethylene or ultra-low-density polyethylene, and a low-pressure method for polymerizing ethylene and an α-olefin monomer having a carbon number of 3 to 8 is called "linear low-density polymerization". The term "ethylene" (the length of the short-chain branch at this time is 1 to 6 carbon atoms), and the "ethylene-α-olefin copolymer elastomer" included in the above-mentioned density range. Further, the density of the low density polyethylene can be measured in accordance with JIS K 7112.

Further, the melting point of the low-density polyethylene is preferably 90° C. or higher and 140° C. or lower, and more preferably 110° C. or higher and 130° C. or lower. When the melting point of the low-density polyethylene is within this range, the expanded layer 42 can have excellent heat resistance and the rigidity at normal temperature can be lowered, so that it can be further excellent in expandability.

Further, the adhesion of the expanded layer 42 can be adjusted by setting the surface roughness Ra of the lower surface (surface opposite to the cut-in layer 41) of the expanded layer 42. In other words, as the surface roughness Ra is increased, the above-described adhesive force can be lowered, and the surface roughness Ra can be made smaller, whereby the above-mentioned adhesive force can be improved. In addition, the surface roughness Ra is slightly different depending on the type of the constituent material contained in the expanded layer 42. For example, it is preferably 0.2 μm or more and 2.0 μm or less, and preferably 0.4 μm or more and 1.5 μm or less. For better. By setting the surface roughness Ra within the range, the adhesion of the expanded layer 42 at 80 ° C can be more surely within the above range.

Here, the ionic polymer resin contained in the cut-in layer 41 is preferably a 2-membered copolymer of ethylene and (meth)acrylic acid as a constituent component of the polymer, or ethylene or (meth) A resin obtained by crosslinking a ternary copolymer of acrylic acid and (meth) acrylate as a constituent component of a polymer, and containing ethylene as a monomer component.

Further, it is preferable that the monomer component is ethylene in the low density polyethylene contained in the expansion layer 42.

Thus, when the cut-in layer 41 contains an ionic polymer resin and the expanded layer 42 contains a low-density polyethylene, both the cut-in layer 41 and the expanded layer 42 contain ethylene as a monomer component. Therefore, in the adhesive tape 100, the adhesion between the cut-in layer 41 and the expanded layer 42 is improved by the intermolecular interaction effect between the cut-in layer 41 and the expanded layer 42, and thus it is possible to surely suppress or prevent the adhesion therebetween. Inter-layer peeling occurs between the two.

Further, when the expanded layer 42 contains low density polyethylene, it may contain other resin materials different from the low density polyethylene.

The resin material is not particularly limited, and examples thereof include polyethylene such as linear polyethylene, medium density polyethylene, high density polyethylene, and ultra low density polyethylene, such as random copolymer polypropylene and block. Copolymerized polypropylene, polypropylene such as polypropylene, polyvinyl chloride, polybutene, polybutadiene, polymethylpentene, etc., polyolefin-based resin, ethylene-vinyl acetate copolymer, such as zinc ion cross-linking Ionic polymer such as body, sodium ion crosslinked body, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random, alternating) copolymer, ethylene-propylene copolymer, ethylene-butyl Olefin copolymers such as olefin copolymers and ethylene-hexene copolymers, polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, and polybutylene naphthalate Polyester resin such as glycol ester, polyurethane, polyimide, polyamine, polyether ketone such as polyetheretherketone, polyether oxime, polystyrene, fluororesin, polyoxyxene resin, cellulose Resin, such as styrene thermoplastic elastomer, polypropylene thermoplastic elastomer, etc. A thermoplastic resin such as a hydrocarbon-based thermoplastic elastomer, an acrylic resin, a polyester-based thermoplastic elastomer, polyvinyl isoprene or polycarbonate, or a mixture of these thermoplastic resins, one of these may be used or 2 The above combination is used.

Further, the expansion layer 42 may contain an additive such as an antioxidant, a filler, or the like in addition to the resin material.

Further, the expansion layer 42 preferably contains an antistatic agent. Thereby, it is possible to surely suppress or prevent the semiconductor device 20 in the above-described steps (attachment (tape mounting) step) [3], the aforementioned step (cutting step) [4], and the aforementioned step (pickup step) [6]. The generation of static electricity in the semiconductor component 26.

The antistatic agent is not particularly limited, and examples thereof include a surfactant, a permanent antistatic polymer (IDP), a metal material, a metal oxide material, and a carbon-based material. One of these may be used or Two or more types are used in combination.

Examples of the surfactant in the above-mentioned surfactants include an anionic surfactant, a cationic surfactant, a nonionic surfactant, and a two-ionic surfactant.

As the permanent antistatic polymer (IDP), for example, all of the IDPs such as polyester phthalamide series, polyester decylamine, polyether ester decylamine, and polyurethane series can be used.

Further, examples of the metal material include gold, silver, copper, silver plated copper, nickel, and the like, and these metal powders can be preferably used.

Examples of the metal oxide material include indium tin oxide (ITO), indium oxide (10), antimony tin oxide (ATO), indium zinc oxide (IZO), and tin oxide (SnO ₂ ), which can be preferably used. Etc. metal oxide powder.

Further, examples of the carbon-based material include carbon black, carbon nanotubes such as single-layer carbon nanotubes, multilayer carbon nanotubes, carbon nanofibers, CN nanotubes, CN nanofibers, and BCN. Nanotubes, BCN nanofibers, graphene, etc.

Among these, at least one of a surfactant, a permanent antistatic polymer (IDP), a metal oxide material, and carbon black is preferable as the antistatic agent. Since the temperature dependence of these resistivities is small, the amount of change in the surface resistance value of the expanded layer 42 can be reduced even when the substrate 4 is heated during dicing.

When the antistatic agent is contained in the expanded layer 42, the content of the antistatic agent in the expanded layer 42 is preferably 5% by weight or more and 40% by weight or less, more preferably 15% by weight or more and 30% by weight or less. When the content of the antistatic agent is less than the above lower limit, the antistatic property may not be sufficiently imparted to the expanded layer 42 depending on the type of the antistatic agent. Further, when the content of the antistatic agent exceeds the above upper limit value, not only an undesired further antistatic property but also a cost advantage is not preferable.

Further, the content of the low-density polyethylene in the expanded layer 42 is preferably 40% by weight or more and 100% by weight or less, more preferably 60% by weight or more and 100% by weight or less. By the above lower limit value, the function as the expansion layer 42 can be surely exhibited. Further, the adhesion to the cut-in layer 41 can be excellent.

The adhesive strength of the expandable layer 42 may be 1 kPa or more and 200 kPa or less at 80 ° C, but preferably 1 kPa or more and 100 kPa or less, and more preferably 1 kPa or more and 60 kPa or less. Thereby, the aforementioned effects can be exhibited more remarkably.

In addition, the measurement of the adhesive force of the expansion layer 42 is carried out by JIS Z 0237, for example, by the tacking tester TAC-II of RHESCA CO., LTD., and using the probe to The pressurization value is set and the constant load is continuously controlled so that the pressurization value is maintained until the set time elapses, and the expanded layer 42 of the adhesive tape 100 faces upward, and the SUS304 having a diameter of 3.0 mm is made from the upper side. Probe contact. At this time, the speed at which the probe was brought into contact with the measurement sample was 30 mm/min, the contact load was set to 100 gf, the contact time was set to 1 second, and at the adhesive force of 80 ° C, the probe temperature and the plate temperature were set. It is 80 °C. Then, the probe was peeled off at a peeling speed of 600 mm/min, and the force required for peeling was measured as the adhesive force.

Further, the expanded layer 42 has a tensile modulus of elasticity of 30 MPa or more and 300 MPa or less as measured according to IPC TM-650 2.4.19, and more preferably 100 MPa or more and 200 MPa or less. The expanded layer 42 having a tensile modulus of elasticity within the above range can be said to have a layer which is excellent in expandability and which is reduced in the expanded layer 42 when the adhesive tape 100 is stretched into a radial shape by an expanding device.

Further, the thickness of the expanded layer 42 is preferably 7 μm or more and 95 μm or less, and more preferably 15 μm or more and 80 μm or less. Thereby, when the adhesive tape 100 is stretched in the above step [6], the strength of the expanded layer 42 to the extent that it does not break can be surely imparted to the expanded layer 42. In this case, the thickness of the expanded layer 42 is preferably 40% or more and 95% or less, and more preferably 60% or more and 80% or less with respect to the thickness of the entire adhesive tape 100.

Further, the expanded layer 42 may be composed of a plurality of laminated bodies (multilayer bodies) formed by laminating a plurality of layers of different resin materials.

When the slit 4 is formed in the thickness direction to 60% of the thickness of the substrate 4 having the above configuration, the elongation at break of the substrate 4 measured in accordance with JIS K 6734 is preferably 50% or more and 400% or less, preferably 50%. Above and 150% or less is more preferable. As described above, by determining the elongation at break of the substrate 4 when the slit is formed along the thickness direction of the substrate 4, the state of the substrate 4 can be approximated by the semiconductor sealing member 270 in the above step [4]. After a part of the adhesive tape 100 is cut, the adhesive tape 100 is stretched into a state of the substrate 4 when it is radially expanded by the expanding device in the above step [6]. Therefore, the elongation at break of the substrate 4 when the slit is formed along the thickness direction of the substrate 4 is within the above range, even if the substrate 4 is cut to the middle by the cutting in the above step [4], It can be said that in the foregoing step [6], the occurrence of breakage in the substrate 4 when the adhesive tape 100 is stretched into a radial shape by the expanding device is reduced.

Further, the elongation at break can be obtained as follows. In the present specification, a test piece 200 having a dumbbell shape as shown in Fig. 5 (having a total length of 120 mm, a thickness of 100 μm, a length of the central portion 201 of 80 mm, and a width of 10 mm) is prepared in accordance with JIS K 6734. In the middle (substantially center) of the center portion 201 of the test piece 200, a slit 203 which reaches 60% of the thickness is formed in the thickness direction along the short side direction thereof. Further, after the reticle 204 is drawn at a position (interval interval) of 40 mm from the slit 203, the test piece 200 is attached to the tensile test by fixing the end portion 202 so that the distance between the chucks becomes 80 mm. Device (manufactured by A&D Company, Limited, "Tensilon RTC-1250"). Then, the test piece 200 was stretched at a speed of 200 mm/sec, and the interval (line after stretching) [mm] at the time of breakage of the test piece 200 was measured. Thereby, the elongation at break can be obtained based on the following calculation formula (1).

Elongation at break (%) = {(interval after stretching [mm] - 40 [mm]) / 40 [mm]} × 100 (1)

Further, the total light transmittance of the substrate 4 under the D65 standard light source measured according to the method specified in JIS K 7361-1 is preferably 85% or more and 98% or less, and more preferably 90% or more and 98% or less. More than 95% and 98% or less is more preferable. Thereby, the light transmittance of the adhesive tape 100 can be made excellent. Therefore, it is possible to surely prevent the occurrence of a defect in the semiconductor sealing body 290 formed by the singulation of the semiconductor sealing member 270 of the above-described step [4], and the process proceeds to the step after the above step [6].

Further, the thickness of the substrate 4 having the above configuration is preferably 20 μm or more and 220 μm or less, and more preferably 40 μm or more and 200 μm or less. When the thickness of the base material 4 is within the above range, the semiconductor sealing member 270 can be protected (mitigated) from the impact during the dicing of the semiconductor sealing member 270, and the semiconductor sealing member 270 can be implemented with excellent workability. Cutting.

<Adhesive Layer> The adhesive layer 2 has a function of adhering and supporting the semiconductor sealing bonded body 270 when the semiconductor sealing bonded body 270 is cut in the above step [4]. Further, the adhesion of the adhesive layer 2 to the semiconductor sealing member 270 is reduced by the application of energy thereto, whereby the peeling is likely to occur between the adhesive layer 2 and the semiconductor sealing body 290 in the above step [6]. State.

The adhesive layer 2 having this function is composed of a resin composition containing (1) a base resin having adhesiveness and (2) a curable resin which hardens the adhesive layer 2 as a main material.

Hereinafter, each component contained in the resin composition will be described in detail in order. (1) Base resin The base resin is adhesive, and is applied to the resin composition in order to impart adhesiveness to the semiconductor sealing member 270 to the adhesive layer 2 before the energy ray is applied to the adhesive layer 2.

Examples of such a base resin include acrylic resins (adhesives), polyoxynated resins (adhesives), polyester resins (adhesives), polyvinyl acetate resins (adhesives), and polyethylene. Base ether resin (adhesive), styrene elastomer resin (adhesive), polyisoprene resin (adhesive), polyisobutylene resin (adhesive) or urethane resin A known person who is used as an adhesive layer component (adhesive). Among these, an acrylic resin is preferably used. The acrylic resin is excellent in heat resistance and can be obtained relatively easily and inexpensively, and thus can be preferably used as a base resin.

The acrylic resin refers to a polymer (homopolymer or copolymer) having a (meth) acrylate as a monomer main component as a base polymer.

The (meth) acrylate is not particularly limited, and examples thereof include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, and isopropyl (meth) acrylate. Butyl (meth)acrylate, isobutyl (meth)acrylate, secondary butyl (meth)acrylate, tertiary butyl (meth)acrylate, amyl (meth)acrylate, (meth)acrylic acid Hexyl ester, heptyl (meth)acrylate, octyl (meth)acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, decyl (meth)acrylate, (A) Isodecyl acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, undecyl (meth) acrylate, dodecyl (meth) acrylate, (methyl) Tridecyl acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) acrylate, cetyl (meth) acrylate, heptadecyl (meth) acrylate An alkyl (meth)acrylate such as octadecyl (meth)acrylate, a cycloalkyl (meth)acrylate such as cyclohexyl (meth)acrylate, such as (methyl) Phenyl acrylate or the like Yl) acrylic acid aryl esters and the like, these can be used in one kind or in combination of two or more. Among these, at least one of methyl (meth)acrylate, butyl (meth)acrylate, and 2-ethylhexyl (meth)acrylate is used as the alkyl (meth)acrylate. good. By setting the acrylic resin containing the alkyl (meth) acrylate as a main component of the monomer, it is possible to relatively easily set the adhesive strength of the adhesive layer 2 containing the acrylic resin at 25 ° C and 80 ° C. Within the scope described later.

Further, the glass transition point of the acrylic resin is preferably 20 ° C or lower. Thereby, the adhesive layer 2 can exhibit excellent adhesiveness before the energy ray is irradiated to the adhesive layer 2.

For the purpose of setting the adhesive strength of the adhesive layer 2 at 25 ° C and 80 ° C in the range described below, and improving the cohesive force, heat resistance, etc., the acrylic resin is used in addition to the above (meth) acrylate. If necessary, a copolymerizable monomer is also contained as a monomer component constituting the polymer.

The copolymerizable monomer is not particularly limited, and examples thereof include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, and 4-hydroxybutyl (meth)acrylate. a hydroxyl group-containing monomer such as 6-hydroxyhexyl (meth)acrylate, an epoxy group-containing monomer such as glycidyl (meth)acrylate, such as (meth)acrylic acid, itaconic acid, a carboxyl group-containing monomer such as maleic acid, fumaric acid, crotonic acid or isocrotonic acid, an acid anhydride group-containing monomer such as maleic anhydride or itaconic anhydride, such as (meth) acrylamide, N,N-Dimethyl(meth)acrylamide, N-butyl(meth)acrylamide, N-methylol(meth)acrylamide, N-methylolpropane (methyl) A guanamine monomer such as acrylamide, N-methoxymethyl (meth) acrylamide or N-butoxymethyl (meth) acrylamide, such as an amine group of (meth) acrylate An amine group-containing monomer such as ethyl ester, N,N-dimethylaminoethyl (meth)acrylate, or tertiary butylaminoethyl (meth)acrylate, such as (meth)acrylonitrile a cyano group-containing monomer such as ethylene, propylene, isoprene, butadiene, or the like An olefin-based monomer such as butene, a styrene monomer such as styrene, α-methylstyrene or vinyltoluene, a vinyl ester monomer such as vinyl acetate or vinyl propionate a vinyl ether monomer such as methyl vinyl ether or ethyl vinyl ether, a halogen atom-containing monomer such as vinyl chloride or vinylidene chloride, such as a (meth)acrylic acid methoxy group. Alkoxy-containing monomer such as ethyl ester or ethoxyethyl (meth)acrylate, N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine , N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperidin, N-vinylpyrrolidine, N-vinylpyrrole, N-vinylimidazole, N-vinylcarbazole, A monomer having a ring containing a nitrogen atom, such as N-vinylmorpholine, N-vinyl caprolactam, or N-(meth)acryloyl porphyrin, can be used, or one of these may be used. Two or more types are used in combination. When at least one of methyl (meth) acrylate, butyl (meth) acrylate, or 2-ethylhexyl (meth) acrylate is contained as an alkyl (meth) acrylate, it is used as a copolymerization sheet. Among these, (meth)acrylic acid is preferred. By setting the acrylic resin containing a monomer component in combination with the alkyl (meth) acrylate and the copolymerizable monomer, the adhesive layer 2 containing the acrylic resin can be easily used at 25 ° C and 80 ° C. The adhesive force is set within the range described later.

The content of the copolymerizable monomer is preferably 40% by weight or less, and more preferably 10% by weight or less, based on all the monomer components constituting the acrylic resin.

Further, the copolymerizable monomer may be contained in the end of the main chain in the polymer constituting the acrylic resin, or may be contained in the main chain thereof, or may be contained in the end of the main chain and in the main chain. Both sides.

Further, the copolymerizable monomer may contain a polyfunctional monomer for the purpose of crosslinking the polymers and the like.

Examples of the polyfunctional monomer include 1,6-hexanediol (meth)acrylate, (poly)ethylene glycol di(meth)acrylate, and (poly)propylene glycol di(meth)acrylate. , neopentyl glycol di (meth) acrylate, neopentyl alcohol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, neopentyl alcohol tri (meth) acrylate, Dipentaerythritol hexa(meth) acrylate, glycerol di(meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, ethyl urethane (meth) acrylate The ester, divinylbenzene, butyl (meth)acrylate, hexyl (meth)acrylate, and the like can be used alone or in combination of two or more.

Further, an ethylene-vinyl acetate copolymer, a vinyl acetate polymer or the like can also be used as the copolymerizable monomer component.

Further, the acrylic resin (polymer) can be produced by polymerizing a single monomer component or a mixture of two or more monomer components. Further, the polymerization of the monomer components can be carried out, for example, by a polymerization method such as a solution polymerization method, an emulsion polymerization method, a bulk polymerization method, or a suspension polymerization method.

The acrylic resin obtained by polymerizing a monomer component as described above is an acrylic resin having a carbon-carbon double bond in a side chain, a main chain, or a terminal of a main chain (sometimes referred to as "double A key-introducing acrylic resin ".) is preferred. When the acrylic resin is a double bond-introducing acrylic resin, the obtained adhesive layer 2 can function as the adhesive layer 2 even if the addition of the curable resin to be described later is omitted.

The double bond-introducing acrylic resin is a double bond-introducing acrylic resin having one carbon-carbon double bond in a side chain of 1/100 or more in a side chain in a polymer constituting the acrylic resin ( It is also sometimes referred to as "double bond side chain introduction type acrylic resin".) It is preferable. As described above, it is also advantageous from the viewpoint of molecular design to introduce a carbon-carbon double bond into the side chain of the acrylic resin. Further, the double-bond side chain-introducing acrylic resin may have a carbon-carbon double bond in the main chain or at the end of the main chain.

The method for synthesizing the double bond-introducing acrylic resin (that is, the method of introducing a carbon-carbon double bond into the acrylic resin) is not particularly limited, and examples thereof include the following methods. First, an acrylic resin having a functional group (sometimes referred to as "functional group-containing acrylic resin") is synthesized by copolymerization using a monomer having a functional group as a copolymerizable monomer. Then, a compound having a functional group capable of reacting with a functional group in the functional group-containing acrylic resin and a carbon-carbon double bond (sometimes also referred to as a "reactive compound having a carbon-carbon double bond") is used. A condensation reaction or an addition reaction is carried out with a functional group-containing acrylic resin in a state in which energy ray hardenability (energy ray polymerizability) of a carbon-carbon double bond is maintained. Thereby, a double bond introduction type acrylic resin can be synthesized.

In addition, as a control method of introducing a carbon-carbon double bond into the side chain of 1/100 or more of the total side chain in the acrylic resin, for example, by appropriately adjusting the functional group-containing acrylic resin, A method in which a compound of a condensation reaction or an addition reaction, that is, a content of a reactive compound having a carbon-carbon double bond, is carried out.

Further, when the reactive compound containing a carbon-carbon double bond is subjected to a condensation reaction or an addition reaction with a functional group-containing acrylic resin, the above reaction can be efficiently carried out by using a catalyst. The catalyst is not particularly limited, and a tin-based catalyst such as dibutyltin dilaurate can be preferably used. The content of the tin-based catalyst is not particularly limited. For example, it is preferably 0.05 parts by weight or more and 1 part by weight or less based on 100 parts by weight of the functional group-containing acrylic resin.

Further, examples of the functional group B in the functional group A and the carbon-carbon double bond-containing reactive compound in the functional group-containing acrylic resin include a carboxyl group, an acid anhydride group, a hydroxyl group, an amine group, and an epoxy group. Isocyanate group, aziridine goup, and the like. Further, as a combination of the functional group A in the functional group-containing acrylic resin and the functional group B in the carbon-carbon double bond-containing reactive compound, for example, a combination of a carboxylic acid group (carboxyl group) and an epoxy group may be mentioned. The combination of a carboxylic acid group and a nitrogen cyclopropane group, a combination of a hydroxyl group and an isocyanate group, and a combination of a hydroxyl group and a carboxyl group, among these, a combination of a hydroxyl group and an isocyanate group is preferable. Thereby, the reaction tracking of the functional groups A and B can be easily performed.

Further, in the combination of the functional groups A and B, any functional group may be a functional group B of a functional group A or a carbon-carbon double bond-containing reactive compound of a functional group-containing acrylic resin, for example, a hydroxyl group. In the case of a combination with an isocyanate group, the hydroxyl group is a functional group A in the functional group-containing acrylic resin, and the isocyanate group is preferably a functional group B in the reactive compound containing a carbon-carbon double bond.

In this case, examples of the monomer having the functional group A constituting the functional group-containing acrylic resin include, for example, acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxy amyl acrylate, itaconic acid, and Malay. Anyone having an acid group such as acid, fumaric acid or crotonic acid, such as maleic anhydride or itaconic anhydride, such as 2-hydroxyethyl (meth)acrylate or 2-(meth)acrylic acid Hydroxypropyl ester, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, (A) Base) 12-hydroxylauryl acrylate, (4-hydroxymethylcyclohexyl)methyl (meth) acrylate, vinyl alcohol, allyl alcohol, 2-hydroxyethyl vinyl ether, 2-hydroxypropyl vinyl Ether, 4-hydroxybutyl vinyl ether, ethylene glycol monovinyl ether, diethylene glycol monovinyl ether, propylene glycol monovinyl ether, dipropylene glycol monovinyl ether or the like having a hydroxyl group, such as (A A group having an epoxy group such as glycidyl acrylate or allyl glycidyl ether.

In addition, as the reactive compound having a carbon-carbon double bond having a functional group B, examples of the isocyanate group include (meth)acryl decyl isocyanate and (meth) propylene methoxymethyl isocyanate. 2-(Methyl)acryloxyethyl isocyanate, 2-(meth)acryloxypropyl isocyanate, 3-(meth)acryloxypropyl isocyanate, 4-(meth)acrylofluorene Examples of the epoxy group include oxybutyl isocyanate and m-propenyl-α,α-dimethylbenzyl isocyanate. Examples of the epoxy group include glycidyl (meth)acrylate.

From the viewpoint of preventing contamination of the semiconductor sealing member 270 or the like when the semiconductor sealing member 270 is diced in the above step [4], it is preferable that the content of the acrylic resin-based low molecular weight is small. In this case, the weight average molecular weight of the acrylic resin is preferably set to 300,000 to 5,000,000, more preferably 500,000 to 5,000,000, and still more preferably 800,000 to 3,000,000. In addition, when the weight average molecular weight of the acrylic resin is less than 500,000 depending on the type of the monomer component or the like, the contamination resistance to the semiconductor sealing member 270 or the like is lowered. Therefore, when the semiconductor sealing body 290 (semiconductor element 26) is peeled off in the above step [6], residual adhesive may occur on the interposer 25 side of the semiconductor sealing body 290.

Further, the acrylic resin preferably has a functional group (reactive functional group) reactive with a crosslinking agent or a photopolymerization initiator such as a hydroxyl group or a carboxyl group (particularly a hydroxyl group). Thereby, since the crosslinking agent or the photopolymerization initiator is bonded to the acrylic resin as a polymer component, it is possible to reliably suppress or prevent the crosslinking agent or the photopolymerization initiator from leaking from the adhesive layer 2. As a result, the adhesion of the adhesive layer 2 to the semiconductor sealing member 270 is surely lowered by the energy ray irradiation in the above step [5].

(2) Curable resin The curable resin is, for example, a curable one that is cured by irradiation with energy rays. The base resin is incorporated into the crosslinked structure of the curable resin by the hardening thereof, and as a result, the adhesive force (adhesiveness) of the adhesive layer 2 is lowered.

As such a curable resin, for example, a low molecular weight compound having at least two or more polymerizable carbon-carbon double bonds capable of being three-dimensionally crosslinked by irradiation with energy rays such as ultraviolet rays or electron beams can be used. Specific examples thereof include trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, and tetramethylol group. Methane tetra(meth)acrylate, tetraethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, double new Pentaerythritol hexa(meth) acrylate, dipentaerythritol monohydroxy penta (meth) acrylate, 1,4-butanediol di(meth) acrylate, polyethylene glycol di(methyl) An ester of (meth)acrylic acid with a polyhydric alcohol such as acrylate or glycerol di(meth)acrylate, such as an ester acrylate oligomer, 2-propenyl-di-3-butenyl cyanurate A cyanurate compound having a group having a carbon-carbon double bond, tris(2-propenyloxyethyl)isocyanurate, or tris(2-methylpropenyloxyethyl) Cyanurate, 2-hydroxyethylbis(2-propenyloxyethyl)isocyanurate, bis(2-propenyloxyethyl)2-[(5-propenyloxyhexyl) -oxy]ethylisocyanurate, tris(1,3-dipropenyloxy-2-propyl-oxycarbonylamino)- Hexyl) isocyanurate, tris(1-propenyloxyethyl-3-methylpropenyloxy-2-propyl-oxycarbonylamino-n-hexyl)isocyanurate, three ( Isocyanurate-based compound having a carbon-carbon double bond-containing group such as 4-propenyloxy-n-butyl)isocyanurate, commercially available oligoester acrylate, aromatic system In the case of an aliphatic urethane acrylate such as an aliphatic group, one type of these may be used or two or more types may be used in combination. Among these, an oligomer having a functional group of 6 or more functional groups is preferable, and an oligomer having a functional group of 15 or more functional groups is more preferable. Thereby, the curable resin can be more reliably cured by the irradiation of the energy ray. Further, such a curable resin is urethane acrylate. Thereby, it is possible to impart appropriate flexibility to the adhesive layer 2, so that an effect of suppressing cracking of the rubber during picking up can be obtained.

In addition, the urethane acrylate is not particularly limited, and examples thereof include a (meth) acrylate having a hydroxyl group (for example, 2-hydroxyethyl (meth) acrylate or (meth) acrylate 2 - hydroxyethyl ester, polyethylene glycol (meth) acrylate, etc.) is obtained by reacting with a terminal isocyanate urethane prepolymer, and the terminal isocyanate urethane prepolymer is a polyester type. Or a polyol compound such as a polyether type and a polyvalent isocyanate compound (for example, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1,3-xylylene diisocyanate, 1,4-extended xylylene diisocyanate) And diphenylmethane 4,4-diisocyanate, etc.) are obtained by carrying out a reaction.

In addition, the curable resin is not particularly limited, and it is preferred to mix two or more kinds of curable resins having different weight average molecular weights. When the curable resin is used, the degree of crosslinking of the resin by the energy ray irradiation can be easily controlled, and the adhesive tape 100 having improved pick-up property of the semiconductor sealing body 290 (semiconductor element 26) in the above step [6] can be provided. . In addition, as the curable resin, for example, a mixture of a first curable resin and a second curable resin having a weight average molecular weight larger than that of the first curable resin may be used.

When the curable resin is a mixture of the first curable resin and the second curable resin, the weight average molecular weight of the first curable resin is preferably about 100 to 1,000, more preferably about 200 to 500. Further, the weight average molecular weight of the second curable resin is preferably from about 1,000 to 30,000, more preferably from about 1,000 to 10,000, still more preferably from about 2,000 to 5,000. Further, the number of functional groups of the first curable resin is preferably 1 to 5 functional groups, and the number of functional groups of the second curable resin is preferably 6 or more. By satisfying this relationship, the aforementioned effects can be exhibited more remarkably.

The curable resin is preferably blended in an amount of 5 parts by weight or more and 500 parts by weight or less based on 100 parts by weight of the base resin, more preferably 10 parts by weight or more and 300 parts by weight or less, more preferably 20 parts by weight or more and 200 parts by weight or more. The following blending is further preferred. By adjusting the blending amount of the curable resin as described above, the adhesive tape 100 excellent in the pick-up property of the semiconductor sealing body 290 (semiconductor element 26) in the above step [6] can be provided.

In addition, when a double bond-introducing acrylic resin is used as the acrylic resin, that is, when a carbon-carbon double bond is used in a side chain, a main chain, or a terminal of a main chain, the addition of the resin composition may be omitted. This curable resin. When the acrylic resin is a double bond-introducing acrylic resin, the adhesive layer 2 is cured by the function of a carbon-carbon double bond of the double bond-introducing acrylic resin by irradiation with energy rays. The adhesion of the adhesive layer 2 is lowered.

(3) Photopolymerization initiator The adhesion layer 2 is reduced in adhesion to the semiconductor sealing member 270 by irradiation with an energy ray. When ultraviolet rays or the like is used as an energy ray, in order to cause polymerization of the curable resin It is easy to obtain a photopolymerization initiator in the curable resin.

The photopolymerization initiator may, for example, be 2,2-dimethoxy-1,2-diphenylethan-1-one or 1-[4-(2-hydroxyethoxy)-phenyl] 2-hydroxy-2-methyl-1-propan-1-one, 2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl-propenyl)-benzyl]phenyl }-2-Methyl-propan-1-one, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, 4-(2-hydroxyethoxy)phenyl (2-hydroxy-2-propane) Ketone, α-hydroxy-α,α ́-dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, 1-hydroxycyclohexyl phenyl ketone, Michelin, acetophenone, A Oxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio) -Phenyl]-2-oxalinylpropan-1-one, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, benzoin isopropyl ether, benzoin isobutyl ether, diphenyl Benzil, benzoin, dibenzyl, α-hydroxycyclohexyl phenyl ketone, benzyl dimethyl ketal, 2-hydroxymethyl phenylpropane, 2-naphthalene sulfonium chloride, 1-benzophenone-1,1-propanedione-2-(o-ethoxycarbonyl)anthracene, benzophenone, benzamidine benzoic acid, 4,4'-dimethylaminobenzophenone, 4,4'-two Aminobenzophenone, 4,4'-dichlorobenzophenone, 3,3'-dimethyl-4-methoxybenzophenone, o-propylene oxy benzophenone, pair Propylene oxy benzophenone, o-methacryloxy benzophenone, p- methacryloxy benzophenone, p-(meth) propylene methoxy ethoxy benzophenone , acrylate such as 1,4-butanediol mono(meth)acrylate, 1,2-ethanediol mono(meth)acrylate, 1,8-octanediol mono(meth)acrylate Benzophenone-4-carboxylate, thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2 , 4-dichlorothioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone, azobisisobutyronitrile, β-chloropurine, camphorquinone, halogenated ketone , mercapto phosphine oxide, decyl phosphonate, polyvinyl benzophenone, chlorothioxanthone, dodecyl thioxanthone, dimethyl thioxanthone, diethyl thioxanthone, 2-B One type of these may be used, or two or more types may be used in combination, such as a sulfonium group, a tributyl sulfonium group, a 2,4,5-triaryl imidazole dimer.

Further, among these, a benzophenone derivative and an alkylphenone derivative are preferred. These compounds are those having a hydroxyl group as a reactive functional group in the molecule, and can be bonded to a base resin or a curable resin via the reactive functional group, and can function as a photopolymerization initiator more reliably.

The photopolymerization initiator is preferably blended in an amount of 0.1 part by weight or more and 50 parts by weight or less based on 100 parts by weight of the base resin, more preferably 0.5 part by weight or more and 10 parts by weight or less. By adjusting the blending amount of the photopolymerization initiator as described above, the pickup property of the adhesive tape 100 becomes preferable.

(4) Crosslinking agent Further, a crosslinking agent may be contained in the curable resin. The curability of the curable resin can be improved by containing a crosslinking agent.

The crosslinking agent is not particularly limited, and examples thereof include an isocyanate crosslinking agent, an epoxy crosslinking agent, a urea resin crosslinking agent, a methylol crosslinking agent, a chelate crosslinking agent, and nitrogen. A cyclopropane crosslinking agent, a melamine crosslinking agent, a polyvalent metal chelate crosslinking agent, an acid anhydride crosslinking agent, a polyamine crosslinking agent, a carboxyl group-containing polymer crosslinking agent, and the like. Among these, an isocyanate type crosslinking agent is preferable.

The isocyanate crosslinking agent is not particularly limited, and examples thereof include a polyisocyanate compound of a polyvalent isocyanate and a trimer of a polyisocyanate compound, and a trimer of a terminal isocyanate compound obtained by reacting a polyisocyanate compound and a polyol compound. Alternatively, the terminal isocyanate urethane prepolymer is blocked by a phenol, a hydrazine or the like to block a polyisocyanate compound.

Further, examples of the polyvalent isocyanate include 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1,3-extended xylylene diisocyanate, 1,4-extended xylylene diisocyanate, and diphenylmethane. -4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexyl Methane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, 4,4'-diphenyl ether diisocyanate, 4,4'-[2,2-bis(4-benzene For the oxyphenyl)propane]diisocyanate, the 2,2,4-trimethyl-hexamethylene diisocyanate, or the like, one type of these may be used, or two or more types may be used in combination. Among these, at least one polyvalent isocyanate selected from the group consisting of 2,4-toluene diisocyanate, diphenylmethane-4,4'-diisocyanate and hexamethylene diisocyanate is preferred.

The crosslinking agent is preferably blended in an amount of 0.01 part by weight or more and 50 parts by weight or less based on 100 parts by weight of the base resin, more preferably 5 parts by weight or more and 50 parts by weight or less. By adjusting the blending amount of the crosslinking agent as described above, the pick-up property of the adhesive tape 100 becomes preferable.

(5) Other components In addition to the above components (1) to (4), the resin composition constituting the adhesive layer 2 may contain a tackifier, an anti-aging agent, an adhesion adjuster, a filler, a colorant, and a resist. At least one of a fuel, a softener, an antioxidant, a plasticizer, a surfactant, and the like is used as another component.

In addition, the tackifier in the above is not particularly limited, and examples thereof include a rosin resin, a terpene resin, a courmaron resin, a phenolic resin, an aliphatic petroleum resin, and an aromatic system. One type of these may be used, or two or more types may be used in combination, for example, a petroleum resin, an aliphatic aromatic copolymerization petroleum resin, or the like.

Further, the adhesive layer 2 has an adhesive force of 50 kPa or more and less than 500 kPa at 25 ° C, 20 kPa or more and less than 300 kPa at 80 ° C, and 200 kPa or more and less than 500 kPa at 25 ° C, and It is more preferable that the 80 ° C is 20 kPa or more and less than 150 kPa.

Here, when the adhesive force of the adhesive layer 2 at 25 ° C is less than the above lower limit value, the adhesive tape 100 is laminated (attached) to the semiconductor sealing joint in the above step [3] according to the constituent material of the adhesive layer 2 . At 270, bubbles are generated between the adhesive layer 2 and the sheet 25'. Therefore, the fixing of the semiconductor sealing joint 270 based on the adhesive tape 100 becomes unstable, and the cutting of the semiconductor sealing joint 270 in the above step [4] or the pickup precision of the semiconductor sealing body 290 in the aforementioned step [6] is May fall. As a result, the yield of the semiconductor device 20 obtained by the semiconductor sealing body 290 is lowered.

When the adhesive force of the adhesive layer 2 at 25 ° C exceeds the above upper limit, the adhesive tape 100 is laminated (attached) to the semiconductor sealing joint in the above step [3] depending on the constituent material of the adhesive layer 2 . At 270, the adhesive layer 2 is excessively applied to the sheet 25'. Therefore, the adhesion of the adhesive layer 2 to the sheet 25' (anchor) may tend to become too strong. Therefore, in the above step [5], even if the adhesion to the adhesive layer 2 of the semiconductor sealing body 290 (the interposer 25 obtained from the sheet 25') is lowered by applying energy to the adhesive layer 2, it is impossible to The adhesion is sufficiently lowered, and the pick-up rate of the semiconductor sealing body 290 in the above step [6] may be lowered. Moreover, if the adhesion of the adhesive layer 2 becomes excessive, when the laser mark or bump is formed on the sheet 25', the adhesive layer 2 enters into the above, and the semiconductor seal in the above step [6] When the body 290 is picked up, it may cause a residual glue.

Further, when the adhesive force of the adhesive layer 2 at 80 ° C is less than the above lower limit, the semiconductor sealing member 270 is cut by the dicing blade in the above step [4] according to the constituent material of the adhesive layer 2 The adhesion of the dicing blade to the semiconductor sealing member 270 and the adhesion layer 2 are heated, and the fixing of the semiconductor sealing member 270 based on the adhesive tape 100 may become unstable due to the heating. Therefore, at the time of the cutting, the back surface of the semiconductor sealing body 290 may be contaminated by the cutting water, or the semiconductor sealing body 290 may fly. As a result, the yield of the semiconductor device 20 obtained by the semiconductor sealing body 290 is lowered.

Further, when the adhesive force of the adhesive layer 2 at 80 ° C exceeds the above upper limit, depending on the constituent material of the adhesive layer 2, when the semiconductor sealing member 270 is cut by the dicing blade in the above step [4], The adhesive layer 2 is heated by the friction of the cutting blade and the semiconductor sealing joint 270. However, due to this heating, the adhesive force (adhesion) is also excessively increased. Therefore, clogging of the dicing blade occurs during dicing of the semiconductor sealing member 270, which may cause occurrence of residual glue or burrs of the adhesive layer 2.

On the other hand, the adhesion strength at 25 ° C and 80 ° C is within the above range, and in the above step [4] (cutting step), the semiconductor sealing member 270 can be firmly fixed, and by the foregoing In the step [5], the adhesive layer 2 is energized, and the adhesion of the adhesive layer 2 to the semiconductor sealing body 290 obtained by the dicing of the semiconductor sealing member 270 can be appropriately lowered, so that it can be easily performed in the above step [6]. The semiconductor sealing body 290 is picked up. As a result, the yield of the semiconductor device 20 obtained by the semiconductor package 290 can be improved.

Further, the measurement of the adhesive force of the adhesive layer 2 is carried out by JIS Z 0237, for example, by the adhesion tester TAC-II of RHESCA CO., LTD., and using the probe to be pressed into the setting. The pressure value was kept constant until the pressure was maintained until the set time elapsed, and the adhesive layer 2 of the adhesive tape 100 was faced upward, and the probe of SUS304 having a diameter of 3.0 mm was brought into contact with the upper side. At this time, the speed at which the probe was brought into contact with the measurement sample was 30 mm/min, the contact load was set to 100 gf, and the contact time was set to 1 second. Then, the probe was peeled off at a peeling speed of 600 mm/min, and the force required for peeling was measured as the adhesive force. Further, the adhesion at 25 ° C was measured by setting the probe temperature to 25 ° C and the sheet temperature to 25 ° C, and the adhesion at 80 ° C was set by setting the probe temperature to 80 ° C and The measurement was carried out by setting the plate temperature to 80 °C.

Further, when the adhesive force of the expanded layer 42 at 80 ° C is A [kPa] and the adhesive force of the adhesive layer 2 at 80 ° C is B [kPa], A/B satisfies 0.003 or more and 15 or less. The relationship is preferably such that a relationship of 0.003 or more and 10 or less is more preferable. Thereby, when the semiconductor sealing joint 270 is cut by the dicing blade in the above step [4], the adhesive layer 2 can be made based on the adhesive tape 100 even if the adhesive layer 2 is heated by the friction between the dicing blade and the semiconductor sealing joint 270. The fixing of the semiconductor sealing joint 270 is firm, and at the same time, it is possible to surely suppress or prevent the expansion layer 42 from softening/melting to reliably suppress or prevent the expansion layer 42 from being welded to the cutter table.

Further, the thickness of the adhesive layer 2 is not particularly limited, and is preferably 1 μm or more and 30 μm or less, more preferably 5 μm or more and 30 μm or less, and further preferably 10 μm or more and 20 μm or less. By setting the thickness of the adhesive layer 2 within this range, the adhesive layer 2 exerts a good adhesive force before imparting energy to the adhesive layer 2, and after the energy is applied to the adhesive layer 2, the adhesive layer 2 and the semiconductor sealing joint are bonded. Good peelability between 270. Further, when the thickness of the adhesive layer 2 is within this range, the total light transmittance of the substrate 4 under the D65 standard light source is 85% or more and 98% or less, whereby the adhesive tape 100 can be reliably provided. Translucent.

Further, the adhesive layer 2 may be composed of a laminate (multilayer body) in which a plurality of layers composed of different resin compositions are laminated.

Next, the adhesive tape 100 for semiconductor substrate processing of this structure can be manufactured, for example, as follows.

<Method of Manufacturing Adhesive Tape for Processing Semiconductor Substrate> Fig. 6 is a longitudinal cross-sectional view for explaining a method of manufacturing the adhesive tape for processing a semiconductor substrate shown in Fig. 4 . In the following description, the upper side in FIG. 6 is referred to as "upper" and the lower side is referred to as "lower".

[1B] First, the substrate 4 in which the cut-in layer 41 and the expanded layer 42 are laminated in this order is prepared (see FIG. 6(a)).

The base material 4 of this constitution is not particularly limited, and for example, an extrusion molding method such as an expansion coextrusion method, a T-die co-extrusion method, or a calendering method, an expansion extrusion method, or a T-die extrusion method can be used. It is produced by a general molding method such as an extrusion molding method such as an annular die extrusion method or a lamination method of a film obtained by a wet casting method. Among these, the T-die coextrusion method is preferred. Thereby, each layer provided in the adhesive tape 100 can be formed with excellent thickness precision.

Hereinafter, a T-die coextrusion method (extrusion method using a T-die) will be described. First, the resin components constituting the cut-in layer 41 and the expanded layer 42 are individually dry-blended or melt-kneaded, whereby a resin composition for forming each of the layers 41 and 42 is obtained. In addition, the resin composition for forming each of the layers 41 and 42 is supplied to a screw extruder, and is extruded from a multilayer T-die adjusted to 180 to 240° C., and then adjusted to 10 to 50° C. The cooling roll was cooled and wound up, whereby the substrate 4 was obtained. Alternatively, the resin composition for forming the respective layers 41 and 42 may be temporarily obtained in the form of particles, and then extrusion molding may be carried out as described above to obtain the substrate 4. The thickness of each of the formed layers 41, 42 can be adjusted by adjusting the screw speed of the extruder.

Further, in the step of cooling and winding the film while passing through the cooling roll, it is preferable to perform the winding in a substantially unstretched manner while ensuring the strength of the film at the time of expansion without being broken. Thereby, the light transmittance of the base material 4 can be made excellent. Further, substantially no stretching means that the stretching is not performed actively, and includes a slight stretching which does not cause stretching or the degree of warpage of the substrate 4 at the time of cutting. Usually, when the film is taken up, stretching at a degree of slack does not occur.

Further, when the cut-in layer 41 is produced by lamination, the cut-in layer 41 can be used in an unstretched state, and if necessary, a uniaxial or biaxial stretching process can also be used. Further, for the purpose of improving the adhesion between the cut-in layer 41 and the expanded layer 42, the surface (lower surface) of the cut-in layer 41 may be subjected to corona treatment, chromic acid treatment, matting treatment, ozone exposure treatment, flame exposure treatment, Surface treatment such as high piezoelectric shock exposure treatment, ionizing radiation treatment, primer treatment, and anchor coat treatment.

Further, when the expansion layer 42 is produced by lamination, the expansion layer 42 can be cooled by thermal lamination of the resin composition as a constituent material of the expansion layer 42 on the cut-in layer 41 to form an expansion layer. 42 get it.

[2B] Next, an adhesive layer 2 is formed on the upper surface of the obtained substrate 4 (cut layer 41) (see FIG. 6(b)).

For the purpose of improving the adhesion between the substrate 4 and the adhesive layer 2, the surface (upper surface) of the substrate 4 may be subjected to corona treatment, chromic acid treatment, matting treatment, ozone exposure treatment, flame exposure treatment, high voltage electric shock exposure. Surface treatment such as treatment, ionizing radiation treatment, primer treatment, and adhesion coating treatment.

Further, the adhesive layer 2 can be formed by dissolving or dispersing a resin composition as a constituent material of the adhesive layer 2 in a solvent to form a varnish-like liquid material on the substrate 4, and then volatilizing the solvent to form an adhesive layer 2 And get it.

In addition, the solvent is not particularly limited, and examples thereof include methyl ethyl ketone, acetone, toluene, ethyl acetate, and dimethyl formaldehyde. These may be used alone or in combination of two or more.

Moreover, the coating or dispersion of the liquid material onto the substrate 4 can be, for example, a die coating, a curtain die, a gravure coating, a comma coat, a bar coating, and a lip coating. Cloth and other methods to carry out.

[3B] Next, the adhesive layer 2 formed on the base material 4 is separated from the center side and the outer peripheral side so that the base material 4 remains in the thickness direction of the adhesive layer 2, and a part of the adhesive layer 2 is removed in an annular shape. Thereby, the adhesive layer 2 is provided with the center part 122 and the outer peripheral part 121 (refer FIG. 6 (c).).

As a method of removing a part of the adhesive layer 2 in a ring shape, for example, a method of removing the adhesive layer 2 located in the punched region after punching the region to be removed may be mentioned.

Further, the punching of the region corresponding to the removal can be performed, for example, by a method using a roll mold or a method using a press mold. Among them, a method of continuously producing a roll-shaped mold of the adhesive tape 100 is preferable.

Further, in this step, a part of the adhesive layer 2 is punched into an annular shape (circular shape) to form the central portion 122 and the outer peripheral portion 121, but a part of the adhesive layer 2 is punched into a shape as long as it is attached to the semiconductor device. In the manufacturing method, the shape of the center portion 122 of the adhesive layer 2 can be fixed by the wafer ring, and any shape can be used. Specifically, the shape of the punching is, for example, an elliptical shape such as an elliptical shape or a straw shape, or a polygonal shape such as a quadrangular shape or a pentagonal shape, in addition to the above-described circular shape.

[4B] Next, the separator 1 is laminated on the adhesive layer 2 formed on the substrate 4, whereby the adhesive tape 100 in which the adhesive layer 2 is covered with the separator 1 is obtained (see Fig. 6(d)).

The method of laminating the separator 1 on the adhesive layer 2 is not particularly limited, and for example, a lamination method using a roll or a lamination method using pressing can be used. Among these, a lamination method using a roll is preferable from the viewpoint of productivity capable of continuous production.

Further, the separator 1 is not particularly limited, and examples thereof include a polypropylene film, a polyethylene film, and a polyethylene terephthalate film.

Further, since the spacer 1 is peeled off when the adhesive tape 100 is used, it is possible to use a mold for surface release treatment. Examples of the mold release treatment include a treatment of applying a release agent to the surface of the separator 1 or a process of forming fine irregularities on the surface of the separator 1. Further, examples of the release agent include polyfluorene-based, alkyd-based, and fluorine-based.

Through the above steps, the adhesive tape 100 covered by the spacer 1 can be formed.

Further, the adhesive tape 100 covered by the separator 1 manufactured in the present embodiment is used after the adhesive tape 100 is peeled off from the separator 1 in the method of manufacturing a semiconductor device using the above-described adhesive tape 100.

Further, when the separator 1 is peeled off from the adhesive layer 2 covered by the separator 1, it is preferable to peel the separator 1 at an angle of 90 degrees or more and 180 degrees or less with respect to the surface of the adhesive layer 2. By setting the angle of the peeling spacer 1 within the above range, peeling of the adhesive layer 2 and the separator 1 beyond the interface can be reliably prevented.

In the present embodiment, the case where the semiconductor device 20 is applied to a four-sided flat package (QFP) and the semiconductor device 20 having the above configuration is manufactured using the adhesive tape 100 has been described. However, the present invention is not limited to this and can be used in various forms. The adhesive tape 100 is applied to the manufacture of a semiconductor package, and can be applied, for example, to a DIP (Dual In-line Package), a leaded plastic wafer carrier (PLCC: Plastic Leaded Chip Carrier), and a thin four-sided flat package. (LQFP: Low-profile Quad Flat Package), Small Out-Line Package (SOP), Small Out-Line J-Lead Package (SOJ), Thin Small Outline Package (TSOP: Thin Small Outline Package), Thin Quad Flat Package (TQFP), Tape Carrier Package (TCP), Ball Grid Array (BGA), Chip Size Package (CSP: Chip Scale Package) ), memory or logic components such as MAPBGA: Matrix Array Package Ball Grid Array, wafer stack wafer size package.

Although the adhesive tape for processing a semiconductor substrate of the present invention has been described above, the present invention is not limited to these.

For example, in each layer of the adhesive tape for processing a semiconductor substrate of the present invention, any component capable of exhibiting the same function may be added, or a plurality of layers of the cut-in layer 41 and the expanded layer 42 in the substrate may be laminated.

Further, the configuration of each layer included in the adhesive tape for processing a semiconductor substrate of the present invention can be replaced with any one that can perform the same function, or a layer having an arbitrary configuration such as an antistatic layer or the like can be added.

In the above-described embodiment, the semiconductor sealing member (semiconductor substrate) is fixed by the adhesive tape for processing a semiconductor substrate of the present invention, and the semiconductor sealing body obtained as an object by cutting the semiconductor sealing member is used. Although the case where the semiconductor substrate processing adhesive tape is picked up has been described, the present invention is not limited thereto, and a semiconductor wafer (semiconductor substrate) on which a plurality of semiconductor elements are formed can be fixed and the semiconductor wafer can be mounted thereon. The semiconductor element obtained as the object to be cut is picked up from the adhesive tape for processing the semiconductor substrate. [Examples]

Next, specific embodiments of the present invention will be described. Further, the present invention is not limited by the description of the embodiments.

1. Study on the adhesion of the expanded layer 1-1. Preparation of raw materials First, the raw materials used in the production of the base film for dicing films of the examples and the comparative examples were as follows.

<Material of Substrate 4> Ionic polymer resin "Himilan 1855" (manufactured by DU PONT-MITSUI POLYCHEMICALS CO., LTD.; metal atom Zn, MFR 1.0 melting point 86 ° C) Low density polyethylene LDPE "F222" (Ube- Manufactured by Maruzen Polyethlene Co, Ltd.; melting point 110 ° C) Low density polyethylene LDPE "Petrosen 203" (manufactured by TOSOH CORPORATION; melting point 100 to 120 ° C) Low density polyethylene LDPE "1520F" (manufactured by Ube-Maruzen Polyethlene Co, Ltd. ; melting point 114 ° C) high density polyethylene HDPE "Novatec HD HF560" (manufactured by Japan Polyethylene Corporation; melting point 134 ° C) antistatic agent "Pelestat PVH" (manufactured by Sanyo Chemical Industries, Ltd.; polyether / polyolefin block polymer Antistatic agent "Pelestat 230" (manufactured by Sanyo Chemical Industries, Ltd.; polyether/polyolefin block polymer) Antistatic agent "Electrostripper TS-13B" (manufactured by Kao Corporation; nonionic surfactant)

<Materials of Adhesive Layer 2> The following raw materials were used for the adhesive layers of the respective Examples and Comparative Examples.

<Base Resin> The following acrylic copolymer was obtained by mixing butyl acrylate (BA) and acrylic acid (AA) in the following weight ratio and solution-polymerizing it in a toluene solvent by a conventional method. Acrylic copolymer 1 (BA/AA=90/10, weight average molecular weight 600,000)

<UV hardening resin> Amino acrylate acrylate 1 (Shin-Nakamura Chemical Co., Ltd., trade name: UA-33H): 20 parts by weight

<Crosslinking agent> Polyisocyanate compound (trade name "Coronate L", manufactured by Nippon Polyurethane Industry Co., Ltd.)

<Photoinitiator> A benzophenone-based photoinitiator (trade name "IRGACURE 651", manufactured by Ciba Specialty Chemicals Corporation)

1-2. Preparation of Adhesive Tape for Processing of Semiconductor Substrate (Example 1A) <Preparation of Substrate 4 (Substrate Film for Cleaved Film)> As the resin for forming the cut layer, an ionic polymer resin "Himilan 1855" was used.

Further, 80% by mass of low-density polyethylene LDPE "F222NH" and 20% by mass of an antistatic agent "Pelestat 212" were blended in a dry manner to obtain a resin composition for forming an expanded layer.

In addition, the resin composition for forming a cut layer and the resin composition for forming an expanded layer were supplied to each extruder adjusted to 200 ° C, and the pattern of the cut layer/expansion layer was changed from a two-layer mold at 200 ° C. The film was extruded and cooled by a cooling roll set at 20 ° C, and wound up in a substantially unstretched state, whereby a substrate 4 having a two-layer structure (base film for a dicing film) was obtained.

Further, the thickness of the cut-in layer 41 in the obtained base material 4 was 100 μm, the thickness of the expanded layer 42 was 50 μm, and the thickness of the entire base material 4 was 150 μm.

<Production of Adhesive Tape 100 (Cut Film)> The adhesive tape 100 was obtained by providing the adhesive layer 2 on the cut layer 41 of the substrate 4 produced as described above. Specifically, 49.8 wt% of the base resin as a raw material of the adhesive layer 2, 39.8% by mass of the UV curable resin, 6.5% by mass of the crosslinking agent, and 3.9% by mass of the photoinitiator were used, and this was dissolved in ethyl acetate and carried out. Mixing to obtain a mixture. Then, the mixture was bar-coated on the cut-in layer of the substrate 4 so that the thickness after drying became 20 μm, and then dried at 80 ° C for 10 minutes, whereby the adhesive tape 100 of Example 1A was obtained.

(Examples 2A to 10A, Comparative Example 1A) Examples 2A to 10A and Comparative Example 1A were produced in the same manner as in Example 1A except that the types of the materials and the blending ratio thereof were changed as described in Table 1. The substrate 4 and the adhesive tape 100.

1-3. Evaluation <Adhesive strength A of the expanded layer at 80 ° C> The adhesive force A of the expanded layer at 80 ° C was evaluated in the following manner.

That is, first, for the adhesive tapes 100 of Examples 1A to 10A and Comparative Example 1A, the adhesion tester TAC-I of RHESCA CO., LTD. was used in accordance with JIS Z 0237, with the expansion layer facing upward, from the upper side. A probe made of SUS304 having a diameter of 3.0 mm was brought into contact, and the speed at which the probe was brought into contact with the expanded layer at this time was 30 mm/min, the contact load was 200 gf, the contact time was set to 10 seconds, and the probe temperature was set. The plate temperature was set to 80 °C. Then, the probe was peeled off at a peeling speed of 600 mm/min, and the force required for peeling was measured as the adhesive force. Further, according to the obtained adhesive force, the adhesion at 80 ° C was evaluated based on the evaluation criteria shown below. The evaluation results are shown in Table 1.

[Evaluation Criteria] The adhesive force is 1 kPa or more and 60 kPa or less: A adhesive force is 60 kPa or more and 200 kPa or less: B adhesive force is less than 1 kPa or more than 200 kPa: C

<Adhesion B of Adhesive Layer at 80 ° C> The adhesive force B of the adhesive layer at 80 ° C was evaluated in the following manner.

That is, first, for the adhesive tapes 100 of Examples 1B to 5B, the adhesive tester TAC-II of RHESCA CO., LTD. was used in accordance with JIS Z 0237, with the adhesive layer facing upward and the diameter 5.0 mm from the upper side. The contact of the probe made of SUS304 was set to 30 mm/min when the probe was brought into contact with the adhesive layer, the contact load was set to 200 gf, the contact time was set to 10 seconds, and the probe temperature and the plate temperature were set. It is 80 °C. Then, the probe was peeled off at a peeling speed of 600 mm/min, and the force required for peeling was measured as the adhesive force. Further, according to the obtained adhesive force, the adhesion at 80 ° C was evaluated based on the evaluation criteria shown below. The evaluation results are shown in Table 2.

[Evaluation Criteria] The adhesive force is 20 kPa or more and less than 150 kPa: A The adhesive force is 150 kPa or more and less than 300 kPa: B The adhesive force is less than 20 kPa or more than 300 kPa: C

<A/B> The ratio A/B of the adhesive force A of the expanded layer at 80 ° C to the adhesive force B of the adhesive layer at 80 ° C was evaluated based on the evaluation criteria shown below.

[Evaluation Criteria] The ratio A/B is 0.003 or more and less than 10:A ratio A/B is 10 or more and less than 15:B ratio A/B is less than 0.003 or 15 or more: C

<Splicing Characteristics> The welding characteristics were evaluated in the following manner.

In other words, first, a glass epoxy dummy substrate (sealing material: G760L, manufactured by Sumitomo Bakelite Co., Ltd.) was attached to the adhesive tape 100 of Examples 1A to 10A and Comparative Example 1A (60 mm× 15 mm × 1.2 mm thick), cutting was performed on a cutter table under the following conditions, and the degree of fusion of the expanded layer after cutting to the cutter table was visually observed, and the welding characteristics were evaluated based on the evaluation criteria shown below. The evaluation results are shown in Table 1.

[Evaluation Criteria] No melting of the expanded layer was observed, and welding to the cutter table was not observed: A slight melting of the expanded layer was observed, and a slight weld was observed for the cutter table: B was clearly observed Melting of the expansion layer, obvious welds were observed for the cutter table: C

[Cutting conditions] Cutting device: "DAD-3350" (trade name, manufactured by DISCO Corporation) Cutting blade: "P08-SDC220" (trade name, manufactured by DISCO Corporation) Blade rotation speed: 30000 rpm Cutting speed: 100 mm/sec Cutting: cutting from The surface of the film is 100 μm (cutting amount for the cut-in layer is 80 μm). Cutting size: 10 mm × 10 mm Blade cooler: 2 L/min

【Table 1】

As shown in Table 1, in the adhesive tape 100 of Examples 1A to 10A, the adhesive strength of the expanded layer 42 was obtained at 80 ° C of 1 kPa or more and 200 kPa or less. Thereby, even in the cutting step, even if it is heated by the friction with the dicing saw, the welding of the expansion layer 42 to the cutter table can be surely suppressed.

2. Study of Adhesive Strength of Adhesive Layer 2-1. Preparation of Raw Materials First, the raw materials used in the production of the base film for dicing film of the examples and the reference examples are as follows.

<Material of Substrate 4> Ionic polymer resin "Himilan 1855" (manufactured by DU PONT-MITSUI POLYCHEMICALS CO., LTD.; metal atom Zn, MFR 1.0 melting point 86 ° C) Low density polyethylene LDPE "F222" (Ube- Maruzen Polyethlene Co, Ltd.; melting point 110 ° C) Antistatic agent "Pelestat 212" (manufactured by Sanyo Chemical Industries, Ltd.; polyether / polyolefin block polymer)

<Materials of Adhesive Layer 2> The following raw materials were used for the adhesive layers of the respective examples and the respective reference examples.

<Base Resin> The acrylic copolymers 1 to 5 are each mixed with at least two of butyl acrylate (BA), acrylic acid (AA), methyl methacrylate (MA), and 2-ethylhexyl acrylate (2EHA). It is obtained by solution polymerization in a toluene solvent by a conventional method. Further, the acrylic copolymers 6 and 7 respectively do not contain acrylic acid (AA) and are mixed with two of butyl acrylate (BA), methyl methacrylate (MA) and 2-ethylhexyl acrylate (2EHA). It is obtained by solution polymerization of a solution in a toluene solvent by a conventional method.

Further, the mixing ratios of at least two kinds of MA, BA, 2EHA, and AA mixed in the acrylic copolymers 1 to 5 are as follows. Further, the mixing ratios of MA, BA, and 2EHA in which two types of the acrylic copolymers 6 and 7 are mixed are as follows.

Acrylic Copolymer 1 (BA/AA=90/10) Acrylic Copolymer 2 (BA/AA=95/5) Acrylic Copolymer 3 (MA/BA/2EHA/AA=15/45/35/5) Acrylic Copolymer 4(MA/2EHA/AA=10/85/5) Acrylic Copolymer 5 (MA/2EHA/AA=12/85/3) Acrylic Copolymer 6 (MA/2EHA=15/85) Acrylic Copolymer 7 (BA /2EHA=20/80)

<UV hardening resin> Amino acrylate acrylate 1 (Shin-Nakamura Chemical Co., Ltd., trade name: UA-33H): 20 parts by weight

<Crosslinking agent> Polyisocyanate compound (trade name "Coronate L", manufactured by Nippon Polyurethane Industry Co., Ltd.)

<Photoinitiator> A benzophenone-based photoinitiator (trade name "IRGACURE 651", manufactured by Ciba Specialty Chemicals Corporation)

2-2. Preparation of Adhesive Tape for Processing of Semiconductor Substrate (Example 1B) <Preparation of Substrate 4 (Substrate Film for Cleaved Film)> As the resin for forming the cut layer, an ionic polymer resin "Himilan 1855" was used.

Further, 80.0% by mass of the low-density polyethylene LDPE "F222" and 20.0% by mass of the antistatic agent "Pelestat 212" were blended in a dry blend to obtain a resin composition for forming an expanded layer.

In addition, the resin composition for forming a cut layer and the resin composition for forming an expanded layer were supplied to each extruder adjusted to 200 ° C, and the pattern of the cut layer/expansion layer was changed from a two-layer mold at 200 ° C. The film was extruded and cooled by a cooling roll set at 20 ° C, and wound up in a substantially unstretched state, whereby a substrate 4 having a two-layer structure (base film for a dicing film) was obtained.

Further, the thickness of the cut-in layer 41 in the obtained base material 4 was 100 μm, the thickness of the expanded layer 42 was 50 μm, and the thickness of the entire base material 4 was 150 μm.

<Production of Adhesive Tape 100 (Cut Film)> The adhesive tape 100 was obtained by providing the adhesive layer 2 on the cut layer 41 of the substrate 4 produced as described above. Specifically, 49.88% by mass of the base resin (acrylic copolymer 1) as a raw material of the adhesive layer 2, 39.8% by mass of a UV curable resin, 6.5% by mass of a crosslinking agent, and 3.9% by mass of a photoinitiator are used, and dissolved in The mixture was mixed with ethyl acetate to obtain a mixture. Then, the mixture was applied to the cut layer of the substrate 4 so as to have a thickness of 20 μm after drying, and then dried at 80 ° C for 10 minutes, whereby the adhesive tape 100 of Example 1B was obtained.

(Examples 2B to 5B, Reference Examples 1B and 2B) Examples 2B to 5B were produced in the same manner as in Example 1B except that the types of the base resins contained as the materials were changed as described in Table 2, The substrate 4 and the adhesive tape 100 of Examples 1B and 2B.

2-3. Evaluation <Adhesion at 25 ° C> The adhesion of the adhesive layer at 25 ° C was evaluated in the following manner.

That is, first, for the adhesive tapes 100 of Examples 1B to 5B and Reference Examples 1B and 2B, the adhesive tester TAC-II of RHESCA CO., LTD. was used in accordance with JIS Z 0237, with the adhesive layer facing up, A probe made of SUS304 having a diameter of 5.0 mm was brought into contact with the probe from the upper side, and the speed at which the probe was brought into contact with the adhesive layer at this time was 30 mm/min, the contact load was set to 200 gf, and the contact time was set to 10 seconds. The needle temperature and plate temperature were set to 25 °C. Then, the probe was peeled off at a peeling speed of 600 mm/min, and the force required for peeling was measured as the adhesive force. Further, according to the obtained adhesive force, the adhesion at 25 ° C was evaluated based on the evaluation criteria shown below. The evaluation results are shown in Table 2.

[Evaluation Criteria] The adhesive force is 200 kPa or more and less than 500 kPa: A Adhesive force is 50 kPa or more and less than 200 kPa: B Adhesive force is less than 50 kPa or 500 kPa or more: C

<Adhesion at 80 ° C> The adhesion of the adhesive layer at 80 ° C was evaluated in the following manner.

That is, first, for the adhesive tapes 100 of Examples 1B to 5B and Reference Examples 1B and 2B, the adhesive tester TAC-II of RHESCA CO., LTD. was used in accordance with JIS Z 0237, with the adhesive layer facing up, A probe made of SUS304 having a diameter of 5.0 mm was brought into contact with the probe from the upper side, and the speed at which the probe was brought into contact with the adhesive layer at this time was 30 mm/min, the contact load was set to 200 gf, and the contact time was set to 10 seconds. The needle temperature and plate temperature were set to 80 °C. Then, the probe was peeled off at a peeling speed of 600 mm/min, and the force required for peeling was measured as the adhesive force. Further, according to the obtained adhesive force, the adhesion at 80 ° C was evaluated based on the evaluation criteria shown below. The evaluation results are shown in Table 2.

[Evaluation Criteria] The adhesive force is 20 kPa or more and less than 150 kPa: A The adhesive force is 150 kPa or more and less than 300 kPa: B The adhesive force is less than 20 kPa or more than 300 kPa: C

< Tape Mounting Characteristics> The tape mounting characteristics were evaluated in the following manner.

In other words, first, a glass epoxy dummy substrate (sealing material: G760L, manufactured by Sumitomo Bakelite Co., Ltd.) was attached to the adhesive tapes 100 of Examples 1B to 5B and Reference Examples 1B and 2B (60 mm × 15 mm × 1.2 mm thick), visually observed whether or not there was a trapped bubble between the adhesive layer 2 and the dummy substrate provided in the adhesive tape 100, and the tape mounting was evaluated based on the evaluation criteria shown below in accordance with the number of observed bubbles. characteristic. The evaluation results are shown in Table 2.

[Evaluation Criteria] No bubble was observed between the adhesive layer and the dummy substrate: A. Some bubbles were observed between the adhesive layer and the dummy substrate: B was between the adhesive layer and the dummy substrate due to insufficient viscosity. Obviously see the generation of bubbles: C

<Backside contamination and residual adhesive characteristics> Backside contamination and residual adhesive properties were evaluated in the following manner.

In other words, first, a glass epoxy dummy substrate (sealing material: G760L, manufactured by Sumitomo Bakelite Co., Ltd.) was attached to the adhesive tapes 100 of Examples 1B to 5B and Reference Examples 1B and 2B (60 mm × 15 mm × 1.2 mm thick), then cutting was performed under the following conditions, and 50 subdivided dummy substrates were picked up using a vacuum collet, and the backside contamination and the presence or absence of residual glue of the simulated substrate picked up were visually observed, and back contamination was observed or The number of dummy substrates of the residual glue was evaluated for back contamination and residual adhesive properties based on the evaluation criteria shown below. The evaluation results are shown in Table 2.

[Evaluation Criteria] The number of simulated substrates on which back contamination or residual glue was observed was 0/50: A. The number of simulated substrates on which backside contamination or residual glue was observed was 1 to 3/50: B. Backside contamination or residual glue was observed. The number of simulation substrates is 4/50 or more: C

[Cutting conditions] Cutting device: "DAD-3350" (trade name, manufactured by DISCO Corporation) Cutting blade: "P08-SDC220" (trade name, manufactured by DISCO Corporation) Blade rotation speed: 30000 rpm Cutting speed: 100 mm/sec Cutting: cutting from The surface of the film is 100 μm (cutting amount for the cut-in layer is 80 μm). Cutting size: 5 mm × 5 mm Blade cooler: 2 L/min

【Table 2】

As shown in Table 2, in the adhesive tape 100 of Examples 1B to 5B, the adhesive strength of the adhesive layer 2 was 50 kPa or more and less than 500 kPa at 25 ° C, and 20 kPa or more and less than 300 kPa at 80 ° C was obtained. Thereby, excellent tape mounting characteristics, backside contamination and residual adhesive properties are exhibited, and as a result, the dummy substrate (object) is firmly fixed at the cutting step, and energy is applied to the adhesive layer after the cutting step. The dummy substrate (object) can be easily picked up without causing residual glue or the like. On the other hand, in the adhesive tape 100 of the reference examples 1B and 2B, the adhesive force of the adhesive layer 2 was not satisfied at 25 ° C and 50 kPa or more and less than 500 kPa, and 80 ° C was 20 kPa or more and less than 300 kPa. Characteristics, as well as poor back contamination and residual adhesive properties.

3. Investigation of total light transmittance and elongation at break of the substrate 3-1. Preparation of raw materials First, the raw materials used in the production of the base film for dicing films of the respective examples were as follows.

<Material of Substrate 4> Ionic polymer resin "Himilan 1855" (manufactured by DU PONT-MITSUI POLYCHEMICALS CO., LTD.; metal atom Zn, MFR 1.0 melting point 86 ° C) Ionic polymer resin "Himilan 1554" (DU PONT -MITSUI POLYCHEMICALS CO., LTD.; metal atom Zn, MFR1.3 melting point 97 ° C) ionic polymer resin "Himilan 1650" (DU PONT-MITSUI POLYCHEMICALS CO., LTD.; metal atom Zn, MFR1.5 melting point 96°C) Ionic polymer resin “Himilan 1652” (manufactured by DU PONT-MITSUI POLYCHEMICALS CO., LTD.; metal atom Zn, MFR5.5 melting point 98°C) ionic polymer resin “Himilan 1601” (DU PONT-MITSUI POLYCHEMICALS CO ., manufactured by LTD.; metal atom Na, MFR 1.3 melting point 97 ° C) Ethylene-methyl methacrylate copolymer (EMMA) "Acryft WD201-F" (manufactured by Sumitomo Chemical Co., Ltd., melting point 100 ° C) - Methyl acrylate copolymer (EMA) "Rexpearl EB050S" (manufactured by Japan Polyethylene Corporation, melting point 73 ° C) Low density polyethylene LDPE "F222" (manufactured by Ube-Maruzen Polyethlene Co, Ltd.; melting point 110 ° C) Low density polyethylene LDPE "Petrosen 203" (manufactured by TOSOH CORPORATION; melting point 100 120 ° C) Low-density polyethylene LDPE "1520F" (manufactured by Ube-Maruzen Polyethlene Co., Ltd., melting point 114 ° C) Antistatic agent "Pelectron PVH" (manufactured by Sanyo Chemical Industries, Ltd.) Antistatic agent "Pelestat 230" ( Sanyo Chemical Industries, Ltd.; polyether/polyolefin block polymer) antistatic agent "Electrostripper TS-13B" (manufactured by Kao Corporation; nonionic surfactant)

<Material of Adhesive Layer 2> The following raw materials were used for the adhesive layer of each Example.

<Base Resin> The following acrylic copolymer was obtained by mixing butyl acrylate (BA) and acrylic acid (AA) in the following weight ratio and solution-polymerizing it in a toluene solvent by a conventional method. Acrylic copolymer 1 (BA/AA=90/10, weight average molecular weight 600,000)

<UV hardening resin> Amino acrylate acrylate 1 (Shin-Nakamura Chemical Co., Ltd., trade name: UA-33H): 20 parts by weight

<Crosslinking agent> Polyisocyanate compound (trade name "Coronate L", manufactured by Nippon Polyurethane Industry Co., Ltd.)

<Photoinitiator> A benzophenone-based photoinitiator (trade name "IRGACURE 651", manufactured by Ciba Specialty Chemicals Corporation)

3-2. Preparation of Adhesive Tape for Processing of Semiconductor Substrate (Example 1C) <Preparation of Substrate 4 (Substrate Film for Cleaved Film)> As the resin for forming the cut layer, an ionic polymer resin "Himilan 1855" was used.

Further, 80.0% by mass of the low-density polyethylene LDPE "F222" and 20.0% by mass of the antistatic agent "Pelectron PVH" were blended, and a resin composition for forming an expanded layer was obtained.

In addition, the resin composition for forming a cut layer and the resin composition for forming an expanded layer were supplied to each extruder adjusted to 200 ° C, and the pattern of the cut layer/expansion layer was changed from a two-layer mold at 200 ° C. The extrusion was carried out by cooling and solidifying using a chill roll set at 20 ° C, and the film was wound up in a substantially unstretched state, whereby a substrate 4 having a two-layer structure (base film for dicing film) was obtained.

Further, the thickness of the cut-in layer 41 in the obtained base material 4 was 100 μm, the thickness of the expanded layer 42 was 50 μm, and the thickness of the entire base material 4 was 150 μm.

Further, the total light transmittance of the substrate 4 measured by the method specified in JIS K 7361-1 under the D65 standard light source was 92%, and the slit was formed to a fracture elongation of the substrate 4 of 60% of the thickness. It is 100%.

<Production of Adhesive Tape 100 (Cut Film)> The adhesive tape 100 was obtained by providing the adhesive layer 2 on the cut layer 41 of the substrate 4 produced as described above. Specifically, 49.8 wt% of the base resin as a raw material of the adhesive layer 2, 39.8% by mass of the UV curable resin, 6.5% by mass of the crosslinking agent, and 3.9% by mass of the photoinitiator were used, and this was dissolved in ethyl acetate and carried out. Mixing to obtain a mixture. Then, the mixture was bar-coated on the cut-in layer of the substrate 4 so that the thickness after drying became 20 μm, and then dried at 80 ° C for 10 minutes, whereby the adhesive tape 100 of Example 1C was obtained.

<Preparation of the cut-in layer 41> The ionic polymer resin "Himilan 1855" was prepared as a resin for the cut-in layer, and the resin for forming the cut-in layer was supplied to an extruder adjusted to 200 ° C from a 1-layer mold at 200 ° C. The film was extruded and cooled and solidified by a cooling roll set at 20 ° C, and wound up in a substantially unstretched state, whereby a cut-in layer 41 having a one-layer structure was obtained. Further, the thickness of the obtained cut-in layer 41 was 100 μm.

Further, the elongation at break of the cut-in layer 41 was measured and found to be 180%. Further, the tensile elastic modulus of the cut-in layer 41 was measured and found to be 110 MPa.

<Preparation of the expanded layer 42> As a resin composition for forming an expanded layer, a dry blended low-density polyethylene LDPE "F222" of 80.0% by mass and an antistatic agent "Pelectron PVH" of 20.0% by mass are prepared, and the expanded layer is prepared. The resin composition for forming was supplied to an extruder adjusted to 200 ° C, extruded from a 1-layer mold at 200 ° C, cooled and solidified by a cooling roll set at 20 ° C, and wound up in a substantially unstretched state. Thereby, an expanded layer 42 having a one-layer structure is obtained.

Further, the obtained substrate 4 had a thickness of 50 μm. Further, the tensile elastic modulus of the expanded layer 42 was measured and found to be 170 MPa.

(Examples 2C to 12C) The base material 4 and the pressure-sensitive adhesive tape 100 of Examples 2C to 12C were produced in the same manner as in Example 1C except that the types of the raw materials and the blending ratio thereof were changed as described in Table 3.

3-3. Evaluation <visibility characteristics> The visibility characteristics were evaluated in the following manner.

In other words, first, the adhesive tapes 100 of the examples 1C to 12C were attached to a substrate having irregularities having a depth of 50 μm and a pitch of 1 mm, and the unevenness of the substrate was visually observed through the attached adhesive tape 100, and the unevenness was observed. The visibility was evaluated based on the evaluation criteria shown below. The evaluation results are shown in Table 3.

[Evaluation Criteria] The unevenness of the substrate can be clearly observed: A Although a slight mist is observed, the unevenness of the substrate can be observed: B The fog is clearly observed, and it takes time to confirm the unevenness of the substrate: C

<Cutting property> The chip characteristics were evaluated as follows.

In other words, first, a glass epoxy dummy substrate (sealing material: G760L, manufactured by Sumitomo Bakelite Co., Ltd.) (60 mm × 15 mm × 1.2 mm thick) was attached to the adhesive tape 100 of Examples 1C to 12C, and the following The cutting was performed under the conditions, and the cutting line was observed. The number of chips exceeding 100 μm or more of the length of the cutting line was counted, and the chip characteristics were evaluated based on the evaluation criteria shown below. The evaluation results are shown in Table 3.

[Evaluation Criteria] The number of chips is 0 to 5: A The number of chips is 6 to 10: B The number of chips is 11 or more: C

[Cutting conditions] Cutting device: "DAD-3350" (trade name, manufactured by DISCO Corporation) Cutting blade: "P08-SDC220" (trade name, manufactured by DISCO Corporation) Blade rotation speed: 30000 rpm Cutting speed: 100 mm/sec Cutting: cutting from The surface of the film is 100 μm (cutting amount for the cut-in layer is 80 μm). Cutting size: 10 mm × 10 mm Blade cooler: 2 L/min

【table 3】

As shown in Table 3, the adhesive tapes 100 of Examples 1C to 12C were set to have a total light transmittance of 85% or more and 98% or less under the D65 standard light source according to the method specified in JIS K 7361-1. Thereby, the result of the adhesive tape 100 excellent in visibility characteristics was shown. [Industry Utilization]

According to the present invention, it is possible to provide an adhesive tape for processing a semiconductor substrate, comprising: a substrate; and an adhesive layer laminated on one surface of the substrate, wherein the adhesive tape for processing the semiconductor substrate is characterized in that the substrate has a cut-in The layer is located on the one surface side; and the expansion layer is laminated on the other surface of the cut layer, and the adhesive force of the expanded layer is 1 kPa or more and 200 kPa or less at 80 °C. Thereby, even in the cutting step, even if it is heated by friction with the dicing saw, the occurrence of warpage can be surely prevented, and the welding of the expansion layer to the cutter table can be suppressed or prevented. Therefore, workability and throughput can be improved when manufacturing a semiconductor device using an adhesive tape for processing a semiconductor substrate. Therefore, the present invention has industrial applicability.

1‧‧‧Isolation
2‧‧‧Adhesive layer
4‧‧‧Substrate
20‧‧‧ semiconductor equipment
21‧‧‧Bumps
22‧‧‧Covering Department
23‧‧‧ wiring
25‧‧‧Intermediary
25'‧‧‧Sheet
26‧‧‧Semiconductor components
27‧‧‧ Sealing Department
41‧‧‧cutting layer
42‧‧‧Expansion layer
62‧‧‧ recess
100‧‧‧Adhesive tape for processing semiconductor substrates (adhesive tape)
121‧‧‧The outer part
122‧‧‧ Central Department
200‧‧‧ test piece
201‧‧‧ Central Department
202‧‧‧End
203‧‧‧ incision
204‧‧‧ marking
221‧‧‧ openings
270‧‧‧Semiconductor sealing joint
290‧‧‧Semiconductor seal

1 is a longitudinal cross-sectional view showing an example of a semiconductor device manufactured by using an adhesive tape for processing a semiconductor substrate of the present invention. 2(a) to 2(f) are longitudinal cross-sectional views for explaining a method of manufacturing the semiconductor device shown in Fig. 1 by using an adhesive tape for processing a semiconductor substrate of the present invention. 3(a) to 3(d) are longitudinal cross-sectional views for explaining a method of manufacturing the semiconductor device shown in Fig. 1 by using an adhesive tape for processing a semiconductor substrate of the present invention. Fig. 4 is a longitudinal cross-sectional view showing an embodiment of an adhesive tape for processing a semiconductor substrate of the present invention. FIG. 5 is a plan view showing a test piece used for measuring the elongation at break of the substrate provided in the adhesive tape for processing a semiconductor substrate of the present invention. 6(a) to 6(d) are longitudinal cross-sectional views for explaining a method of manufacturing the adhesive tape for processing a semiconductor substrate shown in Fig. 4.

no

2‧‧‧Adhesive layer

4‧‧‧Substrate

20‧‧‧ semiconductor equipment

21‧‧‧Bumps

22‧‧‧Covering Department

23‧‧‧ wiring

25‧‧‧Intermediary

26‧‧‧Semiconductor components

27‧‧‧ Sealing Department

62‧‧‧ recess

100‧‧‧Adhesive tape for processing semiconductor substrates (adhesive tape)

221‧‧‧ openings

290‧‧‧Semiconductor seal

Claims (15)

An adhesive tape for processing a semiconductor substrate, comprising: a substrate; and an adhesive layer laminated on one surface of the substrate, wherein the adhesive tape for processing the semiconductor substrate is characterized in that the substrate has a cut-in layer on the one surface The side surface and the expansion layer are laminated on the other surface of the cut layer, and the adhesive force of the expanded layer is 1 kPa or more and 200 kPa or less at 80 °C. The adhesive tape for processing a semiconductor substrate according to claim 1, wherein the expanded layer contains a resin material having expandability. The adhesive tape for processing a semiconductor substrate according to the second aspect of the invention, wherein the expandable resin material is a polyethylene resin. The adhesive tape for processing a semiconductor substrate according to the first aspect of the invention, wherein the cut-in layer contains a resin material having a high melt viscosity and an expandability. The adhesive tape for processing a semiconductor substrate according to the fourth aspect of the invention, wherein the resin material having a high melt viscosity and having expandability is an ionic polymer resin. The adhesive tape for processing a semiconductor substrate according to the first aspect of the invention, wherein the thickness of the expanded layer is 7 μm or more and 95 μm or less. The adhesive tape for processing a semiconductor substrate according to the first aspect of the invention, wherein the thickness of the cut-in layer is 10 μm or more and 140 μm or less. The adhesive tape for processing a semiconductor substrate according to the first aspect of the invention, wherein the adhesive layer has an adhesive force of 50 kPa or more and less than 500 kPa at 25 ° C and 20 kPa or more and less than 300 kPa at 80 ° C. The adhesive tape for processing a semiconductor substrate according to the first aspect of the invention, wherein the adhesive force of the expanded layer at 80 ° C is set to A [kPa], and the adhesive force of the adhesive layer at 80 ° C is set to B [kPa] When A/B satisfies the relationship of 0.003 or more and 15 or less. The adhesive tape for processing a semiconductor substrate according to the first aspect of the invention, wherein the adhesive tape for processing a semiconductor substrate is used for temporarily fixing a semiconductor substrate to the substrate via the adhesive layer, and performing the semiconductor substrate in a thickness direction. After the dicing and dicing process, energy is applied to the adhesive layer, whereby the singulated semiconductor substrate is detached from the adhesive layer. The adhesive tape for processing a semiconductor substrate according to the first aspect of the invention, wherein the adhesive layer contains a base resin having adhesiveness. The adhesive tape for processing a semiconductor substrate according to claim 11, wherein the base resin is an acrylic resin. The adhesive tape for processing a semiconductor substrate according to claim 11, wherein the adhesive layer further contains a curable resin which is hardened by the application of energy. The adhesive tape for processing a semiconductor substrate according to the first aspect of the invention, wherein the thickness of the adhesive layer is 1 μm or more and 30 μm or less. The adhesive tape for processing a semiconductor substrate according to claim 1, wherein when the slit is formed in the thickness direction to 60% of the thickness of the substrate, the elongation at break of the substrate is 50 according to JIS K 6734. More than % and less than 400%.