TW201803084A - 半導體裝置的元件電路 - Google Patents

半導體裝置的元件電路

Info

Publication number
TW201803084A
TW201803084A TW106134477A TW106134477A TW201803084A TW 201803084 A TW201803084 A TW 201803084A TW 106134477 A TW106134477 A TW 106134477A TW 106134477 A TW106134477 A TW 106134477A TW 201803084 A TW201803084 A TW 201803084A
Authority
TW
Taiwan
Prior art keywords
diffusion
gate electrode
fin
layout
pitch
Prior art date
Application number
TW106134477A
Other languages
English (en)
Chinese (zh)
Inventor
法克斯達利爾
Original Assignee
泰拉創新股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 泰拉創新股份有限公司 filed Critical 泰拉創新股份有限公司
Publication of TW201803084A publication Critical patent/TW201803084A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0243—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] using dummy structures having essentially the same shapes as the semiconductor bodies, e.g. to provide stability
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01326—Aspects related to lithography, isolation or planarisation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0193—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/853—Complementary IGFETs, e.g. CMOS comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
TW106134477A 2012-01-13 2013-01-14 半導體裝置的元件電路 TW201803084A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261586387P 2012-01-13 2012-01-13
US61/586,387 2012-01-13
US201261589224P 2012-01-20 2012-01-20
US61/589,224 2012-01-20

Publications (1)

Publication Number Publication Date
TW201803084A true TW201803084A (zh) 2018-01-16

Family

ID=48781972

Family Applications (4)

Application Number Title Priority Date Filing Date
TW106134477A TW201803084A (zh) 2012-01-13 2013-01-14 半導體裝置的元件電路
TW106104453A TWI608593B (zh) 2012-01-13 2013-01-14 半導體裝置的元件電路
TW102101384A TWI552307B (zh) 2012-01-13 2013-01-14 半導體裝置、製造該半導體裝置的方法、及具有用於提供該半導體裝置佈局之電腦可執行程式指令儲存於其上的資料儲存裝置
TW105125226A TWI581403B (zh) 2012-01-13 2013-01-14 半導體裝置、製造該半導體裝置的方法、及具有用於提供該半導體裝置佈局之電腦可執行程式指令儲存於其上的資料儲存裝置

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW106104453A TWI608593B (zh) 2012-01-13 2013-01-14 半導體裝置的元件電路
TW102101384A TWI552307B (zh) 2012-01-13 2013-01-14 半導體裝置、製造該半導體裝置的方法、及具有用於提供該半導體裝置佈局之電腦可執行程式指令儲存於其上的資料儲存裝置
TW105125226A TWI581403B (zh) 2012-01-13 2013-01-14 半導體裝置、製造該半導體裝置的方法、及具有用於提供該半導體裝置佈局之電腦可執行程式指令儲存於其上的資料儲存裝置

Country Status (8)

Country Link
EP (1) EP2803077A4 (fr)
JP (3) JP2015506589A (fr)
KR (1) KR101913457B1 (fr)
CN (2) CN104303263B (fr)
AU (4) AU2013207719B2 (fr)
SG (2) SG11201404024YA (fr)
TW (4) TW201803084A (fr)
WO (1) WO2013106799A1 (fr)

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TWI724459B (zh) * 2018-07-16 2021-04-11 台灣積體電路製造股份有限公司 產生包含突起接腳單元區之佈局圖的方法及其半導體元件
US12040271B2 (en) 2019-10-21 2024-07-16 Tokyo Electron Limited Power delivery network for CFET with buried power rails

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JP6449082B2 (ja) 2014-08-18 2019-01-09 ルネサスエレクトロニクス株式会社 半導体装置
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Publication number Priority date Publication date Assignee Title
TWI724459B (zh) * 2018-07-16 2021-04-11 台灣積體電路製造股份有限公司 產生包含突起接腳單元區之佈局圖的方法及其半導體元件
US12040271B2 (en) 2019-10-21 2024-07-16 Tokyo Electron Limited Power delivery network for CFET with buried power rails
TWI873208B (zh) * 2019-10-21 2025-02-21 日商東京威力科創股份有限公司 具有埋設式電力軌的用於cfet的電力輸送網路

Also Published As

Publication number Publication date
EP2803077A4 (fr) 2015-11-04
CN104303263B (zh) 2016-12-14
WO2013106799A1 (fr) 2013-07-18
TWI608593B (zh) 2017-12-11
JP2015506589A (ja) 2015-03-02
JP2017224858A (ja) 2017-12-21
CN104303263A (zh) 2015-01-21
CN107424999A (zh) 2017-12-01
TWI581403B (zh) 2017-05-01
AU2013207719A1 (en) 2014-07-31
KR20140114424A (ko) 2014-09-26
JP2019054297A (ja) 2019-04-04
SG10201605564WA (en) 2016-09-29
JP6467476B2 (ja) 2019-02-13
TWI552307B (zh) 2016-10-01
EP2803077A1 (fr) 2014-11-19
TW201642440A (zh) 2016-12-01
AU2016202229A1 (en) 2016-05-05
AU2020201521A1 (en) 2020-03-19
TW201349451A (zh) 2013-12-01
AU2013207719B2 (en) 2016-02-25
SG11201404024YA (en) 2014-08-28
AU2018200549A1 (en) 2018-02-15
KR101913457B1 (ko) 2018-10-30
AU2018200549B2 (en) 2019-12-05
TW201717355A (zh) 2017-05-16
AU2016202229B2 (en) 2018-02-15

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