TW202425335A - P型氮化鎵高電子遷移率電晶體場鍍覆 - Google Patents

P型氮化鎵高電子遷移率電晶體場鍍覆 Download PDF

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Publication number
TW202425335A
TW202425335A TW112128314A TW112128314A TW202425335A TW 202425335 A TW202425335 A TW 202425335A TW 112128314 A TW112128314 A TW 112128314A TW 112128314 A TW112128314 A TW 112128314A TW 202425335 A TW202425335 A TW 202425335A
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TW
Taiwan
Prior art keywords
field plate
gate
drain
source
hemt
Prior art date
Application number
TW112128314A
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English (en)
Chinese (zh)
Inventor
艾曼 希比布
薩巴 拉賈比
Original Assignee
美商維西埃矽化物公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商維西埃矽化物公司 filed Critical 美商維西埃矽化物公司
Publication of TW202425335A publication Critical patent/TW202425335A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
TW112128314A 2022-08-03 2023-07-28 P型氮化鎵高電子遷移率電晶體場鍍覆 TW202425335A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/US2022/039314 WO2024030127A1 (fr) 2022-08-03 2022-08-03 Placage de champ de transistor à haute mobilité d'électrons p-gan
WOPCT/US2022/039314 2022-08-03

Publications (1)

Publication Number Publication Date
TW202425335A true TW202425335A (zh) 2024-06-16

Family

ID=89849398

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112128314A TW202425335A (zh) 2022-08-03 2023-07-28 P型氮化鎵高電子遷移率電晶體場鍍覆

Country Status (7)

Country Link
EP (1) EP4548401A4 (fr)
JP (1) JP2025527130A (fr)
KR (1) KR20250048449A (fr)
CN (1) CN119732201A (fr)
IL (1) IL318735A (fr)
TW (1) TW202425335A (fr)
WO (1) WO2024030127A1 (fr)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8791503B2 (en) * 2007-09-18 2014-07-29 International Rectifier Corporation III-nitride semiconductor device with reduced electric field between gate and drain and process for its manufacture
JP2010118556A (ja) * 2008-11-13 2010-05-27 Furukawa Electric Co Ltd:The 半導体装置および半導体装置の製造方法
US8921893B2 (en) * 2011-12-01 2014-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit structure having islands between source and drain
TWI626742B (zh) * 2015-06-18 2018-06-11 台達電子工業股份有限公司 半導體裝置
US9653556B1 (en) * 2016-02-29 2017-05-16 Toshiba Corporation Field plate for high-voltage field effect transistors
TWI613814B (zh) * 2016-11-29 2018-02-01 新唐科技股份有限公司 增強型高電子遷移率電晶體元件
US10461161B1 (en) * 2017-01-23 2019-10-29 Navitas Semiconductor, Inc. GaN device with floating field plates
JP6874928B2 (ja) * 2017-10-24 2021-05-19 住友電工デバイス・イノベーション株式会社 半導体装置

Also Published As

Publication number Publication date
EP4548401A1 (fr) 2025-05-07
EP4548401A4 (fr) 2026-04-08
CN119732201A (zh) 2025-03-28
KR20250048449A (ko) 2025-04-08
WO2024030127A1 (fr) 2024-02-08
IL318735A (en) 2025-03-01
JP2025527130A (ja) 2025-08-20

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