TW202619476A - 半導體結構及其製造方法 - Google Patents
半導體結構及其製造方法Info
- Publication number
- TW202619476A TW202619476A TW113140192A TW113140192A TW202619476A TW 202619476 A TW202619476 A TW 202619476A TW 113140192 A TW113140192 A TW 113140192A TW 113140192 A TW113140192 A TW 113140192A TW 202619476 A TW202619476 A TW 202619476A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- disposed
- isolation structure
- semiconductor structure
- memory device
- Prior art date
Links
Abstract
一種半導體結構及其製造方法。所述半導體結構包括基底、第一隔離結構、第二隔離結構、字元線、墊層、覆蓋層以及虛設圖案。所述基底具有記憶元件區與周邊區。所述第一隔離結構設置於所述記憶元件區中的所述基底中，以界定出主動區。所述第二隔離結構設置於所述周邊區中的所述基底中。所述字元線設置於所述主動區中的所述基底中。所述墊層設置於所述記憶元件區中的所述基底上。所述覆蓋層設置於所述墊層上，且向下延伸至所述字元線的頂面。所述虛設圖案設置於所述第二隔離結構中。
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW113140192A TWI912977B (zh) | 2024-10-22 | 2024-10-22 | 半導體結構及其製造方法 |
| US18/976,361 US20260113924A1 (en) | 2024-10-22 | 2024-12-11 | Semiconductor structure and manufacturing method thereof |
| CN202510050928.9A CN121941045A (zh) | 2024-10-22 | 2025-01-13 | 半导体结构及其制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW113140192A TWI912977B (zh) | 2024-10-22 | 2024-10-22 | 半導體結構及其製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI912977B TWI912977B (zh) | 2026-01-21 |
| TW202619476A true TW202619476A (zh) | 2026-05-01 |
Family
ID=99311410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW113140192A TWI912977B (zh) | 2024-10-22 | 2024-10-22 | 半導體結構及其製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20260113924A1 (zh) |
| CN (1) | CN121941045A (zh) |
| TW (1) | TWI912977B (zh) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110223982B (zh) * | 2018-03-01 | 2021-07-27 | 联华电子股份有限公司 | 动态随机存取存储器及其制作方法 |
| KR102769861B1 (ko) * | 2020-07-29 | 2025-02-17 | 삼성전자주식회사 | 반도체 메모리 소자 및 그 제조 방법 |
| KR102908280B1 (ko) * | 2021-06-17 | 2026-01-07 | 삼성전자주식회사 | 더미 게이트 구조체를 갖는 반도체 소자 |
| KR20230080092A (ko) * | 2021-11-29 | 2023-06-07 | 삼성전자주식회사 | 반도체 장치 |
| KR20240030712A (ko) * | 2022-08-31 | 2024-03-07 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조 방법 |
| TWI839043B (zh) * | 2022-12-26 | 2024-04-11 | 華邦電子股份有限公司 | 半導體結構及其製造方法 |
| KR20240122024A (ko) * | 2023-02-03 | 2024-08-12 | 삼성전자주식회사 | 반도체 소자 |
| KR20240143535A (ko) * | 2023-03-24 | 2024-10-02 | 삼성전자주식회사 | 집적회로 소자 및 이의 제조 방법 |
-
2024
- 2024-10-22 TW TW113140192A patent/TWI912977B/zh active
- 2024-12-11 US US18/976,361 patent/US20260113924A1/en active Pending
-
2025
- 2025-01-13 CN CN202510050928.9A patent/CN121941045A/zh active Pending
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