TW211081B - - Google Patents
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- Publication number
- TW211081B TW211081B TW081103106A TW81103106A TW211081B TW 211081 B TW211081 B TW 211081B TW 081103106 A TW081103106 A TW 081103106A TW 81103106 A TW81103106 A TW 81103106A TW 211081 B TW211081 B TW 211081B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- conductivity type
- plaque
- insulating layer
- substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/228—Channel regions of field-effect devices of FETs having delta-doped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/01—Manufacture or treatment
- H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
- H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4113755 | 1991-04-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW211081B true TW211081B (2) | 1993-08-11 |
Family
ID=6430471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW081103106A TW211081B (2) | 1991-04-26 | 1992-04-21 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5212104A (2) |
| EP (1) | EP0510349B1 (2) |
| JP (1) | JPH05145070A (2) |
| KR (1) | KR100313469B1 (2) |
| AT (1) | ATE139060T1 (2) |
| DE (1) | DE59206456D1 (2) |
| TW (1) | TW211081B (2) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04299569A (ja) * | 1991-03-27 | 1992-10-22 | Nec Corp | Ｓｏｉｓの製造方法及びトランジスタとその製造方法 |
| US5559368A (en) * | 1994-08-30 | 1996-09-24 | The Regents Of The University Of California | Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation |
| TW475268B (en) | 2000-05-31 | 2002-02-01 | Matsushita Electric Industrial Co Ltd | Misfet |
| US6580137B2 (en) | 2000-08-29 | 2003-06-17 | Boise State University | Damascene double gated transistors and related manufacturing methods |
| DE102006009226B9 (de) * | 2006-02-28 | 2011-03-10 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Herstellen eines Transistors mit einer erhöhten Schwellwertstabilität ohne Durchlass-Strombeeinträchtigung und Transistor |
| EP4141932A3 (en) * | 2021-08-31 | 2023-05-03 | Invention And Collaboration Laboratory Pte. Ltd. | Standard cell structure |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2911726C2 (de) * | 1978-03-27 | 1985-08-01 | Ncr Corp., Dayton, Ohio | Verfahren zur Herstellung eines Feldeffekttransistors |
| JPS5750452A (en) * | 1980-09-12 | 1982-03-24 | Fujitsu Ltd | Semiconductor device |
| JPS58157169A (ja) * | 1982-03-15 | 1983-09-19 | Sharp Corp | 半導体装置 |
| JPS5910278A (ja) * | 1983-06-24 | 1984-01-19 | Hitachi Ltd | 半導体装置 |
| JPS59188175A (ja) * | 1984-02-01 | 1984-10-25 | Hitachi Ltd | 半導体装置 |
| JPS61116875A (ja) * | 1985-11-13 | 1986-06-04 | Hitachi Ltd | 半導体装置 |
| US4908678A (en) * | 1986-10-08 | 1990-03-13 | Semiconductor Energy Laboratory Co., Ltd. | FET with a super lattice channel |
| JPH01204411A (ja) * | 1988-02-09 | 1989-08-17 | Nec Corp | 半導体装置の製造方法 |
-
1992
- 1992-03-09 US US07/848,238 patent/US5212104A/en not_active Expired - Fee Related
- 1992-03-16 DE DE59206456T patent/DE59206456D1/de not_active Expired - Fee Related
- 1992-03-16 EP EP92104520A patent/EP0510349B1/de not_active Expired - Lifetime
- 1992-03-16 AT AT92104520T patent/ATE139060T1/de not_active IP Right Cessation
- 1992-04-21 TW TW081103106A patent/TW211081B/zh active
- 1992-04-22 JP JP4130120A patent/JPH05145070A/ja not_active Withdrawn
- 1992-04-27 KR KR1019920007106A patent/KR100313469B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0510349B1 (de) | 1996-06-05 |
| US5212104A (en) | 1993-05-18 |
| DE59206456D1 (de) | 1996-07-11 |
| ATE139060T1 (de) | 1996-06-15 |
| KR100313469B1 (ko) | 2001-12-28 |
| KR920020758A (ko) | 1992-11-21 |
| EP0510349A1 (de) | 1992-10-28 |
| JPH05145070A (ja) | 1993-06-11 |
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