TW293148B - - Google Patents

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Publication number
TW293148B
TW293148B TW084101687A TW84101687A TW293148B TW 293148 B TW293148 B TW 293148B TW 084101687 A TW084101687 A TW 084101687A TW 84101687 A TW84101687 A TW 84101687A TW 293148 B TW293148 B TW 293148B
Authority
TW
Taiwan
Prior art keywords
etching
patent application
item
indication
monitor
Prior art date
Application number
TW084101687A
Other languages
English (en)
Chinese (zh)
Inventor
W Wong Justin
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW293148B publication Critical patent/TW293148B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/34—Generating the ultrasonic, sonic or infrasonic waves, e.g. electronic circuits specially adapted therefor
    • G01N29/348—Generating the ultrasonic, sonic or infrasonic waves, e.g. electronic circuits specially adapted therefor with frequency characteristics, e.g. single frequency signals, chirp signals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/36—Detecting the response signal, e.g. electronic circuits specially adapted therefor
    • G01N29/42—Detecting the response signal, e.g. electronic circuits specially adapted therefor by frequency filtering or by tuning to resonant frequency
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • G03F7/3028—Imagewise removal using liquid means from a wafer supported on a rotating chuck characterised by means for on-wafer monitoring of the processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/02—Indexing codes associated with the analysed material
    • G01N2291/023—Solids
    • G01N2291/0231—Composite or layered materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/26—Scanned objects
    • G01N2291/269—Various geometry objects
    • G01N2291/2694—Wings or other aircraft parts

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Weting (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • ing And Chemical Polishing (AREA)
TW084101687A 1994-06-30 1995-02-23 TW293148B (2)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/269,862 US5582746A (en) 1992-12-04 1994-06-30 Real time measurement of etch rate during a chemical etching process

Publications (1)

Publication Number Publication Date
TW293148B true TW293148B (2) 1996-12-11

Family

ID=23028960

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084101687A TW293148B (2) 1994-06-30 1995-02-23

Country Status (4)

Country Link
US (2) US5582746A (2)
EP (1) EP0690488A3 (2)
JP (1) JP3149334B2 (2)
TW (1) TW293148B (2)

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US5654903A (en) * 1995-11-07 1997-08-05 Lucent Technologies Inc. Method and apparatus for real time monitoring of wafer attributes in a plasma etch process
KR0161887B1 (ko) * 1995-12-26 1999-02-18 문정환 용기를 갖는 습식에치 장치의 에치 종말점 측정방법
US7244622B2 (en) * 1996-04-03 2007-07-17 Applera Corporation Device and method for multiple analyte detection
KR100250453B1 (ko) 1997-11-29 2000-04-01 정선종 브래그 거울의 식각을 실시간으로 감지하는 방법
US6326794B1 (en) 1999-01-14 2001-12-04 International Business Machines Corporation Method and apparatus for in-situ monitoring of ion energy distribution for endpoint detection via capacitance measurement
TW468202B (en) * 1999-06-17 2001-12-11 Koninkl Philips Electronics Nv Method of manufacturing electronic devices, and apparatus for carrying out such a method
US6387810B2 (en) * 1999-06-28 2002-05-14 International Business Machines Corporation Method for homogenizing device parameters through photoresist planarization
US6355564B1 (en) * 1999-08-26 2002-03-12 Advanced Micro Devices, Inc. Selective back side reactive ion etch
US6350624B1 (en) * 1999-09-29 2002-02-26 Advanced Micro Devices, Inc. Substrate removal as a functional of sonic analysis
IE20010288A1 (en) * 2001-03-23 2002-10-02 Scient Systems Res Ltd Endpoint Detection in the Etching of Dielectric Layers
US6821892B1 (en) 2001-06-04 2004-11-23 Promos Technologies, Inc. Intelligent wet etching tool as a function of chemical concentration, temperature and film loss
IL145649A0 (en) * 2001-09-25 2002-06-30 Nira Sciences Ltd Method and apparatus for real-time dynamic chemical analysis
US6687014B2 (en) 2002-01-16 2004-02-03 Infineon Technologies Ag Method for monitoring the rate of etching of a semiconductor
US6843880B2 (en) * 2002-05-24 2005-01-18 International Business Machines Corporation Enhanced endpoint detection for wet etch process control
KR100476935B1 (ko) * 2002-10-14 2005-03-16 삼성전자주식회사 식각공정의 임계치수 제어방법
TWI240326B (en) * 2002-10-31 2005-09-21 Tokyo Electron Ltd Method and apparatus for determining an etch property using an endpoint signal
US7269469B2 (en) * 2004-03-09 2007-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for scheduling manufacturing jobs for a semiconductor manufacturing tool
CN101436530B (zh) * 2008-12-12 2012-01-18 上海宏力半导体制造有限公司 利用光学发射光谱特性对刻蚀过程进行监测的方法
CN102931045B (zh) * 2012-10-18 2015-08-26 中微半导体设备(上海)有限公司 刻蚀工艺监控信号的处理方法和刻蚀终点控制方法

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US2933675A (en) * 1956-12-28 1960-04-19 Gen Dynamics Corp Chemical milling control
US3163568A (en) * 1961-02-15 1964-12-29 Sylvania Electric Prod Method of treating semiconductor devices
US3553052A (en) * 1965-10-24 1971-01-05 Louis A Scholz Etching control device
DE2304933A1 (de) * 1973-02-01 1974-08-08 Siemens Ag Verfahren zur automatischen kontrolle und regelung von aetzmaschinen
US3874959A (en) * 1973-09-21 1975-04-01 Ibm Method to establish the endpoint during the delineation of oxides on semiconductor surfaces and apparatus therefor
US3964956A (en) * 1974-10-24 1976-06-22 General Dynamics Corporation System for maintaining uniform copper etching efficiency
JPS5462929A (en) * 1977-10-28 1979-05-21 Sumitomo Electric Ind Ltd Surface treating method for aluminum and aluminum alloy
JPS5546568A (en) * 1978-09-30 1980-04-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of fabricating semicondcuctor device
JPS56501226A (2) * 1979-08-30 1981-08-27
US4338157A (en) * 1979-10-12 1982-07-06 Sigma Corporation Method for forming electrical connecting lines by monitoring the etch rate during wet etching
NL8201558A (nl) * 1982-04-14 1983-11-01 Philips Nv Inrichting voor het continu meten van de capaciteit van folie voor elektrolytkondensatoren.
JPS59113626A (ja) * 1982-12-20 1984-06-30 Tdk Corp パタ−ン化された金属層を形成する方法
JPS5952838A (ja) * 1982-09-20 1984-03-27 Mitsubishi Electric Corp 基板エツチング法
DE3581010D1 (de) * 1984-07-09 1991-02-07 Sigma Corp Entwicklung-endpunktnachweisverfahren.
US4989157A (en) * 1985-01-22 1991-01-29 The Boeing Company Automated chemical milling controller
JP2509572B2 (ja) * 1985-08-19 1996-06-19 株式会社東芝 パタ−ン形成方法及び装置
HU199020B (en) * 1987-05-04 1989-12-28 Magyar Tudomanyos Akademia Method and apparatus for measuring the layer thickness of semiconductor layer structures
US4793895A (en) * 1988-01-25 1988-12-27 Ibm Corporation In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection
EP0354266B1 (de) * 1988-08-12 1993-10-20 International Business Machines Corporation Verfahren und Vorrichtung zum Ätzen eines zumindest Teilweise aus Metall bestehenden Ätzguts
JPH0273634A (ja) * 1988-09-08 1990-03-13 Nissan Motor Co Ltd 半導体基板のエッチング方法
DE3832660A1 (de) * 1988-09-26 1990-03-29 Texas Instruments Deutschland Verfahren und vorrichtung zum abaetzen einer auf einem substrat angebrachten elektrisch leitenden schicht
US5081421A (en) * 1990-05-01 1992-01-14 At&T Bell Laboratories In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection
US5198072A (en) * 1990-07-06 1993-03-30 Vlsi Technology, Inc. Method and apparatus for detecting imminent end-point when etching dielectric layers in a plasma etch system
JP3128812B2 (ja) * 1990-08-13 2001-01-29 日本電気株式会社 ウェットエッチング装置
US5338390A (en) * 1992-12-04 1994-08-16 International Business Machines Corporation Contactless real-time in-situ monitoring of a chemical etching process

Also Published As

Publication number Publication date
US5582746A (en) 1996-12-10
EP0690488A2 (en) 1996-01-03
JP3149334B2 (ja) 2001-03-26
EP0690488A3 (en) 1998-01-07
JPH0817791A (ja) 1996-01-19
US5500073A (en) 1996-03-19

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