TW298704B - - Google Patents

Download PDF

Info

Publication number
TW298704B
TW298704B TW084102573A TW84102573A TW298704B TW 298704 B TW298704 B TW 298704B TW 084102573 A TW084102573 A TW 084102573A TW 84102573 A TW84102573 A TW 84102573A TW 298704 B TW298704 B TW 298704B
Authority
TW
Taiwan
Prior art keywords
substrate
etching
main surface
wafer
gas
Prior art date
Application number
TW084102573A
Other languages
English (en)
Chinese (zh)
Inventor
Makoto Hasegawa
Original Assignee
Tokyo Electron Co Ltd
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP03364594A external-priority patent/JP3257741B2/ja
Application filed by Tokyo Electron Co Ltd, Toshiba Co Ltd filed Critical Tokyo Electron Co Ltd
Application granted granted Critical
Publication of TW298704B publication Critical patent/TW298704B/zh

Links

Landscapes

  • Drying Of Semiconductors (AREA)
TW084102573A 1993-12-29 1995-03-17 TW298704B (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34983293 1993-12-29
JP03364594A JP3257741B2 (ja) 1994-03-03 1994-03-03 プラズマエッチング装置及び方法

Publications (1)

Publication Number Publication Date
TW298704B true TW298704B (fr) 1997-02-21

Family

ID=51565514

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084102573A TW298704B (fr) 1993-12-29 1995-03-17

Country Status (1)

Country Link
TW (1) TW298704B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105977126A (zh) * 2011-05-31 2016-09-28 应用材料公司 用于等离子体蚀刻腔室的孔部件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105977126A (zh) * 2011-05-31 2016-09-28 应用材料公司 用于等离子体蚀刻腔室的孔部件

Similar Documents

Publication Publication Date Title
US5382311A (en) Stage having electrostatic chuck and plasma processing apparatus using same
TW475912B (en) Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system
TW564495B (en) Plasma treatment apparatus
KR100745942B1 (ko) 유도 결합 플라즈마 처리 장치
US5683537A (en) Plasma processing apparatus
TW578449B (en) Plasma generating apparatus having an electrostatic shield
TWI588866B (zh) 電漿處理設備用之可動式腔室襯墊電漿侷限隔屏組合
TW494490B (en) Integrator and plasma processing apparatus
JP4610191B2 (ja) プラズマを生成するための手順および装置
TW201012311A (en) Plasma generating apparatus and plasma processing apparatus
TW200926331A (en) Plasma processing apparatus of batch type
JP2000323456A (ja) プラズマ処理装置およびそれに用いられる電極
TW201207935A (en) Movable ground ring for a plasma processing chamber
JPH01251735A (ja) 静電チャック装置
JP6804392B2 (ja) プラズマ処理装置及びガスシャワーヘッド
TW518690B (en) Plasma processing apparatus and its electrode plate, its electrode supporting body and its shield ring
TW200947603A (en) Substrate mounting stand for plasma processing device, plasma processing device, and insulating coating deposition method
JPH09320798A (ja) プラズマ処理装置
JPH04279044A (ja) 試料保持装置
KR20220008223A (ko) 기판 이탈 방법 및 플라즈마 처리 장치
JP3276023B2 (ja) プラズマ処理装置の制御方法
TW298704B (fr)
TW406346B (en) Method and apparatus for cooling a workpiece using an electrostatic chuck
JP4566373B2 (ja) 酸化膜エッチング方法
JPH07106096A (ja) プラズマ処理装置