TW308700B - - Google Patents

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Info

Publication number: TW308700B
Authority: TW; Taiwan
Prior art keywords: substrate; wafer; patent application; solid; base
Prior art date: 1992-09-25

Application number

TW83106423A

Other languages

English (en)

Chinese (zh)

Original Assignee

Avx Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1992-09-25

Filing date

1994-07-14

Publication date

1997-06-21

1992-09-25 Priority claimed from US07/951,128 external-priority patent/US5357399A/en

1994-07-14 Application filed by Avx Corp filed Critical Avx Corp

1997-06-21 Application granted granted Critical

1997-06-21 Publication of TW308700B publication Critical patent/TW308700B/zh

Links

239000003990 capacitor Substances 0.000 claims description 110
239000000758 substrate Substances 0.000 claims description 65
238000000034 method Methods 0.000 claims description 53
239000007787 solid Substances 0.000 claims description 46
229910052751 metal Inorganic materials 0.000 claims description 29
239000002184 metal Substances 0.000 claims description 29
238000004519 manufacturing process Methods 0.000 claims description 28
239000011347 resin Substances 0.000 claims description 21
229920005989 resin Polymers 0.000 claims description 21
230000000875 corresponding effect Effects 0.000 claims description 20
239000000843 powder Substances 0.000 claims description 19
238000005520 cutting process Methods 0.000 claims description 15
239000002245 particle Substances 0.000 claims description 13
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
239000010931 gold Substances 0.000 claims description 10
229910052737 gold Inorganic materials 0.000 claims description 10
239000013078 crystal Substances 0.000 claims description 9
239000000463 material Substances 0.000 claims description 7
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
230000008901 benefit Effects 0.000 claims description 3
230000002079 cooperative effect Effects 0.000 claims description 3
229910052715 tantalum Inorganic materials 0.000 claims description 3
238000002360 preparation method Methods 0.000 claims description 2
239000002699 waste material Substances 0.000 claims description 2
235000012431 wafers Nutrition 0.000 claims 20
239000010410 layer Substances 0.000 claims 6
238000005253 cladding Methods 0.000 claims 2
239000011247 coating layer Substances 0.000 claims 2
239000004744 fabric Substances 0.000 claims 2
239000002923 metal particle Substances 0.000 claims 2
239000012255 powdered metal Substances 0.000 claims 2
PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
SUDBRAWXUGTELR-HPFNVAMJSA-N 5-[[(2r,3r,4s,5s,6r)-3,4,5-trihydroxy-6-(hydroxymethyl)oxan-2-yl]oxymethyl]-1h-pyrimidine-2,4-dione Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1OCC1=CNC(=O)NC1=O SUDBRAWXUGTELR-HPFNVAMJSA-N 0.000 claims 1
241000283973 Oryctolagus cuniculus Species 0.000 claims 1
206010035148 Plague Diseases 0.000 claims 1
241000607479 Yersinia pestis Species 0.000 claims 1
238000010276 construction Methods 0.000 claims 1
238000004898 kneading Methods 0.000 claims 1
239000010985 leather Substances 0.000 claims 1
230000002093 peripheral effect Effects 0.000 claims 1
239000002689 soil Substances 0.000 claims 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
238000007743 anodising Methods 0.000 description 9
239000002131 composite material Substances 0.000 description 7
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
239000000853 adhesive Substances 0.000 description 6
239000007788 liquid Substances 0.000 description 6
230000008569 process Effects 0.000 description 6
229910052709 silver Inorganic materials 0.000 description 6
239000004332 silver Substances 0.000 description 6
238000005245 sintering Methods 0.000 description 6
239000000243 solution Substances 0.000 description 6
230000001070 adhesive effect Effects 0.000 description 5
NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
238000002048 anodisation reaction Methods 0.000 description 4
238000007789 sealing Methods 0.000 description 4
238000003466 welding Methods 0.000 description 4
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
229910052799 carbon Inorganic materials 0.000 description 3
239000011248 coating agent Substances 0.000 description 3
238000000576 coating method Methods 0.000 description 3
238000005516 engineering process Methods 0.000 description 3
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
239000004593 Epoxy Substances 0.000 description 2
PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
229910000147 aluminium phosphate Inorganic materials 0.000 description 2
239000011230 binding agent Substances 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
239000000919 ceramic Substances 0.000 description 2
239000003985 ceramic capacitor Substances 0.000 description 2
230000005611 electricity Effects 0.000 description 2
238000010438 heat treatment Methods 0.000 description 2
238000002347 injection Methods 0.000 description 2
239000007924 injection Substances 0.000 description 2
238000009434 installation Methods 0.000 description 2
229910052748 manganese Inorganic materials 0.000 description 2
239000011572 manganese Substances 0.000 description 2
239000011159 matrix material Substances 0.000 description 2
150000002739 metals Chemical class 0.000 description 2
229910052750 molybdenum Inorganic materials 0.000 description 2
239000011733 molybdenum Substances 0.000 description 2
238000000465 moulding Methods 0.000 description 2
229910052758 niobium Inorganic materials 0.000 description 2
239000010955 niobium Substances 0.000 description 2
GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
238000010008 shearing Methods 0.000 description 2
241001331845 Equus asinus x caballus Species 0.000 description 1
229910002651 NO3 Inorganic materials 0.000 description 1
NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
VYRNMWDESIRGOS-UHFFFAOYSA-N [Mo].[Au] Chemical compound [Mo].[Au] VYRNMWDESIRGOS-UHFFFAOYSA-N 0.000 description 1
229910045601 alloy Inorganic materials 0.000 description 1
239000000956 alloy Substances 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
-1 banknotes Chemical compound 0.000 description 1
230000004888 barrier function Effects 0.000 description 1
230000008859 change Effects 0.000 description 1
238000006243 chemical reaction Methods 0.000 description 1
230000035606 childbirth Effects 0.000 description 1
239000011362 coarse particle Substances 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
230000006835 compression Effects 0.000 description 1
238000007906 compression Methods 0.000 description 1
238000000151 deposition Methods 0.000 description 1
239000003989 dielectric material Substances 0.000 description 1
239000003792 electrolyte Substances 0.000 description 1
239000008151 electrolyte solution Substances 0.000 description 1
230000008030 elimination Effects 0.000 description 1
238000003379 elimination reaction Methods 0.000 description 1
239000012634 fragment Substances 0.000 description 1
238000007654 immersion Methods 0.000 description 1
238000005470 impregnation Methods 0.000 description 1
239000011810 insulating material Substances 0.000 description 1
230000000968 intestinal effect Effects 0.000 description 1
MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
230000008018 melting Effects 0.000 description 1
238000002844 melting Methods 0.000 description 1
239000000203 mixture Substances 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
229910017604 nitric acid Inorganic materials 0.000 description 1
230000010287 polarization Effects 0.000 description 1
229920000642 polymer Polymers 0.000 description 1
229910052573 porcelain Inorganic materials 0.000 description 1
239000002994 raw material Substances 0.000 description 1
239000003566 sealing material Substances 0.000 description 1
238000000926 separation method Methods 0.000 description 1
229910000679 solder Inorganic materials 0.000 description 1
125000006850 spacer group Chemical group 0.000 description 1
238000010561 standard procedure Methods 0.000 description 1
238000003860 storage Methods 0.000 description 1
239000000126 substance Substances 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1
239000010936 titanium Substances 0.000 description 1
238000002054 transplantation Methods 0.000 description 1
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
229910052721 tungsten Inorganic materials 0.000 description 1
239000010937 tungsten Substances 0.000 description 1
238000007740 vapor deposition Methods 0.000 description 1

Landscapes

Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

TW83106423A 1992-09-25 1994-07-14 TW308700B (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US07/951,128 US5357399A (en)	1992-09-25	1992-09-25	Mass production method for the manufacture of surface mount solid state capacitor and resulting capacitor

Publications (1)

Publication Number	Publication Date
TW308700B true TW308700B (de)	1997-06-21

Family

ID=51566227

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW83106423A TW308700B (de)	1992-09-25	1994-07-14

Country Status (1)

Country	Link
TW (1)	TW308700B (de)

1994
- 1994-07-14 TW TW83106423A patent/TW308700B/zh active

Publication	Publication Date	Title
US5357399A (en)	1994-10-18	Mass production method for the manufacture of surface mount solid state capacitor and resulting capacitor
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