TW308736B - - Google Patents

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Publication number
TW308736B
TW308736B TW085104321A TW85104321A TW308736B TW 308736 B TW308736 B TW 308736B TW 085104321 A TW085104321 A TW 085104321A TW 85104321 A TW85104321 A TW 85104321A TW 308736 B TW308736 B TW 308736B
Authority
TW
Taiwan
Prior art keywords
conductive
aforementioned
insulating layer
area
connection hole
Prior art date
Application number
TW085104321A
Other languages
English (en)
Chinese (zh)
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW308736B publication Critical patent/TW308736B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW085104321A 1995-02-28 1996-04-12 TW308736B (2)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7064905A JPH08236622A (ja) 1995-02-28 1995-02-28 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
TW308736B true TW308736B (2) 1997-06-21

Family

ID=13271550

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085104321A TW308736B (2) 1995-02-28 1996-04-12

Country Status (3)

Country Link
JP (1) JPH08236622A (2)
KR (1) KR100474953B1 (2)
TW (1) TW308736B (2)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100578117B1 (ko) * 1998-12-21 2006-09-27 삼성전자주식회사 반도체 장치의 배선 형성 방법
KR100727449B1 (ko) * 2000-09-25 2007-06-13 하이닉스 세미컨덕터 매뉴팩쳐링 아메리카 인코포레이티드 고도전성 게이트, 로컬 인터커넥트 또는 커패시터 노드를 갖는 집적 장치
KR100868607B1 (ko) * 2008-02-21 2008-11-13 가부시키가이샤 히타치세이사쿠쇼 반도체 장치 및 그 제조 방법
KR101885766B1 (ko) * 2016-05-10 2018-08-06 한국과학기술원 스트레인 센서 및 이의 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833096A (en) * 1988-01-19 1989-05-23 Atmel Corporation EEPROM fabrication process
JP2892443B2 (ja) * 1990-06-13 1999-05-17 沖電気工業株式会社 半導体装置の製造方法
JP3123092B2 (ja) * 1991-03-06 2001-01-09 日本電気株式会社 半導体装置の製造方法
JPH05343401A (ja) * 1992-06-12 1993-12-24 Fujitsu Ltd 半導体装置
JPH06163711A (ja) * 1992-11-20 1994-06-10 Mitsubishi Electric Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
KR960032687A (ko) 1996-09-17
JPH08236622A (ja) 1996-09-13
KR100474953B1 (ko) 2005-05-18

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees