TW310432B - - Google Patents

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Info

Publication number: TW310432B
Authority: TW; Taiwan
Prior art keywords: volatile; voltage; memory; many; cell
Prior art date: 1995-09-29

Application number

TW085111684A

Other languages

English (en)

Chinese (zh)

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1995-09-29

Filing date

1996-09-24

Publication date

1997-07-11

1996-09-24 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1997-07-11 Application granted granted Critical

1997-07-11 Publication of TW310432B publication Critical patent/TW310432B/zh

Links

210000004027 cell Anatomy 0.000 claims description 213
230000015654 memory Effects 0.000 claims description 162
239000004065 semiconductor Substances 0.000 claims description 49
239000013078 crystal Substances 0.000 claims description 10
239000000463 material Substances 0.000 claims description 10
238000012545 processing Methods 0.000 claims description 7
230000008859 change Effects 0.000 claims description 4
241000252254 Catostomidae Species 0.000 claims 2
210000000227 basophil cell of anterior lobe of hypophysis Anatomy 0.000 claims 2
230000008672 reprogramming Effects 0.000 claims 1
230000009471 action Effects 0.000 description 49
238000000034 method Methods 0.000 description 32
238000001514 detection method Methods 0.000 description 20
239000000872 buffer Substances 0.000 description 13
238000012795 verification Methods 0.000 description 9
XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 7
230000000875 corresponding effect Effects 0.000 description 7
238000010586 diagram Methods 0.000 description 7
238000009434 installation Methods 0.000 description 6
210000003625 skull Anatomy 0.000 description 6
238000006243 chemical reaction Methods 0.000 description 5
230000002079 cooperative effect Effects 0.000 description 5
238000010291 electrical method Methods 0.000 description 5
230000000295 complement effect Effects 0.000 description 4
210000000006 pectoral fin Anatomy 0.000 description 4
230000004913 activation Effects 0.000 description 3
238000009792 diffusion process Methods 0.000 description 3
230000000694 effects Effects 0.000 description 3
230000005611 electricity Effects 0.000 description 3
239000012535 impurity Substances 0.000 description 3
239000010410 layer Substances 0.000 description 3
QHGUCRYDKWKLMG-UHFFFAOYSA-N octopamine Chemical compound NCC(O)C1=CC=C(O)C=C1 QHGUCRYDKWKLMG-UHFFFAOYSA-N 0.000 description 3
229960001576 octopamine Drugs 0.000 description 3
230000003071 parasitic effect Effects 0.000 description 3
230000008569 process Effects 0.000 description 3
241000282313 Hyaenidae Species 0.000 description 2
210000004556 brain Anatomy 0.000 description 2
210000002858 crystal cell Anatomy 0.000 description 2
239000012634 fragment Substances 0.000 description 2
239000012528 membrane Substances 0.000 description 2
JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 2
230000004044 response Effects 0.000 description 2
239000000758 substrate Substances 0.000 description 2
108090000790 Enzymes Proteins 0.000 description 1
102000004190 Enzymes Human genes 0.000 description 1
241000272168 Laridae Species 0.000 description 1
241000270666 Testudines Species 0.000 description 1
230000002745 absorbent Effects 0.000 description 1
239000002250 absorbent Substances 0.000 description 1
230000002411 adverse Effects 0.000 description 1
238000003491 array Methods 0.000 description 1
239000011230 binding agent Substances 0.000 description 1
239000004020 conductor Substances 0.000 description 1
239000013256 coordination polymer Substances 0.000 description 1
238000010168 coupling process Methods 0.000 description 1
238000005859 coupling reaction Methods 0.000 description 1
238000003745 diagnosis Methods 0.000 description 1
238000010304 firing Methods 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
239000011229 interlayer Substances 0.000 description 1
230000014759 maintenance of location Effects 0.000 description 1
239000002184 metal Substances 0.000 description 1
239000008267 milk Substances 0.000 description 1
210000004080 milk Anatomy 0.000 description 1
235000013336 milk Nutrition 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
108090000623 proteins and genes Proteins 0.000 description 1
230000009467 reduction Effects 0.000 description 1
238000012827 research and development Methods 0.000 description 1
230000000630 rising effect Effects 0.000 description 1
238000000926 separation method Methods 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
238000012360 testing method Methods 0.000 description 1

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories

Landscapes

Read Only Memory (AREA)
Semiconductor Memories (AREA)

TW085111684A 1995-09-29 1996-09-24 TW310432B (ja)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP25240095A JPH0991978A (ja)	1995-09-29	1995-09-29	半導体不揮発性記憶装置およびそれを用いたコンピュータシステム

Publications (1)

Publication Number	Publication Date
TW310432B true TW310432B (ja)	1997-07-11

Family

ID=17236815

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW085111684A TW310432B (ja)	1995-09-29	1996-09-24

Country Status (3)

Country	Link
JP (1)	JPH0991978A (ja)
KR (1)	KR970017668A (ja)
TW (1)	TW310432B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2954165B1 (ja)	1998-05-20	1999-09-27	日本電気アイシーマイコンシステム株式会社	半導体装置
JP2000228094A (ja)	1999-02-04	2000-08-15	Toshiba Corp	不揮発性半導体記憶装置
JP3940570B2 (ja) *	2001-07-06	2007-07-04	株式会社東芝	半導体記憶装置
JP2007257829A (ja) *	2001-10-24	2007-10-04	Toshiba Corp	半導体装置及びその動作方法
KR100766241B1 (ko) *	2006-05-10	2007-10-10	주식회사 하이닉스반도체	플래쉬 메모리 소자의 프로그램 방법
JP2010231887A (ja) *	2010-07-20	2010-10-14	Toshiba Corp	不揮発性半導体メモリ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3142335B2 (ja) *	1991-09-24	2001-03-07	株式会社東芝	不揮発性半導体記憶装置
JP3226677B2 (ja) *	1993-09-21	2001-11-05	株式会社東芝	不揮発性半導体記憶装置
JP3451118B2 (ja) *	1993-12-15	2003-09-29	株式会社日立製作所	半導体不揮発性記憶装置
KR0120549B1 (ko) *	1993-12-31	1997-10-20	김주용	불휘발성 메모리 소자의 이레이즈 검증장치

1995
- 1995-09-29 JP JP25240095A patent/JPH0991978A/ja active Pending
1996
- 1996-09-23 KR KR1019960041545A patent/KR970017668A/ko not_active Ceased
- 1996-09-24 TW TW085111684A patent/TW310432B/zh active

Also Published As

Publication number	Publication date
JPH0991978A (ja)	1997-04-04
KR970017668A (ko)	1997-04-30

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