TW329521B - Split-gate type transistor, its manufacturing method and non-volatile semiconductor memory. - Google Patents

Split-gate type transistor, its manufacturing method and non-volatile semiconductor memory.

Info

Publication number
TW329521B
TW329521B TW086103230A TW86103230A TW329521B TW 329521 B TW329521 B TW 329521B TW 086103230 A TW086103230 A TW 086103230A TW 86103230 A TW86103230 A TW 86103230A TW 329521 B TW329521 B TW 329521B
Authority
TW
Taiwan
Prior art keywords
split
manufacturing
semiconductor memory
type transistor
gate type
Prior art date
Application number
TW086103230A
Other languages
English (en)
Inventor
Kaoru Takeda
Takayuki Umida
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Application granted granted Critical
Publication of TW329521B publication Critical patent/TW329521B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/90—MOSFET type gate sidewall insulating spacer

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW086103230A 1996-03-29 1997-03-15 Split-gate type transistor, its manufacturing method and non-volatile semiconductor memory. TW329521B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7714796 1996-03-29
JP08258980A JP3081543B2 (ja) 1996-03-29 1996-09-30 スプリットゲート型トランジスタ、スプリットゲート型トランジスタの製造方法、不揮発性半導体メモリ

Publications (1)

Publication Number Publication Date
TW329521B true TW329521B (en) 1998-04-11

Family

ID=26418244

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086103230A TW329521B (en) 1996-03-29 1997-03-15 Split-gate type transistor, its manufacturing method and non-volatile semiconductor memory.

Country Status (4)

Country Link
US (1) US5939749A (zh)
JP (1) JP3081543B2 (zh)
KR (1) KR100453136B1 (zh)
TW (1) TW329521B (zh)

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US6525371B2 (en) * 1999-09-22 2003-02-25 International Business Machines Corporation Self-aligned non-volatile random access memory cell and process to make the same
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US6627946B2 (en) * 2000-09-20 2003-09-30 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with control gates protruding portions
US6868015B2 (en) * 2000-09-20 2005-03-15 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with control gate spacer portions
US6727545B2 (en) * 2000-09-20 2004-04-27 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with low resistance source regions and high source coupling
KR100437470B1 (ko) * 2001-01-31 2004-06-23 삼성전자주식회사 플래쉬 메모리 셀을 갖는 반도체 장치 및 그 제조 방법
US6841813B2 (en) * 2001-08-13 2005-01-11 Matrix Semiconductor, Inc. TFT mask ROM and method for making same
JP4065671B2 (ja) * 2001-08-31 2008-03-26 シャープ株式会社 不揮発性半導体記憶装置、その製造方法及びその動作方法
KR100455379B1 (ko) * 2002-02-21 2004-11-06 삼성전자주식회사 플래시 메모리 장치의 제조방법
KR100634162B1 (ko) * 2002-05-15 2006-10-17 삼성전자주식회사 스플리트 게이트 메모리 장치 및 그 제조방법
US6858494B2 (en) * 2002-08-20 2005-02-22 Taiwan Semiconductor Manufacturing Company Structure and fabricating method with self-aligned bit line contact to word line in split gate flash
KR100509828B1 (ko) * 2002-09-19 2005-08-24 동부아남반도체 주식회사 스플리트형 플래시 메모리 셀의 게이트 전극 및 그 제조방법
US6855602B2 (en) * 2003-03-27 2005-02-15 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a box shaped polygate
KR100539247B1 (ko) * 2004-02-04 2005-12-27 삼성전자주식회사 스플릿 게이트형 비휘발성 반도체 메모리 소자 및 그제조방법
KR100594262B1 (ko) * 2004-03-05 2006-06-30 삼성전자주식회사 바이어스 회로, 이를 구비한 고체 촬상 소자 및 그 제조방법
KR100525005B1 (ko) * 2004-05-06 2005-10-31 삼성전자주식회사 스플릿 게이트형 플래쉬 메모리 소자 및 그 제조방법
US7315056B2 (en) * 2004-06-07 2008-01-01 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with program/erase and select gates
KR100591768B1 (ko) * 2004-07-12 2006-06-26 삼성전자주식회사 메모리 소자들 및 그 형성 방법들
JP2006032950A (ja) * 2004-07-12 2006-02-02 Samsung Electronics Co Ltd メモリ素子及びその形成方法
KR100654359B1 (ko) * 2005-08-25 2006-12-08 삼성전자주식회사 비휘발성 메모리 소자 제조 방법
JP4845110B2 (ja) 2006-08-17 2011-12-28 ルネサスエレクトロニクス株式会社 スプリットゲート型不揮発性メモリとその製造方法
US7641226B2 (en) * 2006-11-01 2010-01-05 Autoliv Development Ab Side airbag module with an internal guide fin
US8138524B2 (en) 2006-11-01 2012-03-20 Silicon Storage Technology, Inc. Self-aligned method of forming a semiconductor memory array of floating memory cells with source side erase, and a memory array made thereby
US7692972B1 (en) 2008-07-22 2010-04-06 Actel Corporation Split gate memory cell for programmable circuit device
US9252149B2 (en) 2012-04-30 2016-02-02 Hewlett-Packard Development Company, L.P. Device including active floating gate region area that is smaller than channel area
US9627395B2 (en) 2015-02-11 2017-04-18 Sandisk Technologies Llc Enhanced channel mobility three-dimensional memory structure and method of making thereof
US9478495B1 (en) 2015-10-26 2016-10-25 Sandisk Technologies Llc Three dimensional memory device containing aluminum source contact via structure and method of making thereof
US10741451B2 (en) 2018-10-03 2020-08-11 Globalfoundries Inc. FinFET having insulating layers between gate and source/drain contacts
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JP2950212B2 (ja) * 1995-08-25 1999-09-20 日本電気株式会社 不揮発性半導体記憶装置およびその製造方法

Also Published As

Publication number Publication date
JPH09321156A (ja) 1997-12-12
JP3081543B2 (ja) 2000-08-28
US5939749A (en) 1999-08-17
KR970067936A (ko) 1997-10-13
KR100453136B1 (ko) 2004-12-31

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