TW356586B - Semiconductor device having conductive layer and manufacturing method thereof - Google Patents

Semiconductor device having conductive layer and manufacturing method thereof

Info

Publication number
TW356586B
TW356586B TW086115858A TW86115858A TW356586B TW 356586 B TW356586 B TW 356586B TW 086115858 A TW086115858 A TW 086115858A TW 86115858 A TW86115858 A TW 86115858A TW 356586 B TW356586 B TW 356586B
Authority
TW
Taiwan
Prior art keywords
conductive layer
semiconductor device
manufacturing
aforementioned
insulating layer
Prior art date
Application number
TW086115858A
Other languages
English (en)
Chinese (zh)
Inventor
Takahiro Kawasaki
Shigeru Harada
Hiroshi Tobimatsu
Original Assignee
Mitsubishi Electric Corp
Bishiten Semiconductor System Engineering Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, Bishiten Semiconductor System Engineering Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW356586B publication Critical patent/TW356586B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • H10W20/494—Fuses, i.e. interconnections changeable from conductive to non-conductive changeable by the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
TW086115858A 1997-06-13 1997-10-27 Semiconductor device having conductive layer and manufacturing method thereof TW356586B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9156724A JPH118305A (ja) 1997-06-13 1997-06-13 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW356586B true TW356586B (en) 1999-04-21

Family

ID=15633954

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086115858A TW356586B (en) 1997-06-13 1997-10-27 Semiconductor device having conductive layer and manufacturing method thereof

Country Status (4)

Country Link
US (1) US6046488A (2)
JP (1) JPH118305A (2)
DE (1) DE19750896B4 (2)
TW (1) TW356586B (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1750207B (zh) * 2004-09-13 2011-04-06 冲电气工业株式会社 半导体器件

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3049001B2 (ja) * 1998-02-12 2000-06-05 日本電気アイシーマイコンシステム株式会社 ヒューズ装置およびその製造方法
JP3239843B2 (ja) * 1998-05-11 2001-12-17 関西日本電気株式会社 半導体装置の製造方法
KR100351050B1 (ko) * 1999-11-26 2002-09-10 삼성전자 주식회사 반도체소자의 퓨즈부 형성방법
JP3977578B2 (ja) 2000-09-14 2007-09-19 株式会社東芝 半導体装置および製造方法
US7238620B1 (en) 2004-02-18 2007-07-03 National Semiconductor Corporation System and method for providing a uniform oxide layer over a laser trimmed fuse with a differential wet etch stop technique
DE102006046790B4 (de) * 2006-10-02 2014-01-02 Infineon Technologies Ag Integriertes Bauelement und Verfahren zum Trennen einer elektrisch leitfähigen Verbindung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5877246A (ja) * 1981-11-02 1983-05-10 Hitachi Ltd 多層配線構造の形成方法
US4853758A (en) * 1987-08-12 1989-08-01 American Telephone And Telegraph Company, At&T Bell Laboratories Laser-blown links
US5235205A (en) * 1991-04-23 1993-08-10 Harris Corporation Laser trimmed integrated circuit
US5374792A (en) * 1993-01-04 1994-12-20 General Electric Company Micromechanical moving structures including multiple contact switching system
US5365104A (en) * 1993-03-25 1994-11-15 Paradigm Technology, Inc. Oxynitride fuse protective/passivation film for integrated circuit having resistors
US5747868A (en) * 1995-06-26 1998-05-05 Alliance Semiconductor Corporation Laser fusible link structure for semiconductor devices
US5538924A (en) * 1995-09-05 1996-07-23 Vanguard International Semiconductor Co. Method of forming a moisture guard ring for integrated circuit applications
JPH09153552A (ja) * 1995-11-29 1997-06-10 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5652175A (en) * 1996-07-19 1997-07-29 Taiwan Semiconductor Manufacturing Company Ltd. Method for manufacturing a fuse structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1750207B (zh) * 2004-09-13 2011-04-06 冲电气工业株式会社 半导体器件

Also Published As

Publication number Publication date
DE19750896B4 (de) 2004-09-16
JPH118305A (ja) 1999-01-12
US6046488A (en) 2000-04-04
DE19750896A1 (de) 1998-12-17

Similar Documents

Publication Publication Date Title
TW358992B (en) Semiconductor device and method of fabricating the same
TW337035B (en) Semiconductor device and method of manufacturing the same
TW359008B (en) Double metal embedding
SG136795A1 (en) Semiconductor device and manufacturing method thereof
CA2249062A1 (en) Electronic device and method for fabricating the same
AU5844698A (en) Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate
AU2854099A (en) Semiconductor device and method for manufacturing the same, circuit substrate, and electronic device
SG84587A1 (en) Semiconductor device and method of formation
EP0782181A3 (en) Method of manufacturing VDMOS with a termination structure
TW373256B (en) A semiconductor device having discontinuous insulating regions and the manufacturing method thereof
SG129260A1 (en) Method of forming contact plug on silicide structure
TW429599B (en) Method for forming inductors on the semiconductor substrate
TW345742B (en) Method for producing integrated circuit capacitor
WO2002009178A3 (en) Semiconductor device and a process for forming the same
TW357418B (en) Column grid array for semiconductor packaging and method
EP0406025A3 (en) Method for fabricating a semiconductor device in which an insulating layer thereof has a uniform thickness
TW356586B (en) Semiconductor device having conductive layer and manufacturing method thereof
TW253992B (en) Dielectric as load resistor in 4T SRAM
TW346664B (en) Mixed-mode IC separated spacer structure and process for producing the same
WO2002101819A3 (en) Leaky, thermally conductive insulator material (ltcim) in a semiconductor-on-insulator (soi) structure
TW349251B (en) Semiconductor device and process for producing the same
TW353191B (en) Semiconductor device and process for producing the same
TW336351B (en) Metal wire structure and process for producing the same
TW351015B (en) Semiconductor and its manufacturing method the invention relats to a semiconductor and its manufacturing method
TW345720B (en) Self-aligned via structure and process for producing the same