TW363280B - Semiconductor apparatus and semiconductor laser and transistor apparatus with high electron transmitting rate - Google Patents

Semiconductor apparatus and semiconductor laser and transistor apparatus with high electron transmitting rate

Info

Publication number
TW363280B
TW363280B TW084113732A TW84113732A TW363280B TW 363280 B TW363280 B TW 363280B TW 084113732 A TW084113732 A TW 084113732A TW 84113732 A TW84113732 A TW 84113732A TW 363280 B TW363280 B TW 363280B
Authority
TW
Taiwan
Prior art keywords
aberrant
semiconductor
transistor
high electron
transmitting rate
Prior art date
Application number
TW084113732A
Other languages
English (en)
Inventor
Kenichi Ono
Takashi Motoda
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW363280B publication Critical patent/TW363280B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
TW084113732A 1995-10-11 1995-12-20 Semiconductor apparatus and semiconductor laser and transistor apparatus with high electron transmitting rate TW363280B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7263306A JPH09106946A (ja) 1995-10-11 1995-10-11 半導体装置，及び半導体レーザ，並びに高電子移動度トランジスタ装置

Publications (1)

Publication Number Publication Date
TW363280B true TW363280B (en) 1999-07-01

Family

ID=17387653

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084113732A TW363280B (en) 1995-10-11 1995-12-20 Semiconductor apparatus and semiconductor laser and transistor apparatus with high electron transmitting rate

Country Status (4)

Country Link
US (1) US5734670A (zh)
JP (1) JPH09106946A (zh)
KR (1) KR970024393A (zh)
TW (1) TW363280B (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3897186B2 (ja) * 1997-03-27 2007-03-22 シャープ株式会社 化合物半導体レーザ
JP2000252590A (ja) 1999-03-02 2000-09-14 Matsushita Electric Ind Co Ltd 半導体レーザ装置
US6271547B1 (en) 1999-08-06 2001-08-07 Raytheon Company Double recessed transistor with resistive layer
US6797994B1 (en) 2000-02-14 2004-09-28 Raytheon Company Double recessed transistor
AU2000264174A1 (en) * 2000-08-15 2002-02-25 Silex Systems Limited A semiconductor isotope superlattice
AUPR083300A0 (en) * 2000-10-17 2000-11-09 Silex Systems Limited An isotope structure formed in an indriect band gap semiconductor material
JP2002185077A (ja) * 2000-12-14 2002-06-28 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
JP2003086886A (ja) * 2001-07-02 2003-03-20 Sharp Corp 半導体レーザ装置およびその製造方法
US7736370B2 (en) * 2003-10-21 2010-06-15 Zimmer Spine, Inc. Method for interconnecting longitudinal members extending along a spinal column
KR100602973B1 (ko) * 2003-10-30 2006-07-20 한국과학기술연구원 스트레인 보상 다층양자우물을 이용하는 단일모드형 레이저 다이오드 및 그 제조 방법
US7558305B2 (en) * 2003-12-31 2009-07-07 Wisconsin Alumni Research Foundation Intersubband mid-infrared electroluminescent semiconductor devices
US7403552B2 (en) * 2006-03-10 2008-07-22 Wisconsin Alumni Research Foundation High efficiency intersubband semiconductor lasers
US7457338B2 (en) * 2006-04-19 2008-11-25 Wisconsin Alumni Research Foundation Quantum well lasers with strained quantum wells and dilute nitride barriers
US8373152B2 (en) * 2008-03-27 2013-02-12 Lg Innotek Co., Ltd. Light-emitting element and a production method therefor
JP2010239098A (ja) 2009-03-10 2010-10-21 Showa Denko Kk 発光ダイオード、発光ダイオードランプ及び照明装置
US20110188528A1 (en) * 2010-02-04 2011-08-04 Ostendo Technologies, Inc. High Injection Efficiency Polar and Non-Polar III-Nitrides Light Emitters
JP5684501B2 (ja) 2010-07-06 2015-03-11 昭和電工株式会社 発光ダイオード用エピタキシャルウェーハ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5011550A (en) * 1987-05-13 1991-04-30 Sharp Kabushiki Kaisha Laminated structure of compound semiconductors
JPH0521829A (ja) * 1991-07-12 1993-01-29 Hitachi Ltd 半導体装置
JP2707183B2 (ja) * 1992-03-12 1998-01-28 国際電信電話株式会社 ひずみ超格子を有する半導体デバイス
JPH0669589A (ja) * 1992-08-18 1994-03-11 Hitachi Ltd 半導体レーザ素子
KR960001467B1 (ko) * 1992-12-22 1996-01-30 한국 전기통신공사 초격자구조(superlattice)의 증폭층을 갖는 애벌란체 포토다이오드(APD:Avalanche Photodiode)
JP3500541B2 (ja) * 1994-02-15 2004-02-23 富士通株式会社 単電子トンネル接合装置の製造方法

Also Published As

Publication number Publication date
JPH09106946A (ja) 1997-04-22
KR970024393A (zh) 1997-05-30
US5734670A (en) 1998-03-31

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