TW366598B - Hybrid organic-inorganic semiconductor light emitting diodes - Google Patents

Hybrid organic-inorganic semiconductor light emitting diodes

Info

Publication number
TW366598B
TW366598B TW086118683A TW86118683A TW366598B TW 366598 B TW366598 B TW 366598B TW 086118683 A TW086118683 A TW 086118683A TW 86118683 A TW86118683 A TW 86118683A TW 366598 B TW366598 B TW 366598B
Authority
TW
Taiwan
Prior art keywords
light emitting
alq3
electroluminescent
layer
blue
Prior art date
Application number
TW086118683A
Other languages
English (en)
Inventor
Nestor A Bojarczuk Jr
Supratik Guha
Richard Alan Haight
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/788,509 external-priority patent/US5898185A/en
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW366598B publication Critical patent/TW366598B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/813Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512Wavelength conversion materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/321Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW086118683A 1997-01-24 1997-12-11 Hybrid organic-inorganic semiconductor light emitting diodes TW366598B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/788,509 US5898185A (en) 1997-01-24 1997-01-24 Hybrid organic-inorganic semiconductor light emitting diodes
US08/811,990 US5895932A (en) 1997-01-24 1997-03-05 Hybrid organic-inorganic semiconductor light emitting diodes

Publications (1)

Publication Number Publication Date
TW366598B true TW366598B (en) 1999-08-11

Family

ID=27120809

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086118683A TW366598B (en) 1997-01-24 1997-12-11 Hybrid organic-inorganic semiconductor light emitting diodes

Country Status (5)

Country Link
US (1) US5895932A (zh)
EP (1) EP0855751A3 (zh)
JP (1) JPH10214992A (zh)
KR (1) KR19980070127A (zh)
TW (1) TW366598B (zh)

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US7173370B2 (en) 2001-02-01 2007-02-06 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element and display device using the element
US7196360B2 (en) 2001-02-08 2007-03-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7332857B2 (en) 2001-01-18 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US7342355B2 (en) 2000-12-28 2008-03-11 Semiconductor Energy Laboratory Co., Ltd. Light emitting device having organic light emitting material with mixed layer
US7399991B2 (en) 2001-02-22 2008-07-15 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting device and display device using the same
US7432116B2 (en) 2001-02-21 2008-10-07 Semiconductor Energy Laboratory Co., Ltd. Method and apparatus for film deposition
US7550173B2 (en) 2001-01-17 2009-06-23 Semiconductor Energy Laboratory Co., Ltd. Luminescent device and method of manufacturing same
US7572522B2 (en) 2000-12-28 2009-08-11 Semiconductor Energy Laboratory Co., Ltd. Luminescent device
US7629025B2 (en) 2001-02-08 2009-12-08 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus and film formation method
US8354786B2 (en) 2001-02-01 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
TWI395508B (zh) * 2009-05-08 2013-05-01 Univ Cheng Shiu A display device having a photochromic unit
TWI401993B (zh) * 2009-05-08 2013-07-11 Univ Shu Te A display device having an ultraviolet light barrier layer
TWI425688B (zh) * 2006-12-04 2014-02-01 Idemitsu Kosan Co Organic thin film transistor and organic thin film emitting transistor

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JP3378465B2 (ja) * 1997-05-16 2003-02-17 株式会社東芝 発光装置
US6469322B1 (en) 1998-02-06 2002-10-22 General Electric Company Green emitting phosphor for use in UV light emitting diodes
US20080042554A1 (en) * 1998-05-18 2008-02-21 Kabushiki Kaisha Toshiba Image display device and light emission device
US6366018B1 (en) 1998-10-21 2002-04-02 Sarnoff Corporation Apparatus for performing wavelength-conversion using phosphors with light emitting diodes
US6404125B1 (en) 1998-10-21 2002-06-11 Sarnoff Corporation Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes
US6429583B1 (en) 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
TW455908B (en) * 1999-04-20 2001-09-21 Koninkl Philips Electronics Nv Lighting system
US6504301B1 (en) 1999-09-03 2003-01-07 Lumileds Lighting, U.S., Llc Non-incandescent lightbulb package using light emitting diodes
TW480744B (en) * 2000-03-14 2002-03-21 Lumileds Lighting Bv Light-emitting diode, lighting device and method of manufacturing same
US7233026B2 (en) * 2000-03-23 2007-06-19 Emagin Corporation Light extraction from color changing medium layers in organic light emitting diode devices
US6407411B1 (en) * 2000-04-13 2002-06-18 General Electric Company Led lead frame assembly
US6614103B1 (en) 2000-09-01 2003-09-02 General Electric Company Plastic packaging of LED arrays
JP3609709B2 (ja) * 2000-09-29 2005-01-12 株式会社シチズン電子 発光ダイオード
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US6518600B1 (en) 2000-11-17 2003-02-11 General Electric Company Dual encapsulation for an LED
KR100444498B1 (ko) * 2001-09-21 2004-08-16 엘지전자 주식회사 하이브리드 일렉트로 루미네센스 패널
US6888875B2 (en) * 2002-01-28 2005-05-03 Fuji Photo Film Co., Ltd. Light source apparatus equipped with a GaN type semiconductor laser, a method of eliminating stray light, and an image forming apparatus
US6858464B2 (en) * 2002-06-19 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing light emitting device
TWI276366B (en) 2002-07-09 2007-03-11 Semiconductor Energy Lab Production apparatus and method of producing a light-emitting device by using the same apparatus
KR100499129B1 (ko) 2002-09-02 2005-07-04 삼성전기주식회사 발광 다이오드 및 그 제조방법
CN100544533C (zh) * 2002-11-11 2009-09-23 株式会社半导体能源研究所 发光装置的制造方法
CN1723741B (zh) * 2002-12-12 2012-09-05 株式会社半导体能源研究所 发光装置、制造装置、成膜方法及清洁方法
TW591811B (en) 2003-01-02 2004-06-11 Epitech Technology Corp Ltd Color mixing light emitting diode
EP1473771A1 (en) * 2003-04-14 2004-11-03 Epitech Corporation, Ltd. Color mixing light emitting diode
US20040206970A1 (en) * 2003-04-16 2004-10-21 Martin Paul S. Alternating current light emitting device
JP2006524826A (ja) * 2003-04-28 2006-11-02 フワウサ, マイケル,ジュリアン 印、時計および他の機器の紫外線照明
JP2005072129A (ja) * 2003-08-21 2005-03-17 Nec Lighting Ltd 可視光線発光装置とその製造方法及び表示装置
US7250715B2 (en) * 2004-02-23 2007-07-31 Philips Lumileds Lighting Company, Llc Wavelength converted semiconductor light emitting devices
JP4168968B2 (ja) * 2004-04-26 2008-10-22 セイコーエプソン株式会社 有機el装置の製造方法
US11158768B2 (en) 2004-05-07 2021-10-26 Bruce H. Baretz Vacuum light emitting diode
KR100622824B1 (ko) * 2004-05-18 2006-09-14 엘지전자 주식회사 발광 다이오드의 패키지 및 그의 패키징 방법
TWI500072B (zh) * 2004-08-31 2015-09-11 學校法人上智學院 發光元件之製造方法
WO2006027730A1 (en) * 2004-09-09 2006-03-16 Philips Intellectual Property & Standards Gmbh Light-generating body
JP4384019B2 (ja) * 2004-12-08 2009-12-16 住友電気工業株式会社 ヘッドランプ
EP1670068A1 (en) * 2004-12-09 2006-06-14 SuperNova Optoelectronics Corporation Manufacturing method and device for white light emitting
JP2006278980A (ja) * 2005-03-30 2006-10-12 Sanyo Electric Co Ltd 半導体発光装置
KR100600373B1 (ko) * 2005-06-16 2006-07-18 엘지전자 주식회사 백색 발광 소자 및 이의 제조 방법
JP5284784B2 (ja) * 2005-07-14 2013-09-11 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ エレクトロルミネッセンス光源
EP1929532A1 (en) * 2005-09-19 2008-06-11 Koninklijke Philips Electronics N.V. Variable color light emitting device and method for controlling the same
US7295865B2 (en) * 2006-02-24 2007-11-13 Shay-Ping Thomas Wang Mobile device with cell array
DE102006024165A1 (de) 2006-05-23 2007-11-29 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Optoelektronischer Halbleiterchip mit einem Wellenlängenkonversionsstoff sowie optoelektronisches Halbleiterbauelement mit einem solchen Halbleiterchip und Verfahren zur Herstellung des optoelektronischen Halbleiterchips
KR101224723B1 (ko) * 2006-09-15 2013-01-21 삼성전자주식회사 유기 절연막 조성물, 이를 이용하여 제조된 유기 절연막 및유기 박막 트랜지스터
EP2206164A2 (en) * 2007-10-08 2010-07-14 3M Innovative Properties Company Light emitting diode with bonded semiconductor wavelength converter
WO2009081325A1 (en) * 2007-12-18 2009-07-02 Koninklijke Philips Electronics N.V. Light emitting diode
CN101933144B (zh) * 2008-01-31 2012-07-11 皇家飞利浦电子股份有限公司 发光器件
US8651723B2 (en) * 2008-02-21 2014-02-18 Koninklijke Philips N.V. LED light source with a luminescent layer
KR101154758B1 (ko) * 2008-11-18 2012-06-08 엘지이노텍 주식회사 반도체 발광소자 및 이를 구비한 발광소자 패키지
WO2011114253A1 (en) * 2010-03-16 2011-09-22 Koninklijke Philips Electronics N.V. Lighting apparatus
DE102010031755A1 (de) * 2010-07-21 2012-02-09 Merck Patent Gmbh Aluminat-Leuchtstoffe
KR101723540B1 (ko) * 2010-07-30 2017-04-05 엘지이노텍 주식회사 발광 소자 및 이를 갖는 발광 소자 패키지
DE102012106859B4 (de) * 2012-07-27 2019-01-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines mehrfarbigen LED-Displays
KR101933621B1 (ko) 2012-09-28 2018-12-28 삼성전자주식회사 소포를 분리하기 위한 조성물, 키트 및 이를 이용하여 소포를 분리하는 방법
CN103268736B (zh) * 2012-11-21 2015-09-16 上海天马微电子有限公司 一种量子点led显示面板及显示装置
US10381335B2 (en) * 2014-10-31 2019-08-13 ehux, Inc. Hybrid display using inorganic micro light emitting diodes (uLEDs) and organic LEDs (OLEDs)
CN107209418A (zh) * 2015-01-06 2017-09-26 康宁公司 无电极oled照明装置及使用所述装置的lcd系统
US10222681B2 (en) * 2016-11-07 2019-03-05 Limileds LLC Segmented light or optical power emitting device with fully converting wavelength converting material and methods of operation
KR102221426B1 (ko) * 2019-07-02 2021-03-02 셀로코아이엔티 주식회사 발광다이오드 표시장치 및 그 제조방법
KR102903021B1 (ko) * 2020-12-31 2025-12-22 삼성디스플레이 주식회사 표시 패널, 이를 구비한 표시 장치, 및 표시 패널의 제조방법
US12213331B2 (en) 2021-01-29 2025-01-28 The Regents Of The University Of Michigan Hybrid organic-inorganic light emitting device
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Cited By (24)

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US7572522B2 (en) 2000-12-28 2009-08-11 Semiconductor Energy Laboratory Co., Ltd. Luminescent device
US9209418B2 (en) 2000-12-28 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US7342355B2 (en) 2000-12-28 2008-03-11 Semiconductor Energy Laboratory Co., Ltd. Light emitting device having organic light emitting material with mixed layer
US9362518B2 (en) 2000-12-28 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US8310147B2 (en) 2000-12-28 2012-11-13 Semiconductor Energy Laboratory Co., Ltd. Luminescent device
US7915807B2 (en) 2000-12-28 2011-03-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US7579089B2 (en) 2000-12-28 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Luminescent device
US7550173B2 (en) 2001-01-17 2009-06-23 Semiconductor Energy Laboratory Co., Ltd. Luminescent device and method of manufacturing same
US7332857B2 (en) 2001-01-18 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US9608224B2 (en) 2001-02-01 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element and display device using the element
US7459722B2 (en) 2001-02-01 2008-12-02 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element and display device using the element
US7173370B2 (en) 2001-02-01 2007-02-06 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element and display device using the element
US7858977B2 (en) 2001-02-01 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element and display device using the element
US8354786B2 (en) 2001-02-01 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US7629025B2 (en) 2001-02-08 2009-12-08 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus and film formation method
US7456425B2 (en) 2001-02-08 2008-11-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8513648B2 (en) 2001-02-08 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7196360B2 (en) 2001-02-08 2007-03-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7432116B2 (en) 2001-02-21 2008-10-07 Semiconductor Energy Laboratory Co., Ltd. Method and apparatus for film deposition
US7663149B2 (en) 2001-02-22 2010-02-16 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting device and display device using the same
US7399991B2 (en) 2001-02-22 2008-07-15 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting device and display device using the same
TWI425688B (zh) * 2006-12-04 2014-02-01 Idemitsu Kosan Co Organic thin film transistor and organic thin film emitting transistor
TWI401993B (zh) * 2009-05-08 2013-07-11 Univ Shu Te A display device having an ultraviolet light barrier layer
TWI395508B (zh) * 2009-05-08 2013-05-01 Univ Cheng Shiu A display device having a photochromic unit

Also Published As

Publication number Publication date
JPH10214992A (ja) 1998-08-11
EP0855751A2 (en) 1998-07-29
EP0855751A3 (en) 1999-05-12
US5895932A (en) 1999-04-20
KR19980070127A (ko) 1998-10-26

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