TW367591B - Nanoporous dielectric films with graded density and process for making such films - Google Patents

Nanoporous dielectric films with graded density and process for making such films

Info

Publication number
TW367591B
TW367591B TW087105460A TW87105460A TW367591B TW 367591 B TW367591 B TW 367591B TW 087105460 A TW087105460 A TW 087105460A TW 87105460 A TW87105460 A TW 87105460A TW 367591 B TW367591 B TW 367591B
Authority
TW
Taiwan
Prior art keywords
films
making
nanoporous dielectric
graded density
dielectric films
Prior art date
Application number
TW087105460A
Other languages
English (en)
Chinese (zh)
Inventor
Stephen Wallace
Douglas M Smith
Teresa Ramos
Kevin H Roderick
James S Drage
Original Assignee
Allied Signal Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Allied Signal Inc filed Critical Allied Signal Inc
Application granted granted Critical
Publication of TW367591B publication Critical patent/TW367591B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6534—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/072—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/46—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers

Landscapes

  • Formation Of Insulating Films (AREA)
  • Laminated Bodies (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW087105460A 1997-04-17 1998-04-10 Nanoporous dielectric films with graded density and process for making such films TW367591B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US4326197P 1997-04-17 1997-04-17
US4647498A 1998-03-25 1998-03-25

Publications (1)

Publication Number Publication Date
TW367591B true TW367591B (en) 1999-08-21

Family

ID=26720199

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087105460A TW367591B (en) 1997-04-17 1998-04-10 Nanoporous dielectric films with graded density and process for making such films

Country Status (7)

Country Link
EP (1) EP0976153A1 (fr)
JP (1) JP2001520805A (fr)
KR (1) KR20010006553A (fr)
CN (1) CN1260908A (fr)
AU (1) AU6878598A (fr)
TW (1) TW367591B (fr)
WO (1) WO1998047177A1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6042994A (en) * 1998-01-20 2000-03-28 Alliedsignal Inc. Nanoporous silica dielectric films modified by electron beam exposure and having low dielectric constant and low water content
US6231989B1 (en) 1998-11-20 2001-05-15 Dow Corning Corporation Method of forming coatings
US6306778B1 (en) * 1999-08-31 2001-10-23 Tokyo Electron Limited Substrate processing method
US6465365B1 (en) * 2000-04-07 2002-10-15 Koninklijke Philips Electronics N.V. Method of improving adhesion of cap oxide to nanoporous silica for integrated circuit fabrication
US6495479B1 (en) 2000-05-05 2002-12-17 Honeywell International, Inc. Simplified method to produce nanoporous silicon-based films
KR100382702B1 (ko) * 2000-09-18 2003-05-09 주식회사 엘지화학 유기실리케이트 중합체의 제조방법
US6764809B2 (en) 2000-10-12 2004-07-20 North Carolina State University CO2-processes photoresists, polymers, and photoactive compounds for microlithography
US20020076543A1 (en) * 2000-12-19 2002-06-20 Sikonia John G. Layered dielectric nanoporous materials and methods of producing same
AU2002251769A1 (en) * 2002-01-03 2003-09-04 Honeywell International Inc. Nanoporous dielectric films with graded density and process for making such films
WO2003088344A1 (fr) * 2002-04-10 2003-10-23 Honeywell International, Inc. Dielectrique en silice poreuse, a faible teneur en metal, pour applications sur des circuits integres
US20050173803A1 (en) * 2002-09-20 2005-08-11 Victor Lu Interlayer adhesion promoter for low k materials
JP4493278B2 (ja) * 2003-02-20 2010-06-30 富士通株式会社 多孔性樹脂絶縁膜、電子装置及びそれらの製造方法
US7030468B2 (en) * 2004-01-16 2006-04-18 International Business Machines Corporation Low k and ultra low k SiCOH dielectric films and methods to form the same
JP2010131700A (ja) * 2008-12-04 2010-06-17 Sony Corp 微粒子構造体／基体複合部材及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0497966B1 (fr) * 1990-08-23 1997-10-29 THE REGENTS OF THE UNIVERSITY OF CALIFORNIA as represented by Lawrence Livermore National Laboratory PROCEDE DE PRODUCTION D'AEROGELS D'OXYDE DE METAL DE MASSES VOLUMIQUES INFERIEURES A 0,02 g/cm?3
EP0701277B1 (fr) * 1994-05-27 2008-02-27 Texas Instruments Incorporated Procédé d'interconnection utilisant un isolant poreux pour la réduction des capacités entre les lignes
US5494858A (en) * 1994-06-07 1996-02-27 Texas Instruments Incorporated Method for forming porous composites as a low dielectric constant layer with varying porosity distribution electronics applications

Also Published As

Publication number Publication date
KR20010006553A (ko) 2001-01-26
CN1260908A (zh) 2000-07-19
EP0976153A1 (fr) 2000-02-02
AU6878598A (en) 1998-11-11
JP2001520805A (ja) 2001-10-30
WO1998047177A1 (fr) 1998-10-22

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