TW367603B - Electrostatic discharge protection circuit for SRAM - Google Patents

Electrostatic discharge protection circuit for SRAM

Info

Publication number
TW367603B
TW367603B TW087109960A TW87109960A TW367603B TW 367603 B TW367603 B TW 367603B TW 087109960 A TW087109960 A TW 087109960A TW 87109960 A TW87109960 A TW 87109960A TW 367603 B TW367603 B TW 367603B
Authority
TW
Taiwan
Prior art keywords
electrostatic discharge
sram
drain
cmos
metal layer
Prior art date
Application number
TW087109960A
Other languages
English (en)
Inventor
Zhen-Cong Xu
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW087109960A priority Critical patent/TW367603B/zh
Priority to US09/164,926 priority patent/US6018183A/en
Application granted granted Critical
Publication of TW367603B publication Critical patent/TW367603B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/80—Arrangements for protection of devices protecting against overcurrent or overload, e.g. fuses or shunts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
TW087109960A 1998-06-20 1998-06-20 Electrostatic discharge protection circuit for SRAM TW367603B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW087109960A TW367603B (en) 1998-06-20 1998-06-20 Electrostatic discharge protection circuit for SRAM
US09/164,926 US6018183A (en) 1998-06-20 1998-10-01 Structure of manufacturing an electrostatic discharge protective circuit for SRAM

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW087109960A TW367603B (en) 1998-06-20 1998-06-20 Electrostatic discharge protection circuit for SRAM

Publications (1)

Publication Number Publication Date
TW367603B true TW367603B (en) 1999-08-21

Family

ID=21630451

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087109960A TW367603B (en) 1998-06-20 1998-06-20 Electrostatic discharge protection circuit for SRAM

Country Status (2)

Country Link
US (1) US6018183A (zh)
TW (1) TW367603B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6965165B2 (en) * 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
US6936531B2 (en) 1998-12-21 2005-08-30 Megic Corporation Process of fabricating a chip structure
JP2001339047A (ja) * 2000-05-29 2001-12-07 Matsushita Electric Ind Co Ltd 半導体装置
US7932603B2 (en) 2001-12-13 2011-04-26 Megica Corporation Chip structure and process for forming the same
US7076089B2 (en) * 2002-05-17 2006-07-11 Authentec, Inc. Fingerprint sensor having enhanced ESD protection and associated methods
JP3946623B2 (ja) * 2002-11-29 2007-07-18 本田技研工業株式会社 燃料電池車両の制御装置
US20040125533A1 (en) * 2002-12-25 2004-07-01 Tien-Hao Tang Esd protection device
EP1617473A1 (en) * 2004-07-13 2006-01-18 Koninklijke Philips Electronics N.V. Electronic device comprising an ESD device
KR20120047094A (ko) * 2010-11-03 2012-05-11 삼성전자주식회사 반도체 장치, 이의 제조 방법, 및 이를 포함하는 시스템들

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4786956A (en) * 1982-10-20 1988-11-22 North American Philips Corporation, Signetics Division Input protection device for integrated circuits
IT1186338B (it) * 1985-10-29 1987-11-26 Sgs Microelettronica Spa Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione
US5016080A (en) * 1988-10-07 1991-05-14 Exar Corporation Programmable die size continuous array
US5217916A (en) * 1989-10-03 1993-06-08 Trw Inc. Method of making an adaptive configurable gate array
US5436183A (en) * 1990-04-17 1995-07-25 National Semiconductor Corporation Electrostatic discharge protection transistor element fabrication process
US5365103A (en) * 1993-02-25 1994-11-15 Hewlett-Packard Company Punchthru ESD device along centerline of power pad
CA2115477A1 (en) * 1994-02-11 1995-08-12 Jonathan H. Orchard-Webb Esd input protection arrangement
US5646062A (en) * 1995-01-19 1997-07-08 United Microelectronics Corporation Method for ESD protection circuit with deep source diffusion
JP2845176B2 (ja) * 1995-08-10 1999-01-13 日本電気株式会社 半導体装置

Also Published As

Publication number Publication date
US6018183A (en) 2000-01-25

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