TW367623B - High Q value inductor and forming method thereof - Google Patents
High Q value inductor and forming method thereofInfo
- Publication number
- TW367623B TW367623B TW087102457A TW87102457A TW367623B TW 367623 B TW367623 B TW 367623B TW 087102457 A TW087102457 A TW 087102457A TW 87102457 A TW87102457 A TW 87102457A TW 367623 B TW367623 B TW 367623B
- Authority
- TW
- Taiwan
- Prior art keywords
- inductor
- insulation layer
- semiconductor substrate
- recession
- interlayer dielectric
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 5
- 238000009413 insulation Methods 0.000 abstract 4
- 239000010410 layer Substances 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 4
- 230000001939 inductive effect Effects 0.000 abstract 3
- 239000011229 interlayer Substances 0.000 abstract 3
- 239000003990 capacitor Substances 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
A kind of forming method for high Q value inductor which effectively reduce the substrate coupling and parasitic capacitors effect in the inductor and applied to standard processes of BiCMOS and CMOS. The method need be provided a semiconductor substrate on which formed planarized interlayer dielectric; then, employing photolithography to create a contact at the position of forming the inductor on the interlayer dielectric and employing the contact as the mask to etch a recession on the semiconductor substrate; lastly, employing thick insulation layer to cover all semiconductor substrate, including interlayer dielectric and recession and planarized insulation layer and forming the inductive coils on the insulation layer. For this kind of inductor, because the inductive coils and semiconductor substrate had increased the spaces by recession and insulation layer, the product can have better inductive characteristics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW087102457A TW367623B (en) | 1998-02-20 | 1998-02-20 | High Q value inductor and forming method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW087102457A TW367623B (en) | 1998-02-20 | 1998-02-20 | High Q value inductor and forming method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW367623B true TW367623B (en) | 1999-08-21 |
Family
ID=57941273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087102457A TW367623B (en) | 1998-02-20 | 1998-02-20 | High Q value inductor and forming method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW367623B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI412119B (en) * | 2003-08-22 | 2013-10-11 | 艾基爾系統股份有限公司 | Semiconductor device |
-
1998
- 1998-02-20 TW TW087102457A patent/TW367623B/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI412119B (en) * | 2003-08-22 | 2013-10-11 | 艾基爾系統股份有限公司 | Semiconductor device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |