TW384514B - Method for forming fine patterns of a semiconductor device - Google Patents

Method for forming fine patterns of a semiconductor device Download PDF

Info

Publication number
TW384514B
TW384514B TW085107600A TW85107600A TW384514B TW 384514 B TW384514 B TW 384514B TW 085107600 A TW085107600 A TW 085107600A TW 85107600 A TW85107600 A TW 85107600A TW 384514 B TW384514 B TW 384514B
Authority
TW
Taiwan
Prior art keywords
patent application
photoresist
item
scope
wafer
Prior art date
Application number
TW085107600A
Other languages
English (en)
Chinese (zh)
Inventor
Cheol Kyu Bok
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Application granted granted Critical
Publication of TW384514B publication Critical patent/TW384514B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4088—Processes for improving the resolution of the masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Weting (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW085107600A 1995-06-26 1996-06-25 Method for forming fine patterns of a semiconductor device TW384514B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950017482A KR0172237B1 (ko) 1995-06-26 1995-06-26 반도체 소자의 미세패턴 형성방법

Publications (1)

Publication Number Publication Date
TW384514B true TW384514B (en) 2000-03-11

Family

ID=19418327

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085107600A TW384514B (en) 1995-06-26 1996-06-25 Method for forming fine patterns of a semiconductor device

Country Status (6)

Country Link
JP (1) JPH09120942A (ja)
KR (1) KR0172237B1 (ja)
CN (1) CN1080929C (ja)
DE (1) DE19625595B4 (ja)
GB (1) GB2302759B (ja)
TW (1) TW384514B (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6656643B2 (en) 2001-02-20 2003-12-02 Chartered Semiconductor Manufacturing Ltd. Method of extreme ultraviolet mask engineering
US6582861B2 (en) 2001-03-16 2003-06-24 Applied Materials, Inc. Method of reshaping a patterned organic photoresist surface
KR100704838B1 (ko) * 2001-06-14 2007-04-09 삼성광주전자 주식회사 모타의 브러쉬 및 그 제조방법
KR100391001B1 (ko) * 2001-06-28 2003-07-12 주식회사 하이닉스반도체 금속 배선 형성 방법
JP4822239B2 (ja) * 2001-09-28 2011-11-24 Ｈｏｙａ株式会社 マスクブランク及びその製造方法、並びにマスクの製造方法
KR20030043724A (ko) * 2001-11-27 2003-06-02 엔이씨 일렉트로닉스 코포레이션 반도체 장치 제조 방법
KR100437614B1 (ko) * 2001-12-22 2004-06-30 주식회사 하이닉스반도체 반도체 소자의 금속 배선 형성 방법
US20100081065A1 (en) * 2008-10-01 2010-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and method of fabricating a photomask
CN104124205B (zh) * 2014-07-18 2018-03-16 华进半导体封装先导技术研发中心有限公司 一种rdl布线层的制备方法
CN105789475A (zh) * 2014-12-24 2016-07-20 固安翌光科技有限公司 一种有机电致发光器件及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141230A (ja) * 1983-02-02 1984-08-13 Mitsubishi Electric Corp パタ−ン形成方法
US4645562A (en) * 1985-04-29 1987-02-24 Hughes Aircraft Company Double layer photoresist technique for side-wall profile control in plasma etching processes
DE3850151T2 (de) * 1987-03-09 1995-01-12 Matsushita Electric Ind Co Ltd Verfahren zur Herstellung von Mustern.
US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
GB2245420A (en) * 1990-06-20 1992-01-02 Philips Electronic Associated A method of manufacturing a semiconductor device
EP0476840B1 (en) * 1990-08-30 1997-06-18 AT&T Corp. Process for fabricating a device
JP2913936B2 (ja) * 1991-10-08 1999-06-28 日本電気株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
CN1147147A (zh) 1997-04-09
GB2302759A (en) 1997-01-29
CN1080929C (zh) 2002-03-13
GB9613344D0 (en) 1996-08-28
GB2302759B (en) 2000-07-19
DE19625595A1 (de) 1997-01-02
JPH09120942A (ja) 1997-05-06
KR0172237B1 (ko) 1999-03-30
DE19625595B4 (de) 2005-10-20
KR970003413A (ko) 1997-01-28

Similar Documents

Publication Publication Date Title
US11467497B2 (en) Method of forming mask
TW384514B (en) Method for forming fine patterns of a semiconductor device
TW509976B (en) Method for forming a micro-pattern on a substrate by using capillary force
TW498407B (en) UV-enhanced silylation process to increase etch resistance of ultra thin resists
CN102007570B (zh) 用高蚀刻速率抗蚀剂掩膜进行蚀刻
KR100569536B1 (ko) Ｒｅｌａｃｓ 물질을 이용하여 패턴 붕괴를 방지하는 방법
JPH02309359A (ja) フォトリソグラフィー構造体の製造方法
TW477917B (en) Process for forming photoresist pattern by top surface imaging process
CN101523568A (zh) 用各向同性蚀刻来形成精细图案的方法
TW525238B (en) Method for patterning photoresist
KR20100134418A (ko) 스페이서 패터닝 공정을 이용한 콘택홀 형성 방법
JPS58115435A (ja) パタ−ン状フオトレジストの形成方法
TW593128B (en) Method for manufacturing three-dimensional microstructure
TW444341B (en) Manufacturing method of ultra-small opening
US20010029107A1 (en) Resist pattern forming method and semiconductor device manufacturing method
TW473459B (en) Method for forming transparent conductive film using chemically amplified resist
CN115903401B (zh) 基于刻蚀与双重光刻的超分辨率图案实现方法及装置
TW471024B (en) Lithography etching method
US3520687A (en) Etching of silicon dioxide by photosensitive solutions
TWI231959B (en) Process for the production of a semiconductor apparatus
Reuther et al. Mix and match of nanoimprint and UV lithography
JPH0943855A (ja) レジストパターン形成方法
JPH05326389A (ja) レジストパターンの形成方法
TW434724B (en) Method for removing oxide and nitride by a semi-enclosed etching system
JPH11153872A (ja) レジストパターン形成方法

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees