TW410530B - Powered shield source for high density plasma - Google Patents

Powered shield source for high density plasma Download PDF

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Publication number
TW410530B
TW410530B TW087107353A TW87107353A TW410530B TW 410530 B TW410530 B TW 410530B TW 087107353 A TW087107353 A TW 087107353A TW 87107353 A TW87107353 A TW 87107353A TW 410530 B TW410530 B TW 410530B
Authority
TW
Taiwan
Prior art keywords
coil
barrier
channel
plasma
patent application
Prior art date
Application number
TW087107353A
Other languages
English (en)
Chinese (zh)
Inventor
Liu-Bo Hong
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW410530B publication Critical patent/TW410530B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
TW087107353A 1997-05-14 1998-05-12 Powered shield source for high density plasma TW410530B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/856,423 US6103070A (en) 1997-05-14 1997-05-14 Powered shield source for high density plasma

Publications (1)

Publication Number Publication Date
TW410530B true TW410530B (en) 2000-11-01

Family

ID=25323592

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087107353A TW410530B (en) 1997-05-14 1998-05-12 Powered shield source for high density plasma

Country Status (4)

Country Link
US (1) US6103070A (ja)
JP (1) JPH11106912A (ja)
KR (1) KR19980086991A (ja)
TW (1) TW410530B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
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RU216762U1 (ru) * 2022-03-22 2023-02-28 Федеральное государственное бюджетное образовательное учреждение высшего образования "Комсомольский-на-Амуре государственный университет" (ФГБОУ ВО "КнАГУ") Держатель поясковый

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GB2588935B (en) 2019-11-15 2022-09-07 Dyson Technology Ltd Method and apparatus for sputter deposition of target material to a substrate
GB2588932B (en) 2019-11-15 2022-08-24 Dyson Technology Ltd Method and apparatus for sputter deposition of target material to a substrate
GB2588946B (en) 2019-11-15 2022-08-17 Dyson Technology Ltd Method of manufacturing crystalline material from different materials
GB2588944B (en) 2019-11-15 2022-08-17 Dyson Technology Ltd Method of forming crystalline layer, method of forming a battery half cell
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Publication number Priority date Publication date Assignee Title
RU216762U1 (ru) * 2022-03-22 2023-02-28 Федеральное государственное бюджетное образовательное учреждение высшего образования "Комсомольский-на-Амуре государственный университет" (ФГБОУ ВО "КнАГУ") Держатель поясковый

Also Published As

Publication number Publication date
KR19980086991A (ko) 1998-12-05
US6103070A (en) 2000-08-15
JPH11106912A (ja) 1999-04-20

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