TW430859B - Electro-optical device - Google Patents

Electro-optical device

Info

Publication number
TW430859B
TW430859B TW087107846A TW87107846A TW430859B TW 430859 B TW430859 B TW 430859B TW 087107846 A TW087107846 A TW 087107846A TW 87107846 A TW87107846 A TW 87107846A TW 430859 B TW430859 B TW 430859B
Authority
TW
Taiwan
Prior art keywords
tfts
driving circuit
display device
semiconductor display
substrate
Prior art date
Application number
TW087107846A
Other languages
Chinese (zh)
Inventor
Yoshiharu Hirakata
Takeshi Nishi
Shunpei Yamazaki
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP14854097A external-priority patent/JP3998755B2/en
Priority claimed from JP15280597A external-priority patent/JPH10325959A/en
Priority claimed from JP16799097A external-priority patent/JPH10339889A/en
Priority claimed from JP9183024A external-priority patent/JPH1115004A/en
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Application granted granted Critical
Publication of TW430859B publication Critical patent/TW430859B/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)

Abstract

The object of the present invention is to provide a semiconductor display device which has uniform cell thickness and shows a good display characteristic. To achieve the object, in an active matrix type semiconductor display device in which pixel TFTs and driving circuit TFTs are integrally formed on the same substrate, the controlling of cell gaps is performed with gap holding materials arranged between a pixel area and driving circuit areas. As the result, uniform cell thickness is obtained over the whole of the semiconductor display device. Moreover, stress is not generated in the driving circuit TFTs at the time of sticking TFTs substrate together with opposite substrate because conventional grain shaped spacers are not used in this device. Thus, damage is prevented from being provided on the driving circuit TFTs.
TW087107846A 1997-05-22 1998-05-20 Electro-optical device TW430859B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP14854097A JP3998755B2 (en) 1997-05-22 1997-05-22 Semiconductor display device
JP15280597A JPH10325959A (en) 1997-05-26 1997-05-26 Display device
JP16799097A JPH10339889A (en) 1997-06-09 1997-06-09 Electro-optic device and its production
JP9183024A JPH1115004A (en) 1997-06-23 1997-06-23 Electrooptical device and production therefor

Publications (1)

Publication Number Publication Date
TW430859B true TW430859B (en) 2001-04-21

Family

ID=27472870

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087107846A TW430859B (en) 1997-05-22 1998-05-20 Electro-optical device

Country Status (2)

Country Link
KR (6) KR100569034B1 (en)
TW (1) TW430859B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109343280A (en) * 2018-11-26 2019-02-15 惠科股份有限公司 Display panel and display device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100911464B1 (en) 2003-03-24 2009-08-11 삼성전자주식회사 LCD and its manufacturing method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62251723A (en) * 1986-04-25 1987-11-02 Seiko Epson Corp Driver - Built-in LCD panel
JPH0682811A (en) * 1992-07-15 1994-03-25 Toshiba Corp Liquid crystal display device
JP2694126B2 (en) * 1995-02-06 1997-12-24 インターナショナル・ビジネス・マシーンズ・コーポレイション Liquid crystal display device and method of manufacturing the same
JPH08248427A (en) * 1995-03-13 1996-09-27 Semiconductor Energy Lab Co Ltd Liquid crystal display device
JP3737176B2 (en) * 1995-12-21 2006-01-18 株式会社半導体エネルギー研究所 Liquid crystal display

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109343280A (en) * 2018-11-26 2019-02-15 惠科股份有限公司 Display panel and display device

Also Published As

Publication number Publication date
KR20060087373A (en) 2006-08-02
KR20060087367A (en) 2006-08-02
KR100686245B1 (en) 2007-02-22
KR100686246B1 (en) 2007-02-22
KR20060086806A (en) 2006-08-01
KR100686569B1 (en) 2007-02-26
KR100686577B1 (en) 2007-02-26
KR19980087279A (en) 1998-12-05
KR20060086801A (en) 2006-08-01
KR100528376B1 (en) 2005-11-16
KR100569034B1 (en) 2006-08-30

Similar Documents

Publication Publication Date Title
EP0855613A3 (en) Liquid crystal display device
TW348228B (en) Liquid crystal display device
TW362274B (en) Semiconductor apparatus and manufacturing method thereof used for the pixel switches or driving circuit of a kind of active matrix type display apparatus
EP0603420A4 (en) Liquid crystal display.
WO1999030369A3 (en) Thin film transistors and electronic devices comprising such
TW328180B (en) Method of fabricating thin film transistor, active array substrate, and liquid crystal display
EP1107220A3 (en) Gradation control for an active matrix EL display
EP0871227A3 (en) Thin film transistor, manufacturing method therefor and liquid crystal display unit using the same
CA2354139A1 (en) Display devices
EP0961525A4 (en) ACTIVE MATRIX DISPLAY
MX9505069A (en) Article comprising an organic thin film transistor.
EP1003065A3 (en) Liquid crystal display device
EP0845812A3 (en) Display apparatus
EP1998374A3 (en) Semiconductor device having oxide semiconductor layer and manufacturing method thereof
EP0837355A3 (en) Substrate for liquid crystal display and method of manufacturing the same
EP0766120A3 (en) Active matrix substrate and display device incorporating the same
TW200627625A (en) Sensor, thin film transistor array panel, and display panel including the sensor
EP0763766A3 (en) Display unit
TW375689B (en) Liquid crystal display device and method for manufacturing the same
EP0354449A3 (en) Semiconductor single crystal substrate
TW200502631A (en) Liquid crystal display and thin film transistor array panel therefor
TW345680B (en) Active matrix display devices methods of manufacturing the active matrix display devices
US5815231A (en) Liquid crystal display and method of manufacturing the same
EP0750350A3 (en) Solid state pixel array with supplementary crossover structure
WO2004023575A8 (en) Electroluminescent display devices

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees